Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV79E series

FEATURES

SYMBOL

Low forward volt drop

Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance

QUICK REFERENCE DATA

VR = 150 V/ 200 V

k
1

VF 0.9 V

a
2

IF(AV) = 14 A
IRRM 0.2 A
trr 30 ns

GENERAL DESCRIPTION

PINNING

Ultra-fast, epitaxial rectifier diodes

intended for use as output rectifiers
in high frequency switched mode
power supplies.

PIN

The BYV79E series is supplied in

the conventional leaded SOD59
(TO220AC) package.

SOD59 (TO220AC)
DESCRIPTION

cathode

anode

tab

tab

cathode
1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

CONDITIONS

VRRM
VRWM
VR

Peak repetitive reverse voltage

Crest working reverse voltage
Continuous reverse voltage

MIN.
BYV79E

IF(AV)
IFRM
IFSM

IRRM
IRSM
Tstg
Tj

Tmb 145C

Average forward current

square wave
= 0.5; Tmb 120 C
Repetitive peak forward current t = 25 s; = 0.5;
Tmb 120 C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 s; = 0.001
Non-repetitive peak reverse
tp = 100 s
current
Storage temperature
Operating junction temperature

MAX.
-150
150
150
150

UNIT
-200
200
200
200

V
V
V

14

28

150
160

A
A

0.2
0.2

A
A

-40
-

150
150

C
C

1. Neglecting switching and reverse current losses.

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

VC

Electrostatic discharge
capacitor voltage

Human body model;

C = 250 pF; R = 1.5 k

July 1998

MIN.

MAX.

UNIT

kV

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV79E series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance junction to

mounting base
Thermal resistance junction to
ambient

Rth j-a

CONDITIONS

in free air

MIN.

TYP.

MAX.

UNIT

K/W

60

K/W

MIN.

TYP.

MAX.

UNIT

0.83
0.95
1.2
0.5
5
6
20

0.90
1.05
1.4
1.3
50
15
30

V
V
V
mA
A
nC
ns

13
1

22
-

ns
V

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

VF

Forward voltage

IR

Reverse current

Qs
trr1

Reverse recovery charge

Reverse recovery time

trr2
Vfr

Reverse recovery time

Forward recovery voltage

IF = 14 A; Tj = 150C
IF = 14 A
IF = 50 A
VR = VRWM; Tj = 100 C
VR = VRWM
IF = 2 A; VR 30 V; -dIF/dt = 20 A/s
IF = 1 A; VR 30 V;
-dIF/dt = 100 A/s
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/s

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

dI
F

BYV79E series

0.5A

dt

IF

0A

rr
time

10%

I rec = 0.25A
IR

100%

trr2

rrm
I = 1A
R

Fig.1. Definition of trr1, Qs and Irrm

Fig.4. Definition of trr2

20

BYV79

PF / W

Tmb(max) / C
110
D = 1.0

Vo = 0.744 V
Rs = 0.0112 Ohms

0.5
120

15
0.2

time

0.1

10

130

VF
V

tp

D=

tp
T

140

fr
t

VF

time

Fig.2. Definition of Vfr

10
15
IF(AV) / A

20

150
25

Fig.5. Maximum forward dissipation PF = f(IF(AV));

square current waveform where IF(AV) =IF(RMS) x D.

15

PF / W

Tmb(max) / C
120
a = 1.57

BYV79

Vo = 0.744 V
Rs = 0.0112 Ohms

1.9
2.2

D.U.T.

2.8

10

Voltage Pulse Source

Current
shunt

140

to scope
0

IF(AV) / A

10

150
15

Fig.6. Maximum forward dissipation PF = f(IF(AV));

sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).

Fig.3. Circuit schematic for trr2

July 1998

130

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV79E series

trr / ns

1000 Qs / nC

1000

IF=10A

IF=10A
5A
2A

100

100
IF=1A

10

10

10
dIF/dt (A/us)

1.0

100

1.0

Fig.7. Maximum trr at Tj = 25 C.

100

Fig.10. Maximum Qs at Tj = 25 C.

Irrm / A

10

10
-dIF/dt (A/us)

10

IF=10A

Transient thermal impedance, Zth j-mb (K/W)

1
IF=2A

0.1

0.1
PD

0.01

0.001
1us

0.01
10
-dIF/dt (A/us)

100

Fig.8. Maximum Irrm at Tj = 25 C.

tp

D=

10us

tp
T
t

100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E

10s

Fig.11. Transient thermal impedance; Zth j-mb = f(tp).

IF / A

60

Tj = 150 C

50

Tj = 25 C
40
30
20
typ
10
max
0
0

0.5

1.0
VF / V

1.5

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter Tj

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV79E series

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned
3,0

13,5
min
1,3
max 1
(2x)

2
0,9 max (2x)

5,08

0,6
2,4

Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base.

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

July 1998

Rev 1.200

Philips Semiconductors

Product specification

Rectifier diodes
ultrafast, rugged

BYV79E series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

July 1998

Rev 1.200

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