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NATIONAL INSTITUTE OF TECHNOLOGY.

KURUKSHETRA
Semester 3. 2013-201,1

BTECH: ECT-201: SEMICONDUCTOR DEVICES & APPLICATTONS


End Sem Exam
Time -l hl
M.M: 100
Nore: 1. Llsr oI COMPULSORY questionsr l, 2, 5, 8. 11
2. Choice is given in the remaining questions in each unit.
3. All parls ot' a question must be doDe at onc place.
'1. use ofcalculator is allowed. Dra* neat diag.ams $herever neccssary & rabcr arl the impollant pts.
Useful Dala: At 300'K, nr= 1.5 x 1010 cm I, kT/q = 0.026V, o= 8.854 x 10ra F/cm, Diclecidc co stnnts for
Si is 1 1.8 and for SiO, is 3.9, q=l .6x10 's C, kn (process rransconducrance)=pn Cox(W/L).Fn=t 350 cmz/Vs.
!p=450 cnrr/Vs

l.

Attenpt all parts.


(a) Find the outpur voltage of the regulated po\\,er supplv shown

qe5

14.5 = 20)
iD

fig. below

aka.i oc

clP

(b) In a silicon scn)iconllucror metedal the etfccliYe dcrsity of stnLes fun.]tion it! 27.C (rootr
lcmpcmture) are givcl by 2-8xl0r9cn r and l..1x10recm r rcspeclively. Th( intrinsic carricr
aollcenllation in silicon is n;=l-5xl0i0cnt3at room telrpcraturc. lf lhe rnr|]]rsrc carncr.
concenlratiol it'r silicon is to be no greater lhan n, =lxl0r2/cntr, then .leleunine lhe mrximunl
leltlpcraturc allowcd Ior Lhe silicon.
(c) Fird the expression for reverse saturation curent in a p-n juDction in tetms of ni. then pro\rc that

Ia AVt t
t

bo? t/1
+ br\Lpo.

r\
L"al

Where o, (or) = conducdvit) of n(p) sidc, di = conductivity of intr insic material, b

(d) Calculatc the collector current of Qr in thc citcuit shown bclow and determine the maximrnl
allo$,able value olRc ior operation in the aclive mode.

t9'

Rc

Ilnif-I
(e) Ditri!t Einstcin Relalion 1br a nonunilbflt]ly dopcd scnriconduclor
(b) Does rnobilil) ha\ e ary orciLniDs ar very high field l Why?

ir

therntal cquilibriunt.

(l0l
(:)

(a) Dcrivc an cxprcssi{)n rclaling thc inlinsic lc\,el E, to lhe centre oi thc baud gep E"/l.Calaulatc lhc
disllirc.meDl of I fr.orn E./2 lbr Sj al 3(]0k. iLssurnin" the cffectilc mass valucs 1br cl.cl()n\ and
hole a.c l.l rno alld 0..-56 nrO respecLi\,elvl1)

(b) The linear electron-concentration profile shown below has been established in a piece of !ii'
(pA/!mr). Il a dilTusion current of
= I0r7cur'3 and W= 1Lrm, flnd thc eiecffon-curlerlt dcnsity in
is required whal must the cross sectional area (in a dircction peryendicular to the pagc) be?
Y\(r,)

4.

-:
:
rf

- =:

(1) =:

at
Consider a bar of p-type Si material that is homogeneously doped to a value of 3 x 10ricm3
T=:t00K. Ihe applied electric field is zero. A light sou.ce is incidenl on the end oI the semiconductor
r'
as show. belo\,r, the cxcess carrier concentratioll gcne$led at x=0 is Ep(O) = En(0) =i{)l3crn
?s
7s,
(a)
AssuNe the following parameters, pn = 1200cm:/V s, T.0=5x10
1t, = 46'11'Jm'?7y t. tn6=1x l0

late the steadv state exccss cleclr.on anal hole conccnftations as a funclion of dislancc
scmiconduclor. (b) Calculate the electron ditTusion culre1lt densily as a lunction o[ x'

calc

illlo

lhe

(8)

tird ;
---

;
Unit-2

5.

(a) An abrupt Si p-njunctior ( A = 10


p side

N'

= lorTcm

Tu

- 0 lirs

4cmr

) has the tbllowing prcpefties at 300K:


n sidc

Nl =10lscnl

tP = 10Ps

g" = 1300cmr/v's
200cn1,ry.s
Ur. -'150rn)'\ ''
!n T0rJcrr /V.:
the
forward cufient? What is the current at a reverse
What
is
by
0
5V.
Theju,lction is tbrward biased
(10)
bias of -0.5V 1
(b) An abrupt silicon p-n junction at T = 300 K is uniformly doped with Na = 101scm ' and
iu = to''.,'r', t The p-n junction area is 6 x10-r cnrr' An induclence ol 2'2mH is placed in parallel
Fp =

(i)
with the pn iuncrlon- Caiculate the leso ant frequency oi lhe circlril lor reversc bias vollages of
(1)
vn = rv;nj (ii) vo = lov (vu =

o.7v)

6.

bridge
Find PIV, voltage at the secondary windings and the transformer turns ratio in a full wave aDd
a
rectifier cirouit and tien compare the results of the two circuils' Assume the input voltage is fio
cut-in voltage
110 V(nns), 50 Hz ac sourcc. The desired peak output voltage Vo is 8V, and the diode
(6)
is assuned to be V, = 0.3V.

OR
7.

junctio' capacllance znJ


A Si ntp junction is biased al VR=10V. Determine the percent change in (i)
r5
(ii) builiin potential if the doping in the p region increases by factor of 2?

Unit-3

A Ge transistor is

=l.5KO.

used in the self biasing adangement as shown in fig. With V." =


The quiescent point is chosen to be Vce = 8V and L = 4mA. Find the expression

lactor S.

Il a srabilily laclor S- I2

8.

is desired and 0 = 50. find R r. R: and R..

A v't'

9. For the circuit shown in fig. The parameters are VBB

100. Find 16, Ic, IE and Rc such that

Rs = 5So

and Rc

for stability

(t2)

tu

Rr

and p

l6V

Klr

V*

= 1.5V,

(:) ,"

RB

= 580KO, V+ = 5V, VEs (on) = 0.6V,


(8)

Vec

10.

t,5v

rB

1I

tu

OR
Write the hyb d parameter model equations for CE, CB and CC configurations for pnp transistol.
(8)
Draw the hybrid model for all these configurations.
Unit-4

of an ideal MOS capacitor in equitib um. Explain with energy band


diagrams, the following modes of operation of a MOS capacitor' (i) Accumulation (ii) Depletion (iii)
(12)
12. The measured voltage and curent data for a MOSFET are given below. Detemine the type of the

1. Sketch the energy band diagram

device, and calculate the parameters kn, Vth and

8.

vnsN)

I^. (uA)

9'1

235
433

(8)

OR
13. Design the dc bias of a JFET circuit with an n-channel depletion rBode JFET. For the ckt shown
below, the transistor paramete$ are: Ioss = 5n{, V, = - 4v Design the circuit such that Io = 2mA
(8)
and Vos = 6V.

r+.l,

Ra

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