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2N5320 2N5321

2N5322 2N5323

NPN
PNP

COMPLEMENTARY SILICON
SWITCHING TRANSISTORS

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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5320, 2N5322
series types are complementary silicon power
transistors manufactured by the epitaxial planar process,
designed for amplifier and switching applications.
MARKING: FULL PART NUMBER

TO-39 CASE
MAXIMUM RATINGS: (TC=25C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance

SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JA
JC

2N5320
2N5322
100
100
75
6.0

ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)


2N5320
2N5322
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
0.5
ICBO
VCB=60V
IEBO
VEB=5.0V
0.1
IEBO
VEB=4.0V
BVCEV
IC=100A, VBE=1.5V
100
BVCEO
IC=10mA
75
BVEBO
IE=100A
6.0
VCE(SAT)
IC=500mA, IB=50mA (2N5320)
0.5
VCE(SAT)
IC=500mA, IB=50mA (2N5321)
0.7
VCE(SAT)
IC=500mA, IB=50mA (2N5322)
VCE(SAT)
IC=500mA, IB=50mA (2N5323)
VBE(ON)
VCE=4.0V, IC=500mA
1.1
hFE
VCE=4.0V, IC=500mA
30
150
hFE
VCE=2.0V, IC=1.0A
10
fT
VCE=4.0V, IC=50mA, f=10MHz
50
-

2N5321
2N5323
75
75
50
5.0

2.0
1.0
10
-65 to +200
175
17.5

2N5321
2N5323
MIN
MAX
5.0
0.5
75
50
5.0
0.8
1.2
1.4
40
250
50
-

UNITS
V
V
V
V
A
A
W
C
C/W
C/W

UNITS
A
A
A
A
V
V
V
V
V
V
V
V

MHz

R4 (11-June 2012)

2N5320 2N5321
2N5322 2N5323

NPN
PNP

COMPLEMENTARY SILICON
SWITCHING TRANSISTORS

ELECTRICAL
SYMBOL
ton
ton
toff
toff

CHARACTERISTICS TEST CONDITIONS


VCC=30V, IC=500mA,
VCC=30V, IC=500mA,
VCC=30V, IC=500mA,
VCC=30V, IC=500mA,

Continued: (TC=25C unless otherwise noted)


IB1=50mA (2N5320, 2N5321)
IB1=50mA (2N5322, 2N5323)
IB1=IB2=50mA (2N5320, 2N5321)
IB1=IB2=50mA (2N5322, 2N5323)

MAX
80
100
800
1.0

UNITS
ns
ns
ns
s

TO-39 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER

R4 (11-June 2012)
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