2N5401

Preferred Device

Amplifier Transistors
PNP Silicon
Features

PbFree Packages are Available*

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COLLECTOR
3

MAXIMUM RATINGS
Rating

Symbol

2N5400 2N5401

Unit

Collector Emitter Voltage

VCEO

120

150

Vdc

Collector Base Voltage

VCBO

130

160

Vdc

Emitter Base Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

600

mAdc

Total Device Dissipation

@ TA = 25C
Derate above 25C

PD
625
5.0

mW
mW/C

Total Device Dissipation

@ TC = 25C
Derate above 25C

PD

Operating and Storage Junction

Temperature Range

TJ, Tstg

1.5
12

Watts
mW/C

55 to +150

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

2
BASE
1
EMITTER

TO92
CASE 29
STYLE 1
12

MARKING DIAGRAM

2N54xx

THERMAL CHARACTERISTICS
Characteristic

YWW
Symbol

Max

Unit

Thermal Resistance,
JunctiontoAmbient

RJA

200

C/W

Thermal Resistance,
JunctiontoCase

RJC

83.3

C/W

Y
WW

= Year
= Work Week

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our PbFree strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.

Semiconductor Components Industries, LLC, 2004

May, 2004 Rev. 1

Publication Order Number:

2N5401/D

2N5401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Max

150

160

5.0

50
50

50

50
60
50

240

0.2
0.5

1.0
1.0

100

300

6.0

40

200

8.0

Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)

V(BR)CEO
2N5400
2N5401

CollectorBase Breakdown Voltage

(IC = 100 Adc, IE = 0)

Vdc

V(BR)CBO
2N5400
2N5401

EmitterBase Breakdown Voltage

(IE = 10 Adc, IC = 0)

V(BR)EBO

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100C)

Vdc

Vdc

ICBO
2N5401
2N5401

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

nAdc

ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)

hFE

CollectorEmitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

BaseEmitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

Vdc

Vdc

SMALLSIGNAL CHARACTERISTICS
fT

CurrentGain Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

MHz

Cobo

SmallSignal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

Noise Figure
(IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k
, f = 1.0 kHz)

NF

pF

dB

1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

ORDERING INFORMATION
Package

Shipping

2N5401

TO92

5000 Unit / Bulk

2N5401RL1

TO92

2000 Tape & Reel

2N5401RLRA

TO92

2000 Tape & Reel

TO92
(PbFree)

2000 Tape & Reel

2N5401RLRM

TO92

2000 Tape & Ammo Box

2N5401ZL1

TO92

2000 Tape & Ammo Box

Device

2N5401RLRAG

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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2

2N5401
200
150
h FE, CURRENT GAIN

TJ = 125C
100
25C

70
50

55 C
VCE = 1.0 V
VCE = 5.0 V

30
20

0.1

0.2

0.3

0.5

1.0

2.0
3.0
5.0
IC, COLLECTOR CURRENT (mA)

10

20

30

50

100

10

20

50

1.0
0.9
0.8
0.7
0.6

IC = 1.0 mA

0.5

10 mA

30 mA

100 mA

0.4
0.3
0.2
0.1
0
0.005

0.01

0.02

0.05

0.1

0.2

0.5
1.0
IB, BASE CURRENT (mA)

2.0

5.0

Figure 2. Collector Saturation Region

103
IC, COLLECTOR CURRENT (A)

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

102

VCE = 30 V
IC = ICES

101
TJ = 125C
100
75C

101
102

REVERSE
25C

103
0.3

0.2

FORWARD

0.1
0
0.1
0.2 0.3 0.4
0.5
VBE, BASEEMITTER VOLTAGE (VOLTS)

Figure 3. Collector CutOff Region

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3

0.6

0.7

2N5401
1.0
0.9

V, TEMPERATURE COEFFICIENT (mV/ C)

TJ = 25C

V, VOLTAGE (VOLTS)

0.8
0.7
VBE(sat) @ IC/IB = 10

0.6
0.5
0.4
0.3
0.2

VCE(sat) @ IC/IB = 10

0.1
0
0.1

0.2 0.3 0.5

1.0 2.0 3.0 5.0

10
20 30
IC, COLLECTOR CURRENT (mA)

50

2.5
1.5
1.0
0.5

VC for VCE(sat)

0
0.5
1.0
1.5

VB for VBE(sat)

2.0
2.5
0.1

100

TJ = 55C to 135C

2.0

0.2 0.3 0.5 1.0 2.0 3.0 5.0

10
20 30
IC, COLLECTOR CURRENT (mA)

Figure 4. On Voltages

100
70
50
C, CAPACITANCE (pF)

VCC
30 V

10.2 V
100
10 s
INPUT PULSE
tr, tf 10 ns
DUTY CYCLE = 1.0%

0.25 F

3.0 k

RC
Vout

RB
5.1 k

Vin

100

TJ = 25C

30
Cibo

20
10
7.0
5.0

Cobo

3.0

1N914

2.0
1.0
0.2

Values Shown are for IC @ 10 mA

0.3

2.0 3.0
5.0 7.0
0.5 0.7 1.0
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit

1000
700
500

10

20

Figure 7. Capacitances

2000
IC/IB = 10
TJ = 25C

tr @ VCC = 120 V

300

1000
700
500

tr @ VCC = 30 V

200

t, TIME (ns)

t, TIME (ns)

100

Figure 5. Temperature Coefficients

VBB
+
8.8 V
Vin

50

100
70
50

10
0.2 0.3 0.5

td @ VBE(off) = 1.0 V
VCC = 120 V
1.0

2.0 3.0 5.0

10

20 30

tf @ VCC = 120 V

tf @ VCC = 30 V

200

ts @ VCC = 120 V

100
70
50

30
20

300

IC/IB = 10
TJ = 25C

30
50

100

20
0.2 0.3 0.5

200

1.0

2.0 3.0 5.0

10

20 30

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 8. TurnOn Time

Figure 9. TurnOff Time

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4

50

100

200

2N5401
PACKAGE DIMENSIONS

TO92
CASE 2911
ISSUE AL
A

R
P

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

L
SEATING
PLANE

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

X X
G

H
V

C
SECTION XX

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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5

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

2N5401

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under
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For additional information, please contact your
local Sales Representative.

2N5401/D