MITSUBISHI <MOSFET MODULE>

FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

FM600TU-07A

ID(rms) .......................................................... 300A

VDSS ............................................................... 75V
Insulated

Type
6-elements in a pack
Thermistor inside
UL Recognized
File No.E323585

APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm
110
97 0.25
70.9
32

6.5
16

16
36

36
10

35 1.0

10
30

6.5

(SCREWING DEPTH)

25

90

14

20
32

CIRCUIT DIAGRAM

(8)GVP
(2)SVP

80

14

20
32

(7)GUP
(1)SUP

75

14

20
16.5

4
22.57

14

7-M6NUTS

3.96

9.2
5-6.5
38
6

(6)

12

3
(8.7)

67 0.25

9.1

13

14

4-6.5
MOUNTING HOLES

11.5

(6)

(15.8)
3 6.5
7

(14.5)

(14.5)

(6)

7
N

(17.5)

22.75

26 1.0
0.5

30

L A B E L

15.2
16.5

Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1

(9)GWP
(3)SWP
V

(10)GUN

(11)GVN

(12)GWN

(4)SUN
N

(5)SVN

(6)SWN

(13)

(14)

(1)SUP

(2)SVP

(3)SWP

(7)GUP

(8)GVP

(9)GWP (10)GUN (11)GVN (12)GWN

(13)TH1 (14)TH2

(4)SUN

(5)SVN

(6)SWN

A
B

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tj = 25C unless otherwise specified.)

Symbol
VDSS
VGSS
ID
IDM
IDA
IS*1
ISM*1
PD*4
PD*4
Tch
Tstg
Visol

Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage

Mounting torque

Weight

Rating
75
20
300
600
300
300
600
960
1300
40 ~ +150
40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600

Conditions
G-S Short
D-S Short
TC = 139C*3
Pulse*2
L = 10H Pulse*2
Pulse*2
TC = 25C
TC = 25C*3

Main terminal to base plate, AC 1 min, f=60Hz, RMS

Main Terminal M6
Mounting to heat sink M6
Typical value

Unit
V
V
A
A
A
A
A
W
W
C
C
V
Nm
Nm
g

ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise specified.)

Symbol

Item

IDSS
VGS(th)
IGSS
rDS(on)
(chip)
VDS(on)
(chip)

Drain cutoff current

Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage

RDD'-SS'

Internal lead resistance

Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(j-c)
Rth(j-c)
Rth(c-s)
Rth(c-s)

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance

Conditions
VDS = VDSS, VGS = 0V
ID = 30mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 300A
VGS = 15V
ID = 300A
VGS = 15V
ID = 300A
terminal-chip

Tj = 25C
Tj = 125C
Tj = 25C
Tj = 125C
Tj = 25C
Tj = 125C

VDS = 10V
VGS = 0V
VDD = 48V, ID = 300A, VGS = 15V

VDD = 48V, ID = 300A, VGS1 = VGS2 = 15V

RG = 4.2, Inductive load switching operation
IS = 300A

IS = 300A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)

Min.

4.7

Limits
Typ.

0.53
0.87
0.16
0.26
0.7
1.0

1650

4.8

0.1
0.09

Max.
1
7.3
1.5
0.73

0.22

110
15
10

450
600
600
600
200

1.3
0.13
0.096

Min.

Limits
Typ.
100
4000

Max.

Unit
mA
V
A
m
V
m

nF
nC

ns

ns
C
V
K/W

NTC THERMISTOR PART

Symbol
R25*6
B*6

Parameter
Resistance
B Constant

Conditions
25C*5

TTH =
Resistance at TTH = 25C, 50C*5

Unit
k
K

*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).

*2: Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj max rating.
*3: TC measured point is just under the chips. If use this value, Rth(s-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)
*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of =0.9 W/(mK).
Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
Chip

OUTPUT CHARACTERISTICS
(TYPICAL)
Chip
VGS = 20V

DRAIN CURRENT ID (A)

500

600
12V

VDS = 10V

10V
500

15V

400
300
9V

200
100

DRAIN CURRENT ID (A)

600

400

Tj = 25C

Tj = 125C

300
200
100

Tj = 25C
0

0.2

0.4

0.6

0.8

1.0

VGS = 12V
0.8
VGS = 15V
0.6
0.4
0.2
0

20

40 60

80 100 120 140 160

GATE THRESHOLD VOLTAGE VGS(th) (V)

DRAIN-SOURCE
ON-STATE RESISTANCE rDS(on) (m)

1.0

13

15

7
6
5

VDS = 10V
ID = 30mA

4
3
2
1
0

20

40 60

80 100 120 140 160

JUNCTION TEMPERATURE Tj (C)

JUNCTION TEMPERATURE Tj (C)

DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
Chip

102

1.0

Tj = 25C

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)

7
5

Ciss

0.8

0.6

0.4

ID = 600A

0.2

ID = 300A

CAPACITANCE (nF)

DRAIN-SOURCE
ON-STATE VOLTAGE VDS(on) (V)

11

GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)

DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
Chip
ID = 300A

GATE-SOURCE VOLTAGE VGS (V)

DRAIN-SOURCE VOLTAGE VDS (V)

1.2

3
2

101
7
5

Coss
3

Crss

VGS = 0V
0

12

ID = 150A
16
20

GATE-SOURCE VOLTAGE VGS (V)

100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

GATE CHARGE CHARACTERISTICS

(TYPICAL)

16
VDD = 24V

VDD = 48V

12

103

ID = 300A

SOURCE CURRENT IS (A)

GATE-SOURCE VOLTAGE VGS (V)

20

103

500

1000

1500

2000

102
7
5
3
2

104

0.6

0.7

0.8

0.9

1.0

7
5

tr
tf

7
5

Conditions:
VDD = 48V
VGS = 15V
RG = 4.2
Tj = 125C
Inductive load

5 7 102

SWITCHING TIME (ns)

td(on)

td(off)
td(on)
tr

3
2

103
7
5

tf

3
2

Conditions:
VDD = 48V
VGS = 15V
ID = 300A
Tj = 125C
Inductive load

102
7
5
3
2

101

5 7 103

10

20

30

40

DRAIN CURRENT ID (A)

GATE RESISTANCE RG ()

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

7
5

Eoff

3
2

Eon

100
7
5
3
2

Err
Conditions:
VDD = 48V
VGS = 15V
RG = 4.2
Tj = 125C
Inductive load

101
7
5
3
2
2

5 7 102

DRAIN CURRENT ID (A)

5 7 103

102

SWITCHING ENERGY (mJ/pulse)

SWITCHING TIME (ns)

Tj = 25C

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

SWITCHING ENERGY (mJ/pulse)

Tj = 125C

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

102

102 1
10

SOURCE-DRAIN VOLTAGE VSD (V)

td(off)

101

VGS = 0V

GATE CHARGE QG (nC)

101 1
10

7
5

101
0.5

2500

7
5

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Chip
(TYPICAL)

50

7
5
3
2

101 Eoff
7
5
3
2

Eon

100

7
5
Err
3
2

101

Conditions:
VDD = 48V
VGS = 15V
ID = 300A
Tj = 125C
Inductive load

7
5
3
2

102

10 15 20 25 30 35 40 45
GATE RESISTANCE RG ()

Mar. 2013

MITSUBISHI <MOSFET MODULE>

FM600TU-07A
HIGH POWER SWITCHING USE
INSULATED PACKAGE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE
(TYPICAL)
103

103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101

100

Irr (A), trr (ns)

3
2

NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)

7
5

trr

102
7
5

Irr

3
2

Conditions:
VDD = 48V
VGS = 15V
RG = 4.2
Tj = 25C
Inductive load

101
7
5
3
2

100 1
10

5 7 102

7
5
3
2

101

101

7
5

7
5
3
2

3
2

102

102
7
5

Single pulse
3
2 Tj = 25C
Per unit base = Rth(j-c) = 0.13K/W

103
105 2 3 5 7104 2 3 5 7 103

103

5 7 103

7
5
3
2

TIME (s)

SOURCE CURRENT IS (A)

CHIP LAYOUT
(110)
(97)

49.2

29.2

TrUP

13

TrVP

TrWP

TrVN

TrUN

12

(90)

(80)

(67)

14

TrWN

LABEL SIDE

24.8
57.8
90.8

The company name and product names herein are the trademarks and registered trademarks of the respective companies.
Mar. 2013

<MOSFET MODULES >

HIGH POWER SWITCHING
USE INSULATED TYPE

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March-2013