SHINDENGEN

VX-2 Series Power MOSFET

2SK2185
(F5F50VX2)

N-Channel Enhancement type

OUTLINE DIMENSIONS
Case : FTO-220

(Unit : mm)

500V5A
FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
APPLICATION
Switching power supply of AC 100V input
High voltage power supply
Inverter

RATINGS
Absolute Maximum Ratings iTc = 25j
Item
Symbol
Conditions
Storage Temperature
T stg
T ch
Channel Temperature
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Continuous Drain CurrentiDCj
I DP
Continuous Drain CurrentiPeak)
Continuous Source CurrentiDCj
IS
Total Power Dissipation
PT
I AS
Single Pulse Avalanche Current
T ch = 25
u Terminals to case, AC 1 minute
Dielectric Strength
snq i Recommended torque : 0.3Nm j
Mounting Torque

Ratings
Unit
-55`150

150
500
V
}30
5
15
A
5
30
W
5
A
2
u
0.5
mE

VX-2 Series Power MOSFET

Electrical Characteristics Tc = 25
Item
Symbol
V(BR)DSS
Drain-Source Breakdown Voltage
I DSS
Zero Gate Voltage Drain Current
I GSS
Gate-Source Leakage Current
Forward Tran]conductance
gfs
Static Drain-Source On-]tate Resistance RDS(ON)
Gate Threshold Voltage
VTH
VSD
Source-Drain Diode Forwade Voltage
jc
The\mal Resistance
Qg
Total Gate Charge
Ciss
Input Capacitance
Reverse Transfer Capacitance
Crss
Output Capacitance
C oss
Turn-On Time
ton
toff
Turn-Off Time

2SK2185 ( F5F50VX2 )
Conditions
I D = 1mA, VGS = 0V
VDS = 500V, VGS = 0V
VGS = }30V, VDS = 0V
I D = 2.5A, VDS = 10V
I D = 2.5A, VGS = 10V
I D = 1mA, VDS = 10V
I S = 2.5A, VGS = 0V
junction to case
VDD = 400V, VGS = 10V, I D = 5A
VDS = 10V, VGS = 0V, f = 1MHZ
I D = 2.5A, VGS = 10V, RL = 60

Min.
500

Typ.

1. 5

3. 8
1. 1
3. 0

2. 5

21
580
45
140
55
110

Max.
250
}0. 1

Unit
V
A

S
1. 5

3. 5
V
1. 5
4. 17 /L
nC
pF
90
170

ns

2SK2185

Transfer Characteristics

10
Tc = 55C

Drain Current ID [A]

25C

100C
150C

VDS = 25V
pulse test
TYP
0

10

15

Gate-Source Voltage VGS [V]

20

2SK2185

Static Drain-Source On-state Resistance

Static Drain-Source On-state Resistance RDS(ON) []

10

ID = 2.5A

0.1

VGS = 10V
pulse test
TYP
-50

50

100

Case Temperature Tc [C]

150

2SK2185

Gate Threshold Voltage

Gate Threshold Voltage VTH [V]

VDS = 10V
ID = 1mA
TYP
-50

50

100

Case Temperature Tc [C]

150

2SK2185

Safe Operating Area

100

Drain Current ID [A]

10

100s
200s
1

R DS(ON)
limit

1ms

10ms
0.1
DC
Tc = 25C
Single Pulse

0.01

10

100

Drain-Source Voltage VDS [V]

1000

Transient Thermal Impedance jc(t) [C/W]

0.01
10-5

0.1

10

100

10-4

10-3

2SK2185

10-1

Time t [s]

10-2

100

Transient Thermal Impedance

101

102

2SK2185

Capacitance

1000

Capacitance Ciss Coss Crss [pF]

Ciss

100
Coss

Crss

Tc=25C
TYP
10
0

20

40

60

80

Drain-Source Voltage VDS [V]

100

2SK2185

Power Derating

100

Power Derating [%]

80

60

40

20

50

100

Case Temperature Tc [C]

150

2SK2185

Gate Charge Characteristics

20

400
15
VDD = 400V
200V
300

100V
10

VDS
VGS

200

5
100

ID = 5A
0

10

20

30

Gate Charge Qg [nC]

40

50

Gate-Source Voltage VGS [V]

Drain-Source Voltage VDS [V]

500

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