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ZTX650

ZTX651
PARAMETER

ZTX650

SYMBOL

MIN. TYP.
140

ZTX651
MAX. MIN. TYP.

175

140

UNIT CONDITIONS.
MAX.

175

MHz

Transition
Frequency

fT

Switching Times

ton

45

45

ns

toff

800

800

ns

30

Output Capacitance Cobo

30

IC=100mA, VCE=5V
f=100MHz
IC=500mA, VCC=10V
IB1=IB2=50mA

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance:Junction to Ambient1


Junction to Ambient2
Junction to Case

Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

175
116
70

C/W
C/W
C/W

2.0

1.5

Am

0.5
0

-40 -20

20 40

bie

nt t

te

em

pe

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.


PARAMETER

SYMBOL

ZTX650

ZTX651

UNIT

Collector-Base Voltage

VCBO

60

80

Collector-Emitter Voltage

VCEO

45

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

IC

1
5.7

W
mW/C

-55 to +200

ra

PARAMETER

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=t1/tP
tP

100

Ptot
Tj:Tstg

SYMBOL

ZTX650
MIN. TYP.

ZTX651
MAX. MIN. TYP.

D=0.1
Single Pulse

0.001

0.01

0.1

10

100

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

MAX.

UNIT CONDITIONS.

60

80

IC=100A

Collector-Emitter
V(BR)CEO
Breakdown Voltage

45

60

IC=10mA*

Emitter-Base
V(BR)EBO
Breakdown Voltage

IE=100A

10

A
A
A
A

VCB=45V
VCB=60V
VCB=45V,Tamb=100C
VCB=60V,Tamb=100C

0.1

VEB=4V

0.1

ICBO

0.1

10

D=0.2

0
0.0001

60

Collector-Base
V(BR)CBO
Breakdown Voltage

Collector Cut-Off
Current

D=0.5

T -Temperature (C)

3-220

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

D=1 (D.C.)

t1

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5

as

C
B

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ISSUE 2 JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

Continuous Collector Current

THERMAL CHARACTERISTICS

1.0

ZTX650
ZTX651

NPN SILICON PLANAR


MEDIUM POWER TRANSISTORS

Emitter Cut-Off
Current

IEBO

0.1

Collector-Emitter
Saturation Voltage

VCE(sat)

0.12
0.23

0.3
0.5

0.12
0.23

0.3
0.5

V
V

IC=1A, IB=100mA*
IC=2A, IB=200mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

1.25

0.9

1.25

IC=1A, IB=100mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.8

0.8

IC=1A, VCE=2V*

3-219

ZTX650
ZTX651
PARAMETER

ZTX650

SYMBOL

MIN. TYP.
140

ZTX651
MAX. MIN. TYP.

175

140

UNIT CONDITIONS.
MAX.

175

MHz

Transition
Frequency

fT

Switching Times

ton

45

45

ns

toff

800

800

ns

30

Output Capacitance Cobo

30

IC=100mA, VCE=5V
f=100MHz
IC=500mA, VCC=10V
IB1=IB2=50mA

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance:Junction to Ambient1


Junction to Ambient2
Junction to Case

Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

175
116
70

C/W
C/W
C/W

2.0

1.5

Am

0.5
0

-40 -20

20 40

bie

nt t

te

em

pe

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.


PARAMETER

SYMBOL

ZTX650

ZTX651

UNIT

Collector-Base Voltage

VCBO

60

80

Collector-Emitter Voltage

VCEO

45

Emitter-Base Voltage

VEBO

Peak Pulse Current

ICM

IC

1
5.7

W
mW/C

-55 to +200

ra

PARAMETER

per

tu

re

at u
re

60 80 100 120 140 160 180 200

D=t1/tP
tP

100

Ptot
Tj:Tstg

SYMBOL

ZTX650
MIN. TYP.

ZTX651
MAX. MIN. TYP.

D=0.1
Single Pulse

0.001

0.01

0.1

10

100

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

MAX.

UNIT CONDITIONS.

60

80

IC=100A

Collector-Emitter
V(BR)CEO
Breakdown Voltage

45

60

IC=10mA*

Emitter-Base
V(BR)EBO
Breakdown Voltage

IE=100A

10

A
A
A
A

VCB=45V
VCB=60V
VCB=45V,Tamb=100C
VCB=60V,Tamb=100C

0.1

VEB=4V

0.1

ICBO

0.1

10

D=0.2

0
0.0001

60

Collector-Base
V(BR)CBO
Breakdown Voltage

Collector Cut-Off
Current

D=0.5

T -Temperature (C)

3-220

at Tamb=25C
derate above 25C

Operating and Storage Temperature Range

D=1 (D.C.)

t1

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

200

Thermal Resistance (C/W)

Max Power Dissipation - (Watts)

2.5

as

C
B

Power Dissipation

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ISSUE 2 JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

Continuous Collector Current

THERMAL CHARACTERISTICS

1.0

ZTX650
ZTX651

NPN SILICON PLANAR


MEDIUM POWER TRANSISTORS

Emitter Cut-Off
Current

IEBO

0.1

Collector-Emitter
Saturation Voltage

VCE(sat)

0.12
0.23

0.3
0.5

0.12
0.23

0.3
0.5

V
V

IC=1A, IB=100mA*
IC=2A, IB=200mA*

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

1.25

0.9

1.25

IC=1A, IB=100mA*

Base-Emitter
Turn-On Voltage

VBE(on)

0.8

0.8

IC=1A, VCE=2V*

3-219

ZTX650
ZTX651
TYPICAL CHARACTERISTICS
0.6
0.5

IC/IB=10
175

hFE - Gain

VCE(sat) - (Volts)

225
0.4
0.3
0.2

VCE=2V
125

0.1

75

0.0001

0.001

0.01

0.1

10

0.01

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

hFE v IC

10

1.4
1.2

1.0

1.0

VBE - (Volts)

VBE(sat) - (Volts)

1.2

IC/IB=10

0.8

VCE=2V
0.8

0.6
0.6
0.4
0.0001

0.01

0.1

10

0.0001

0.01

0.1

IC - Collector Current (Amps)

VBE(sat) v IC

VBE(on) v IC

10

Single Pulse Test at Tamb=25C


td
tr
tf
ns
140

Switching time

0.1

0.001

IC - Collector Current (Amps)

10

IC - Collector Current (Amps)

0.001

D.C.
1s
100ms
10ms
1.0ms
100s

0.01
0.1

120

1200

100

1000

80

800

60

600

40

400

20

200

ZTX650
ZTX651

ZTX650/51-5

10

IB1=IB2=IC/10
ts
ns
1400

0
0.01

ts

td

tf
tr

0.1

100

VCE - Collector Voltage (Volts)

IC - Collector Current (Amps)

Safe Operating Area

Switching Speeds

3-221

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