TIC226 SERIES

SILICON TRIACS

8 A RMS

TO-220 PACKAGE
(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

MT1

Max IGT of 50 mA (Quadrants 1 - 3)

MT2

This series is currently available,

but not recommended for new
designs.

Pin 2 is in electrical contact with the mounting base.

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING

TIC226D

TIC226M

Repetitive peak off-state voltage (see Note 1)

TIC226S

Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2)

TIC226N

Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3)

Peak gate current

Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s)
Average gate power dissipation at (or below) 85C case temperature (see Note 4)
Operating case temperature range

Storage temperature range

SYMBOL

400
600

VDRM

800
8

ITSM

UNIT
V

700

IT(RMS)

70

PGM

2.2

TC

-40 to +110

TL

230

IGM

PG(AV)
Tstg

Lead temperature 1.6 mm from case for 10 seconds

VALUE

MDC2ACA

0.9

-40 to +125

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at
the rate of 320 mA/C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25C case temperature (unless otherwise noted )

PARAMETER
IDRM

IGT

VGT
VT

Repetitive peak

off-state current
Gate trigger
current

Gate trigger
voltage

On-state voltage

TEST CONDITIONS
VD = rated VDRM

IG = 0

Vsupply = +12 V

RL = 10

Vsupply = -12 V

RL = 10

Vsupply = +12 V

Vsupply = -12 V

RL = 10

tp(g) > 20 s

Vsupply = -12 V

RL = 10

Vsupply = -12 V

IT = 12 A

tp(g) > 20 s

tp(g) > 20 s

RL = 10

tp(g) > 20 s
tp(g) > 20 s

RL = 10

tp(g) > 20 s

RL = 10

tp(g) > 20 s

IG = 50 mA

TYP

TC = 110C

RL = 10

Vsupply = +12 V
Vsupply = +12 V

MIN

tp(g) > 20 s
(see Note 5)

-12
-10
25

0.7

-0.8
-0.8
0.9

1.5

MAX

UNIT

mA

50

-50
-50

mA

-2
-2
2

2.1

V
V

All voltages are with respect to Main Terminal 1.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIC226 SERIES
SILICON TRIACS
electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER

TEST CONDITIONS

IH

Holding current

IL

Latching current

Init ITM = 100 mA

10

30

Vsupply = -12 V

IG = 0

Init ITM = -100 mA

-6

-30

Vsupply = +12 V

off-state voltage

dv/dt(c)

MAX

IG = 0

Critical rise of commutation voltage

MIN

VDRM = Rated VDRM

IG = 0

VDRM = Rated VDRM

ITRM = 12 A

UNIT
mA

50

(see Note 6)

Vsupply = -12 V

Critical rate of rise of

dv/dt

TYP

Vsupply = +12 V

mA

-50
TC = 110C

100

TC = 85C

V/s

V/s

(see figure 7)

All voltages are with respect to Main Terminal 1.

NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.

thermal characteristics
PARAMETER
RJC

Junction to case thermal resistance

RJA

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

1.8

C/W

62.5

C/W

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT

vs
CASE TEMPERATURE

CASE TEMPERATURE
TC01AA

Vsupply IGTM

VAA = 12 V

+
+
-

RL = 10
tp(g) = 20 s

+
+

100

10

1
-60

-40

-20

20

40

60

80

100

120

TC01AB

10

VAA = 12 V

Vsupply IGTM
VGT - Gate Trigger Voltage - V

IGT - Gate Trigger Current - mA

1000

GATE TRIGGER VOLTAGE

vs

+
+
-

+
-

RL = 10
tp(g) = 20 s

01
-60

-40

-20

20

60

80

TC - Case Temperature - C

TC - Case Temperature - C

Figure 1.

Figure 2.


2

40

100

120





APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIC226 SERIES
SILICON TRIACS

TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs

LATCHING CURRENT
vs

CASE TEMPERATURE

1000

VAA = 12 V

Vsupply
+
-

Vsupply IGTM

IG = 0
Initiating ITM = 100 mA
IL - Latching Current - mA

IH - Holding Current - mA

CASE TEMPERATURE

TC01AD

1000

100

10

+
+
-

+
+

-20

TC01AE

VAA = 12 V

100

10

01
-60

-40

-20

20

40

60

80

100

1
-60

120

-40

TC - Case Temperature - C

20

40

60

80

100

120

TC - Case Temperature - C

Figure 3.

Figure 4.

THERMAL INFORMATION
MAX AVERAGE POWER DISSIPATED
vs

MAX RMS ON-STATE CURRENT

vs
CASE TEMPERATURE

RMS ON-STATE CURRENT

TI01AB

P(av) - Maximum Average Power Dissipated - W

IT(RMS) - Maximum On-State Current - A

10
9
8
7
6
5
4
3
2
1
0

32

TI01AC

TJ = 110 C

28

Conduction Angle = 360

Above 8 A rms
See ITSM Figure

24
20
16
12
8
4
0

25

50

75

100

125

10

12

TC - Case Temperature - C

IT(RMS) - RMS On-State Current - A

Figure 5.

Figure 6.



14

16





APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIC226 SERIES
SILICON TRIACS

PARAMETER MEASUREMENT INFORMATION

VAC
VAC

L1

ITRM
IMT2
IMT2

C1
50 Hz

VMT2

VDRM

DUT
RG
See
Note A

R1

VMT2

10%
dv/dt
63%

IG

IG
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 s.
PMC2AA

Figure 7.


4





APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.