DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3793

SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

The 2SK3793 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

PACKAGE

2SK3793

Isolated TO-220

FEATURES
Super low on-state resistance

(Isolated TO-220)

RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A)

RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 6 A)
Low C iss: C iss = 900 pF TYP.
Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V)

VDSS

100

Gate to Source Voltage (VDS = 0 V)

VGSS

20

Drain Current (DC) (TC = 25C)

ID(DC)

12

ID(pulse)

22

Total Power Dissipation (TC = 25C)

PT1

20

Total Power Dissipation (TA = 25C)

PT2

2.0

Channel Temperature

Tch

150

Drain Current (pulse)

Note1

Tstg

55 to +150

Single Avalanche Current

Note2

IAS

10

Single Avalanche Energy

Note2

EAS

10

mJ

Storage Temperature

Notes 1. PW 10 s, Duty Cycle 1%

2. Starting Tch = 25C, VDD = 50 V, RG = 25 , VGS = 20 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16777EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan

2004

2SK3793
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

10

Gate Leakage Current

IGSS

VGS = 20 V, VDS = 0 V

10

VGS(off)

VDS = 10 V, ID = 1 mA

1.5

2.0

2.5

| yfs |

VDS = 10 V, ID = 6 A

5.0

10.3

RDS(on)1

VGS = 10 V, ID = 6 A

89

125

RDS(on)2

VGS = 4.5 V, ID = 6 A

96

148

Gate Cut-off Voltage

Forward Transfer Admittance

Note

Drain to Source On-state Resistance

Note

Input Capacitance

Ciss

VDS = 10 V

900

pF

Output Capacitance

Coss

VGS = 0 V

110

pF

Reverse Transfer Capacitance

Crss

f = 1 MHz

50

pF

Turn-on Delay Time

td(on)

VDD = 50 V, ID = 6 A

ns

VGS = 10 V

ns

RG = 0

30

ns

ns

Rise Time

tr

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

VDD = 80 V

21

nC

Gate to Source Charge

QGS

VGS = 10 V

3.0

nC

QGD

ID = 12 A

6.2

nC

VF(S-D)

IF = 12 A, VGS = 0 V

0.89

Reverse Recovery Time

trr

IF = 12 A, VGS = 0 V

52

ns

Reverse Recovery Charge

Qrr

di/dt = 100 A/s

94

nC

Gate to Drain Charge

Body Diode Forward Voltage

Note

1.5

Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25

D.U.T.
L

50

PG.
VGS = 20 0 V

TEST CIRCUIT 2 SWITCHING TIME

RL
RG

PG.

VDD

VGS
VGS
Wave Form

VGS

10%

90%

VDD
VDS
90%

IAS

VDS

ID

VDS

= 1 s
Duty Cycle 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA
PG.

50

10%

10%

tr

td(off)

Wave Form

VDD

Starting Tch

90%

VDS

VGS
0

BVDSS

RL
VDD

Data Sheet D16777EJ1V0DS

td(on)
ton

tf
toff

2SK3793
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

120

25

PT - Total Power Dissipation - W

dT - Percentage of Rated Power - %

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

100
80
60
40
20

20
15
10
5

0
0

25

50

75

100

125

150

175

25

TC - Case Temperature - C

50

75

100

125

150

175

TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA

100
PW = 100 s

10

ID(DC)
1 ms

1
Power Dissipation Limited
10 ms

0.1
TC = 25C
ingle pulse

0.01
0.1

10

100

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000

rth(t) - Transient Thermal Resistance - C/W

ID - Drain Current - A

ID(pulse)
RDS(on) Limited
(at VGS = 10 V)

Rth(ch-A) = 62.5C/W

100

10
Rth(ch-C) = 6.25C/W
1

0.1
Single pulse
0.01
100

1m

10 m

100 m

10

100

1000

PW - Pulse Width - s

Data Sheet D16777EJ1V0DS

2SK3793

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

25

100

20

VGS = 10 V

15

4.5 V

10
5

TA = 150C
75C
25C
55C

10

ID - Drain Current - A

ID - Drain Current - A

Pulsed

1
0.1
0.01

VDS = 10 V
Pulsed

0.001
0

VDS - Drain to Source Voltage - V

1.5
1
0.5

RDS(on) - Drain to Source On-state Resistance - m

50

100

150

| yfs | - Forward Transfer Admittance - S

200

100

10

0.1
VDS = 10 V
Pulsed
0.01
0.01

0.1

10

100

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

200

Pulsed

150

VGS = 4.5 V

100

10 V
50

0
0.1

10

100

200

Pulsed

150
ID = 12 A
100

ID - Drain Current - A

TA = 55C
25C
75C
150C

Tch - Channel Temperature - C

RDS(on) - Drain to Source On-state Resistance - m

VGS(off) - Gate Cut-off Voltage - V

VDS = 10 V
ID = 1 mA

-50

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

0
-100

VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

2.5

6A

50

0
0

10

15

VGS - Gate to Source Voltage - V

Data Sheet D16777EJ1V0DS

20

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

250

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

10000

Pulsed
Ciss, Coss, Crss - Capacitance - pF

200
150

V GS = 4.5 V
10 V

100
50

VGS = 0 V
f = 1 MHz
1000

100
Coss
Crss

0
-100

-50

50

100

150

10
0.001

200

Tch - Channel Temperature - C

VDD = 50 V
VGS = 10 V
RG = 0
td(off)

10

10

1000

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

td(on)
tr
tf

120

VDS - Drain to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

100

0.1

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

12

ID = 12 A

100

10
VDD = 80 V
50 V
20 V

80

60

40

VGS

20

VDS

1
0.1

10

0
0

100

10

15

20

25

QG - Gate Charge - nC

ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT
1000

Pulsed
VGS = 10 V

10

4.5 V
1

0V

0.1

trr - Reverse Recovery Time - ns

100

IF - Diode Forward Current - A

Ciss

VGS = 0 V
di/dt =100 A/s
100

0.01

10

1
0

0.5

1.5

0.1

10

100

IF - Diode Forward Current - A

VF(S-D) - Source to Drain Voltage - V

Data Sheet D16777EJ1V0DS

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - m

2SK3793

2SK3793

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

SINGLE AVALANCHE ENERGY

DERATING FACTOR

10

100

Energy Derating Factor - %

IAS - Single Avalanche Current - A

100

IAS = 10 A

EAS = 10 mJ
1

VDD = 50 V
RG = 25
VGS = 200 V
Starting Tch = 25C

60
40
20

0.1
1

0
10

100

1m

10 m

25

50

75

100

125

150

Starting Tch - Starting Channel Temperature - C

L - Inductive Load - H

VDD = 50 V
RG = 25
VGS = 200 V
IAS 10 A

80

Data Sheet D16777EJ1V0DS

2SK3793
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
4.5 0.2

3 0.1
4 0.2

0.7 0.1

1.3 0.2
1.5 0.2
2.54

2.54

2.7 0.2

12.0 0.2

3.2 0.2

13.5 MIN.

15.0 0.3

10.0 0.3

2.5 0.1
0.65 0.1

1. Gate
2. Drain
3. Source
1 2 3

EQUIVALENT CIRCUIT
Drain

Body
Diode

Gate

Gate
Protection
Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.

Data Sheet D16777EJ1V0DS

2SK3793

The information in this document is current as of March, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1

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