BeSangInc.

announces3DsuperNANDflashmemory
BeSangInc.,apioneerinthemonolithic3dimensional(3D)integratedcircuits(IC),announcedtodayits
proprietary3DsuperNANDdevelopment.
Wearepleasedtoannounce3DsuperNANDwhichisexpectedtobethelowestCostperBitinthe
NAND market, said Dr. SangYun Lee, founder and CEO of BeSang Inc. For the first time in the
semiconductor industry, 3D superNAND brings parallel manufacturing process in order to achieve
maximum productivity, where the parallel manufacturing means independent wafer processing of
memoryperipherylogicataffordableoldgenerationtechnologynodeandadvanced3Dmemorycells
ontopoftheperiphery.
Other3DNANDhassequentialmanufacturingprocesstobuildstackedmemorylayers,staircasebitline
contacts,andperipherylogic.Ittakesusuallymorethan10weekstocompletemanufacturingprocess.
However,3DsuperNANDtakesonly5daystocompleteadvanced3Dnonvolatilememorycellsthanks
to parallel manufacturing, said Dr. Yohwan Koh, former senior vice president and head of NAND
businessatSKhynix,andrecentlyjoinedadvisoratBeSangInc.
Comparedto48layer3DNAND,BeSangexpectsits1layer3DsuperNANDtohave5to10timesbetter
CostperBit.BeSangplanstobring3DsuperNANDtothemarketalongwithindustrypartnersin2016.
AboutBeSangInc.
BeSangisapioneerinthedesign,development,anddeliveryofunsurpassedthreedimensional(3D)IC
solutions,providingunmatchedprocessanddesigntechnologiesforTRUE3DTMICaswellastechnology
licensestocustomers.BeSangprovideshighvalueintellectualpropertiesrelatedtoitsproprietaryTRUE
3DTMICs.ThefablesssemiconductorcompanyisheadquarteredinBeaverton,Oregon,USA.Additional
informationisavailableatwww.besang.com.

Picture:BeSangsproprietary3DsuperNANDflashmemory