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Semester 3. 2013-201,1
l.
qe5
14.5 = 20)
iD
fig. below
aka.i oc
clP
(b) In a silicon scn)iconllucror metedal the etfccliYe dcrsity of stnLes fun.]tion it! 27.C (rootr
lcmpcmture) are givcl by 2-8xl0r9cn r and l..1x10recm r rcspeclively. Th( intrinsic carricr
aollcenllation in silicon is n;=l-5xl0i0cnt3at room telrpcraturc. lf lhe rnr|]]rsrc carncr.
concenlratiol it'r silicon is to be no greater lhan n, =lxl0r2/cntr, then .leleunine lhe mrximunl
leltlpcraturc allowcd Ior Lhe silicon.
(c) Fird the expression for reverse saturation curent in a p-n juDction in tetms of ni. then pro\rc that
Ia AVt t
t
bo? t/1
+ br\Lpo.
r\
L"al
(d) Calculatc the collector current of Qr in thc citcuit shown bclow and determine the maximrnl
allo$,able value olRc ior operation in the aclive mode.
t9'
Rc
Ilnif-I
(e) Ditri!t Einstcin Relalion 1br a nonunilbflt]ly dopcd scnriconduclor
(b) Does rnobilil) ha\ e ary orciLniDs ar very high field l Why?
ir
therntal cquilibriunt.
(l0l
(:)
(a) Dcrivc an cxprcssi{)n rclaling thc inlinsic lc\,el E, to lhe centre oi thc baud gep E"/l.Calaulatc lhc
disllirc.meDl of I fr.orn E./2 lbr Sj al 3(]0k. iLssurnin" the cffectilc mass valucs 1br cl.cl()n\ and
hole a.c l.l rno alld 0..-56 nrO respecLi\,elvl1)
(b) The linear electron-concentration profile shown below has been established in a piece of !ii'
(pA/!mr). Il a dilTusion current of
= I0r7cur'3 and W= 1Lrm, flnd thc eiecffon-curlerlt dcnsity in
is required whal must the cross sectional area (in a dircction peryendicular to the pagc) be?
Y\(r,)
4.
-:
:
rf
- =:
(1) =:
at
Consider a bar of p-type Si material that is homogeneously doped to a value of 3 x 10ricm3
T=:t00K. Ihe applied electric field is zero. A light sou.ce is incidenl on the end oI the semiconductor
r'
as show. belo\,r, the cxcess carrier concentratioll gcne$led at x=0 is Ep(O) = En(0) =i{)l3crn
?s
7s,
(a)
AssuNe the following parameters, pn = 1200cm:/V s, T.0=5x10
1t, = 46'11'Jm'?7y t. tn6=1x l0
late the steadv state exccss cleclr.on anal hole conccnftations as a funclion of dislancc
scmiconduclor. (b) Calculate the electron ditTusion culre1lt densily as a lunction o[ x'
calc
illlo
lhe
(8)
tird ;
---
;
Unit-2
5.
N'
= lorTcm
Tu
- 0 lirs
4cmr
Nl =10lscnl
tP = 10Ps
g" = 1300cmr/v's
200cn1,ry.s
Ur. -'150rn)'\ ''
!n T0rJcrr /V.:
the
forward cufient? What is the current at a reverse
What
is
by
0
5V.
Theju,lction is tbrward biased
(10)
bias of -0.5V 1
(b) An abrupt silicon p-n junction at T = 300 K is uniformly doped with Na = 101scm ' and
iu = to''.,'r', t The p-n junction area is 6 x10-r cnrr' An induclence ol 2'2mH is placed in parallel
Fp =
(i)
with the pn iuncrlon- Caiculate the leso ant frequency oi lhe circlril lor reversc bias vollages of
(1)
vn = rv;nj (ii) vo = lov (vu =
o.7v)
6.
bridge
Find PIV, voltage at the secondary windings and the transformer turns ratio in a full wave aDd
a
rectifier cirouit and tien compare the results of the two circuils' Assume the input voltage is fio
cut-in voltage
110 V(nns), 50 Hz ac sourcc. The desired peak output voltage Vo is 8V, and the diode
(6)
is assuned to be V, = 0.3V.
OR
7.
Unit-3
A Ge transistor is
=l.5KO.
lactor S.
Il a srabilily laclor S- I2
8.
A v't'
Rs = 5So
and Rc
for stability
(t2)
tu
Rr
and p
l6V
Klr
V*
= 1.5V,
(:) ,"
RB
Vec
10.
t,5v
rB
1I
tu
OR
Write the hyb d parameter model equations for CE, CB and CC configurations for pnp transistol.
(8)
Draw the hybrid model for all these configurations.
Unit-4
8.
vnsN)
I^. (uA)
9'1
235
433
(8)
OR
13. Design the dc bias of a JFET circuit with an n-channel depletion rBode JFET. For the ckt shown
below, the transistor paramete$ are: Ioss = 5n{, V, = - 4v Design the circuit such that Io = 2mA
(8)
and Vos = 6V.
r+.l,
Ra