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16MVD0070
TASK 1:
AIM:
B)Id vs
Vds:
PMOS:
a)Id vs Vgs
b)Id vs Vds:
PMOS:
d)ro vs vds:
For calculating ro :
ro=1/(Id/vds)
NMOS:
PMOS:
PMOS:
VSB
0
-1
VGS
170mv(vto)
190mv(vt)
10
VSB
0
1
VGS
-290mv(vto)
-370mv(vt)
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CONCLUSION:
1. The input characteristics (Id vs Vgs) of NMOS and PMOS was plotted and
calculated threshold voltage for nmos :170mv,Pmos:-290mv
2. BY varying Vsb values 0 to 1,calculated Body effect coefficient for
nmos:48.28m(VOLT)1/2 Pmos:-193m(VOLT)1/2
3. We get channel length modulation co-efficient value for
nmos:0.515/volt , Pmos:0.0049/volt
4. When the applied Vgs is below the threshold voltage no ID flows.Hence
studied the DC characteristic of NMOS and Pmos transistor
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