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Tuesday,October28,2014

GATEQuestionson"PNJunction(Diode)"(1987toTill
Date)

1987

1.ThediffusioncapacitanceofaPNjunction
a.Decreaseswithincreasingcurrentandincreasingtemperature
b.Decreaseswithdecreasingcurrentandincreasingtemperature
c.Increaseswithincreasingcurrentandincreasingtemperature
d.Doesnotdependoncurrentandtemperature
Answer:B
Solution:https://www.youtube.com/watch?v=YgQjfNh4JiU

1988
1.ForaPNjunction,Matchthetypeofbreakdownwithphenomenon
i.Avalanchebreakdown
ii.Zenerbreakdown
iii.Punchthrough
a.Collisionofcarrierswithcrystalions
b.Earlyeffect
c.Ruptureofcovalentbondduetostrongelectricfield
Answer:ia,iic,iiib
Solution:https://www.youtube.com/watch?v=EN4l13yKuqM
2.Inthecircuitshownbelow,thecurrentvoltagerelationshipwhenD1andD2are
identicalisgivenby(assumeGermaniumdiodes)

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Answer:B
Solution:https://www.youtube.com/watch?v=TKrqrKu90i8

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1989

1.TheswitchingspeedofP+Njunctiondependsprimarilyon
a.themobilityofminoritycarriersintheP+region
b.thelifetimeofminoritycarriersintheP+region
c.themobilityofmajoritycarriersintheNregion
d.thelifetimeofmajoritycarriersintheNregion

59%

Answer:B
Solution:https://www.youtube.com/watch?v=vPptctf8wSU

1990
1.InauniformlydopedabruptPNjunction,thedopingleveloftheNsideisfourtimesthe
dopinglevelofthePside.Thentheratioofthedepletionlayerwidthsis......

Viewnow

59%

Answer:Wn/Wp=1/4
Solution:http://www.youtube.com/watch?v=ddZ7Kuje6E8
2.Inajunctiondiode,
a.thedepletioncapacitanceincreaseswithincreaseinthereversebias
b.thedepletioncapacitanceincreaseswithdecreaseinthereversebias
c.thediffusioncapacitanceincreaseswithincreaseintheforwardbias
d.Thediffusioncapacitanceismuchhigherthanthedepletioncapacitance,whenit
isforwardbiased.
Answer:B,C,D
Solution:https://www.youtube.com/watch?v=2Vmo8zKg4vY

3.(a)Twoidealandidenticaljunctiondiodes(withidealityfactor=1)connectedinseries
asshownbelow.
Viewnow

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Showthatexp(eV1/KT)+exp(eV2/KT)=2,whereV1andV2arethevoltagedropacrossthe
diodesD1andD2.
(b)AssumingthatthecurrentflowingthroughthereversebiaseddiodeissaturatedatICO,
calculatethevoltagedropacrosstheforwardbiaseddiode.AssumeKT=26meV.
Answer:(b)0.018volts
Solution:https://www.youtube.com/watch?v=qz6ZD9Y5nUo

1991
1.ThesmallsignalcapacitanceofanabruptP+Njunctionis1nF/cm2atzerobias.Ifthe
builtinvoltageis1volt,thecapacitanceatareversebiasvoltageof99voltsisequalto.
Answer:0.1nF/cm2
Solution:https://www.youtube.com/watch?v=OLLdXgXytOE
2.Referringtothecircuitshown,theswitchisinposition1initiallyandsteadystate
conditionsexistfromtimet=0tot=t0.Theswitchissuddenlythrownintoposition2.The
currentIflowingthroughthe10Kresistorasfunctionoftimefromt=0is.(Givethe
sketchshowingthemagnitudesofthecurrentatt=0,t=t0andt=)

GATE1988ECEAnalogCircuits(Analog
Electronics)...
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Electronics)...
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Electronics)...
GATE1992ECEAnalogCircuits(Analog
Electronics)...
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Electronics)...
GATE1994ECEAnalogCircuits(Analog
Electronics)...
GATE1995ECEAnalogCircuits(Analog
Electronics)...
GATE1996ECEAnalogCircuits(Analog
Electronics)...

Answer:

GATEPraticeQuestionson"DigitalCircuits1"

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GATEpracticeProblemsonPNjunction(Diode)
Set...
September(7)
August(8)
July(5)
June(6)

Solution:https://www.youtube.com/watch?v=DXWskHsBxT0

May(20)
April(27)
March(24)

3.Inthefigureshown,theinputViisa100Hztriangularwavehavingapeaktopeak
amplitudeof2voltsandanaveragevalueofzerovolts.Giventhatthediodeisideal,the
averagevalueoftheoutputvoltageVois..

Answer:zerovolts
Solution:https://www.youtube.com/watch?v=Kxx2qeYfk7E

4.ThecurrentinaforwardbiasedP+Njunctionshowninfigure(a)isentirelydueto
diffusionofholesfromx=0tox=L.Theinjectedholeconcentrationdistributioninthen
regionislinearasshowninfigure(b),withP(0)=1022percm3andL=103cm.Determine
a.Thecurrentdensityinthediode,assumingthatthediffusioncoefficientofholesis
12cm2/sec.
b.Thevelocityofholesinthenregionatx=0.

Answer:
Jn=19.2x106A/cm2

n=12x103cm/sec
Solution:https://www.youtube.com/watch?v=fJJ5YtXBBnA

1992
1.APNjunctionwitha100resistorisforwardbiasedsothatacurrentof100mAflows.
Ifthevoltageacrossthiscombinationisinstantaneouslyreversedto10voltsatt=0,the
reversecurrentthatflowsthroughthediodeatt=0isapproximatelygivenby
a.0mA
b.100mA
c.200mA
d.50mA
Answer:B
Solution:https://www.youtube.com/watch?v=0T9hYBSFEaM

1993
1.Inthefigure,theidealmovingironvoltmeterMwillread

Answer:B
Solution:https://www.youtube.com/watch?v=5bK9WaHVqaM

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2.Minthefigureshownisarectifiertype200voltsfullscalevoltmeterhavingasensitivity
of10K/volt.WhatwillbethereadinginMifthesourcevoltageVSisasymmetricalsquare
waveof800voltspeaktopeak?

Answer:
Solution:
3.Thebuiltinpotential(Diffusionpotential)inaPNjunction
a.IsequaltothedifferenceintheFermilevelofthetwosides,expressedinvolts
b.Increaseswiththeincreaseinthedopinglevelsofthetwosides
c.Increaseswiththeincreaseintemperature
d.IsequaltotheaverageoftheFermilevelsofthetwosides
Answer:A&B
Solution:https://www.youtube.com/watch?v=h9awFNgUo8
4.Considerthecircuitshowninfigure(a).ifthediodeusedherehastheVI
characteristicsasshowninfigure(b),thentheoutputwaveformVois

Answer:D
Solution:https://www.youtube.com/watch?v=B1fq6qREH9A

1994

1.Theforwarddynamicresistanceofajunctiondiodevariesastheforward
current.
Answer:Inversely
Solution:https://www.youtube.com/watch?v=HfjrpzG7j8s

1995

1.ThediffusionpotentialacrossaPNjunction
a.Decreaseswithincreasingdopingconcentration
b.Increaseswithdecreasingbandgap
c.Doesnotdependondopingconcentration
d.Increaseswithincreaseindopingconcentrations
Answer:D
Solution:https://www.youtube.com/watch?v=aoeFCtKOuq8

2.Thedepletioncapacitance,CJ ,ofanabruptPNjunctionwithconstantdopingoneither
sidevarieswithreversebias,VR as

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Answer:C
Solution:https://www.youtube.com/watch?v=H7843qbzIOI

3.Twoidenticalsiliconjunctiondiodes,D1andD2areconnectedbacktobackasshown.
ThereversesaturationcurrentISofeachdiodeis108Ampsandthebreakdownvoltageis50
volts.EvaluatethevoltageVD1andVD2acrossthediodeD1andD2byassumingKT/qtobe
25mV.

Answer:4.98voltsand0.018volts
Solution:https://www.youtube.com/watch?v=ipu6FQW5w0

1996

1.TheptypesubstrateinaconventionalPNjunctionisolatedintegratedcircuitshouldbe
connectedto
a.Nowhere,i.e.leftfloating
b.Adcgroundpotential
c.Themostpositivepotentialavailableinthecircuit
d.Themostnegativepotentialavailableinthecircuit
Answer:D
Solution:https://www.youtube.com/watch?v=11c5h0T1g_Y
1997

1.Inthecircuitshown,thecurrentflowingthroughtheidealdiodeequalto

a.0Amp
b.4Amp
c.1Amp
d.Noneoftheabove
Answer:C
Solution:https://www.youtube.com/watch?v=lsgn8Hnz6HE

1998

1.ThestaticcharacteristicofanadequatelyforwardbiasedPNjunctionisastraightline,
iftheplotisof
a.LogIvs.logV
b.LogIvs.V
c.Ivs.logV
d.Ivs.V
Answer:B
Solution:https://www.youtube.com/watch?v=dsHsIn6LSls
1999

2000
1.Forthecircuitinfigureshown,thevoltageVois

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a.2volts
b.1volts
c.1volts
d.Noneoftheabove
Answer:D
Solution:https://www.youtube.com/watch?v=wtNGel7O7ic

2001

1.Forthecircuitshowninfigure,D1andD2areidenticaldiodeswithidealityfactorof
unity.ThethermalvoltageVT=25mV.
a.Ifthereversesaturationcurrent,IS,forthediodeis1pA,thencomputethecurrentI
throughthecircuit.
b.CalculateVf andVr.

Answer:(a)1pA(b)0.018mVand0.032mV
Solution:https://www.youtube.com/watch?v=cK8_pacEAZY
2002
1.Inthefigureshown,asilicondiodeiscarryingaconstantcurrentof1mA.Whenthe
temperatureofthediodeis20oC,diodevoltageisfoundtobe700mV.Ifthetemperaturerises
to40oC,diodevoltagebecomesapproximatelyequalto

a.740mV
b.660mV
c.680mV
d.700mV
Answer:B
Solution:https://www.youtube.com/watch?v=wqUUbrQyCI

2003
1.At300oK,foradiodecurrentof1mA,acertainGermaniumdioderequiresaforward
biasof0.1435volts,whereasacertainSilicondioderequiresaforwardbiasof0.718volts.
Undertheconditionsstatedabove,theclosestapproximationoftheratioofreversesaturation
currentinGetothatofSidiodeis
a.1
b.5
c.4x103
d.8x103
Answer:C
Solutoin:https://www.youtube.com/watch?v=8mEekTAFoYU

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2004
1.InabruptPNjunction,thedopingconcentrationsonthePsideandNsideareNA=9x

1016cm3andND=1x1016cm3respectively.ThePNjunctionisreversebiasedandthetotal
depletionwidthis3m.ThedepletionwidthonthePsideis
a.2.7m
b.0.3m
c.2.25m
d.0.75m
Answer:B
Solution:https://www.youtube.com/watch?v=XyzrofQ1DsI
2.ConsideranabruptPNjunction.LetVbibethebuiltinpotentialofthisjunctionandVR
betheappliedreversebias.Ifthejunctioncapacitance(CJ )is1pFforVbi+VR =1volt,then
forVbi+VR =4volts,thevalueofCJ willbe
a.4pF
b.2pF
c.0.25pF
d.0.75pF
Answer:C
Solution:https://www.youtube.com/watch?v=3jTOs2F7oHA

2005

1.AsiliconPNjunctionatatemperatureof20oChasareversesaturationcurrentof10pA.
Thereversesaturationcurrentat40oCforthesamebiasisapproximately
a.30pA
b.40pA
c.50pA
d.60pA
Answer:B
Solution:https://www.youtube.com/watch?v=is4Hb5QGpHg

2.AsiliconPNjunctiondiodeunderreversebiashasdepletionregionofwidthof10m.
Therelativepermittivityofsilicon( r)is11.7andthepermittivityoffreespace( o)is8.85x
1012F/m.Thedepletioncapacitanceofthediodepersquaremeteris
a.100F
b.10F
c.1F
d.20F

Answer:B
Solution:https://www.youtube.com/watch?v=rxp_jLO9dz0

2006

1.Inthecircuitshownbelow,theswitchwasconnectedtoposition1att<0,andatt=0,
itischangedtoposition2.AssumethatthediodehaszerovoltagedropandastoragetimetS.
For0<t<tS,thevoltageacrossthe1Kresistor(VR )involtsis

Answer:A
Solution:https://www.youtube.com/watch?v=CmgL0dztU
2.Forthecircuitshownbelow,assumethezenerdiodeisidealwithabreakdownvoltageof
6volts.ThewaveformobservedacrossRis

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Answer:B
Solution:https://www.youtube.com/watch?v=wjeTnzvlyrw

2007
1.InaP+Njunctiondiodeunderreversebias,themagnitudeofelectricfieldismaximum
at
a.TheedgeofthedepletionregiononPside
b.TheedgeofthedepletionregiononNside
c.TheP+Njunction
d.ThecentreofthedepletionregionontheNside
Answer:C
Solution:https://www.youtube.com/watch?v=986MG7ote5w
2.Thecorrectfullwaverectifiercircuitis:

Answer:C
Solution:https://www.youtube.com/watch?v=qzbqzCNqYSA
3.AP+Njunctionhasabuiltinpotentialof0.8volts.Thedepletionlayerwidthata
reversebiasof1.2voltsis2m.Forareversebiasof7.2volts,thedepletionlayerwidthwill
be
a.4m
b.4.9m
c.8m
d.12m
Answer:A
Solution:https://www.youtube.com/watch?v=YhbWy1waleM

2008
1.WhichofthefollowingisNOTassociatedwithaPNjunction?
a.Junctioncapacitance
b.Chargestoragecapacitance
c.Depletioncapacitance
d.Channellengthmodulation

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Answer:D
Solution:https://www.youtube.com/watch?v=7kYKPLc5ujM

2.Inthefollowinglimitercircuit,aninputvoltageVi=10sin100tapplied.Assumethat
thediodedropis0.7voltswhenitisforwardbiased.Thezenerbreakdownvoltageis6.8
volts.
Themaximumandminimumvaluesoftheoutputvoltagerespectivelyare

a.6.1volts,0.7volts
b.0.7volts,7.5volts
c.7.5volts,0.7volts
d.7.5volts,7.5volts
Answer:C
Solution:https://www.youtube.com/watch?v=2LAYX1bdh5o

2009

1.Inthecircuitbelow,thediodeisideal.ThevoltageVisgivenby

a.Min(Vi,1)
b.Max(Vi,1)
c.Min(Vi,1)
d.Max(Vi,1)
Answer:D
Solution:https://www.youtube.com/watch?v=yMHePwsPly0

2.CommonDataQuestion:
ConsiderasiliconPNjunctionatroomtemperaturehavingthefollowingparameters:
DopingontheNside=1x1017cm3
DepletionwidthonNside=0.1m
DepletionwidthonthePside=1m
Intrinsiccarrierconcentration=1.4x1010cm3
Thermalvoltage=26mV
Permittivityoffreespace=8.85x1014F/cm
Dielectricconstantofsilicon=12
i.Thebuiltinpotentialofthejunctionis
a.0.70volts
b.0.76volts
c.0.82volts
d.Cannotbeestimatedfromgivendata
Answer:B
ii.Thepeakelectricfieldinthedeviceis
a.0.15Mvolts/cm,directedfromPregiontoNregion
b.0.15Mvolts/cm,directedfromNregiontoPregion
c.1.80Mvolts/cm,directedfromPregiontoNregion
d.1.80Mvolts/cm,directedfromNregiontoPregion
Answer:B
Solution:https://www.youtube.com/watch?v=ZbOv57yZfQg

2010

1.ComparedtoaPNjunctionwithND=NA=1014percm3,whichoneofthefollowing
statementsisTRUEforaPNjunctionwithNA=ND=1020percm3?
a.Reversebreakdownvoltageisloweranddepletioncapacitanceislower
b.Reversebreakdownvoltageishigheranddepletioncapacitanceislower
c.Reversebreakdownvoltageisloweranddepletioncapacitanceishigher
d.Reversebreakdownvoltageishigheranddepletioncapacitanceishigher
Answer:C
Solution:https://www.youtube.com/watch?v=wEzN6onF2AA

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2011
1.AsiliconPNjunctionisforwardbiasedwithaconstantcurrentatroomtemperature.
Whenthetemperatureisincreasedby10oC,theforwardbiasvoltageacrossthePNjunction
a.Increasesby60mV
b.Decreasesby60mV
c.Increasesby25mV
d.Decreasesby25mV
Answer:D
Solution:https://www.youtube.com/watch?v=tOiFRbBhJfY

2012
1.TheIVcharacteristicsofthediodeinthecircuitisgivenbelow,thenthecurrentinthe
circuitis

a.10mA
b.9.3mA
c.6.67mA
d.6.2mA
Answer:D
Solution:https://www.youtube.com/watch?v=I43NtISx1gc

2.Thediodesandcapacitorsshowninthecircuitareideal.ThevoltageV(t)acrossthe
diodeD1is

Answer:A
Solution:https://www.youtube.com/watch?v=EKgC4523quk

2013

1.ForaforwardbiasedPNjunctiondiode,thesequenceofeventsthatbestdescribesthe
mechanismofcurrentflowis
a.Injectionandsubsequentdiffusionandrecombinationofminoritycarriers
b.Injectionandsubsequentdriftandgenerationofminoritycarriers
c.Extractionandsubsequentdiffusionandgenerationofminoritycarriers
d.Extractionandsubsequentdriftandrecombinationofminoritycarriers
Answer:A
Solution:https://www.youtube.com/watch?v=uADJe1kw8ag

2014
Set1(15thFebruary2014(Forenoon))

1.Inthefigure,assumethattheforwardvoltagedropstothePNdiodeD1andSchottky
diodeD2are0.7voltsand0.3voltsrespectively.IfONdenotesconductingstateofthediode
andOFFdenotesthenonconductingstateofthediode,theninthecircuit,

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a.BothareON
b.D1isONandD2isOFF
c.BothareOFF
d.D1isOFFandD2isON
Answer:D
Solution:https://www.youtube.com/watch?v=qteoesfhVco

2.ThedopingconcentrationonthePsideandNsideofasilicondiodeare1x1016cm3
and1x1017cm3respectively.Aforwardbiasof0.3voltsisappliedtothediode.AtT=300oK,
theintrinsiccarrierconcentrationofsilicon,ni=1.5x1010cm3andKT/q=26mV.The
electronconcentrationattheedgeofthedepletionregiononthePsideis
a.2.3x109cm3
b.1x1016cm3
c.1x1017cm3
d.2.25x106cm3
Answer:A
Solution:https://www.youtube.com/watch?v=KJ1NDAVBw0U

SET2(15thFebruary2014(Afternoon))

1.ConsideranabruptPNjunction(atT=300oK)showninthefigure.Thedepletion
regionwidthXnontheNsideofthejunctionis0.2mandthepermittivityofsilicon( si)is
1.044x1012F/cm.Atthejunction,theapproximatevalueofthepeakelectricfield(in
kV/cm)is..

Answer:30.6
Solution:https://www.youtube.com/watch?v=6SGWS0QEdQ

2.WhenasilicondiodehavingadopingconcentrationofNA=9x1016cm3onPside

andND=1x1016cm3onNsideisreversedbiased,thetotaldepletionwidthisfoundtobe3
m.Giventhatthepermittivityofsiliconis1.04x1012F/cm,thedepletionwidthontheP
sideandthemaximumelectricfieldinthedepletionregion,respectively,are
a.2.7mand2.3x105V/cm
b.0.3mand4.15x105V/cm
c.0.3mand0.42x105V/cm
d.2.1mand0.42x105V/cm
Answer:B
Solution:https://www.youtube.com/watch?v=PRyI9roqNbA

3.Thediodeinthecircuitshown,ifVon=0.7voltsbutisidealotherwise.IfVi=5sin(t)
volts,theminimumandmaximumvaluesofVo(involts)are,respectively,

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a.5and2.7
b.2.7and5
c.5and3.85
d.1.3and5
Answer:C
Solution:https://www.youtube.com/watch?v=VNI1bsbW2i8

SET3(16thFebruary2014(Forenoon))
1.Thedonorandacceptorimpuritiesinanabruptjunctionsilicondiodeare1x1016cm3
and5x1018cm3,respectively.Assumethattheintrinsiccarrierconcentrationinsiliconni=
1.5x1010cm3at300oK,KT/q=26mVandthepermittivityofsilicon si=1.04x1012
F/cm.Thebuiltinpotentialandthedepletionwidthofthediodeunderthermalequilibrium
conditions,respectivelyare
a.0.7voltsand1x104cm
b.0.86voltsand1x104cm
c.0.7voltsand3.3x105cm
d.0.86voltsand3.3x105cm
Answer:D
Solution:https://www.youtube.com/watch?v=W1tmcbDY04

SET4(16thFebruary2014(Afternoon))

2015

1.Inthecircuitshown,assumethatthediodesD1andD2areideal.Theaveragevalueof
voltageVab(involts),acrossterminalsaandbis________________

Answer:5

Solution:https://www.youtube.com/watch?v=nK21y4c_m0Q

2.TheelectricfieldprofileinthedepletionregionofaPNjunctioninequilibriumis
showninthefigure.WhichoneofthefollowingisNOTTRUE?

a.TheleftsideofthejunctionisNtypeandtherightsideisPtype
b.BoththeNtypeandPtypedepletionregionsareuniformlydoped
c.Thepotentialdifferenceacrossthedepletionregionis700mV
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d.IfthePtyperegionhasadopingconcentrationof1015cm3,thenthedoping
concentrationintheNtyperegionwillbe1016cm3
Answer:C

Solution:https://www.youtube.com/watch?v=LNjwCHJv3UE
3.Aregionofnegativedifferentialresistanceisobservedinthecurrentvoltage
characteristicsofasiliconPNjunctionif
a.BoththePregionandNregionareheavilydoped
b.TheNregionisheavilydopedcomparedtoPregion
c.ThePregionisheavilydopedcomparedtoNregion
d.AnintrinsicsiliconregionisinsertedbetweenthePregionandtheNregion
Answer:A
Solution:https://www.youtube.com/watch?v=AfBuhR7yT50

4.Forthecircuitshown,assumeidealdiodes.Theshapeoftheoutput(Vout)forthegiven
sinewaveinput(Vin)willbe________________

Answer:C
Solution:https://www.youtube.com/watch?v=zvClgr7lhQE

5. ForasilicondiodeDOPINGwithPandNregions,theacceptoranddonorimpurity
concentrationsare1x1017 cm3and1x1015cm3respectively.ThelifetimesofelectroninPregion
andholesinNregionareboth100s.Theelectronandholediffusioncoefficientsare49cm2/sec
and36cm2/secrespectively.Assumethermalvoltageis26mV,theintrinsiccarrier
concentrationis1x1010cm3andq=1.6x1019C.Whenaforwardvoltageof208mVisapplied
acrossthediode,theholecurrentdensity(innA/cm2)injectedfromPregiontoNregionis
___________
Answer:28.617
Solution:https://www.youtube.com/watch?v=aR7Vz7Fm3co

6. ThebuiltinpotentialofanabruptPNjunctionis0.75volts.Ifitsjunctioncapacitance(CJ)at
areversebias(VR)of1.25voltsis5pF.ThevalueofCJ(inpF)whenVR=7.25voltsis_____
Answer:2.5
Solution:https://www.youtube.com/watch?v=dk28aPHYdnY

7.ThediodeinthecircuitgivenbelowhasVON=0.7voltsbutisidealotherwise.The
current(inmA)inthe4kresistoris__________________

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Answer:0.6
Solution:https://www.youtube.com/watch?v=pk_MWnHnVfo

PostedbyGATEpaperat10:14

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Labels:Diode,GATEQuestions,PNJunction

4 comments

Add a comment as Shivam Kumar

Top comments

Rajesh Jogi 6 months ago - Shared publicly

Sir please check the answer of last question in 2015 it may be .6
1 Reply

vinay kumar macha 7 months ago (edited) - Shared publicly

seems the solution to the gate 2015 7th question is doubtful, as
It
assumption of diode to be in forward bias must have diode current from p
to n but it is from n to p which would make diode to be in reverse biased. Sir
please review it.
+1
2

1 Reply

sanjay kumar 4 months ago

ans. will be 0.6,wrong explanation given.........

pooja v 1 year ago - Shared publicly

please provide solution link to 2nd question in1993 gate paper
+1
2

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