Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN

heterostructure field-effect transistors

Yuanjie Lv, Zhihong Feng, Tingting Han, Shaobo Dun, Guodong Gu, Jiayun Yin, Baicheng Sheng, Bo Liu,
Yulong Fang, Shujun Cai, Zhaojun Lin, Chongbiao Luan, and Qihao Yang
Citation: Applied Physics Letters 103, 113502 (2013); doi: 10.1063/1.4820960
View online: http://dx.doi.org/10.1063/1.4820960
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/103/11?ver=pdfcov
Published by the AIP Publishing
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APPLIED PHYSICS LETTERS 103, 113502 (2013)

Enhanced effect of strain-induced polarization Coulomb field scattering

in AlN/GaN heterostructure field-effect transistors
Yuanjie Lv,1 Zhihong Feng,1,a) Tingting Han,1 Shaobo Dun,1 Guodong Gu,1 Jiayun Yin,1
Baicheng Sheng,1 Bo Liu,1 Yulong Fang,1 Shujun Cai,1 Zhaojun Lin,2 Chongbiao Luan,2
and Qihao Yang2

1
Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051,
China
2
School of Physics, Shandong University, Jinan 250100, China

(Received 19 February 2013; accepted 27 August 2013; published online 10 September 2013)
Using the measured Capacitance-Voltage and Current-Voltage characteristics of the rectangular
AlN/GaN Heterostructure Field-Effect Transistors (HFETs) with different Schottky areas, we
found that after device processing the polarization Coulomb field (PCF) scattering is induced and
has an important influence on the two-dimensional electron gas electron mobility. Moreover, it was
also found that PCF scattering has an enhanced influence on the mobility in AlN/GaN HFETs
compared to that in AlGaN/AlN/GaN HFETs. This is attributed to the large lattice mismatch
between AlN and GaN necessitating a thinner AlN barrier layer, which gives rise to a stronger
C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4820960]
converse piezoelectric effect. V
AlN/GaN heterostructures are of great importance in
vertical device scaling for high frequency operation. AlN
offers the greatest potential as a scalable barrier material due
to its large bandgap and polarization effects.1,2 AlN/GaN
HEMTs with a drain-to-source distance of 70 nm demonstrated a record-high fT/fmax of 342/518 GHz,3 which was
attributed to the extremely thin barrier layer and large polarization effects. The scattering mechanisms effect the electron
mobility of the two-dimensional electron gas (2DEG), which
is crucial to the ultimate performance of an AlxGa1xN/GaN
Heterostructure Field-Effect Transistor (HFET). The scattering mechanisms in AlN/GaN heterostructures have been
investigated by many groups using temperature-dependent
Hall measurements,4,5 and it has been found that the longitudinal optical (LO) phonon scattering dominates the 2DEG
electron mobility near room temperature while the interface
roughness scattering becomes the dominant carrier scattering
mechanism at low temperatures (100 K). However, little
attention has been paid to the scattering mechanisms in the
AlN/GaN HFET devices after device processing. In the
AlGaN/(AlN/)GaN and InAlN/AlN/GaN HFET devices, it
has been shown that processing for both the Ohmic contact
and the Schottky contact induce a barrier layer strain variation, and then a polarization gradient is generated near the
Ohmic and/or Schottky contacts.68 As a result, the polarization Coulomb field (PCF) scattering related to the strain variation in the barrier layer has an important influence on the
2DEG electron mobility after device processing.68 Since the
strained AlN/GaN heterostructure has been a popular material for the main-stream Gallium Nitride based devices for
microwave and digital circuit applications, it is of great importance to understand the role that the PCF scattering plays
in the AlN/GaN HFET devices. In this letter, rectangular
AlN/GaN HFETs with different gate geometrical areas are
fabricated on AlN/GaN heterostructures, and it is found that
a)

Author to whom correspondence should be addressed. Electronic mail:

ga917vv@163.com

0003-6951/2013/103(11)/113502/4/$30.00

the PCF scattering cannot be ignored after device processing.

Moreover, the influence of the PCF scattering on the 2DEG
electron mobility in strained AlN/GaN HFETs is found to be
enhanced compared to that of AlGaN/AlN/GaN HFETs.
The AlN/GaN heterostructure employed in this work is
epitaxially grown by metal organic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. The AlN/
GaN heterostructure consists of a low-temperature nucleation layer, followed by a 2 lm undoped GaN layer, a 3 nm
AlN barrier layer and a 2 nm S. I. GaN cap. Hall measurements indicate a sheet carrier density of around
1.04  1013 cm2 and an electron mobility of 1700 cm2/Vs
at room temperature. For device processing, mesa isolation
was performed using Cl2/BCl3 reactive ion etching, and the
source and drain Ohmic contacts were formed by depositing
Si/Ti/Al/Ni/Au using e-beam evaporation and lift-off. The
source and drain regions were rectangular (100 lm wide and
50 lm long), and the space between the source and drain was
100 lm. These contacts were annealed in a rapid thermal
annealing system, and using transmission line method
(TLM) patterns the specific resistivity of the source and drain
Ohmic contacts was measured to be 5.1  105 Xcm2. To
form the gate, Ni/Au (50 nm/200 nm) Schottky contacts of
varying areas were then deposited in the space between the
source and drain Ohmic contacts by e-beam evaporation.
The Ni/Au rectangular Schottky contacts were symmetrically
placed in the middle between the source and drain, and their
sizes were 20/100 lm (length/width), 40/100 lm, 60/100 lm,
and 80/100 lm. Capacitance-Voltage (C-V) measurements
were performed at room temperature using an Agilent
B1520A at 1 MHz, and the Current-Voltage (I-V) measurements for AlN/GaN HFETs were performed at room temperature using an Agilent B1500A semiconductor parameter
analyzer.
Figure 1(a) shows the C-V curves of the Ni Schottky
contacts with different contact areas for the AlN/GaN
HFETs. The C-V measurements were obtained using the
source contact and the Ni Schottky contact. The 2DEG

103, 113502-1

C 2013 AIP Publishing LLC

V

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Appl. Phys. Lett. 103, 113502 (2013)

FIG. 1. The measured C-V curves (a) and the calculated 2DEG electron density n2D under different gate biases (b) at room temperature for the prepared
AlN/GaN HFETs with different gate lengths.

FIG. 2. The measured I-V curves at room temperature for the prepared samples with different gate lengths.

electron density (n2D) under different gate biases with different Ni Schottky contact areas can be obtained by integrating
the measured C-V curves,6 and the calculated results are
shown in Fig. 1(b). Considering the Schottky contact area
error between the design and the fabrication, there are about
61% error in the calculated 2DEG electron density. It can
be seen that the 2DEG density decreases with increasing Ni
Schottky contact area. This result is the same as we have previously shown on strained AlGaN/GaN heterostructures.9,10
For the explanation for the variation of 2DEG density with
Ni Schottky contact area, readers can refer to Ref. 10.
For the rectangular devices, the electron drift mobility
of the 2DEG under the gate area in the strained AlN/GaN
heterostructures was calculated as follows:8

scattering,11 interface roughness scattering,11 dislocation

scattering,12 PCF scattering,6 background impurity scattering,6 and alloy scattering.13 Since our samples are nominally
undoped, the background impurity scattering can be ignored.
The alloy scattering can also be neglected due to the large
conduction-band offset in AlN/GaN heterostructures.14 For
the dislocation scattering, the electron mobility rises with
increasing electron density.12 Here the samples were fabricated on the same material and therefore the density of the
dislocations should be the same. From Fig. 3(a), the dislocation scattering therefore can also be ignored since the mobility decreases with increasing electron density at the same
gate bias. By temperature-dependent Hall measurements,
Cao and Jena show that the LO phonon scattering dominates
the 2DEG electron mobility at room temperature while the
interface roughness scattering becomes the dominant carrier
scattering mechanism at low temperatures (<100 K).5 For
both the LO phonon scattering and the interface roughness
scattering, the mobility decreases with increasing electron
density.8,11 Thus, the LO phonon scattering and the interface
roughness scattering does not explain the variation of the
mobility with gate bias. From Fig. 3(a), the variation in the
electron mobility according to the gate bias can be explained
as follows.
Before metal deposition, the distribution of the polarization charges in the AlN barrier layer is uniform, and hence
cannot scatter the electrons in the GaN channel. The density
of the polarization charges in the AlN barrier layer is
referred to as qMat. After Ohmic annealing, the diffusion of
the contact metal atoms results in the reduction of the polarization charge density underneath the Ohmic contact.1517 In
addition, when the Schottky contact metal is deposited on
the strained AlN/GaN heterostructure, there is an interaction

ln

IDS LG
;
qn2D WVDS  IDS RD RS 

(1)

RD

LGD
;
qn2D0 ln0 W

(2)

RS

LGS
;
qn2D0 ln0 W

(3)

where LG is the gate length, LGD is the space between the

gate and drain, LGS is the space between the gate and source,
n2D0 is the 2DEG electron density under zero gate bias, ln0
is the electron drift mobility under zero gate bias, and W is
the gate width. Other parameters and the calculation used are
the same as in Zhaos calculation.6 The specific resistivity of
the Ohmic contact was measured to be 5.1  105 Xcm2,
and the contact resistance is calculated to be just 1 X.
Compared to the large channel resistance, the contact resistance can be ignored during the calculation. The I-V characteristics for the rectangular AlN/GaN HFETs were measured
and are shown in Fig. 2. For the calculation of the electron
mobility using Eq. (1), the values of the measured current
IDS with a source-drain voltage of 100 mV at different gate
biases are used. With the related data substituted into Eq.
(1), the electron mobility of the 2DEG under the gate area
for the rectangular AlN/GaN HFET devices are calculated
and shown in Fig. 3(a). The electron mobility of the four
samples increases with gate bias for the range of 1.2 V to
0.4 V, while remaining almost unchanged for the range of
0.4 V to 0 V.
The well-known Scattering mechanisms that affect the
2DEG electron mobility in IIIV heterojunctions mainly
include LO phonon scattering,11 acoustic phonon

FIG. 3. The relationship between the electron mobility of the 2DEG and the
applied gate bias at room temperature for the prepared AlN/GaN HFET
devices (a) and the samples of AlGaN/AlN/GaN HFET devices (Ref. 8)
(b) which are the same size as the AlN/GaN HFET devices.

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113502-3

Lv et al.

between the atoms of the Schottky contact metals and the

surface atoms of the AlN barrier layer.9,15 During the interaction, the strain energy of the AlN barrier layer will be
changed resulting in a reduction of the polarization charge
density underneath the Schottky contact. Moreover, with the
converse piezoelectric effect, the gate biases will induce
strain variation of the thin AlN barrier layer. As a result, the
polarization charge density underneath the gate metals will
be changed by the gate bias electric field. As shown in
Fig. 4, qG is the polarization charge density underneath the
Schottky contact metals, and qS/D is the density of the polarization charges underneath the Ohmic contacts. The nonuniform polarization among qMat, qG, and qS/D induces an
elastic scattering potential on the 2DEG electron mobility,
and the elastic scattering potential corresponds to the polarization charge density variation which sets up a polarization
Coulomb field that scatters 2DEG electrons. For PCF scattering, the electron mobility rises with increasing electron density.6 As a result, for the range of 0  0.4 V, the LO
phonon scattering and interface roughness scattering are
comparable to the PCF scattering which results in an
unchanged mobility for the 2DEG electrons at different gate
biases. Due to the converse piezoelectric effect, the gate
biases will exacerbate the strain variation of the AlN barrier
layer under the Schottky contacts,18 and increase the difference between qMat and qG. Since the elastic scattering potential of the polarization Coulomb field is proportional to the
nonuniform polarization between qMat and qG, qS/D, increasing the reverse gate bias results in a stronger polarization
Coulomb field scattering in the 2DEG electrons. Moreover,
as the 2DEG density decreases, the electrostatic shielding for
the polarization charges is weakened, and PCF scattering
increases. As a result, PCF scattering becomes dominant
with further increasing the reverse gate bias, resulting in a
monotonic decrease for the mobility of the 2DEG electrons
at the range of 0.4 V  1.2 V.
Miller et al. has calculated the polarization sheet charge
density for the Al0.28Ga0.72N/GaN as 1.25  1013 cm2.19
Considering that the polarization sheet charge density
increases with Al composition,20 the polarization sheet
charge density of the AlN/GaN heterostructure should be
larger than 1.25  1013 cm2. Based on the measured C-V
curves and the forward I-V characteristics of the Schottky
contacts for the prepared AlN/GaN HFETs, the polarization
charge density under the Schottky contacts (qG)

FIG. 4. Schematic diagram for the distribution of the polarization charge

density in the AlN/GaN HFET.

Appl. Phys. Lett. 103, 113502 (2013)

corresponding to different gate biases can be calculated by

self-consistently solving Schrodingers and Poissons
equations,15,21 and the results are listed in Table I. The
Schottky barrier height (/b) used for the above calculation
can be extracted from the forward current-voltage curve
by self-consistently solving Schrodingers and Poissons
equations.22,23 During the calculation of the Schottky barrier height for the AlN/GaN HFETs, the value of the
conduction-band offset for the AlN/GaN heterostructure is
taken to be 1.47 eV.24 The calculated Schottky barrier
heights for both AlGaN/GaN HFET and AlN/GaN HFETs
are shown in Table I. The details of the above calculation
can be referenced in Refs. 2123.
As seen from Table I, the value of qG is much smaller
than the one of qMat, which demonstrates the nonuniform
polarization in the AlN barrier layer. Moreover, the difference between qG and qMat enlarges with increasing the
reverse gate bias, which indicates the enhancement of PCF
scattering. Since the elastic scattering potential of the polarization Coulomb field is proportional to the difference
between qMat and qG, qS/D, the electrons under the gate area
are scattered by the polarization charges which correspond to
(qMat  qG) and (qMat  qS/D). With the shorter gate length,
the space between the gate contact and the source or drain
contacts is larger, and the cancelling out of each others
Coulomb force between the polarization charges (qMat  qG)
and (qMat  qS/D) is weaker. Moreover, since (qMatqG) is
more closed to the channel electrons compared with
(qMatqS/D), the PCF scattering originating from (qMatqG) is
stronger than that from (qMatqS/D). So the electrons under
the gate area are scattered more strongly by the polarization
charge (qMat  qG) with a shorter gate length. As a result, the
PCF scattering is stronger for the AlN/GaN HFETs with a
shorter gate length, resulting in an electron mobility drop as
the Ni Schottky contact area decreases. In addition, since the
2DEG density increases slightly with decreasing gate length
at a given gate bias, the LO phonon scattering and interface
roughness scattering also play a part in decreasing the electron mobility.
The mobility curves for Fig. 3(b) are referenced from
our former results on the AlGaN/AlN/GaN HFET devices,
which are the same sizes as the AlN/GaN HFET devices in
this letter.8 As seen from Fig. 4, the relationship between the
electron mobility and the applied gate bias for the AlN/GaN
HFET devices is quite different from the one in the AlGaN/
AlN/GaN HFET devices. To explain the above difference,
the polarization charge density under the Schottky contacts
of the AlGaN/AlN/GaN HFET with 20 lm gate length is
also calculated and listed in Table I.
Due to the large lattice mismatch between AlN and
GaN, the critical thickness of the AlN barrier layer in the
AlN/GaN heterostructures is much smaller than that of the
AlGaN barrier layer in the AlGaN/AlN/GaN heterostructures. Therefore, the AlN barrier layer is much thinner compared to the AlGaN barrier layer. Since there are only
several atom layers in the extremely thin AlN barrier layer
(3 nm) for the AlN/GaN HFETs, there will be a much
stronger electrical field when applying a gate bias in the thin
AlN barrier layer than that in the thick AlGaN barrier layer
for AlGaN/AlN/GaN HFETs. With the stronger converse

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Appl. Phys. Lett. 103, 113502 (2013)

TABLE I. Calculated polarization charge density under the Schottky contacts corresponding to different gate biases for the AlN/GaN and AlGaN/AlN/GaN
HFET devices.
The AlN/GaN HFETs
LG (lm)
/b (eV)
qMat (1012 cm2)

qG (1012 cm2)

VG 0(V)
VG 0.6(V)
VG 1(V)
VG 1.2(V)
VG 2(V)

80
1.67

60
1.68

40
1.70

20
1.72

20
1.42
12.5
10.2

12.5
8.32
6.77

8.46
6.91

8.62
7.10

8.86
7.32

5.49

5.67

5.85

6.09

9.78

piezoelectric effect, the variation of the piezoelectric polarization charges in the thin AlN barrier layer is much larger
compared to the thick AlGaN barrier layer. Thus, as shown
in Table I, the disparity between qG and qMat for the AlN/
GaN HFET is much larger than that of the AlGaN/AlN/GaN
HFET. As a result, the PCF scattering has a greater effect on
the electron mobility of the 2DEG in the AlN/GaN HFET
devices than that in the AlGaN/AlN/GaN HFET devices.
In summary, rectangular HFET devices with different
Ni Schottky areas were fabricated on AlN/GaN heterostructures. With the measured C-V curves and the I-V characteristics for the rectangular AlN/GaN HFETs, the relationship
between the electron mobility of the 2DEG underneath the
Schottky contacts and the applied gate bias for the prepared
AlN/GaN HFET devices was obtained. Based on the calculated polarization charge along the drain-to-source channel,
it was found that the PCF scattering related to the strain variation in the AlN barrier layer becomes an important carrier
scattering mechanism in the AlN/GaN HFET devices after
device processing. In addition, the big lattice mismatch
between AlN and GaN necessitates a thinner AlN barrier
layer which induces a strong converse piezoelectric effect.
As a result, the PCF scattering has more influence on the
electron mobility in the strained AlN/GaN heterostructure
compared to the strained AlGaN/AlN/GaN heterostructure.
This work was supported by the National Natural
Science Foundation of China (Grant Nos. 60890192,
60876009, and 11174182). The authors would like to thank
Dr. T. D. Corrigan for useful discussions.
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