Beruflich Dokumente
Kultur Dokumente
Foundry technologies
0.18-m CMOS, RF CMOS and SiGe BiCMOS
Highlights
Standard Features
devices, including:
Surface-channel field-effect
transistors (FETs)
Low-resistance cobalt-silicide n+
tuning ranges
diffusions
interlevel dielectrics
inductor models
High-value, low-tolerance
capacitors
Wire-bond or C4 solder-bump
terminals
Optional Features
design tools
SiGe technology
Related Technologies
CMOS 7RF
BiCMOS 7WL
BiCMOS 7HP
Process
Industry-standard
0.18-m CMOS
Wiring
Copper or aluminum
Bipolar devices
N/A
N/A
3 HBTs, wireless
focus
2 HBTs, high-speed
optical/digital focus
Passive devices
Metal-insulator-metal
(MIM)
Category
0.18 m
Voltage (VDD)
1.8 V
0.18 m
0.11 m / 0.14 m
0.43 V / -0.38 V
600 mA / 260 mA
<80 pA/m (at 25C)
3.5 nm
0.4 m
0.29 m
0.64 V / -0.67 V
550 mA / 235 mA
<1 pA/m (at 25C)
7 nm
CMOS Specifications
CMOS 7SF
CMOS 7RF
BiCMOS 7WL
BiCMOS 7HP
Isolation
STI
STI
STI / DT
STI / DT
Levels of metal
26
47
47
47
Metallization
Cu
Cu (M1), Al (Mx)
Cu (M1), Al (Mx)
Cu
M1 pitch / thickness
0.44 m / 0.31 m
0.44 m / 0.31 m
0.44 m / 0.31 m
0.44 m / 0.31 m
Mx pitch / thickness
0.56 m / 0.31 m
0.56 m / 0.48 m
0.56 m / 0.48 m
0.56 m / 0.31 m
0.83 m
2.0 m
2.0 m
4.0 m
0.54 m
4.0 m
4.0 m
0.31 m
3.0 m
4.0 m
3.0 m
4.0 m
FET devices
Standard NFET / PFET
Thick-oxide NFET / PFET
High Vt NFET / PFET
High gain NFET / PFET
Zero Vt NFET
Triple-well NFET
Thick-oxide triple-well NFET
Color key: Blue values denote aluminum; red values denote copper.
or low-power applications. It is
Bipolar Specifications
BiCMOS 7WL
BiCMOS 7HP
Isolation
STI / DT
STI / DT
Subcollector
Implanted
Buried
Emitter
Not self-aligned
Self-aligned
Transistor
Gain (34)
Va
BVceo / BVcbo
Ceb / Ccb
Re
Ft (at Vce = 1 V)
Fmax (at Vce = 1 V)
Ae min (length width)
High-speed
140
155 V
3.3 V / 11 V
5.7 / 1.97 fF/m2
9W
60 GHz
85 GHz
0.72 m 0.24 m
Passive Devices
Capacitors
Single MIM
Dual MIM
Thick-oxide MOS
Fuses
Varactors
Collector-base junction
Hyperabrupt junction
MOS
High-speed
500
90 V
1.8 V / 6.4 V
9.5 / 4.6 fF/m2
2.5 W
120 GHz
100 GHz
0.64 m 0.2 m
High-breakdown
350
120 V
4.25 V / 12.5 V
8.5 / 2.8 fF/m2
45 W
27 GHz
57 GHz
0.64 m 0.2 m
CMOS 7SF
CMOS 7RF
BiCMOS 7WL
BiCMOS 7HP
Laser
E-fuses
E-fuses
Q = 10
Q = 18
Q = 24
Q = 10
Q = 18
Q = 24
105 W/ / 15%
72 W/ / 10%
270 W/ / 15%
1600 W/ / 20%
61 W/ / 6%
105 W/ / 15%
72 W/ / 10%
270 W/ / 15%
1600 W/ / 20%
61 W/ / 6%
105 W/ / 15%
72 W/ / 10%
260 W/ / 15%
1600 W/ / 25%
142 W/ / 10%
8.1 W/ / 15%
Inductors1
Analog metal spiral
Thick analog metal spiral
Dual-metal spiral parallel
stacked
Resistors
p+ diffusion
n+ diffusion
p+ polysilicon
p- polysilicon
Tantalum nitride on M1
n+ subcollector diffusion
High-breakdown
140
170 V
4.2 V / 9 V
6.6 / 1.75 fF/m2
15 W
45 GHz
73 GHz
0.72 m 0.24 m
Q = 18
G224-7148-00