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UNISONIC TECHNOLOGIES CO.

, LTD
12N60

Power MOSFET

12A, 600V N-CHANNEL


POWER MOSFET

DESCRIPTION

The UTC 12N60 are N-Channel enhancement mode power


field effect transistors (MOSFET) which are produced using
UTCs proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.

FEATURES

* RDS(ON) = 0.8 @VGS = 10 V


* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number
Package
Lead Free
Halogen Free
12N60L-TA3-T
12N60G-TA3-T
TO-220
12N60L-TF1-T
12N60G-TF1-T
TO-220F1
12N60L-TF2-T
12N60G-TF2-T
TO-220F2
12N60L-TF3-T
12N60G-TF3-T
TO-220F
12N60L-T2Q-T
12N60G-T2Q-T
TO-262
Note: Pin Assignment: G: Gate
D: Drain
S: Source

www.unisonic.com.tw
Copyright 2013 Unisonic Technologies Co., Ltd

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tube
Tube
Tube
Tube
Tube

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12N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified)

PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
30
V
Avalanche Current (Note 2)
IAR
12
A
12
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
48
A
790
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220 / TO-262
225
W
Power Dissipation
TO-220F / TO-220F1
PD
51
W
TO-220F2
54
W
Junction Temperature
TJ
+150
C
Operating Temperature
TOPR
-55 ~ +150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25C

THERMAL DATA

PARAMETER
Junction to Ambient
TO-220 / TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2

SYMBOL
JA
JC

RATING
62.5
0.56
2.43
2.31

UNIT
C/W
C/W
C/W
C/W

ELECTRICAL CHARACTERISTICS (TC =25C, unless otherwise specified)

PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient BVDSS/TJ
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

TEST CONDITIONS

MIN TYP MAX UNIT

VGS = 0 V, ID = 250 A
600
VDS = 600 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
ID=250A, Referenced to 25C

V
1
A
100 nA
0.7
V/C

VDS = VGS, ID = 250A


VGS = 10V, ID = 6.0A

0.6

VDS = 25 V, VGS = 0 V,
f = 1MHz
VDS =0V, VGS =0V, f =1MHz

2.0

4.0
0.8

1480 1900
200 270
25
35
0.2
1.2

pF
pF
pF

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Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 300V, ID = 12A,
RG = 25 (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 480V,ID= 12A,
Gate-Source Charge
QGS
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 12A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 12A,
dIF/dt = 100 A/s (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width 300s, Duty cycle 2%
2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

MIN TYP MAX UNIT


30
115
95
85
42
8.6
21

380
3.5

70
240
200
180
54

ns
ns
ns
ns
nC
nC
nC

1.4

12

48

A
ns
C

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Power MOSFET

TEST CIRCUITS AND WAVEFORMS


+

D.U.T.

VDS
+
-

RG
Driver
VGS

VGS
(Driver)

P.W.

* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

Period

D=

VDD

P. W.
Period

VGS= 10V

IFM, Body Diode Forward Current


ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt


VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

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Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit

12V

Same Type
as D.U.T.

50k
0.2F

Switching Waveforms

QG

10V

0.3F
VDS

QGS

QGD

VGS
DUT
3mA

VGS

Charge

Gate Charge Test Circuit

Unclamped Inductive Switching Test Circuit

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

Gate Charge Waveform

Unclamped Inductive Switching Waveforms

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Power MOSFET

TYPICAL CHARACTERISTICS
Transfer Characteristics

On-Resign Characteristics
Top:

VGS
15V
10V
101
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V

101

25C
-55C
10

10

Notes:
250s Pulse Test
TC=25C
10-1

150C

100
101
Drain-Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

Notes:
1.VDS=50V
2.250s Pulse Test
10-1
2

4
6
8
Gate-Source Voltage, VGS (V)

10

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12N60
TYPICAL CHARACTERISTICS

Thermal Response, ZJC(t)

Drain Current, ID (A)

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD


www.unisonic.com.tw

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