Beruflich Dokumente
Kultur Dokumente
Thin
Film Physics and Technology
SCPY663(SpecialTopicsinPhysicsI)
( p
p
y
)
Somsak Dangtip, Ph.D.
Department of Physics
Faculty of science, Mahidol University
Semester 2 Academic year 2009
O t b 2009 March
October
M
h 2010
1
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ThinFilmoverview
Source
T
Transport
t
Solid
S lid
Liquid
Vapor
Gas
Supply Rate
Vacuum
Fluid
Fl id
Plasma
Uniformity
Deposition
Characterization
andAnalysis
SubstrateCondition
S b t t C diti
ReactivityofSource
material
EnergyInput
E
I
t
Annealing
Structure
Composition
Properties
Process Modification
BasicVacuumTechnology
DiagramofVacuum System
Thin Film & Sensor Laboratory (K406)
ThinFilm&SensorLaboratory(K406)
MFC
Vacuum system
Materials:
Stainless Steel
The most widely used material is stainless steel, 304 and 316. Their melt point is
~1060 oC. They are chemically stable, not easily react with oxygen, bakeable, can
be applied at both low and high temperature.
The 316LN type stainless steel has exceptional properties compared to type 304:
316LN flanges are harder and their knife edge does not roll over as quickly,
g them ideal for frequently
q
y dismantled chamber ports
p
or critical beam-line
making
flanges.
During manufacture, 316LN is fired at 950oC in N2 to purge H2 from the steel
matrix, producing a much lower H2 background.
A 316LN system with 316LN flanges reaches lower ultimate pressures, since it
can be baked to 550 oC.
For systems with heat-sensitive components, 316LN material reach the same
b
base
pressure as 304 flanges
fl
at lower
l
bakeout
b k
temperatures.
For applications susceptible to magnetic fields, 316LN offers lower magnetic
permeability (1.001, versus 1.03 for 304).
Vacuum system
Materials:
Aluminum (melt point: 660 oC) can also be used for vacuum components,
although a fresh Al surface can quickly react with water and oxygen. The
drawbacks are their lower mechanical properties and difficulty in welding.
Brass (Copper-zinc alloy) has excellent mechanical properties and can
be easily welded. But they can be used in vacuum only at a room
temperature or below since at a high temperature the Zn will generate a
vapor as its melting point is low (419 oC).
Pure copper free of oxygen (OFC) OFC is used for the electric or
thermal conductors in vacuum.
Iron or usual steel should not be employed in vacuum as they can easily
react with water and oxygen.
Flanges (i)
Flanges
CF (Knife-edge) flanges
Gasket
Standard copper gaskets
Fully annealed copper gaskets
Silver-plated copper gaskets Aluminum
gaskets
Viton gaskets
Special gaskets from materials such as
gold--plated
gold
plated copper, silver
silver-diffused
diffused
copper, zirconium-copper alloy, nickel
and lead have been requested for
uncommon applications.
pp
Flanges (ii)
KF (QF,
(
NW)) fl
flanges
KF (Klein Flange) is a simple and flexible O-ring vacuum coupling. The system
(defined by the International Standards Organization) is also known as `QF' or
`NW
NW.'' Th
The system
t
iincludes
l d KF10,
KF10 KF16,
KF16 KF25,
KF25 KF40,
KF40 and
d KF50.
KF50 When
Wh th
the tube
t b
diameter exceeds 2 inches or 50 mm OD, the system name changes to `ISO' or
'Large ISO.' The sealing mechanism does not change but there are substantial
differences between KF and ISO flange designs and clamps
clamps.
KF fittings are used for rough or foreline vacuum plumbing and simple HV (10-6 Torr)
chambers. The elastomeric O-ring limits the connection's temperature range and
ultimate vacuum
vacuum.
ISO flanges
ISO-K Flanges
g
ISO-F Flanges
Valves
Types of valves: Although there are a
vast number of valves, they can be
grouped into the following categories:
Gate valves
Rectangular
g
valves
Right-angle and block valves
Straight-through valves
Ball valves
Inline valves
Butterfly valves
Variable conductance controllers
Leak valves
Valves
Gate valves
Valves
Rectangular Valve:
These simple gate valves are used on
systems that require valves with minimal
height while maximizing the width. These
are excellent valves for systems that
move discs from one level to another.
Valves
Valves
Valves
Ball Valve: This is a low-cost valve used
only at foreline pressures. Ball valves
should not be used at HV pressures
because the potential for gas evolution
and leak is too high. They are useful
p
g good
g
service
valves,, however,, providing
at rough vacuum pressures.
Inline Valve: Inline valves have their
inlet and outlet flanges on 'opposite
sides' of the valve,, but the center
lines of the ports are parallel rather
than coincident. This type of valve is
used where the `plumbing' cannot
accept a right-angle turn.
Conductance for a given bore is low,
because the gas must make two
right-angle
h
l turns in the
h valve
l body.
b d
Valves
Butterfly
y Valve: These simple
p valves
open to give a high conductance, but
obstructed, path as the flapper remains
in the valve bore. They are used above
diffusion pumps and in forelines. When
mounting this type of valve, remember to
leave room above and below for the
flapper to rotate.
Valves
Variable Conductance Controller: It
may be argued that this device (VCC) is
not a valve. As its name states, it controls
the conductance between two vacuum
sections most often between a HV pump
sections,
and a sputtering or etching chamber
where the operating pressure is in the
10-2 Torr range during operation,
operation but 10-6
Torr during pumpdown. Since HV pumps
cannot operate at 10-2 Torr and process
gas loss from the chamber would be
unacceptably high with a direct
connection, the VCC throttles the port
during
g sputtering/etching
p
g/
g and is opened
p
for high conductance during pumpdown
to remove contaminants.
Valves
All vacuum processes using low pressure gases are sensitive to `number density' (the number
of molecules per cm-3) of gas. Attempts to regulate the vacuum process by adjusting
volumetric flow are ineffective since number density changes with pressure and temperature.
Mass flow -- a measure of the number of molecules flowing past a point - is directly related
to number density and, hence, process rate.
Mass flow controllers (MFC) operate by measuring the heat input required to maintain a
temperature profile along a laminar flow sensor tube. One patented type has a sensor with
three heaters that maintain the profile with an auto-balancing bridge circuit. Its response time
(less than 0.5 sec) gives fast control without overshoots or oscillations. The straight, largeb
bore
sensor tubes
b off some controllers
ll
ensure laminar
l
flow
fl
and
d minimize particulate
l
clogging,
l
condensation and the effect of ambient temperature fluctuations.
For mass flow measurement, the sensor simply monitors the flow and displays it either on an
external or integral display meter. For mass flow control, the metered flow rate is continuously
compared with a user-defined setpoint and generates an out-of-balance feedback signal that
proportionally regulates an electromagnetic valve.
In modern gas handling, low contamination and particulate content is critical. The materials
wetted
d by
b the
h gas stream inside
i id the
h MFC,
MFC the
h regulating
l i valve
l characteristics,
h
i i assembly
bl under
d
Class 100 clean room conditions and double-bag packing are vital considerations when
choosing an MFC.
MFC
T1
T2
p1
p2
T2 T1 = Bc p Q
B Proportion
p
alityy
Constant
for
Kinetic
equilibrium distribution of molecular velocities: Maxwell- Boltzmann formula
1 dn
4 M
f (v ) =
=
n dv
2 RT
M: molecular weight (kg)
T: absolute temperature (K)
R:gas
g constant = 8.314 J/mole-K
/
n: number density of molecules (m-3)
3/ 2
Mv 2
v exp
2 RT
2
f (v)dv = 1
average velocity; v
most p
probable velocity;
y; vm
d
f ( vm ) = 0
dv
2 RT
; vm =
M
v =0=
d
v f (v)dv
0
f (v)dv
8RT
M
2 1/ 2
v
0
depends on temperature
f (v)dv
=
f (v)dv
kinetic energy
gy of a mole onlyy
3RT
M
1
3
M v 2 = RT
2
2
vm < v < v
2 1/2
1 nM 2
nRT
N RT
v =
=
3 NA
NA
NA V
pV =
N
RT
NA
F N
[ p ] = = 2 = Pa
A m
O h frequently
Other
f
l used
d units:
i
1 atm = 1.013 105 Pa
1 torr = 133.3 Pa
Mean-free path, :
Average distance traveled by molecules
Between successive molecule/molecule collisions
Smith 2.6
d 2 n = 1
RT
Collision:
vN A vN A p =
2
N
d
p
=
n=
A
V
vRT
RT
1500
1.5cm
1cm
6.6 10 3 Pa
P / pm
pN A
2MRT
= 2.63 10 20
p
gK
molecules
Pa
cm 2 s
MT
Knudsen equation
gas
Oriflice area A
vacuum
V =
A
A 1
11.7 2
n
cm s
How long does it take until an initially clean surface is coated by and
contaminated with a monolayer of gas molecules (assuming all arriving
molecules stick to the surface)?
)
Very important issue for
Preparation of thin films under clean conditions
(inverse growth rate (ML/s)-1 >> monolayer formation time)
Surface analysis (analysis time << monolayer formation time)
ML = 1ML 1019
ML = 3.8 10 6
air, 105 Pa
UHV, 10-8 Pa
Rule of Thumb
molecules
m2
MT Pa
( ).s
gK p
(atom = 3A diameter)
ML~ 3.510-9 s
ML~ 9.5h
ML~ 1s at 10-6 mbar
Gas transport
some facts that are necessary for a successful design of vacuum systems
benefits
f off a good design: short pumping times, low costs
gas flow: net directed movement of a gas, combined with a pressure drop
ttwo main
i gas fl
flow regimes
i
(D:
(D system
t
dimension):
di
i )
molecular flow, >>D
low pressure, HV, UHV, collisions with container walls prevail
viscous flow,
flow <<D
CVD, molecule-molecule collisions prevail
laminar for low flow velocities, turbulent for high flow velocities
Knudsen number Kn=D/:
molecular flow
Kn<1
air: Dp < 3.7 10-7m Pa
intermediate flow
1<Kn<110
viscous flow
Kn>110
air: Dp > 3.7 10-5m Pa
The gas flow mechanisms may differ in various parts of the same system
Q
Flow conductance C
or l/s):
C=
With gas throughput Q (pressurevolume/s) p
(m3/s
A 1
C 11.7 2
cm s
1
1
=
Csys
i Ci
Csys = Ci
1/ 2
= 11.7 A
A2 T
C = 6.18
DL M
D3 T
C = 3.81
L M
C = 9.70
1/ 2
T
C = 2.85 D
M
1/ 2
D3
L
( D2 D1 ) 2 ( D2 + D1 )
= 12.2
L
1/ 2
b2c 2 T
(b + c) L M
= 12.2
1/ 2
1 + 3L / 4 D
= 31.1
= 9.14
b2c 2
(b + c) L
D2
1 + 3L / 4 D
A
11.7 A0
=
1 A0 / At
1 ( A / A0 )
1/ 2
D3 T
1
12.2 D 3
C = 3.81
=
L M
4 D D 2
4D D 2
1 2
1+
1 2
L
1 +
3L Dt
3L Dt
T
C = 3.64
M
1/ 2
Vacuum Pumps
Basic function: remove gas molecules and reduce density and pressure
pumping
p
p g speed:
p
S = Q/p
= gas throughput (pressurevolume/s) / pressure at pump inlet
if Q = 0
p,S
Q
Qp
pp,S
Sp
Vacuum chamber
Q:throughput
Q pp S p = p S = C ( p pp )
pp
pp
S = Sp = Sp
Q
p
+p
C
Sp
Sp
=
=
Sp
Q
Sp
1+
1+
C pp
C
a high
g conductance C is desirable
Q = S p p p Qp
Q = 0; for ; p red =
Qp
Sp
Qp
Q
= S p 1 p 0
= S p 1
p pexit
S p
p
p
p
exit
d
dp
= S p p p Qp
Q = ( pV ) = V
dt
dt
p p (t ) p exit
Sp
= exp
t
p p (0) p exitit
V
Pressure falls exponentially (molecular regime only) with time constant V/Sp
Vacuum Pumps
Diaphragm Pumps
downward
moving
Lowest
position
iti
Upward
moving
highest
position
Dr. Walter Umrath with contributions from Dr. Hermann Adam , Alfred Bolz, Hermann Boy, Heinz Dohmen,
Karl Gogol, Dr. Wolfgang Jorisch, Walter M.nning,Dr. Hans-J.rgen Mundinger, Hans-Dieter Otten, Willi Scheer,Helmut Seiger, Dr.
Wolfgang Schwarz, Klaus Stepputat, Dieter Urban,Heinz-Josef Wirtzfeld, Heinz-Joachim Zenker
Operating principles : Gas Transfer Vacuum Pump (VP), positive displacement VP, rotary VP, liquid sealed
Operating principles : Gas Transfer Vacuum Pump (VP), positive displacement VP, rotary VP, liquid sealed
Root Pumps
Operating principles : Gas Transfer Vacuum Pump (VP), positive displacement VP, rotary VP, dry processing
Turbo-Molecular Pumps
Sorption Pumps
Cryogenic Pump