Preliminary Technical Information

IXGK120N120A3
IXGX120N120A3

GenX3TM A3-Class
IGBTs

VCES = 1200V
IC110 = 120A
VCE(sat) 2.20V

Ultra-Low Vsat PT IGBTs for

up to 3kHz Switching

TO-264 (IXGK)

Symbol

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

1200

VCGR

TJ = 25C to 150C, RGE = 1M

1200

VGES

Continuous

20

VGEM

Transient

30

IC25
IC110
ILRMS
ICM

TC = 25C ( Chip Capability )

TC = 110C
Terminal Current Limit
TC = 25C, 1ms

240
120
75
600

A
A
A
A

SSOA
(RBSOA)

VGE = 15V, TVJ = 125C, RG = 1

Clamped Inductive Load

ICM = 240
@ 0.8 VCES

PC

TC = 25C

830

-55 ... +150

TJ
TJM

150

Tstg

-55 ... +150

300
260

C
C

1.13/10
20..120/4.5..27

Nm/lb.in.
N/lb.

10
6

g
g

TL
TSOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

Md
FC

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

Weight

TO-264
PLUS247

E
E

(TAB)

PLUS 247TM (IXGX)

G = Gate
C = Collector

(TAB)

E
= Emitter
TAB = Collector

Features
z
z
z
z

Optimized for Low Conduction Losses

Square RBSOA
High Avalanche Capability
International Standard Packages

Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)

Characteristic Values
Min.
Typ.
Max.

BVCES

IC

= 250A, VCE = 0V

1200

VGE(th)

IC

= 1mA, VCE = VGE

ICES

VCE = VCES, VGE = 0V

VCE = 0V, VGE = 20V

VCE(sat)

IC

3.0

= 100A, VGE = 15V, Note 1

5.0

50 A
3 mA
400 nA
1.85

2.20

Applications
z
z
z
z
z
z
z
z
z

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High Power Density

Low Gate Drive Requirement

TJ = 125C
IGES

Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits

DS99977(02/09)

IXGK120N120A3
IXGX120N120A3
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs

Characteristic Values
Min.
Typ.
Max.

IC = 60A, VCE = 10V, Note 1

45

Cies
Coes

73

TO-264 (IXGK) Outline

S

9900

pF

655

pF

VCE = 25V, VGE = 0V, f = 1 MHz

Cres

240

pF

Qg(on)

420

nC

Qge

70

nC

Qgc

180

nC

td(on)

40

ns

tri
Eon
td(off)
tfi
Eoff

IC = IC110, VGE = 15V, VCE = 0.5 VCES

Inductive load, TJ = 25C

IC

= 100A, VGE = 15V

VCE = 960V, RG = 1
Note 2

td(on)
tri
Eon
td(off)
tfi

67

ns

10

mJ

490

ns

325

ns

33

mJ

30

ns

Inductive load, TJ = 125C

75

ns

IC = 100A, VGE = 15V

15

mJ

685

ns

680

ns

58

mJ

VCE = 960V, RG = 1
Note 2

Eoff

0.15 C/W

RthJC
RthCK

0.15

C/W
PLUS 247TM (IXGX) Outline

Note 1: Pulse Test, t 300s, Duty Cycle, d 2%.

2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES,
Higher TJ or Increased RG.

Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)

Dim.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.

A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R

Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83

Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

Downloaded from Elcodis.com electronic components distributor

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGK120N120A3
IXGX120N120A3
Fig. 1. Output Characteristics
@ 25C

Fig. 2. Extended Output Characteristics

@ 25C

240

360
VGE = 15V
13V
11V

220
200

280

180
9V

160

IC - Amperes

IC - Amperes

VGE = 15V
13V
11V

320

140
120
100
7V

80

240
9V
200
160
7V

120

60

80

40
40

20
0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VCE - Volts

Fig. 3. Output Characteristics

@ 125C

Fig. 4. Dependence of VCE(sat) on

Junction Temperature

200

10

1.6

VGE = 15V
13V
11V

220

VGE = 15V

1.5

1.4

VCE(sat) - Normalized

180
160
9V

140
120
100

7V

80
60

= 240A

1.3
1.2
1.1

= 120A

= 60A

1.0
0.9
0.8

40

0.7

5V

20
0

0.6
0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-50

-25

VCE - Volts

25

50

75

100

125

150

7.5

8.0

TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

Fig. 6. Input Admittance

200

6.0
5.5

180

TJ = 25C

5.0

160

4.5

140

IC - Amperes

VCE - Volts

VCE - Volts

240

IC - Amperes

5V

4.0
I

3.5

= 240A

3.0

100
TJ = 125C
25C
- 40C

80
60

120A

2.5

120

40

2.0
1.5

20

60A

1.0

0
6

10

11

12

VGE - Volts

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13

14

15

4.0

4.5

5.0

5.5

6.0

VGE - Volts

6.5

7.0

IXGK120N120A3
IXGX120N120A3
Fig. 7. Transconductance

Fig. 8. Gate Charge

120

16

TJ = - 40C

110

90
80
70

I C = 120A
I G = 10mA

12

25C

VGE - Volts

g f s - Siemens

VCE = 600V

14

100

125C

60
50

10
8
6

40
30

20

10
0

0
0

20

40

60

80

100

120

140

160

180

200

50

100

150

IC - Amperes

200

250

300

350

400

450

QG - NanoCoulombs

Fig. 9. Capacitance

Fig. 10. Reverse-Bias Safe Operating Area

280

100,000

f = 1MHz

Cies

200

10,000

IC - Amperes

Capacitance - PicoFarads

240

Coes

1,000

160
120
80
40

TJ = 125C
RG = 1
dV / dt < 10V / ns

Cres
100
0

10

15

20

25

30

35

0
200

40

300

400

500

600

VCE - Volts

700

800

900

1000 1100 1200

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

Z(th)JC - C / W

1.000

0.100

0.010

0.001
0.00001

0.0001

0.001

0.01

0.1

10

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_120N120A3(9P)2-19-09

Downloaded from Elcodis.com electronic components distributor

Fig. 12. Inductive Switching

Energy Loss vs. Gate Resistance

Fig. 13. Inductive Switching

Energy Loss vs. Collector Current

90

90

36
Eon -

Eoff

80

---

32

TJ = 125C , VGE = 15V

VCE = 960V

= 100A

20

VCE = 960V

60

30

12

20

10

12
10

30

TJ = 125C

40

16

10

14

50

40

I C = 50A

16

20

6
TJ = 25C

50

10

55

60

65

70

RG - Ohms

90

I C = 100A

14

50

12

40

10

30

20

I C = 50A

10
0
45

55

65

75

85

95

105

115

VCE = 960V

700

1100

650

1000
I

600

450

2
125

400

800
I

900

1100

800

500
2

TJ = 25C

100

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10

90

95

1150

tf

1050

VCE = 960V

700

t f - Nanoseconds

td(off) - - - -

RG = 1 , VGE = 15V

950

600

850
I C = 50A, 100A

550

400

200

450

300
100

100

500

IC - Amperes

300

300

85

650

600

80

400

400

75

750

700

70

500

500

65

700

= 50A

600

1200

800

TJ = 125C

60

Fig. 17. Inductive Turn-off

Switching Times vs. Junction Temperature

900

55

900

25

35

45

55

65

75

85

95

TJ - Degrees Centigrade

105

115

350
125

t d(off) - Nanoseconds

700

50

= 100A

550

1000

VCE = 960V

200

1300

= 50A

1200

500

t d(off) - Nanoseconds

t f - Nanoseconds

td(off) - - - -

RG = 1 , VGE = 15V

600

RG - Ohms

1000

800

1400

750

Fig. 16. Inductive Turn-off

Switching Times vs. Collector Current
tf

2
100

td(off) - - - -

TJ - Degrees Centigrade

900

95

TJ = 125C, VGE = 15V

800

16

60

35

90

t d(off) - Nanoseconds

VCE = 960V

25

85

1500

tf

850

18

Eon - MilliJoules

Eoff - MilliJoules

----

RG = 1 , VGE = 15V

70

80

900

t f - Nanoseconds

80

75

Fig. 15. Inductive Turn-off

Switching Times vs. Gate Resistance
20

Eon

IC - Amperes

Fig. 14. Inductive Switching

Energy Loss vs. Junction Temperature
Eoff

- MilliJoules

50

70

18

RG = 1 , VGE = 15V

on

24

80

----

Eon

60

Eoff - MilliJoules

28

Eon - MilliJoules

Eoff - MilliJoules

70

20
Eoff

IXGK120N120A3
IXGX120N120A3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current

Fig. 18. Inductive Turn-on

Switching Times vs. Gate Resistance
160

110

90

tr

140

td(on) - - - -

70

= 100A

100

60

80

50

60

40
I

40

= 50A

30

20
0
1

90

t r - Nanoseconds

t r - Nanoseconds

td(on) - - - -

55

RG = 1 , VGE = 15V

50

VCE = 960V

80

45
TJ = 125C, 25C

70

40

60

35

50

30

40

25

20

30

20

10

20
50

10

RG - Ohms

55

60

65

70

75

80

85

90

95

t d(on) - Nanoseconds

t d(on) - Nanoseconds

VCE = 960V

tr

100

80

TJ = 125C, VGE = 15V

120

60

15
100

IC - Amperes

Fig. 20. Inductive Turn-on

Switching Times vs. Junction Temperature
100

54

tr

90

50

RG = 1 , VGE = 15V
VCE = 960V

46

70

42
I C = 100A

60

38

50

34

40

30
I

30

= 50A

26

20
25

35

45

55

t d(on) - Nanoseconds

80

t r - Nanoseconds

td(on) - - - -

65

75

85

95

105

115

22
125

TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_120N120A3(9P)2-19-09

Downloaded from Elcodis.com electronic components distributor