ESE319 Introduction to Microelectronics

Class AB Output Stage

Class AB amplifier Operation

Multisim Simulation - VTC
Class AB amplifier biasing
Widlar current source
Multisim Simulation - Biasing

2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Class AB Operation

vI
VB

IQ

IQ (set by VB)

2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Basic Class AB Amplifier Circuit

1. Bias QN and QP into slight conduction (fwd. act.)
when vI = 0: iN = iP.
i L =i N i P

2 Ideally QN and QP are:

a. Matched (unlikely with discrete
transistors and challenging in IC).
b. Operate at same ambient
temperature.

3.For vi > 0: iN > iP i.e. QN most cond. (like Class B).

4.For vi < 0: iP > iN i.e. QP most cond. (like Class B).
NOTE. This is base-voltage biasing with all its stability problems!
2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Class AB VTC Plot

Ideally the two DC base
voltage sources are
matched and V BB
= 0.7 VV.
/ 20.7
BB/2

2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Amplitude: 20 Vp
Frequency: 1 kHz

Class AB VTC Simulation

VCC

VBB/2
RSig

VBB/2
RL

-VCC
2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Class AB VTC Simulation - cont.

Amplitude: 2 Vp
Frequency: 1 kHz

V BB
=0.1V
2
V BB
=0.5V
2

V BB
=0.7V
2

2008 Kenneth R. Laker, updated 26Nov12 KRL

ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

for DC vi = 0
V BB
v BEN =
v O
2
V BB
v EBP =v O
2

vi +
i N =i P i L

Bias (QN & QP matched):

I N =I P =I Q =I S e

V BB
2V T

2008 Kenneth R. Laker, updated 26Nov12 KRL

Output voltage for vi 0:

V BB
for v i 0 v o =v i
v BEN v ov i
2
V BB
for v i 0 v o =v i
v EBP v ov i
2
Base-to base voltage is constant!
v BEN v EBP=V BB for all v
i

Let us next show that

i N i P =I 2Q

for all vi
7

ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

V BB
V BB
for vi 0 v o =v i
v BEN v BEN =v i v o
2
2
V BB
V BB
for v i 0 v o =v i
v EBP v EBP =v ov i
2
2
v BEN v EBP=V BB

Using the currents

i N =I S e

v BEN
vT

for all vi

ADD

Note for Class B VBB = 0

v EBP
VT

iP
iN
i P =I S e v EBP =V T ln
v BEN =V T ln
IS
IS
V
IQ
2V
I N =I P =I Q =I S e V BB =2 V T ln
IS
iN
iP
IQ
V T ln
V T ln
=2 V T ln
for all vi
IS
IS
IS

2008 Kenneth R. Laker, updated 26Nov12 KRL

BB

ESE319 Introduction to Microelectronics

Class AB Circuit Operation - cont.

from the previous slide
iN
iP
IQ
V T ln
V T ln
=2 V T ln
IS
IS
IS

i N =i P i L

V T ln

iN iP
I 2S

IQ
=2 V T ln
IS

ln i N i P ln I 2S =2 ln I Q 2 ln I S
2
ln i N i P =ln I 2Q or i N i P =I Q

Constant base voltage condition:

2008 Kenneth R. Laker, updated 26Nov12 KRL

v BEN v EBP=V BB => i N i P =I 2Q

9

ESE319 Introduction to Microelectronics

Class AB Circuit Operation VTC cont.

The constant base voltage condition i P i N =I Q2 where IQ is typically small.
For example let IQ = 1 mA and iN = 10 mA.

I 2Q 1106
1
i P= =
=0.1
mA=
iN
3
i N 1010
100
The Class AB circuit, over most of its input signal range, operates as if either
the QN or QP transistor is conducting and the QP or QN transistor is cut off.
For small values of vI both QN and QP conduct, and as vI is increased or
decreased, the conduction of QN or QP dominates, respectively.
Using this approximation we see that a class AB amplifier acts much like a
class B amplifier; but without the dead zone.
2008 Kenneth R. Laker, updated 26Nov12 KRL

10

ESE319 Introduction to Microelectronics

Class AB Small-Signal Output Resistance

ac ground

i N =I S e

v BEN
vT

Instantaneous resistance for the

QN transistor - assume 1:

CN

v BEN
VT

di N
ISe
iN
1
=
= =
dv BEN
VT
V T r eN

BN

vI = 0

EN

vO <=>

EP
BP
CP

ac ground

v I =0
R out =r eNr eP
2008 Kenneth R. Laker, updated 26Nov12 KRL

in
ip

Root

For the QP transistor:

di P
iP
1
= =
dv EBP V T r eP
Hence:

VT
VT
r eN =
and r eP =
iN
iP
vI > 0 V: iN > iP => R out r eN
vI < 0 V: iP > iN => R out r eP
11

ESE319 Introduction to Microelectronics

Small-Signal Output Resistance - cont.

The two emitter resistors are in parallel:
V T2
iN iP
VT
VT
R out =r eN r eP =
=
=
VT VT
i N i P
1 1

iN iP

iN
iP
i N iP

and

vO
i L = =i N i P
RL

At iN = iP (the no-signal condition i.e. vO = 0 => iL = 0): i N =i P =I Q

VT
R out =
2IQ

So, for small signals, a small load current IQ flows => no dead-zone!
2008 Kenneth R. Laker, updated 26Nov12 KRL

12

ESE319 Introduction to Microelectronics

Class AB Power Conversion Efficiency &

Power Dissipation Similar to Class B
Let VCC = 12 V and R L =100

P Disp

P Disp max=

2 V CC
2

RL

=0.29 W

2 V o peak
1 V o peak
P DispB =
V CC
RL
2 RL

PDisp(max) = 0.29 W
0.20 W

0.7 V
Accurate for small Vo-peak.
2008 Kenneth R. Laker, updated 26Nov12 KRL

V o peak
= 7.63 V

P Disp 0 when Vo-peak = 0

13

ESE319 Introduction to Microelectronics

Class AB Amplifier Biasing

current mirror
D1

IQ

IQ
+

QN

VBB

D2

IQ

QP
IQ

A straightforward biasing approach:

D1 and D2 are diode-connected
transistors identical to QN and QP,
respectively.
They form mirrors with the quiescent
currents IQ set by matched R's:
2 V CC 1.4 V CC 0.7
I Q=
=
2R
R
or:
V CC 0.7
R=
IQ

Recall: With mirrors, the ambient temperature for all transistors needs to
be matched!
2008 Kenneth R. Laker, updated 26Nov12 KRL

14

ESE319 Introduction to Microelectronics

Widlar Current Source

IN = bias current for Class AB amplifier NPN
R

IREF
VCC

IQ

IQ = IN
Q2 = QN

I REF
V BE1=V T ln
IS

IQ
V BE2 =V T ln
IS
emitter
IO Re
degeneration
I REF I S
I REF
V BE1 V BE2=V T ln
=V T ln

IS IQ
IQ
V CC V BE1 12V 0.7V
I REF =
=
=1 mA
V BE1=V BE2I Q R e
R
11.3 k
I REF
Note: Pages 543-546 in Sedra & Smith Text.
I Q R e =V T ln
IQ
+
+
- VBE1 VBE2-

Note Re > 0 iff IQ < IREF

2008 Kenneth R. Laker, updated 26Nov12 KRL

15

ESE319 Introduction to Microelectronics

Widlar Current Source - cont.

If IQ specified and IREF chosen by designer:

R
IREF

VT
I REF
Re=
ln
IQ
IQ

IQ

VCC
IQ

Re

Example Let IQ = 10 A & choose IREF = 10 mA,

determine R and Re:
V CC V BE1 12 V 0.7 V
R=
=
=1.13 k
I REF
10 mA

I REF
I Q R e =V T ln
IQ
If Re specified and IREF chosen
by the designer:
VT
I Q=
ln I REF ln I Q

Re
Solve for IQ graphically.
2008 Kenneth R. Laker, updated 26Nov12 KRL

VT
I REF 0.025 V
10 m A
Re=
ln
=
ln

IQ
IQ
10 A
10 A

.=2500 ln 1000=17.27 k
R=1.13 k

R e =17.27 k
16

ESE319 Introduction to Microelectronics

Widlar Current Mirror Small-Signal Analysis

..
Rout
v x v
i x =g m v i ro =g m v
ro
v =rR e i x
v x r R e i x
i x =g m r R e i x
ro
ro
vx
.g m r R e i x
ro
2008 Kenneth R. Laker, updated 26Nov12 KRL

r 1/ g m
Rout is greatly enhanced by
adding emitter degeneration.

vx
R out = r o [ g m R er ]
ix
g m R er 1
17

ESE319 Introduction to Microelectronics

Class AB Current Biasing Simulation

Bias currents set at IREF and IQ by R and emitter resistor(s) Re.
NPN Widlar current mirror

I REF 4 mA
I Q= I QN = I QP2 mA

R=2.8 k

IREF

IQN
Q2

Q1

iN

iIiLLL

Q3

Amplitude: 0 Vp
Frequency: 1 kHz

Q4
R=2.8 k

IREF

i L =i N i P

Re=10 R =100
L

Re=10
IQP

R=

V CC V BE1 V CC V EB3
=
2.8 k
I REF
I REF
VT
I REF
Re =
ln
10
I QN
I QN

PNP Widlar current mirror

2008 Kenneth R. Laker, updated 26Nov12 KRL

18

ESE319 Introduction to Microelectronics

Conclusions
ADVANTAGE:
Class AB operation improves on Class B linearity.
Power conversion efficiency similar to Class B
DISADVANTAGES:
1. Emitter resistors absorb output power.
2. Power dissipation for low signal levels higher than Class B.
3. Temperature matching will be needed more so.
if emitter degeneration resistors are not used.

2008 Kenneth R. Laker, updated 26Nov12 KRL

19