2SK3568

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3568
Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.4 (typ.)

High forward transfer admittance: |Yfs| = 8.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 500 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

500

Drain-gate voltage (RGS = 20 k)

VDGR

500

Gate-source voltage

VGSS

30

(Note 1)

ID

12

Pulse (t = 1 ms)
(Note 1)

IDP

48

Drain power dissipation (Tc = 25C)

PD

40

Single pulse avalanche energy

(Note 2)

EAS

364

mJ

Avalanche current

IAR

12

Repetitive avalanche energy (Note 3)

EAR

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

-55~150

DC
Drain current

A
1: Gate
2: Drain
3: Source

JEDEC

JEITA

SC-67

TOSHIBA

2-10U1B

Weight : 1.7 g (typ.)

Thermal Characteristics
Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

3.125

C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

C/W

Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25C(initial), L = 4.3 mH, IAR = 12 A, RG = 25

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.
3

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2SK3568
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Typ.

Max

Unit

10

VGS = 25 V, VDS = 0 V

V (BR) GSS

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 500 V, VGS = 0 V

100

Drain cut-off current

Drain-source breakdown voltage

Min

IGSS

Gate leakage current

Gate-source breakdown voltage

Test Condition

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 6 A

0.4

0.52

Forward transfer admittance

Yfs

VDS = 10 V, ID = 6 A

3.5

8.5

1500

15

180

VOUT

22

RL =
33

50

36

170

42

23

19

Gate threshold voltage

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time

VDS = 25 V, VGS = 0 V, f = 1 MHz

Turn-on time

ton

50

Switching time
Fall time

ID = 6 A

10 V
VGS
0V

tr

tf

Turn-off time

VDD
200 V
Duty <
= 1%, tw = 10 s

toff

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VDD
400 V, VGS = 10 V, ID = 12 A

pF

ns

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

(Note 1)

IDR

12

(Note 1)

IDRP

48

IDR = 12 A, VGS = 0 V

1.7

Continuous drain reverse current

Pulse drain reverse current
Forward voltage (diode)

VDSF

Reverse recovery time

trr

IDR = 12 A, VGS = 0 V,

1200

ns

Qrr

dIDR/dt = 100 A/s

16

Reverse recovery charge

Marking

K3568

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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2SK3568

ID VDS

ID VDS
12

5.2
10,15

10
COMMON SOURCE
Tc = 25C
PULSE TEST

4.75
6

4.5

4.25

COMMON SOURCE

10,15

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

24

Tc = 25C
PULSE TEST

20
5.5
16

5.2
5

12

4.75

4.5
4

VGS = 4 V

VGS = 4V
0
0

DRAIN-SOURCE VOLTAGE

10

0
0

12

VDS

(V)

10

ID VGS

VDS (V)
DRAIN-SOURCE VOLTAGE

DRAIN CURRENT ID (A)

VDS = 20 V
PULSE TEST

16

12

8
Tc = 55C

4
25
0
0

10

GATE-SOURCE VOLTAGE

VGS

12

COMMON SOURCE
Tc = 25

10

PULSE TEST

8
ID = 12 A

4
6
3
2
0
0

20

16

VGS

24

(V)

RDS (ON) ID
10

Tc = 55C
10

25
100

1
COMMON SOURCE
VDS = 20 V
PULSE TEST
10

DRAIN CURRENT ID

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m)

FORWARD TRANSFER ADMITTANCE

Yfs (S)

12

GATE-SOURCE VOLTAGE

Yfs ID

(V)

12

(V)

100

0.1
0.1

VDS

60

VDS VGS

COMMON SOURCE

100

50

40

DRAIN-SOURCE VOLTAGE

24

20

30

20

100

(A)

COMMON SOURCE
Tc = 25C
PULSE TEST

0.1
0.1

VGS = 10 V15V

10

DRAIN CURRENT ID

100

(A)

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RDS (ON) Tc

IDR VDS
100

COMMON SOURCE

DRAIN REVERSE CURRENT IDR

(A)

PULSE TEST
2.0

ID = 12A
6

VGS = 10 V
2

0
80

40

40

80

CASE TEMPERATURE

120

Tc

COMMON SOURCE
Tc = 25C
PULSE TEST
10

1
10
5

1
0.1
0

160

(C)

0.2

CAPACITANCE VDS

1.2

1.0

VDS

(V)

Vth Tc

GATE THRESHOLD VOLTAGE

Vth (V)

(pF)
CAPACITANCE C

0.8

5
Ciss

1000
Coss
100

Crss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25C
1
0.1

10

DRAIN-SOURCE VOLTAGE

2
COMMON SOURCE
1

(V)

VDS (V)
DRAIN-SOURCE VOLTAGE

30

20

10

CASE TEMPERATURE

40

40

80

120

Tc

160

(C)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

40

80

ID = 1 mA

CASE TEMPERATURE

50

40

VDS = 10 V
PULSE TEST

0
80

100

VDS

PD Tc

DRAIN POWER DISSIPATION

PD (W)

0.6

0.4

DRAIN-SOURCE VOLTAGE

10000

0
0

VGS = 0, 1 V

120

Tc

160

(C)

500

20

400

16

VDS
VDD = 100 V

300

400

200

200
COMMON SOURCE
VGS

100

ID = 12 A

Tc = 25C
PULSE TEST
0
0

10

20

30

TOTAL GATE CHARGE

12

40

50

Qg

0
60

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE ON RESISTANCE
RDS (ON) (m )

2.5

(nC)

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NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty=0.5
0.2
0.1

0.1

0.05
PDM

0.02

SINGLE PULSE

0.01 0.01

T
Duty = t/T
Rth (ch-c) = 3.125C/W

0.001
10

100

10

PULSE WIDTH

100

tw

10

(s)

SAFE OPERATING AREA

EAS Tch

100

500
ID max (PULSED) *

AVALANCHE ENERGY
EAS (mJ)

100 s *

DRAIN CURRENT ID (A)

ID max (CONTINUOUS) *
10

1 ms *
1 ms *

DC OPERATION
Tc = 25C

LINEARLY

0.01

WITH

DERATED

INCREASE

100

50

75

10

100

125

150

IN

VDSS max

TEMPERATURE.

BE

200

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

Tc=25
MUST

300

0
25

SINGLE NONREPETITIVE PULSE

CURVES

400

100

DRAIN-SOURCE VOLTAGE

15 V

1000

VDS

(V)

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 83mH

VDS

WAVE FORM

AS =

1
B VDSS

L I2
B

V
DD
VDSS

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RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

2004-07-01