Beruflich Dokumente
Kultur Dokumente
Electrical Engineering
NERIST, Itanagar, Arunachal Pradesh- 791109. Email: sahaparamjit@live.com
Student, Electrical and Electronics Engineering
National Institute of Technology, Sikkim- 737139.
Assistant Professor, EEE Department, Indian Institute of Technology
Guwahati, Assam 781-039 Email: sknayak@iitg.ernet.in
Research Scholar, EEE Department, Indian Institute of Technology
Guwahati, Assam 781-039. Email: himanshu.sahu@iitg.ernet.in
AbstractSolar Energy is a clean and boundless energy
source and the worldwide solar market demand is increasing for
industrial and domestic purposes. The purpose of this paper is to
show the comparison of Stochastic Method(Genetic Algorithm)
over derivative methods. A mathematical development [3] is
provided for the extraction of Solar Panel equivalent circuit
parameters from datasheet values. The analytical approach is
selected for the mathematical development as the initial-point
vital for proper evaluation of the Parameters of the double
diode Model of PV cells. And thus using Evolutionary technique
to extract the values of the parameters, a valid comparison
has been presented between the numerical approaches and the
Evolutionary Algorithms.
KeywordsParameter Extraction, Double Diode, Newton Raphson, Genetic Algorithm. Parameter Extraction, Double Diode,
Newton Raphson, Genetic Algorithm. .
I.
I NTRODUCTION
II.
L ITERATURE R EVIEW
PV C ELL M ODELLING
,(((
A. Double-Diode Model
Im (1 +
Voc
Rs Isc
) exp(
)] +
Ns V t
Ns V t
Voc
Rs Isc
Voc Rs Isc
) exp(
)] +
Is2 [exp(
2Ns Vt
2Ns Vt
Rsh
Is1 [exp(
Rs
)
Rsh
V + Rs I
Rsh
(1)
where,
Iph = Photo-current generated by the Cell.
ID1 ,ID2 = Diode currents from the diode D1 and D2
respectively.
Rs = Series Resistance.
Rsh = Shunt Resistance.
The diode currents for Diode D1 and D2 respectively, are
given as
ID1 = Is1 (exp(
V + Rs I
) 1)
n1 N s V t
V + Rs I
) 1)
n2 N s V t
(2)
(3)
V + Rs I
V + Rs I
V + Rs I
) 1)Is2 (exp(
) 1)
Ns V t
2Ns Vt
Rsh
(4)
where,
V= Terminal Voltage,
n1 and n2 = Diffusion and Recombination Diode Ideality
Factor.
Now, from the above equation, we have 7 unknown
parameters,i.e, Rs , Rsh , Is1 , Is2 , n1 , n2 and Iph . These 7
parameters are needed to be extracted from the equation above.
Im
Is1
V m + Im Rs
(1 + Rs
)exp(
)
Ns V t
Vm
Ns V t
Im
V m + Im Rs
Is2
(1 + Rs
)exp(
)
2Ns Vt
Vm
2Ns Vt
Im
1
(1 + Rs
)
Rsh
Vm
Voc
Vm + Rs Im
) exp(
)]
Ns V t
Ns V t
Voc
V m + Rs Im
) exp(
)]
+Is2 [exp(
2Ns Vt
2Ns Vt
Voc Vm
+
Rsh
Is1 [exp(
1
Is1
Rs Isc
+
exp(
)
Rsh
Ns V t
Ns V t
Rs Isc
Is2
exp(
)] 1
+
2Ns Vt
2Ns Vt
(Rsh Rs )[
DATASHEET-VALUES
Voc (V )
Isc (A)
Vm (V )
Im (A)
Pm (W )
Ns
PV-MODULE
32.9
8.21
26.3
7.61
200
54
Parameters
Analytical-Method
Newton-Raphson
Rs ()
Rsh ()
Is1 (nA)
Is2 (A)
Iph (A)
0.2280
135.5309
0.29153
17.556
8.21
0.3181254
278.9106
0.3794957
4.4335
8.2193
Fig. 2.
A. GENETIC ALGORITHM
Fig. 3.
min f (x)
xRn
TABLE II.
Now, from the plot we can say that the V-I and power curve
for the extracted value using Newton-Raphson Algorithm is
deviating from its actual Datasheet Values. So, for better results
Evolutionary Algorithm can be implemented and thus a better
result is expected as compared to Newton-Raphson Algorithm.
IV.
PROBLEM FORMULATION
(5)
(6)
GENETIC ALGORITHM
Sl.No.
Parameters
Lower Bound
Upper Bound
1
2
3
4
5
6
7
Iph (A)
Is1 (nA)
Is2 (A)
a1
a2
Rs ()
Rsh ()
8
0.1
30
0
1
0
100
8.3
0.2
40
1
2
1
500
GENETIC ALGORITHM
PV-MODULE
KC200GT
Parameters
Genetic Algorithm
Iph (A)
Is1 (nA)
Is2 (A)
a1
a2
Rs ()
Rsh ()
8.21
0.1257773
32.3902
0.9996242
2.0000
0.0013
418.2039
R EFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
The V-I and Power plot shows that GA results are quite
accurate to the actual Data-Sheet Values of KC200GT PV
Module under STC conditions in comparison to the NewtonRaphson Algorithm [3].
V.
[15]
C ONCLUSION
[16]