BPV11F

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Vishay Semiconductors

Silicon NPN Phototransistor

FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
High radiant sensitivity
Daylight blocking filter matched with 940 nm
emitters
Fast response times

12784

Angle of half sensitivity: = 15

Base terminal connected
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1 plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.

APPLICATIONS
Detector for industrial electronic circuitry, measurement
and control

PRODUCT SUMMARY
COMPONENT

Ica (mA)

(deg)

0.5 (nm)

15

900 to 980

PACKAGING

REMARKS

PACKAGE FORM

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1

BPV11F
Note
Test condition see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE
BPV11F
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

SYMBOL

VALUE

UNIT

Collector base voltage

PARAMETER

TEST CONDITION

VCBO

80

Collector emitter voltage

VCEO

70

Emitter base voltage

VEBO

V
mA

Collector current
Collector peak current
Power dissipation

IC

50

tp/T = 0.5, tp 10 ms

ICM

100

mA

Tamb 47 C

PV

150

mW

Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient

Rev. 1.6, 03-May-13

Tj

100

Tamb

- 40 to + 100

C
C

Tstg

- 40 to + 100

t 5 s, 2 mm from body

Tsd

260

Connected with Cu wire, 0.14 mm2

RthJA

350

K/W

Document Number: 81505

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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BPV11F
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Vishay Semiconductors

PV - Power Dissipation (mW)

200
160

120
RthJA
80

40
0
0

20
40
60
80
Tamb - Ambient Temperature (C)

94 8300

100

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

IC = 1 mA

V(BR)CEO

70

VCE = 10 V, E = 0

Collector emitter breakdown voltage

Collector emitter dark current

TYP.

MAX.

UNIT

ICEO

50

nA

DC current gain

VCE = 5 V, IC = 5 mA, E = 0

hFE

450

Collector emitter capacitance

VCE = 0 V, f = 1 MHz, E = 0

CCEO

15

Collector base capacitance

VCE = 0 V, f = 1 MHz, E = 0

CCBO

19

pF

Ee = 1 mW/cm2, = 950 nm, VCB = 5 V

Ica

mA

15

deg

Collector light current

Angle of half sensitivity

pF

930

nm

0.5

900 to 980

nm

Ee = 1 mW/cm2, = 950 nm, IC = 1 mA

VCEsat

130

Turn-on time

VS = 5 V, IC = 5 mA, RL = 100

ton

Turn-off time

VS = 5 V, IC = 5 mA, RL = 100

toff

Cut-off frequency

VS = 5 V, IC = 5 mA, RL = 100

fc

110

kHz

Wavelength of peak sensitivity

Range of spectral bandwidth
Collector emitter saturation voltage

300

mV
s

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

2.0

Ica rel - Relative Collector Current

ICEO - Collector Dark Current (nA)

104

10

VCE = 10 V
102

101

10
20
94 8249

40

60

80

100

Tamb - Ambient Temperature (C)

Fig. 2 - Collector Dark Current vs. Ambient Temperature

Rev. 1.6, 03-May-13

1.8
VCE = 5 V
Ee = 1 mW/cm2
= 950 nm

1.6
1.4
1.2
1.0
0.8
0.6
0

94 8239

20

40

60

80

100

Tamb - Ambient Temperature (C)

Fig. 3 - Relative Collector Current vs. Ambient Temperature

Document Number: 81505

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For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV11F
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CCBO - Collector Base Capacitance (pF)

Vishay Semiconductors

10

1
VCE = 5 V
= 950 nm

0.1

0.01
0.01

0.1

Ee - Irradiance (mW/cm)

94 8244

Ica - Collector Light Current (mA)

100
= 950 nm
Ee = 1 mW/cm

0.5 mW/cm2
2

0.2 mW/cm

0.1 mW/cm2

0.05 mW/cm2
0.02 mW/cm2
0.1
0.1

100

10

VCE - Collector Emitter Voltage (V)

94 8245

0
1

100

10

VCB - Collector Base Voltage (V)

Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage

20
f = 1 MHz

16

12

0
0.1

100

10

VCE - Collector Ermitter Voltage (V)

Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage

ton/toff - Turn-on/Turn-off Time (s)

VCE = 5 V

B - Amplification

12

600

400

200

0.1

10

IC - Collector Current (mA)

Fig. 6 - Amplification vs. Collector Current

Rev. 1.6, 03-May-13

0.1

800

94 8250

12

94 8247

Fig. 5 - Collector Light Current vs. Collector Emitter Voltage

0
0.01

f = 1 MHz

16

94 8246

Fig. 4 - Collector Light Current vs. Irradiance

10

20

10

CCEO - Collector Ermitter Capacitance (pF)

Ica - Collector Light Current (mA)

100

VCE = 5 V
RL = 100
= 950 nm

10
8
6

ton
4

100
94 8253

toff

12

16

IC - Collector Current (mA)

Fig. 9 - Turn-on/Turn-off Time vs. Collector Current

Document Number: 81505

3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV11F
www.vishay.com

Vishay Semiconductors
10

20
30

0.8

0.6

0.4

0.2

40
1.0
0.9

50

0.8

60
70

0.7

- Angular Displacement

1.0

Srel - Relative Sensitivity

S()rel - Relative Spectral Sensitivity

80

0
800

900

0.2

94 8248

- Wavelength (nm)

94 8258

0.4

0.6

1100

1000

Fig. 10 - Relative Spectral Sensitivity vs. Wavelength

Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement

5.75

0.15

PACKAGE DIMENSIONS in millimeters

0.8

+ 0.2
- 0.1

Chip position
0.15

0.3

0.15

8.6

7.6

0.3

2.

45

(s

0.8

Area not plane

+ 0.2
- 0.1

0.5

+ 0.2
- 0.1

0.5

+ 0.15

1.5

0.25

0.8

+ 0.2
- 0.1

< 0.7

35

0.5

12.3

e)

er

ph

(4.55)

2.54 nom.

1.27 nom.

technical drawings
according to DIN
specifications

Drawing-No.: 6.544-5188.01-4
Issue:1; 01.07.96
96 12200

Rev. 1.6, 03-May-13

Document Number: 81505

4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 02-Oct-12

Document Number: 91000