FDD5614P

60V P-Channel PowerTrench MOSFET

General Description

Features

This 60V P-Channel MOSFET uses Fairchilds high

voltage PowerTrench process. It has been optimized
for power management applications.

15 A, 60 V. RDS(ON) = 100 m @ VGS = 10 V

RDS(ON) = 130 m @ VGS = 4.5 V

Applications

Fast switching speed

DC/DC converter
Power management

High performance trench technology for extremely

low RDS(ON)

Load switch

High power and current handling capability

D
G

S
TO-252
D

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

60

VGSS

Gate-Source Voltage

20

ID

Drain Current

15
45

A
W

Continuous

(Note 3)

Pulsed
PD

(Note 1a)

Power Dissipation for Single Operation

TJ, TSTG

(Note 1)

42

(Note 1a)

3.8

(Note 1b)

1.6

Operating and Storage Junction Temperature Range

55 to +175

Thermal Characteristics
RJC

Thermal Resistance, Junction-to-Case

(Note 1)

3.5

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD5614P

FDD5614P

13

12mm

2500 units

2001 Fairchild Semiconductor Corporation

FDD5614P Rev C(W)

FDD5614P

February 2001

Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max Units

Drain-Source Avalanche Ratings (Note 1)

WDSS
IAR

Single Pulse Drain-Source

Avalanche Energy
Maximum Drain-Source Avalanche
Current

VDD = 30 V,

ID = 4.5 A

90

mJ

4.5

Off Characteristics
VGS = 0 V, ID = 250 A

60

BVDSS
BVDSS
TJ
IDSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

VDS = 48 V,

VGS = 0 V

IGSSF

GateBody Leakage, Forward

VGS = 20V,

VDS = 0 V

100

nA

IGSSR

GateBody Leakage, Reverse

VGS = 20 V,

VDS = 0 V

100

nA

On Characteristics

ID = 250 A, Referenced to 25C

49

mV/C

(Note 2)

VGS(th)
VGS(th)
TJ

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Gate Threshold Voltage

Temperature Coefficient

ID = 250 A, Referenced to 25C

RDS(on)

Static DrainSource
OnResistance

76
99
137

ID(on)

OnState Drain Current

VGS = 10 V,
ID = 4.5 A
ID = 3.9 A
VGS = 4.5 V,
VGS = 10 V,ID = 4.5 A,TJ=125C
VGS = 10 V,
VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V,

ID = 3 A

VDS = 30 V,
f = 1.0 MHz

V GS = 0 V,

1.6

V
mV/C

100
130
185

20

A
8

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

tf

TurnOff Fall Time

Qg

Total Gate Charge

Qgs

GateSource Charge

Qgd

GateDrain Charge

759

pF

90

pF

39

pF

(Note 2)

VDD = 30 V,
VGS = 10 V,

VDS = 30V,
VGS = 10 V

ID = 1 A,
RGEN = 6

ID = 4.5 A,

14

ns

10

20

ns

19

34

ns

12

22

ns

15

24

nC

2.5

nC

3.0

nC

DrainSource Diode Characteristics and Maximum Ratings

IS

Maximum Continuous DrainSource Diode Forward Current

VSD

DrainSource Diode Forward

Voltage

VGS = 0 V,

IS = 3.2 A

(Note 2)

0.8

3.2

1.2

FDD5614P Rev C(W)

FDD5614P

Electrical Characteristics

the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) RJA = 40C/W when mounted on a

1in2 pad of 2 oz copper

b) RJA = 96C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
PD
RDS(ON)
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

FDD5614P Rev C(W)

FDD5614P

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

FDD5614P

Typical Characteristics

1.8

15

12

-4.5V

-4.0V

-6.0V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

VGS = -10V

-3.5V
9

6
-3.0V
3
-2.5V

VGS = -3.5V
1.6
-4.0V
1.4

-4.5V
-5.0V

1.2

-6.0V
-10V

0.8

0
0

Figure 1. On-Region Characteristics.

10

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.
0.4

2
ID = -4.5A
VGS = -10V

1.8

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

-VDS, DRAIN-SOURCE VOLTAGE (V)

1.6
1.4
1.2
1
0.8
0.6
0.4
-50

-25

25

50

75

100

125

150

ID = -2.3 A
0.3

0.2

TA = 125oC

0.1

TA = 25oC

175

10

TJ, JUNCTION TEMPERATURE ( C)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
100

ID, DRAIN CURRENT (A)

VDS = -5V

TA = -55oC

IS, REVERSE DRAIN CURRENT (A)

15
o

25 C

12
125oC
9

VGS = 0V
10
TA = 125oC
25oC

-55oC

0.1

0.01

0.001

0
1

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDD5614P Rev C(W)

FDD5614P

Typical Characteristics

1000
f = 1MHz
VGS = 0 V

ID = -4.5A
8

800

-30V

VDS = -40V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

-20V

CISS
600

400

200

0
0

12

16

10

Qg, GATE CHARGE (nC)

20

30

40

50

60

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

40
P(pk), PEAK TRANSIENT POWER (W)

100
100s
ID, DRAIN CURRENT (A)

COSS

CRSS

1ms
10ms

RDS(ON) LIMIT
10

100ms
1s
1

10s
DC

VGS = -10V
SINGLE PULSE
RJA = 96oC/W

0.1

TA = 25oC
0.01

SINGLE PULSE
RJA = 96C/W
TA = 25C

30

20

10

0
0.1

10

100

0.1

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

10

100

1000

t1, TIME (sec)

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) + RJA

RJA = 96C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

t1

0.01

t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDD5614P Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DOME
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST

FASTr
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP

PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
SuperSOT-3
SuperSOT-6
SuperSOT-8

SyncFET
TinyLogic
UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G