AO4466

30V N-Channel MOSFET

General Description

Product Summary

The AO4466 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.

VDS (V) = 30V

ID = 10A
RDS(ON) < 23m
RDS(ON) < 35m

(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)

100% UIS Tested

100% Rg Tested

* RoHS and Halogen-Free Compliant

SOIC-8
Top View
D
D

Bottom View

D
D

G
S

S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current AF
Pulsed Drain Current

Units
V

20

10

TA=70C

ID

64
3.1

PD

TA=70C

IDM
TA=25C

Power Dissipation

Maximum
30

Avalanche Current B, G

IAR

12

Repetitive avalanche energy 0.1mH B, G

EAR

mJ

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C

Rev.10.0: July 2013

Symbol
t 10s
Steady-State
Steady-State

RJA
RJL

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Typ
36
62
18

Max
40
75
24

Units
C/W
C/W
C/W

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AO4466

Electrical Characteristics (TJ=25C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

1
TJ=55C

Gate-Body leakage current

VDS=0V, VGS= 20V

VDS=VGS ID=250A

1.5

On state drain current

VGS=4.5V, VDS=5V

64

VGS=10V, ID=10A

100

nA

2.1

2.6

16.7

23

24.3

30
35

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=5A

23.7

gFS

Forward Transconductance

VDS=5V, ID=10A

17

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

TJ=125C

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance
Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

0.75

VGS=10V, VDS=15V, ID=10A

m
m
S

2.4

373

448

pF

46

67

88

pF

24

41

58

pF

0.6

1.8

2.8

5.7

7.1

8.6

nC

2.7

3.5

4.2

nC

298
VGS=0V, VDS=15V, f=1MHz

Gate Threshold Voltage

Units
V

VDS=30 VGS=0V

VGS(th)

Crss

Max

30

IGSS
ID(ON)

Typ

1.2

nC

Qgd

Gate Drain Charge

1.6

nC

tD(on)

Turn-On DelayTime

4.3

ns

2.8

ns

15.8

ns

VGS=10V, VDS=15V, RL=1.5,

RGEN=3

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf
trr

Turn-Off Fall Time

IF=10A, dI/dt=100A/s

8.4

10.5

12.6

Qrr

3.6

4.5

5.4

trr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s

IF=10A, dI/dt=500A/s
Body Diode Reverse Recovery Time

4.7

6.0

7.2

Qrr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/s

5.3

6.6

Body Diode Reverse Recovery Time

ns
ns
nC
ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0, rated VDS=30V and VGS=10V
Rev 9: May. 2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.10.0: July 2013

www.aosmd.com

Page 2 of 6

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60

15
10V

6V

50

VDS=5V

12

4.5V
ID(A)

ID (A)

40
30

6
20

125C

VGS=3.5V
3

10
0

25C

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

2.5

3.5

4.5

VGS(Volts)
Figure 2: Transfer Characteristics

40
Normalized On-Resistance

1.8

35
RDS(ON) (m
)

VGS=4.5V

30
25
20
VGS=10V
15
10

VGS=10V
1.6
VGS=4.5V

1.4
1.2
1
0.8

10

15

20

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

60

1.0E+01
ID=10A
1.0E+00
1.0E-01

40
IS (A)

RDS(ON) (m
)

50

125C
1.0E-02

125C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics

Rev.10.0: July 2013

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AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600

10
VDS=15V
ID=10A

500
Ciss

Capacitance (pF)

VGS (Volts)

8
6
4

400
300
200
Coss

100

0
0

4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics

100.0

10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

100.0

In descending order
TA=25C, 100C, 125C,

RDS(ON)
limited

10s

10.0
ID (Amps)

IA, Peak Avalanche Current (A)

Crss

10.0

100s

DC

0.1

TJ(Max)=150C
TA=25C

0.0

1.0
1

10

100

1ms
10ms
100ms
1s
10s

1.0

1000

Time in Avalache, tA (ms)

Figure 9: Single Pulse Avalanche Capability

0.1

10

100

VDS (Volts)

Figure 10: Maximum Forward Biased Safe

Operating Area (Note E)

50

Power (W)

40

TJ(Max)=150C
TA=25C

30

20

10

0
0.0001

0.01

100

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)

Rev.10.0: July 2013

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Page 4 of 6

AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=75C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
PD
Single Pulse

Ton
T

0.01
1E-05

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance

Rev.10.0: July 2013

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Page 5 of 6

AO4466

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+

VDC

VDC

Qgs

Vds

Qgd

DUT
Vgs
Ig

Charge

Res istive Switching Test Circuit & Waveforms

RL
Vds
Vds

DUT

Vgs

+
VDC

90%
Vdd

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L
EAR= 1/2 LI

Vds

2
AR

BVDSS

Vds

Id

Vgs

Vgs

VDC

Rg

I AR

Vdd
Id

DUT
Vgs

Vgs

Diode Recovery Tes t Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs
Vds -

Isd
Vgs

Ig

Rev.10.0: July 2013

Isd

+
VDC

IF

trr

dI/dt
IRM

Vdd

Vdd
Vds

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Page 6 of 6