Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________

Chapter 4
Exercise Solutions
EX4.1
k'
g m = 2 n
2

W
I DQ
L

W
0.1 W
1.8 = 2
= 20.25
(0.8)
L
2 L
______________________________________________________________________________________

EX4.2
k ' W 0.1
2
(a) K n = n =
(50) = 2.5 mA/V
2
L
2

2
I DQ = K n VGSQ VTN

(
0.25 = 2.5(V

GSQ

)
0.4)

VGSQ = 0.716 V

V DSQ = V DD I DQ R D = 3.3 (0.25 )(10 ) = 0.8 V

V DS (sat ) = VGS VTN = 0.717 0.4 = 0.316 V V DS > V DS (sat )

(b)

g m = 2 K n I DQ = 2 (2.5)(0.25) = 1.58 mA/V

ro =

(c) A

= 160 k

(0.025)(0.25)
= g m (ro RD ) = (1.58)(160 10) = 14.9
I DQ

______________________________________________________________________________________
EX4.3

R2
320
VGS =
VDD =
( 5 ) = 1.905 V
520 + 320
R1 + R2
I DQ = 0.20 (1.905 0.8 ) = 0.244 mA
2

g m = 2 K n I DQ = 2
(a)

(b)
(c)

( 0.2 )( 0.244 ) = 0.442 mA/V

ro =

Av = g m RD = ( 0.422 )(10 ) = 4.22

Ri = R1 R2 = 520 320 = 198 k

(d) RO = RD = 10 K
______________________________________________________________________________________
EX4.4
At transition point, I D = 1 mA

I D = K n (VGSt VTN ) = K n (VDS ( sat ) )

2

1 = 0.2 (VDS ( sat ) ) VDS ( sat ) = 2.236 V

2

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
5 2.236
Want V DSQ =
+ 2.236 = 3.62 V
2
5 3.62
RD =
= 2.76 k
0.5

0.5 = 0.2 VGSQ 0.8 VGSQ = 2.38 V

2

R2
1
V DD =
(R1 R2 )V DD
VGSQ =
+
R
R
R
2
1
1
1
So 2.38 = ( 200 )( 5 ) R1 = 420 K and R2 = 382 K
R1

Av = g m RD

( 0.2 )( 0.5) = 0.6325 mA/V

Av = ( 0.6325 )( 2.76 )

g m = 2 K n I DQ = 2

= 1.75
______________________________________________________________________________________
EX4.5

35
(a) VG =
(10) 5 = 3.25 V
35 + 165
VG = VGS + I D RS 5
So
2
5 3.25 = VGS + K n R S (VGS VTN )

2
1.75 = VGS + (1)(0.5) VGS
1.6VGS + 0.64

or
2
0.5VGS
+ 0.2VGS 1.43 = 0 VGS = 1.503 V

Then

I DQ = (1)(1.503 0.8) = 0.4942 mA

2

V DSQ = 10 (0.4942 )(7 + 0.5) = 6.29 V

(b)

g m = 2 K n I DQ = 2 (1)(0.4942) = 1.406 mA/V

g m RD
(1.406)(7 )
=
= 5.78
1 + g m RS 1 + (1.406 )(0.5)
______________________________________________________________________________________
A =

EX4.6
k p'
(a) K p =
2

W 0.04
2
=
(40 ) = 0.80 mA/V
L 2

3 = K p RS VSGQ + VTP

3 = (0.8)(1.2) V

2
SGQ

+ VSGQ

0.8VSGQ + 0.16 + VSGQ

or
2
0.96V SGQ
+ 0.232V SGQ 2.846 = 0 V SGQ = 1.605 V

I DQ = (0.8)(1.605 0.4) = 1.162 mA

2

V SDQ = 6 (1.162 )(1.2 + 2 ) = 2.283 V

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(b)

g m = 2 K p I DQ = 2 (0.8)(1.162) = 1.928 mA/V

ro =

= 43.03 k

(0.02)(1.162)
= g m (ro RD ) = (1.928)(43.03 2) = 3.68
I DQ

______________________________________________________________________________________
EX4.7
VDSQ = VDD I DQ RS

5 = 10 (1.5 ) RS RS = 3.33 k

I DQ = K n (VGS VTN ) 1.5 = (1)(VGS 0.8 )

2

R2
VGS = 2.025 V = VG VS = VG 5 VG = 7.025 V =
R1 + R2

So

R2
10
VDD =
400

R2 = 281 k, R1 = 119 k

Neglecting R Si , A =

ro = I DQ

g m (R S ro )

1 + g m (R S ro )

= [(0.015)(1.5)] = 44.4 k
1

R S ro = 3.33 44.4 = 3.1 k

g m = 2 K n I DQ = 2 (1)(1.5) = 2.45 mA/V
A =

(2.45)(3.1) A

1 + (2.45)(3.1)

= 0.884

______________________________________________________________________________________
EX4.8
(a) VSG = V DD I D RS = 5 (1.5)(2 ) = 2 V
k 'p W
2
I D = (V SG + VTP )
2 L

W
0.04 W
2
1.5 =
= 117
(2 1.2)
L
2 L

(b)

k p'
Kp =
2

W 0.04
2
=
(117 ) = 2.344 mA/V
L 2

g m = 2 K p I D = 2 (2.344)(1.5) = 3.75 mA/V

A =

g m RS
(3.75)(2) = 0.882
=
1 + g m RS 1 + (3.75)(2)
g m (RS R L )

(c)

A =

Then

(0.794)[1 + (3.75)(RS

So

1 + g m (RS R L )

= (0.9 )(0.882) = 0.794

RL ) = (3.75)(RS RL ) RS RL = 2 RL = 1.028

R L = 2.12 k
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX4.9
R2
9.3

VG =
VDD =
(5)
70.7 + 9.3
R1 + R2
= 0.581 V
I DQ = K p (VSG VTP

= K P (VS VG VTP

5 VS
RS

Then ( 0.4 )( 5 )(VS 0.581 0.8 ) = 5 VS

2

2 (VS 1.381) = 5 VS
2

2 (VS2 2.762VS + 1.907 ) = 5 VS

2VS2 4.52VS 1.19 = 0
VS =

4.52

(4.52 )2 + 4(2)(1.19 )
2(2 )

V S = 2.50 V I DQ =

5 2.5
= 0.5 mA
5

g m = 2 K p I DQ = 2 (0.4)(0.5) = 0.894 mA/V

A =
=

R1 R 2
g m RS

1 + g m R S R1 R 2 + R Si

(0.894)(5) 70.7 9.3 A

1 + (0.894 )(5) 70.7 9.3 + 0.5

= 0.770

Neglecting RSi , Av = 0.817

1
1
Ro = R S
=5
= 5 1.12 R o = 0.915 k
gm
0.894
______________________________________________________________________________________
EX4.10

VO = g mV sg (R D R L ) and V sg = V i
A = g m (R D R L )

I DQ =

5 V SG
= K p (V SG VTP
RS

5 V SG = (1)(4)(V SG 0.8)

4V

5.4V SG 2.44 = 0

2
5 V SG = 4 V SG
1.6V SG + 0.64
2
SG

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
V SG =

5. 4

(5.4)2 + (4)(4)(2.44)
2(4 )

V SG = 1.71 V
I DQ =

5 1.71
= 0.822 mA
4

g m = 2 K p I DQ = 2 (1)(0.822) = 1.81 mA/V

A = (1.81)(2 4) = (1.81)(1.33) A = 2.41

1
1
=4
= 4 0.552 Rin = 0.485 k
gm
1.81

Rin = R S

______________________________________________________________________________________
EX4.11

(W L )D
(W L )L

A = 8 =

(a)

(W L )D

1. 2

(b) VGSDt =

(V DD VTNL ) + VTND 1 +

1+

W
= 76.8
L D

K nD
K nL

K nD
K nL

(3.3 0.4) + (0.4)(1 + 8)

=
1+ 8

or VGSDt = 0.7222 V
So
0.7222 0.4
VGSDQ =
+ 0.4 = 0.561 V
2
______________________________________________________________________________________
EX4.12

A = g mD (roD roL )
roD = roL =

1
1
=
= 500 k
I DQ (0.02 )(0.1)

g mD = 2 K nD I DQ = 2 (0.25)(0.1) = 0.3162 mA/V

Then
A = (0.3162) 500 500 = 79.1

______________________________________________________________________________________
EX4.13
A = g m ron rop

ron = rop =

(0.015)(0.1)

= 666.7 k

250 = g m (666.7 666.7 )

g m = 0.75 mA/V = 2 K n I DQ = 2 K n (0.1)
k n W 0.080 W
W
=
= 35.2
2 L 2 L
L 1
______________________________________________________________________________________

K n = 1.406 mA/V 2 =

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX4.14
(a)
1
1
ro 2 ro1
g m1
g m1

RO =

1 1
= = 0.5 mA/V
R0 2

So g m1 =

g m1 = 2 K n I D

( 0.2 ) I D

0.5 = 2

(b)

I D = 0.3125 mA

g m1 (ro1 ro 2 )

A =

1 + g m1 (ro1 ro 2 )

1
= 320 k
(0.01)(0.3125)
(0.5)(320 320)

ro1 = ro 2 =
A =

1 + (0.5)(320 320 )

A = 0.988
______________________________________________________________________________________

EX4.15
(a)
1
ro1 2 K n I D + 1 I D
Av =
=
1
1
2 I D + 1 I D
+
ro 2 ro1
g m1 +

120 =

2 0.2 I D + 0.01I D
0.01I D + 0.01I D

2.4 I D 0.01I D = 2 0.2 I D

2.39 I D = 2 0.2 I D = 0.140 mA
g m1 = 2

( 0.2 )( 0.14 ) g m1 = 0.335 mA/V

(b)

Ro = ro1 ro 2
ro1 = ro 2 =

1
= 714 k
(0.01)(0.14 )

Ro = 714 714 = 357 k

______________________________________________________________________________________
EX4.16
Ro = R S 2

1
g m2

g m 2 = 0.632 mA/V, R S 2 = 8 k
1
= 8 1.58 R o = 1.32 k
0.632
______________________________________________________________________________________
Ro = 8

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX4.17

54.6

54.6
(a) VG1 =
(5) =
(5) = 0.91 V
54.6 + 150 + 95.4
300
54.6 + 150
VG 2 =
(5) = 3.41 V
300

VG1 = VGS1 + K n1 R S (VGS1 VTN ) 5

2

5.91 = VGS1 + (3)(10) VGS2 1 1.6VGS1 + 0.64

or
2
30VGS
1 47VGS 1 + 13.29 = 0 VGS 1 = 1.196 V
Then
2
I DQ = (3)(1.196 0.8) = 0.471 mA

V D1 = VG 2 VGS 2 = 3.41 1.196 = 2.214 V

VS1 = VG1 VGS1 = 0.91 1.196 = 0.286 V
Then
V DSQ1 = 2.214 ( 0.286 ) = 2.5 V
V D 2 = 5 (0.471)(2.5) = 3.8225 V
V DSQ 2 = 3.8225 2.214 = 1.61 V

(b)

g m1 = 2 K n1 I DQ = 2 (3)(0.471) = 2.377 mA/V

A = g m1 R D = (2.377 )(2.5) = 5.94

______________________________________________________________________________________

EX4.18
V S = I DQ R S = (1.2 )(2.7 ) = 3.24 V
V D = V S + V DSQ = 3.24 + 12 = 15.24 V

RD =

20 15.24
R D = 3.97 k
1.2

V
I D = I DSS 1 GS
VP

V
V
1.2 = 41 GS GS = 0.4523
V
VP
P

VGS = (0.4523)( 3) = 1.357 V

VG = V S + VGS = 3.24 1.357 = 1.883 V
R2
R
(20 ) = 2 (20 ) = 1.88 R 2 = 47 k , R1 = 453 k
VG =
500
R1 + R 2
1
1
ro =
=
= 167 k
I DQ (0.005)(1.2)
gm =

2 I DSS VGS
1
( V P ) V P

2(4 ) 1.357
=
1
= 1.46 mA/V
3
(3)

A = g m ro R D R L = (1.46 ) 167 3.97 4 A = 2.87

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
EX4.19
a.
2

V
V
V
I DQ = I DSS 1 GS 2 = 8 1 GS GS = 0.5
V
V
VP

P
P
VGS = ( 0.5 )( 3.5 ) VGS = 1.75
Also I DQ =

VGS ( 10 )
RS

2=

1.75 + 10
RS = 5.88 k
RS

b.

2 I DSS VGS 2(8) 1.75

1
=
1
= 2.29 mA/V
3.5
V P 3.5
V P
1
= 50 k
ro =
(0.01)(2)
Vi
Vi = V gs + g m R S V gs V gs =
1 + g m RS

gm =

A =

(2.29)(5.88 50)
g m (R S ro )
Vo
=
=
A = 0.9234
Vi 1 + g m (R S ro ) 1 + (2.29 )(5.88 50 )

c.
A =

g m R S R L ro

) = (0.80)(0.9234) = 0.7387
(2.29)(R R r )
(

1 + g m R S R L ro

0.7387 =

1 + (2.29)(R S R L ro )

R S R L ro = 1.235 k

R S ro = 5.261 k

(5.261)R L

= 1.235 R L = 1.61 k
5.261 + R L
______________________________________________________________________________________

Then

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________

Test Your Understanding Solutions

TYU4.1

(a)

k'
g m = 2 n
2

W
I DQ
L

0.1 W
W
= 4
= 26.0
(1.2 )
L
L
2

1
1
=
= 55.6 k
(b) ro =
I DQ (0.015)(1.2)

(2.5)2

______________________________________________________________________________________
TYU4.2
(a) I DQ = K n VGSQ VTN

(
0.15 = 0.5(V

)
0.4)

2
2

GSQ

VGSQ = 0.948 V

V DSQ = 3.3 (0.15 )(8) = 2.1 V

(b)

g m = 2 K n I DQ = 2 (0.5)(0.15) = 0.548 mA/V

ro =

= 333 k

(0.02)(0.15)
= g m (ro RD ) = (0.548)(333 8) = 4.28
I DQ

______________________________________________________________________________________
TYU4.3
i D = I DQ + id = I DQ + g m gs

i D = 0.15 + (0.548)(0.025)sin t

or

i D = 0.15 + 0.0137 sin t (mA)

Also
DS = V DSQ + d = 2.1 (0.0137 )(8)sin t
or
DS = 2.1 (0.11)sin t (V)
______________________________________________________________________________________

TYU4.4
(a) V SDQ = V DD I DQ R D

3 = 5 I DQ (5) I DQ = 0.4 mA

I DQ = K p VSGQ + VTP

0.4 = 0.4 VSGQ 0.4 VSGQ = 1.4 V

(b)

g m = 2 K p I DQ = 2 (0.4)(0.4) = 0.8 mA/V

A = g m R D = (0.8)(5) = 4
______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU4.5

=
=
(a)

2 2 f + vSB
0.40
2 2 ( 0.35 ) + 1

0.40
2 2 ( 0.35 ) + 3

g m = 2 K n I DQ = 2

(b)

For (a),

= 0.153

= 0.104

( 0.5)( 0.75) = 1.22 mA / V

g mb = g m = (1.22 )( 0.153) g mb = 0.187 mA / V

g = (1.22 )( 0.104 ) g mb = 0.127 mA / V

For (b), mb
______________________________________________________________________________________

TYU4.6

a.

With RG VGS = VDS transistor biased in sat. region

2
2
I D = K n (VGS VTN ) = K n (VDS VTN )

VDS = VDD I D RD = VDD K n RD (VDS VTN )

VDS = 15 ( 0.15 )(10 )(VDS 1.8 )

2
= 15 1.5 (VDS
3.6VDS + 3.24 )

2
4.4VDS 10.14 = 0
1.5VDS

VDS =

4.4

( 4.4 )

+ ( 4 )(1.5 )(10.14 )

2 (1.5 )

VDSQ = 4.45 V

I DQ = ( 0.15 )( 4.45 1.8 ) I DQ = 1.05 mA

2

b.

Neglecting effect of RG:

A = g m (R D R L )

g m = 2 K n (VGS VTN ) = 2(0.15)(4.45 1.8) g m = 0.795 mA/V

A = (0.795)(10 5) A = 2.65

RG establishes VGS = VDS essentially no effect on small-signal voltage gain.

c.
______________________________________________________________________________________

TYU4.7
a.
5 = I DQ RS + VSG and I DQ = K p (VSG + VTP ) 2
0.8 = 0.5(VSG + 0.8) 2 VSG = 0.465 V

5 = ( 0.8 ) RS + 0.465 RS = 5.67 k

VSDQ = 10 I DQ ( RS + RD )
3 = 10 ( 0.8 )( 5.67 + RD )
RD =

10 ( 0.8 )( 5.67 ) 3
0.8

RD = 3.08 k

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
b.

Vo = g mV sg (R D ro ) = g mVi (R D ro )
Vo
= g m (R D ro )
Vi
g m = 2 K p (V SG + VTP ) = 2(0.5)(0.465 + 0.8) = 1.265 mA/V
A =

ro =

= 62.5 k

(0.02)(0.8)
= (1.265)(3.08 62.5) A
I O

= 3.71

______________________________________________________________________________________
TYU4.8
(a)
V0 = g mVgs r0

Vi = Vgs + V0 Vgs = Vi V0
So V0 = g m r0 (Vi V0 )
Av =

( 4 )( 50 )
V0
g m r0
=
=
Av = 0.995
Vi 1 + g m r0 1 + ( 4 )( 50 )

I x + g mVgs =
I x = g mVx +

(b)

Vx
and Vgs = Vx
r0

Vx
1
1
R0 = r0
= 50 R0 0.25 k
r0
gm
4

With R S = 4 k A =

g m (ro R S )

1 + g m (ro R S )

r0 || Rs = 50 || 4 = 3.7 k Av =

( 4 )( 3.7 )
Av = 0.937
1 + ( 4 )( 3.7 )

______________________________________________________________________________________

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
TYU4.9
(a)
g m = 2 K n I DQ 2 = 2 K n ( 0.8 ) K n = 1.25 mA / V 2

n Cox W

Kn =

2
W
So
= 62.5
L

W
1.25 = ( 0.020 )
L
L

I DQ = K n (VGS VTN ) 0.8 = 1.25 (VGS 2 ) VGS = 2.8 V

2

b.

ro = I DQ
A =

= [(0.01)(0.8)] = 125 k
1

g m (ro R L )

1 + g m (ro R L )

ro R L = 125 4 = 3.88 k

(2)(3.88) A

1 + (2)(3.88)

A =

= 0.886

1
1
ro = 125 R o 0.5 k
gm
2
______________________________________________________________________________________
Ro =

TYU4.10
Rin =

1
= 0.35 k g m = 2.86 mA/V
gm

Vo
= R D R L = 2.4 = R D 4 R D = 6 k
Ii

g m = 2 K n I DQ
2.86 = 2 K n (0.5) K n = 4.09 mA/V 2

I DQ = K n (VGS VTN )

0.5 = 4.09(VGS 1) VGS = 1.35 V V S = 1.35 V

V D = 5 (0.5)(6 ) = 2 V
V DS = V D V S = 2 ( 1.35) = 3.35 V
We have VDS = 3.35 > VGS VTN = 1.35 1 = 0.35 V Biased in the saturation region
2

______________________________________________________________________________________
TYU4.11
K n1 =
Kn2

n Cox W

L
n Cox W
=

2 L

Av =

2
= ( 0.020 )( 80 ) = 1.6 mA / V
1

2
= ( 0.020 )(1) = 0.020 mA / V
2

K n1
1.6
=
Av = 8.94
Kn2
0.020

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
The transition point is determined from vGSt VTND = VDD VTNL
vGSt 0.8 = ( 5 0.8 ) ( 8.94 )( vGSt 0.8 )
vGSt =

K n1
( vGSt VTND )
Kn2

( 5 0.8) + (8.94 )( 0.8) + 0.8

1 + 8.94

vGSt = 1.22 V
1.22 0.8
+ 0.8 VGS = 1.01 V
2
For Q-point in middle of saturation region
______________________________________________________________________________________
VGS =

TYU4.12

(a)

R2
VG1 =
R1 + R2

135
(10 ) 5 =
(10 ) 5 = 2.394 V
135 + 383

VG1 = VGS1 + K n1 RS1 (VGS1 VTN ) 5

2

or

2
5 2.394 = VGS1 + (1.5)(3.9) VGS
1 1.2VGS 1 + 0.36

so
2
5.85VGS
1 6.02VGS 1 0.5 = 0 VGS 1 = 1.106 V
Then
2
I DQ1 = (1.5)(1.106 0.6 ) = 0.3845 mA

V DSQ1 = 10 (0.3845 )(3.9 + 16.1) = 2.31 V

VG 2 = 5 (0.3845)(16.1) = 1.190 V

VG 2 = VGS 2 + K n 2 RS 2 (VGS 2 VTN ) 5

2

or

2
5 1.19 = VGS 2 + (2)(8) VGS
2 1.2VGS 2 + 0.36

so
2
16VGS
2 18.2VGS 2 + 1.95 = 0 VGS 2 = 1.018 V

Then

I DQ 2 = (2 )(1.018 0.6) = 0.349 mA

2

V DSQ 2 = 10 (0.349 )(8) = 7.208 V

(b)

g m1 = 2 K n1 I DQ1 = 2 (1.5)(0.3845) = 1.519 mA/V

g m 2 = 2 K n 2 I DQ 2 = 2 (2)(0.349) = 1.671 mA/V

From Example 4.16

g m1 g m 2 R D1 (RS 2 R L )
Ri
A =

1 + g m 2 (RS 2 RL )
Ri + RSi
=

(1.519 )(1.671)(16.1)(8 4)

or
A = 19.2

1 + (1.671)(8 4)

99.8
99.8 + 4

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
(c)

1
1
RS 2 =
8 = 0.5984 8 Ro = 557
g m2
1.671
______________________________________________________________________________________
Ro =

TYU4.13
From Example 6.18
g m = 3.0 mA/V, ro = 41.7 k

R1 R2 = 420 180 = 126 k

V gs =
A =

126
Vi =
Vi = 0.863 Vi
R1 R 2 + Ri
126 + 20
R1 R 2

g mV gs ro R D R L
Vi

= (3.0 )(0.863) 41.7 2.7 4 = (2.589 )(1.55) A = 4.01

_____________________________________________________________________________
TYU4.14
a.
R2
VG1 =
(VDD )
R1 + R2
430
VG1 =
( 20 ) = 17.2 V
430 + 70
2

V
V V
I DQ1 = I DSS 1 GS = 6 1 G1 S 1
V
2

20 VS1
17.2 VS1
V

= 6 1
+
= 6 S 1 7.6 and I DQ1 =

2
2
4

20 VS 1
V

= 6 S 1 7.6
4
2

2
V

20 VS1 = 24 S 1 7.6VS1 + 57.76

4

Then

= 6VS21 182.4VS 1 + 1386.24

6VS21 181.4VS 1 + 1366.24 = 0
VS1 =

181.4

(181.4 ) 4 ( 6 )(1366.24 )
2 (6)
2

VS1 = 14.2 V VGS 1 = 17.2 14.2 = 3 V > VP

So VS1 = 16.0 VGS1 = 17.2 16 = 1.2 < VP Q
20 16
on I DQ1 =
I DQ1 = 1 mA
4
VSDQ1 = 20 I DQ1 ( RS 1 + RD1 )

= 20 (1)( 8 ) VSDQ1 = 12 V

VD1 = I DQ1 RD1 = (1)( 4 ) = 4 V = VG 2

Microelectronics: Circuit Analysis and Design, 4th edition

Chapter 4
By D. A. Neamen
Exercise Solutions
______________________________________________________________________________________
V VS 2
V
= I DSS 1 GS = 6 1 G 2

VP
( 2 )

I DQ 2

V
V
4 V
V
= 6 1 + S 2 = 6 3 S 2 and I DQ 2 = S 2 = S 2
R
2
2
2
4

S2
V
V
Then S 2 = 6 3 S 2
4
2

V2
VS 2 = 24 9 3VS 2 + S 2
4

2
6VS 2 73VS 2 + 216 = 0
73

VS 2 =

( 73)

4 ( 6 )( 216 )

2 (6)

VS 2 = 7.09 V or = 5.08 V

For VS 2 = 5.08 V VGS 2 = 4 5.08 = 1.08 transistor biased ON

5.08
I DQ 2 = 1.27 mA
4
= 20 VS 2 = 20 5.08 VDS 2 = 14.9 V

I DQ 2 =
VDS 2

b.

V g 2 = g m1V sg1 R D1 = g m1Vi R D1

Vo = g m 2V gs 2 (R S 2 R L )

V g 2 = V gs 2 + V o V gs 2 =

A =

Vg 2

1+ g m 2 (R S 2 R L )

Vo
g m1 R D1
=
Vi 1+ g m 2 (R S 2 R L )

2 I DSS VGS
1

VP
VP
2 ( 6 ) 1.2
=
1
= 2.4 mA/V
2
2
2 ( 6 ) 1.08
gm2 =
1
= 2.76 mA/V
2
2
(2.4 )(4 )
Then A =
= 2.05
1 + (2.76 )(4 2 )
g m1 =

_____________________________________________________________________________