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Problems

II Sample Problems
Chapter 1 Problems
Problem 1-1.

Problem 1-2.

Problem 1-3.

Problem 1-4.

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Chapter 2 Problems
Problem 2-1. Why do you think that although III-V and II-VI materials are often suitable as
semiconductors I-VII materials are not?
Problem 2-2. The measured values for the lattice constants of group IV materials are:
C = 0.357nm, Si = 0.543nm, Ge = ? nm, Sn = 0.649nm
a) Using the bandgap data given for these materials in Figure 2.12, estimate the lattice constant for Ge.
b) Is the relationship between spacing and bandgap what you expected? Expain.

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Chapter 3 Problems

Chapter 4 Problems

(atoms/cm2),

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Chapter 5 Problems

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Chapter 6 Problems

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Chapter 7 Problems

Chapter 8 Problems

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Chapter 9 Problems

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Chapter 10 Problems

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Chapter 11 Problems

Chapter 12 Problems

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Chapter 13 Problems

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Chapter 14 Problems

Chapter 15 Problems

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Chapter 16 Problems

Chapter 17 Problems

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Chapter 18 Problems

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Chapter 19 Problems

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Chapter 20 Problems

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Chapter 21 Problems

Chapter 22 Problems

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Chapter 23 Problems

Chapter 24 Problems

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Chapter 25 Problems

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Chapter 26 Problems

Chapter 27 Problems

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Problems

Chapter 28 Problems

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III Solutions to Sample Problems

Chapter 1 Solutions
Solution 1-1.

Solution 1-2.

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Solutions

Solution 1-4.

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Chapter 2 Solutions
Solution 2-1. This solution requies a discussion of the type of bonding that occurs between group I and
group VII versus the other types.
Solution 2-2.
a) The lattice constant for Ge = 0.565nm (requires functional fitting and interpolation).
b) The fitted value should be close to the actual value and lie between the lattice constants for Si and
Sn.

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Chapter 3 Solutions

Chapter 4 Solutions

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Chapter 5 Solutions

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Solutions

Chapter 6 Solutions

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Chapter 7 Solutions

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Solutions

Chapter 8 Solutions

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Chapter 9 Solutions

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Solutions

Chapter 10 Solutions

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Solutions

Chapter 11 Solutions

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Solutions

Chapter 12 Solutions

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Chapter 13 Solutions

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Chapter 14 Solutions

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Chapter 15 Solutions

Chapter 16 Solutions

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Chapter 17 Solutions

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Solutions

Chapter 18 Solutions

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Chapter 19 Solutions

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Chapter 20 Solutions

Chapter 21 Solutions

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Chapter 22 Solutions

Chapter 23 Solutions

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Chapter 24 Solutions

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Chapter 25 Solutions

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Chapter 26 Solutions

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Chapter 27 Solutions

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Chapter 28 Solutions

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IV Physical Constants and Material Properties

Quantity

Symbol

Angstrom Unit
Boltzmanns Constant

Electronic Charge
Electron Volt
Electron Rest Mass
Free Space Permittivity
Planks Constant

q
eV
mo
o
h

Thermal Voltage at 300K

kT/q

Value
10-8 cm = 10-10 m
8.62x10-5 eV/K
1.381x10-23 J/K
1.602x10-19 C
1.602x10-19 J
9.11x10-31 kg
8.854x10-14 F/cm
6.626x10-34 J-s
4.14x10-15 eV-s
0.0259 V

Properties of Silicon at 300K

Quantity
Intrinsic Carrier Concentration
Effective Densities of States
Electron Affinity
Energy Gap
Bulk Electron Mobility
Bulk Hole Mobility
Surface Electron Mobility
Permittivity

Symbol
ni
Nv
Nc
Si
Eg
n
p
Si

Value
1.45x1010 cm-3
1.08x1019 cm-3
2.8x1019 cm-3
4.05 eV
1.08 eV
1350 cm2/V-s
470 cm2/V-s
520 cm2/V-s
11.7o

Properties of Silicon Dioxide

Quantity
Permittivity

Symbol

Value

ox

3.9o

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V Laboratory Instructions
Lab Tutorial - HP4145 Parameter Analyzer
Experiment 1 - PN Junction Diode Parameter Extraction
Experiment 2 - Current Flow in the BJT
Experiment 3 - MOSFET Drain Current Modelling

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