Beruflich Dokumente
Kultur Dokumente
Shiv
Nadar
University
Shiv
Nadar
University
Here, is an empirical
model parameter, and is
called the channel length
modulationm coefficient.
Outline
Shiv
Nadar
University
MOS Structure
Gate and body form
MOS capacitor
Operating modes
Accumulation
Depletion
Inversion
gs
gd
ds
No channel
Ids = 0
Shiv
Nadar
University
10
11
Vds
I ds Vgs Vt
2
Vgs Vt
Vgs Vt
V V V
ds
ds
dsat
Vds Vdsat
cutoff
linear
saturation
12
13
Example
0.6 mm process from AMI Semiconductor
2.5
Vgs = 5
2
Ids (mA)
tox = 100
m = 350 cm2/V*s
Vt = 0.7 V
1.5
Vgs = 4
1
Vgs = 3
0.5
0
Vgs = 2
Vgs = 1
Vds
120
m A /V 2
14
MOS CAPACITANCE
16
17
18
oxide-related capacitances
--- Overlap Capacitance
--- Gate to Channel Capacitance
junction capacitances
19
Overlap Capacitance
20
In Cut-off mode:
surface is not inverted. Consequently, there is no conducting
channel that links the surface to the source and to the drain.
Therefore, the gate-to-source and the gate-to-drain capacitances
are both equal to zero:
21
Linear Mode
Channel extends across the MOSFET, between the
source and the drain.
Saturation Mode
When the MOSFET is operating in
saturation mode, the inversion layer on the
surface does not extend to the drain,
Cgd = 0
23
Total Capacitance
24
Diffusion Capacitance
Csb, Cdb
Undesired capacitance (parasitic)
Due to the reverse biased p-n
junctions between source diffusion
and body and drain diffusion and body
Capacitance depends on area and
perimeter
25
26
Shiv
Nadar
University
Shiv
Nadar
University
28