,

':

INDIAN INSTITUTE OF TECHNOLOGY, KHARAGPUR

Semiconductor Devices
Code--EC211 07
Total: 100
Time duration: 3 hrs
l(a). At 400K temperature and 1 atm. pressure the degree of dissociation of PCl; is 0.4. If it is doubled,
what will be the pressure?

Find the angle between [ 10 1] and [ 11 0] directions in a cubic lattice.

The structure of GaAs is zincblend lattice. The lattice constant is 5.65
electrons in GaAs.

A. Calculate the density of valence

(3+2+3)

l(b). Calculate the density of state per unit volume over an energy range between 1e V and 2 eV.
14

A proton attempts to penetrate a rectangular potential barrier of height 10 MeV and thickness 10" m. The
particle has a total energy of 3 MeV. Calculate the probability that the particle will penetrate the potential
barrier.( mass of proton is 1.67 x 1027 kg)
A particle exists inside a one dimensional potential box of length L. Calculate the probability of finding
(3+2+3)
the particle in a region between L/4 and 3L/4 when the particle is in the first excited state.

2(a). Determine the values of no and Po for Si at T = 300K if the Fermi energy is 0.22ev above the valence
band energy. From the obtained value of no and p0, find the position ofEF relative to~?

At 300K, the electron concentration (no) in Si is 5 x 104 cm3.determine p0 , whether the material is nor p
type. Determine the Fermi level position with respect to intrinsic Fermi level.
(4+4)

2(b). An n-type Si sample has a resistivity of 6 0.-cm at T = 300K. What is the donor impurity
concentration and what is the expected resistivity at T = 2001( and 400K.

The electron concentration in Si decreases linearly from 10 16 cm3 to 10 15 cm3over a distance ofO.OOl m.
The cross sectional area of Sample is 0.05 em. The Dn is 35 cm2/s. Calculate the electron diffusion
current.
(6+2)
3(a). Calculate the quasi-Fermi energy levels of an n-type semiconductor at 300K with carrier
concentrations of no = 10 16 cm3, ni = 10 10 cm3 and p0 = 106 cm3 In non-equilibrium, assume that the
excess carrier concentrations are on= 8p = 10 13 cm3 .

Consider a semiconductor in which n0 = 10 15 cm3 and ni = 10 10 cm3 Assume that the excess-carrier
lifetime is 10-6 s. determine the electron-hole recombination rate if the excess hole concentration is 8p = 5
x 10 13cm3
(4+4)
3(b). A sample ofGe at T = 300K has a uniform donor concentration of2 x 10 14 cm3 The excess carrier
lifetime is found to be "rp0 =24 J..LS. Determine the ambipolar diffusion coefficient and the ambipolar
mobility. Assume intrinsic carrier concentration ofGe is 2 x 10 13 cm3
What is surface state? Define surface recombination velocity.

(6+2)

17

4(a). An abrupt Si p-n junction has Na = I 0 cm-3 on the p side and Nd = I 0 16 cm-3 on the n side. At
300K, Calculate the Fermi levels, draw an equilibrium band diagram and find built in potential from the
diagram. Name the different types of capacitances present in a p-n junction and their origin. Calculate the
junction capacitance per unit area for the above data with a reverse bias of I OV.
8
4(b). The cross sectional area of Si16 pn junction is I o-3 cm 2 The temperature of diode is 300K and the
3
doping concentrations are Nd =. I0 cm- and Na = 8 x I0 15 cm-3 Assume minority carrier lifetimes for
7
electrons and holes are respectively I 0-6 and I o- s. Calculate the total number of excess electrons in the p
region and the total number of excess holes in then region for (i) Va = 0.3V (ii) Va = 0.5V (iii) Va = 0.4V
Calculate the applied reverse bias voltage at which the ideal reverse current in a pn junction diode at
(5+3)
3001( reaches 90% of its saturation value.

19

S(a). A Sin +-p-n transistor has doping of I 0 , 3x I 0 16, and 5x I 0 15 em - 3 in the emitter, base, and collector,
respectively. Find the upper limit of the base-collector voltage at which the neutral base width becomes
zero (punch-through). Assume the base width (between metallurgical junctions) is 0.5 !lm.
For a uniformly doped n++_ p+- n bipolar transistor in thermal equilibrium, (a) sketch the energy-band
diagram, (b) sketch the electric field through the device. What profile of the base doping results in a
uniform electric field in the base?
(4+4)

S(b). A symmetrical p+-n-p+ bipolar transistor has the following properties:

Emitter
A= 104 cm 2
Wb = 1Jlm

Na=IO 17 em -3
'tn = O.IJ!S

Jlp= 210
!ln= 740

Base
Nd = 10 15 em -3
l"p = 10 !!S

Jlp= 1350 cm 2N-s

Jln= 450

(I) Calculate the saturation ~urrent I._.= L:s-

(II) With VEB = 0.3 V and Vcs =- 45 V, calculate the base current Is, assuming perfect emitter injection
efficiency,
(III) Calculate the base transportation factor B, emitter illiection efficiency y and amplification factor p,
assuming that the emitter region is long compared with Ln.
(8)
6(a).

Consider an n-channel GaAs JFET at T=300K with the following parameters:

Na = 5 x I018 cm-3
Nd = 2 x 1016 cm-3
a= 0.35 Jlm
L =10 Jlm
W = 30 Jlm
Jln = 8000 cm 2N-s
Ignoring velocity saturation effects, calculate (i) Conductance parameter (Gol) (ii) Yos(sat) for VGs = 0
and VGs = Vp/2; and (iii) 101 (sat) for VGs == 0 and VGs == Vp/2 (iv) sketch the 1-V characteristics using the
results from parts (ii) and (iii).
(8)

6(b).

Determine the small signal voltage gain Av= vofvi of a JFET amplifier.
Consider the circuit shown in figure below with transistor parameters loss= 12 rnA, Vp=- 4 V, and
'A= 0.008 y-l.
VOD=20V

'>- RD= 2. 7 Kilo-ohm

'

'::>

Rl =420 KiJo-ohm

Ccl

VI

~R2=180

RS=2.7

Ics
(8)

Q7. 1. At high injection, gain is proportional to collector current.

(a) True
(b) False
2. In heterojunction bipolar transistor, base doping is higher than the emitter doping.
(a) True
(b) False
3. The transconductance of a JFET increases as the width of the width decreases.
(a) True
(b) False
4. The low field electron mobility in GaAs is much lower than silicon
(a) True
(b) False
5. Common emitter current gain can be increased by base grading
(a) True
(b) False
6. Fermi pinning occurs in lnAs
(a) True

(b) False

7. Metal semiconductor gate junction in MESFET is ohmic

(a) True
(b) False
8. Thicker base BJT has higher cutoff frequency
(a) True
(b) False
(0.5x8=4)

Appendix
n;forSi= 1.5x 10cm3
I

f.
(oV)

I'~(<.!
.

I~

1350

3900
!lOO

480
1900

1200

420
3W

0.6

LO

20

02,0.63
0 1.5, 0.76
0.98

2.26

(d/l)

I 43

ld/Z. \1.1
(d/2}

3 ..4
0.7
1.35

5000
4000

1000

0041

(d/21

100

0.36

0.077

22600

200

0023

1700

0.0!4
028

(d/l)

w,

200
300
8500
380

0.18

fQ-)

400

36

180

10

(d/Zj.

2.7
2.25

600

ldlw.ll

28
lOO

2.42

(dJ'\1'11

1.73

[d/Z)

(i/h1
(i/)-IJ
(~

0.12
I 12,02'<
0067
019

t50

15

0.14
0 lS
021

1.58

800
1050

100

0.37
0.27
0.29

0 lJ
0.10

575
1500
6000

200
!500
4000

SJO
250

All ~a\ 300 K.

A\rogcdto's number
~mann'a con&kml

Eledrornc charge (magnitude}

Efedronic test man
Permlftivify of free spoce
Pkmd's constant
Room temperature value of Jc T

Spe$d of light

0.60

0.06,0.23
OOS9. oas
0025,0.41
0015,0.40

0.60
0.05
0.80
0.45
0.37
0.29

0.22
0.17

020

1.3a x
8.61 X
1.00 x
m(l ... 9. J I X
Eo- 8.85 X

w-- 23 J/K

)0- 3 tN/K

w"c

kg
F/etn
= 8.85
F/m
h= 6.63 x w-~ h
= 4. L<t x. JO-Is eV-s
kT = 0.0259 eV
w-Jl

}0-l.ol
X J0- 12

l nm ... I 0 A .. w~)' em
2.54 em .. I in.
1 eV .. L6 x 10- 19 J

j.ttn

Preflxe$:
milli-,
micro.,

m-

fiOnO.,

11

pfco-,

p-

... to 3

.. w-6
... Jo-9
.. 10_,,

liJo.,

k.

"'J03

mega-,
giga-,

N.-

""JQ6
"'109

G.

con:espooch to a photon energy of 1.24 eV.

Density

5.43

II

5.65

l6

2 33
5 32

3.08
5.46

10.2

3 21
2.40
360

6.14

426

5.45

'II . 1

4.13

5.65
4.5

13.2

3.31

5.66

6.09

5 87
6.06
648
5.409
5.671
6.10!
4 137

4.30

_~_. ___ fg/cml_rc)

9.6
10.9
11

12.2

6!

15 7
\14

5 Gl

14.6
17.7

8.9
9.2

10.4
8.9

4 79
5.67
s 78
4.09
5.65

5.51
4.82
5.81

f4J5/
936
2830 i

::I
2000

1467

1238

,,,0

7f2
1070

,,. I
1650'
1100' i

1475

6,461

5.936
6.147

17.0
23.6

7.6

lll9

8.73

1081

6.452

30

8.!6

lloporix"~

6.20

9..43 I

525

10.2
102

6.02 x )()2l molecWes/mole

c .. 2.998x 101oc:m/5

1 A(angslrom) =10- 8 em
1 j.Utl fmicroo~ .. Io- em

A wavelength 1\ of I

O.l..t,0.79
0074,0.50

-------

NA ..
k=

q ..

a (Aj

016.049
0.04, 0. 28

1.6.11, OOB2

eo

2.45
2 16
1.6

Mellir.g J

m".fm0

imo.muJ

098,019

1/2)
li/Zl

ld/Zf

l Cdse

l Pb.Se
J Pb'IO

0.67
2.86

ld/.21

/E:

I~

(i/Or

(d/1;,

jCdS

1.11

-(W"'l
(i/lj
{ill)

1 GaAs

I~

li/DI

11t
v,,
m '.Jrr.,.
(<:m'l'!'-si
(cm1 1\'~l
{m4t!"-J
~~---.

125&
109B

9251