FDP047N08

N-Channel

PowerTrench

tm

MOSFET

75V, 164A, 4.7m

Features

Description

RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A

This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been espe-

Fast switching speed

cially tailored to minimize the on-state resistance and yet

Low gate charge

maintain superior switching performance.

High performance trench technology for extremely low RDS(on)

Application

High power and current handling capability

DC to DC convertors / Synchronous Rectification

RoHS compliant

G DS

TO-220
FDP Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol
VDSS

Drain to Source Voltage

Parameter

VGSS

Gate to Source Voltage

Units
V

20

-Continuous (TC = 25oC)

164*

116*

ID

Drain Current

-Continuous (TC = 100oC)

IDM

Drain Current

- Pulsed

EAS

Single Pulsed Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

(Note 1)

656

(Note 2)

670

mJ

3.0

V/ns

(Note 3)
(TC = 25oC)

268

- Derate above 25oC

1.79

W/oC

-55 to +175

oC

300

oC

Ratings

Units

PD

Power Dissipation

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds

TL

Ratings
75

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A.

Thermal Characteristics
Symbol

Parameter

RJC

Thermal Resistance, Junction to Case

0.56

RCS

Thermal Resistance, Case to Sink Typ.

0.5

RJA

Thermal Resistance, Junction to Ambient

62.5

2008 Fairchild Semiconductor Corporation

FDP047N08 Rev. A

oC/W

www.fairchildsemi.com

FDP047N08 N-Channel PowerTrench MOSFET

March 2008

Device Marking
FDP047N08

Device
FDP047N08

Package
TO-220

Reel Size
-

Tape Width
-

Quantity
50

Electrical Characteristics
Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics
BVDSS
BVDSS
/ TJ

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

ID = 250A, VGS = 0V, TC = 25oC

75

ID = 250A, Referenced to 25oC

0.02

V/oC

IDSS

Zero Gate Voltage Drain Current

VDS = 75V, VGS = 0V

VDS = 75V, TC = 150oC

500

IGSS

Gate to Body Leakage Current

VGS = 20V, VDS = 0V

100

2.5

3.5

4.5

3.7

4.7

150

nA

On Characteristics
VGS(th)
RDS(on)

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 80A

gFS

Forward Transconductance

VDS = 10V, ID = 80A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V

f = 1MHz

7080

9415

pF

870

1155

pF

410

615

pF

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg(tot)

Total Gate Charge at 10V

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain Miller Charge

VDD = 37.5V, ID = 80A

RGEN = 25, VGS = 10V
(Note 4, 5)

VDS = 60V, ID = 80A

VGS = 10V
(Note 4, 5)

100

210

ns

147

304

ns

220

450

ns

114

238

ns

117

152

nC

37

nC

32

nC

Drain-Source Diode Characteristics

IS

Maximum Continuous Drain to Source Diode Forward Current

164

ISM

Maximum Pulsed Drain to Source Diode Forward Current

656

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 80A

1.25

trr

Reverse Recovery Time

45

ns

Qrr

Reverse Recovery Charge

VGS = 0V, ISD = 80A

dIF/dt = 100A/s

66

nC

(Note 4)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

FDP047N08 Rev. A

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FDP047N08 N-Channel PowerTrench MOSFET

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Figure 1. On-Region Characteristics

VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V

*Notes:
1. VDS = 20V
2. 250s Pulse Test

ID,Drain Current[A]

100
ID,Drain Current[A]

Figure 2. Transfer Characteristics

500

500

10

100
o

175 C
o

25 C

10
o

-55 C

*Notes:
1. 250s Pulse Test
o

2. TC = 25 C

1
0.002

1
3

0.01
0.1
1
VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

IS, Reverse Drain Current [A]

500

0.005
VGS = 10V

0.004
VGS = 20V

0.003

100
o

175 C
o

25 C

10

*Notes:
1. VGS = 0V

*Note: TC = 25 C

0.002
0

100
200
300
ID, Drain Current [A]

1
0.2

400

Figure 5. Capacitance Characteristics

VGS, Gate-Source Voltage [V]

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

8000

Coss

4000

*Note:
1. VGS = 0V
2. f = 1MHz

Crss

FDP047N08 Rev. A

0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]

1.4

Figure 6. Gate Charge Characteristics

Ciss

0
0.1

2. 250s Pulse Test

10

12000

Capacitances [pF]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature

0.006

RDS(ON) [],
Drain-Source On-Resistance

4
5
6
VGS,Gate-Source Voltage[V]

VDS = 15V
VDS = 37.5V
VDS = 60V

2
*Note: ID = 80A

0
1
10
VDS, Drain-Source Voltage [V]

30

20

40
60
80
100
Qg, Total Gate Charge [nC]

120

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FDP047N08 N-Channel PowerTrench MOSFET

Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation vs.

Temperature
2.5

RDS(on), [Normalized]
Drain-Source On-Resistance

BVDSS, [Normalized]
Drain-Source Breakdown Voltage

1.15

1.10

1.05

1.00

0.95

*Notes:
1. VGS = 0V
2. ID = 10mA

0.90
-100

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

2.0

1.5

1.0
*Notes:
1. VGS = 10V
2. ID = 80A

0.5
-100

200

Figure 9. Maximum Safe Operating Area

-50
0
50
100
150
o
TJ, Junction Temperature [ C]

200

Figure 10. Maximum Drain Current

vs. Case Temperature
180

1000

150

100s

100

1ms
10ms
DC

Operation in This Area

is Limited by R DS(on)

10

ID, Drain Current [A]

ID, Drain Current [A]

30s

*Notes:

120
90
60
Limited by package

1. TC = 25 C

30

2. TJ = 175 C
3. Single Pulse

0
25

0.1
1

10
VDS, Drain-Source Voltage [V]

100

50
75
100
125
150
o
TC, Case Temperature [ C]

175

Figure 11. Transient Thermal Response Curve

2
Thermal Response [ZJC]

1
0.5

0.1

0.2

0.05

t1
t2

0.02

0.01

0.01

*Notes:
o

1. ZJC(t) = 0.56 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)

Single pulse

1E-3
-5
10

FDP047N08 Rev. A

PDM

0.1

-4

10

-3

-2

-1

10
10
10
Rectangular Pulse Duration [sec]

10

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FDP047N08 N-Channel PowerTrench MOSFET

Typical Performance Characteristics (Continued)

FDP047N08 N-Channel PowerTrench MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP047N08 Rev. A

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FDP047N08 N-Channel PowerTrench MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VDD

VSD

Body Diode
Forward Voltage Drop

FDP047N08 Rev. A

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FDP047N08 N-Channel PowerTrench MOSFET

Mechanical Dimensions

TO-220

FDP047N08 Rev. A

www.fairchildsemi.com

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33

FDP047N08 Rev. A

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FDP047N08 N-Channel PowerTrench MOSFET

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