Features

0.185(4.70)
0.175(4.44)

0.412(10.5)
MAX

0.055(1.40)
0.045(1.14)

0.154(3.91)
0.148(3.74)

Low power loss, high efficiency.

High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guarding for over voltage protection.

0.113(2.87)
0.27(6.86)

0.103(2.62)

0.23(5.84)

0.594(15.1)
0.587(14.9)

TO-220AB
1

0.16(4.06)
0.14(3.56)

0.11(2.79)
0.10(2.54)

PIN 1
PIN 3

0.56(14.22)

CASE
PIN 2

0.53(13.46)

0.037(0.94)
0.027(0.68)
0.025(0.64)

15 Ampere Schottky Barrier Rectifiers

0.105(2.67)

0.014(0.35)

0.095(2.41)

Dimensions are in: inches (mm)

Absolute Maximum Ratings*

Symbol
IO

TA = 25C unless otherwise noted

Parameter

Value

Units

15

15

150

41.7
333
60

W
mW/C
C/W

RJA

Average Rectified Current

.375 " lead length @ TA = 105C
Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 105C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25C
Thermal Resistance, Junction to Ambient

RJL

Thermal Resistance, Junction to Lead

3.0

C/W

Tstg

Storage Temperature Range

-65 to +175

TJ

Operating Junction Temperature

-65 to +150

if(repetitive)
if(surge)
PD

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

TA = 25C unless otherwise noted

Parameter

Device
1535

1545

Units
1550

1560

Peak Repetitive Reverse Voltage

35

45

50

60

Maximum RMS Voltage

24

31

35

42

35

45

50

60

DC Reverse Voltage

(Rated VR)

Voltage Rate of Change (Rated V R)

Maximum Reverse Current
TA = 25C
@ rated VR
TA = 125C
Maximum Forward Voltage
I F = 7.5 A, TC = 25C
I F = 7.5 A, TC = 125C
I F = 15 A, TC = 25C
I F = 15 A, TC = 125C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
1999 Fairchild Semiconductor Corporation

10,000

V
V/uS

0.1
15

1.0
50

mA
mA

0.57
0.84
0.72

0.75
0.65
-

V
V
V
V

1.0

0.5

MBR1535CT - MBR1560CT, Rev. A

MBR1535CT- MBR1560CT

MBR1535CT - MBR1560CT

(continued)

Typical Characteristics

Non-Repetitive Surge Current

FORWARD CURRENT (A)

20

15
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
LENGTHS

10

25

50
75
100
125
150
AMBIENT TEMPERATURE ( C)

175

PEAK FORWARD SURGE CURRENT (A)

Forward Current Derating Curve

25

200

150

100

50

Forward Characteristics

T A = 125 C

REVERSE CURRENT ( A)

T A = 125 C

10

TA = 25 C
MBR1535CT-MBR1545CT

MBR1550CT-MBR1560CT

0.1

0.2

0.4
0.6
0.8
FORWARD VOLTAGE (V)

Typical Junction Capacitance

MBR1535CT-MBR1545CT

MBR1550CT-MBR1560CT

100

10
0.1

1
10
REVERSE VOLTAGE (V)

MBR1535CT-MBR1545CT

1
MBR1550CT-MBR1560CT

0.1

0.01

TA = 75 C

TA = 25 C
MBR1535CT-MBR1545CT

0.001

1.2

5000

1000

10

MBR1550CT-MBR1560CT

100

0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

TRANSIENT THERMAL IMPEDANCE ( C/W)

FORWARD CURRENT (A)

100

50

Pulse Width = 300S

2% Duty Cycle

JUNCTION CAPACITANCE (pF)

5
10
20
50
NUMBER OF CYCLES AT 60Hz

Reverse Characteristics

50

0.01

Transient Thermal Impedance

100

10

0.1
0.01

0.1
1
10
T. PULSE DURATION (sec.)

100

MBR1535CT - MBR1560CT, Rev. A

MBR1535CT- MBR1560CT

Schotty Barrier Rectifier

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

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First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

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This datasheet contains final specifications. Fairchild

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The datasheet is printed for reference information only.