Aula 1 (Teoria Dos Semicondutores)

Curso: Engenharia de Computao
CIRCUITOS
ELETRNICOS I
ELC 1058
UNIDADE 1 ANLISE DE CIRCUITOS COM DIODOS

SEMICONDUTORES
Aula
1: Reviso
Conceito:
O que de
? Fsica
Unity 1: Semiconductors Theory

Lecture 1
Physics Review:
Benjamin Franklin (17061790)
1.
2.
Positive
charge
Negative
charge

Lecture 1
Physics Review:
Robert Millikan (18681953)
Prton
+e
Eltron
-e
4

Lecture 1
Physics Review:
Charles Coulomb (17361806)

Lecture 1
Physics Review:

Lecture 1
Physics Review:
Electric forces between
charges
Bohr Atomic Model

Lecture 1
Physics Review:
Atomic Theory

Lecture 1
Physics Review:
Atomic Theory & Charge
Electrical charge is an intrinsic property of matter that
manifests itself in the form of forces.
However, the way in which we use the term charge
extends beyond this.
An atom has equal numbers of electrons and protons,
leaving the atom as a whole uncharged.
If the atom acquires additional electrons, we say that
it (the atom) is negatively charged; conversely, if it
loses electrons we say that it is positively charged.
9

Lecture 1
Physics Review:
Examples
Atomic structures.
Germanium
Silicon
10

Lecture 1
Physics Review:
The term charge in this sense denotes an inbalance
between the number of electrons and protons present
in the atom.
The term charge can refer to the charge on an
individual electron or to the charge associated with a
whole group of electrons.
11

Lecture 1
Physics Review:
Atomic Theory
Simplified structure
Copper atom
Silicon atom
Atom with valence shell
Atom with valence shell
12

Lecture 1
Physics Review:
Free Electrons & Ions
Free electrons are valence electrons that gain

sufficient energy from heat alone to escape from their
parent atoms and wander from
13
atom to atom throughout the material.

Lecture 1
Physics Review:
Note that the free electrons do not
leave the substance, they simply
wander from the valence shell of one
atom to the valence shell of another.
The material therefore remains
electrically neutral.
The presence of a large number of free electrons that
makes a substance a good conductor of electric current
charged.
On the other hand, if the valence shell is full (or nearly
full), valence electrons are much more tightly bound.
Such materials have few free electrons.
14

Lecture 1
Physics Review:
If the atom
loses an
electron, it is
called a
positive ion;
if it gains an
electron, it is
called a
negative
ion.
15

Lecture 1
Physics Review:
Conductors, Insulators & Semiconductors
16

Lecture 1
Physics Review:
Conductors, Insulators & Semiconductors
17

Lecture 1
Physics Review:
Covalent Bonding
18

Lecture 1
Silicon (Si) Basics:

Intrinsic Silicon
Intrinsic semiconductor is a single-crystal
semiconductor material with no other types of atoms
within the crystal.
Tetrahedral configuration.
19

Lecture 1

ENERGY LEVELS
20

Lecture 1

Intrinsic Silicon
At room temperature some valence electrons gain
thermal energy enough (bandgap energy - Eg) to
break the covalent bond and move away from its
original position.
The electron will then be free to move within the crystal.
A positively charged empty state or hole is created.

At T=0K
At T>0K
Two-dimensional representation of silicon crystal
21

Lecture 1

Intrinsic Silicon
The free electron is the negative charge.
The hole is the positive charge.
In any semiconductor both charged particles contribute

to the current.
The concentration of electrons and holes directly influence in the
current.
E
3 g
2
kT
ni BT e
The concentration of e- and h+ in intrinsec semiconductors are

small, producing small currents.

Lecture 1

Extrinsic Silicon
The characteristics of semiconductor materials can be
altered significantly by the addition of certain
impurity atoms into the relatively pure
semiconductor material.
A semiconductor material that has been subjected
to the doping process is called an extrinsic material.
23

Lecture 1

Extrinsic Silicon
n-Type Material: impurity elements that have five
valence electrons (pentavalent), such as antimony,
arsenic, and phosphorus
Si
The inserted impurity atom

has donated a relatively free
electron to the structure.
Si
Si
Fifth valence
electron
Si
Si
Sb
donor atoms
Antimony
impurity
Si
Si
Si
Excess of free electrons

24

Lecture 1

Extrinsic Silicon
p-Type Material: impurity elements that have three
valence electrons, such as boron, gallium, and
indium
Si
Si
There is an insufficient number of

electrons to complete the covalent
bonds of the newly formed lattice.
The resulting vacancy will readily
accept a free electron.
Void
Si
Si
B
Boro
impurity
acceptor atoms
Si
Excess of holes
Si
Si
Si
25

Lecture 1

Extrinsic Silicon
Majority and Minority Carriers
In an n-type material the electron is called the majority
carrier and the hole the minority carrier.
In a p-type material the hole is the majority carrier and
the electron is the minority carrier.
26

Lecture 1

Extrinsic Silicon
Carriers concentrations
Intrinsic carrier concentration:
Hole concentration:
Nd no
Electron concentration:
Na po
ni 2 no po
ni 2
po
Nd
Donor atoms concentration.
ni 2
no
Na
Aceptor atoms concentration.

27

Lecture 1

Drift and Diffusion Currents
Drift is the moviment of charge caused by electric fields.
Diffusion is the flow caused by variations in the
concentration, that is concentration gradients.
Drift current:
E
vdn
E
vdp
Jn
n-Type
Jp
p-Type
28

Lecture 1

Drift and Diffusion Currents
Drift is the moviment of charge caused by electric fields.
Diffusion is the flow caused by variations in the
concentration, that is concentration gradients.
Diffusion current:
Low concentration
High concentration
29

Lecture 1
The pn junction:
At thermal equilibrium
p
X=0
Simplified geometry of
pn junction
Na
Nd
po
no
X=0
Doping profile of na ideal uniform

doped pn junction
The interface at x=0 is called metallurgical junction.

A large density gradient in both the hole and electron
concentrations occurs across this junction.
30
30

Lecture 1
The pn junction:
Na
p-region
Hole diffusion
Space-charge region or
depletion region
n-region
Nd
Electron diffusion
E field
p
Potential
n
X=0
The potential through

the junction
X=0
Initial diffusion at metallurgical
junction (establishing thermal
equilibrium)
31

Lecture 1
The pn junction:
Circuit Analysis
32

Lecture 1
The pn junction:
Reverse biased
Positive voltage applied to n-region.
Circuit Analysis
VR induces na applied electric field, EA.
EA
Minority
carrier flow
E field
n
W
VR
No current across the

pn junction
The direction of EA is the same as the

E-field.
Since the electric fields outside the
space-charge region is zero, the
magnitude of the space-charge region
field increases above the thermal
equilibrium value.
This increased electric field holds
back the holes in p-region and the
electrons in the n-region.
33

Lecture 1
The pn junction:
Reverse biased
When the space-charge region field

increases, the number of positive and
negative charges also increases.
Circuit Analysis
EA
Minority
carrier flow
E field
n
W
VR
Considering the doping concentration

is constant, the width (W) of the
space charge region must to
increase.
A capacitance is associated with the
pn junction when a reverse-bias
voltage is applied.
The junction capacitance can be
1
written as,
Vbi Bult-in potential barrier

c j 0 Junction cap. at zero applied voltage
VR
c j c j 0 1
Vbi
34

Lecture 1
The pn junction:
Positive voltage applied to p-region.
Forward biased
VD induces na applied electric field, EA.
Circuit Analysis
EA
Majority
carrier flow
E field
n
W
iD
VD
The direction of EA is the opposite of

the E-field.
Since the electric fields outside the
space-charge region is zero, the
potential barrier decreases.
The net result is the electric field in
the space-charge region is lower than
the equilibrium value.
Majority carrier electrons from the nregion diffuse into the p-region.
Majority carrier holes from the p35

region diffuses into the n-region.

Lecture 1
The pn junction:
Forward biased
p-region
n-region
holes
electrons
n x
Excess
electron
concentration
Excess hole
concentration
no
X=0
p x
As the majority carriers cross into the

opposite regions, they become
minority carriers.
Thus, the minority carriers
concentration increase.
po
x
36

Lecture 1
The pn junction:
Current-Voltage relationship
ID
forward bias
reverse bias
D
kV
TK
I D I S e 1
VD
37

Lecture 1
The pn junction:
Zener effect
ID
forward bias
reverse bias
VZ
VD
Zener region
38

Lecture 1
The pn junction:
Temperature effect
39

Lecture 1
The pn junction:
Resistance Levels
DC or Static Resistance
40

Lecture 1
The pn junction:
Resistance Levels
AC or Dynamic Resistance
Diode characteristic
DID
Q-point
(DC-operating point)
DVD
41

Lecture 1
The pn junction:
Resistance Levels
Using differential calculus.
42

Lecture 1
The pn junction:
Resistance Levels
43

Lecture 1
The pn junction:
Resistance Levels
The dynamic resistance can be found simply by substituting the quiescent

value of the diode current into the equation. It is accurate only for values of
ID in the vertical-rise section of the curve.
For small values of ID below the knee of the curve, Eq. (1.7) becomes
inappropriate.
44

Lecture 1
The pn junction:
Resistance Levels
Summary
45

Lecture 1
The pn junction:
Equivalent Circuits Models
ID
VD
ID
VD
ID
VD
46
UNIDADE 1 ANLISE DE CIRCUITOS COM DIODOS

SEMICONDUTORES
Aula 1:
Exerccios
Conceito:
O que
?
47

Lecture 1
EXERCISES
SEMICONDUCTOR MATERIALS:
Discussion:
48

Lecture 1
EXERCISES
49

Lecture 1
EXERCISES
50

Lecture 1
EXERCISES
EXTRINSIC MATERIALS:
Discussion:
Both the n- and p-type materials are formed
by adding a predetermined number of
impurity atoms into a germanium or silicon
base. The n-type is created by introducing
those impurity elements that have five
valence electrons (pentavalent), such as
antimony, arsenic, and phosphorus.
51

Lecture 1
EXERCISES
PN JUNCTION BIAS:
Discussion:
52

Lecture 1
EXERCISES
RESISTANCE LEVELS:
53

Lecture 1
EXERCISES
PN JUNCTION BIAS:
54

Lecture 1
EXERCISES
RESISTANCE LEVELS:
Discussion:
As the operating point of a diode moves from one region to another

the resistance of the diode will also change due to the nonlinear shape
of the characteristic curve. Three different levels are introduced:
DC or Static Resistance
Average AC Resistance
55

Lecture 1
EXERCISES
RESISTANCE LEVELS:
56

Lecture 1
EXERCISES
RESISTANCE LEVELS:
57

Lecture 1
EXERCISES
EQUIVALENT CIRCUITS:
58

Aula 1 (Teoria Dos Semicondutores)

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Aula 1 (Teoria Dos Semicondutores)

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Copyright:

Verfügbare Formate

Curso: Engenharia de Computao

UNIDADE 1 ANLISE DE CIRCUITOS COM DIODOS

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Bohr Atomic Model

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Atom with valence shell

Atom with valence shell

Unity 1: Semiconductors Theory

Free electrons are valence electrons that gain

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

A positively charged empty state or hole is created.

Two-dimensional representation of silicon crystal

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

In any semiconductor both charged particles contribute

The concentration of e- and h+ in intrinsec semiconductors are

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

The inserted impurity atom

Excess of free electrons

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

There is an insufficient number of

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Donor atoms concentration.

Aceptor atoms concentration.

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Silicon (Si) Basics:

Unity 1: Semiconductors Theory

Doping profile of na ideal uniform

The interface at x=0 is called metallurgical junction.

Unity 1: Semiconductors Theory

The potential through

Unity 1: Semiconductors Theory

Unity 1: Semiconductors Theory

Positive voltage applied to n-region.

VR induces na applied electric field, EA.

No current across the

The direction of EA is the same as the