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AP7219M

WCDMA/TD-SCDMA/LTE TDD and FDD


Multimode Multiband Power Amplifier Module
Datasheet
VERSION 1.0 18-Mar-2016

This document is commercially confidential and must NOT be disclosed to third parties without prior consent.
The information provided herein is believed to be reliable. But production testing may not include testing of
all parameters. AIROHA Technology Corp. reserves the right to change information at any time without
notification. ( HTTP://WWW.AIROHA.COM.TW TEL:+886-3-6128800 FAX:+886-3-6128833 sales@airoha.com.tw )

Confidential for Gionee

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

This document is commercially confidential and must NOT be disclosed to

third parties without prior consent.


The information provided herein is believed to be reliable. But production
testing may not include testing of all parameters. AIROHA Technology
Corp. reserves the right to change information at any time without
notification.

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 2 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Revision History
Version

Change Summary

Date

Author

1.0

Created datasheet

18-Mar-16

Philip Tseng

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 3 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

INDEX
1
2
3
4
5
6

Revision History .................................................................................................... 3


Features............................................................................................................... 5
Applications.......................................................................................................... 5
Description ........................................................................................................... 5
Pin Assignment ..................................................................................................... 6
Function Block Diagram ........................................................................................ 8

Electrical Characteristics ........................................................................................ 9


7.1 ABSOLUTE MAXIMUM RATINGS..................................................................................................... 9
7.2 RECOMMENDED OPERATING CONDITIONS ....................................................................................... 9

8
9
10
11

Electrical Specification .........................................................................................10


MIPI Registers .....................................................................................................21
Package Dimension ..............................................................................................26
Evaluation Board .................................................................................................29

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 4 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Features

WCDMA Bands I, II, III, IV, V, VIII


TD-SCDMA Bands 34, 39
FDD LTE Bands 1, 2, 3, 4, 5, 7, 8,
9, 12, 13, 17, 20, 28, 30
TDD LTE Bands 38, 39, 40, 41
Low Voltage Positive Bias Supply
3.2V ~ 4.5V
+28dBm Linear Output Power at
LTE
10MHz
12RB
QPSK
modulation (MPR=0)
High Efficiency
30% at 28dBm
High Dynamic Range
Optimized for DC-DC Converter
Operation
Integrated Output Switch
Small Outline

4mm x 6.8mm x 0.86mm

42-pin configuration
MIPI RFFE Interface

Applications

Wireless Handsets

WCDMA
HSDPA
HSUPA
TD-SCDMA
TDD LTE

FDD LTE

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Description
The AP7219M is a high-power, high-efficiency,
linear power amplifier module which supports 3G /
4G handset for low, mid, and high bands. All the RF
ports are matched to 50 for reducing external
matching components. Circuit control uses MIPI
interface to optimize linearity and current
performance for extending battery life time.
3G: The AP7219M supports WCDMA, HSDPA,
HSUPA, and TD-SCDMA modulation.
4G: The AP7219M supports FDD-LTE, TDD-LTE
with 1.4, 3, 5, 10, 15, 20 MHz channel bandwidths.

Page 5 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

TRX1

GND

HB4

GND

HB3

41

40

39

38

37

36

GND

35

HB2

34

GND

GND

33

HB1

SDATA

32

MB5

SCLK

31

GND

VIO

30

VCC2

VBATT

29

VCC1

NC

28

VCC2_2

NC

10

27

GND

NC

11

26

MB4

RFIN_M

12

25

MB3

RFIN_L

13

24

GND

GND

14

23

MB2

GND

15

22

GND

AIROHA

16

17

18

19

20

21

LB5

MB1

AP7219M

LB1

RFIN_H

LB2

GND

42

LB3

LB4

GND

TRX2

Pin Assignment

Top View

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 6 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Pin Name Description


PIN

SIGNAL

DESCRIPTION

RFIN_H

High band input

SDATA

MIPI data bus

SCLK

MIPI clock bus

VIO

MIPI supply

VBATT

Power supply from battery

NC

Float or connect to GND

10

NC

Float or connect to GND

11

NC

Float or connect to GND

12

RFIN_M

Mid band input

13

RFIN_L

Low band input

16

LB4

LB RF output of port4

17

LB3

LB RF output of port3

18

LB2

LB RF output of port2

19

LB1

LB RF output of port1

20

LB5

LB RF output of port5

21

MB1

MB RF output of port1

23

MB2

MB RF output of port2

25

MB3

MB RF output of port3

26

MB4

28

VCC2_2

MB RF output of port4
2

nd

stage PA collector power supply of LB and MB

st

29

VCC1

1 stage PA collector power supply of LB, MB, and HB

30

VCC2

32

MB5

MB RF output of port5 (B34/39)

33

HB1

HB RF output of port1

35

HB2

HB RF output of port2

37

HB3

HB RF output of port3

39

HB4

HB RF output of port4

41

TRX1

HB3 RX

42

TRX2

HB1, HB2, HB4 RX

nd

rd

and 3 stage PA collector power supply of HB

Pads 1, 2, 4, 14, 15, 22, 24, 27, 31, 34, 36, 38, and 40 are GND pads.

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 7 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Function Block Diagram

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 8 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Electrical Characteristics
Absolute Maximum Ratings
AP7219M could be damaged by any stress in excess of the absolute maximum ratings listed below.
ITEM

MIN.

MAX.

VBATT

-0.3 V

5.5 V

VCC1

-0.3 V

5.5 V

VCC2

-0.3 V

5.5 V

VCC2_2

-0.3 V

5.5 V

Power Supply Voltage

VIO

2.2V

SCLK/SDATA

2.2V

RF Input Power

10 dBm
55 C

Storage Temperature

+150 C

Recommended Operating Conditions


Item

Supply Voltage

Symbol

Min.

Typ.

Max.

Unit

VBATT

3.2

3.4

4.2

VCC1

0.5

3.4

4.2

VCC2

0.5

3.4

4.2

VCC2_2

0.5

3.4

4.2

+85

1.95

0.2 x VIO

20

Operating Temperature
MIPI RFFE Supply
MIPI RFFE Signal

VIO

1.65

Low

SCLK/SDATA

High

SCLK/SDATA

0.8 x VIO

1.8

VIO

-20

25

85

Ambient Temperature

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 9 of 32

1.8

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Electrical Specification
PARAMETER

CONDITION

LTE
TDD Band 40

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
TD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.

Frequency Range

MIN.

TYP.

2300

Max. Linear Output

MPR = 0

MAX.

UNIT

2400

MHz
dBm

28

Power
Gain

Pout = 28dBm

ACLR E-UTRA

Pout = 28dBm

-35

dB

ACLR1 UTRA

Pout = 28dBm

-36

dB

ACLR2 UTRA

Pout = 28dBm

-40

dB

EVM

Pout = 28dBm

3.5

PAE

Pout = 28dBm, VCC1=VCC2=3.4V

30

Total Supply Current

Pout = 28dBm, VCC1=VCC2=3.4V

620

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Harmonic

-140

dBm/Hz

ISM RX : 2447~2483.5MHz

-106

dBm/Hz

1.8

VSWR

2f0, Po 28dBm

-7

dBm

3f0 , Po 28dBm

-10

dBm

uS

-36

dBm

level of RF
VSWR 6:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

GPS RX : 1574~1577MHz

Time from DC settled to 90% target

Stability (Spurious)
Ruggedness

uA

VSWR, , Po 28dBm

Input VSWR

dB

10

VIO=0V

Noise Power

RF Rise/Fall Time

29

Page 10 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

LTE
TDD Band 38

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
TD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.

Frequency Range

MIN.

TYP.

2570

Max. Linear Output

MPR = 0

MAX.

UNIT

2620

MHz
dBm

28

Power
Gain

Pout = 28dBm

ACLR E-UTRA

Pout = 28dBm

-35

dB

ACLR1 UTRA

Pout = 28dBm

-36

dB

ACLR2 UTRA

Pout = 28dBm

-40

dB

EVM

Pout = 28dBm

3.5

PAE

Pout = 28dBm, VCC1=VCC2=3.4V

30

Total Supply Current

Pout =28dBm, VCC1=VCC2=3.4V

610

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Harmonic

-140

dBm/Hz

ISM RX : 2400~2483.5MHz

-114

dBm/Hz

1.5

VSWR

2f0, Po 28dBm

-7

dBm

3f0 , Po 28dBm

-10

dBm

uS

-36

dBm

level of RF
VSWR 6:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

GPS RX : 1574~1577MHz

Time from DC settled to 90% target

Stability (Spurious)
Ruggedness

uA

VSWR, , Po 28dBm

Input VSWR

dB

10

VIO=0V

Noise Power

RF Rise/Fall Time

29

Page 11 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

LTE
TDD Band 41

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
TD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.

Frequency Range

MIN.

TYP.

2496

Max. Linear Output

MPR = 0

MAX.

UNIT

2690

MHz
dBm

28

Power
Gain

Pout = 28dBm

ACLR E-UTRA

Pout = 28dBm

-35

dB

ACLR1 UTRA

Pout = 28dBm

-36

dB

ACLR2 UTRA

Pout = 28dBm

-40

dB

EVM

Pout = 28dBm

3.5

PAE

Pout = 28dBm, VCC1=VCC2=3.4V

30

Total Supply Current

Pout = 28dBm, VCC1=VCC2=3.4V

620

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Harmonic

-140

dBm/Hz

ISM RX : 2400~2452MHz

-104

dBm/Hz

1.5

VSWR

2f0, Po 28dBm

-7

dBm

3f0 , Po 28dBm

-10

dBm

uS

-36

dBm

level of RF
VSWR 6:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

GPS RX : 1574~1577MHz

Time from DC settled to 90% target

Stability (Spurious)
Ruggedness

uA

VSWR, , Po 28dBm

Input VSWR

dB

10

VIO=0V

Noise Power

RF Rise/Fall Time

29

Page 12 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

PARAMETER

CONDITION

LTE
FDD Band 7

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
FDD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.

Frequency Range

MIN.

TYP.

2500

Max. Linear Output

HPM

MAX.

UNIT

2570

MHz
dBm

28

Power
Gain

HPM, Pout = 28dBm

ACLR E-UTRA

HPM, Pout = 28dBm

-35

dB

ACLR1 UTRA

HPM, Pout = 28dBm

-36

dB

ACLR2 UTRA

HPM, Pout = 28dBm

-40

dB

EVM

HPM, Pout = 28dBm

3.5

PAE

Pout = 28dBm, VCC1=VCC2=3.4V

30

Total Supply Current

Pout =28dBm, VCC1=VCC2=3.4V

610

mA

Leakage Current

VCC1=VCC2=VCC2_2=VBATT=4.2V,

Harmonic

-125

dBm/Hz

GPS RX : 1574~1577MHz

-140

dBm/Hz

ISM RX : 2400~2452MHz

-108

dBm/Hz

1.5

VSWR

2f0, Po 28dBm

-7

dBm

3f0 , Po 28dBm

-10

dBm

uS

-36

dBm

level of RF
VSWR 6:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

RX : 2620~2690MHz

Time from DC settled to 90% target

Stability (Spurious)
Ruggedness

uA

VSWR, , Po 28dBm

Input VSWR

dB

10

VIO=0V

Noise Power

RF Rise/Fall Time

28

Page 13 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

Band Select
Switch

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
o
Ta=25 C unless otherwise specified.

Frequency Range

Insertion Loss

VSWR

Isolation

Switch Time

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

MIN.

TYP.

2300

MAX.

UNIT

2690

MHz

HB3 to TRX1

0.75

dB

HB1 to TRX2

0.75

dB

HB2 to TRX2

0.75

dB

HB4 to TRX2

0.75

dB

All TX port in RX mode

HB2 to HB1

30

dB

HB2 to HB3

30

dB

HB2 to HB4

30

dB

HB3 to TRX1

25

dB

HB3 to TRX2

25

dB

HB1 to TRX1

25

dB

HB1 to TRX2

25

dB

HB4 to TRX1

25

dB

HB4 to TRX2

25

dB

Between any two ports

Page 14 of 32

2.5

us

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

FDD-LTE
Mid Band

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
FDD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.

MIN.

TYP.

MAX.

UNIT

Band1

1920

1980

MHz

Frequency

Band2

1850

1910

MHz

Range

Band3

1710

1785

MHz

Band4

1710

1755

MHz

Band1

27

dBm

Max. Linear

Band2

27.5

dBm

Output Power

Band3

27.5

dBm

Band4

27

dBm

28

dB

Gain

HPM, Pout = 28dBm

ACLR E-UTRA

HPM, Pout = 28dBm

-36

dB

ACLR1 UTRA

HPM, Pout = 28dBm

-37

dB

ACLR2 UTRA

HPM, Pout = 28dBm

-42

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1= VCC2_2=3.4V

32

Total Supply Current

Pout =28dBm, VCC1= VCC2_2=3.4V

570

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Noise Power

Input VSWR
Harmonic

RF Rise/Fall Time

Confidential for Gionee

-133

dBm/Hz

B2: fRX=fTX+80MHz

-132

dBm/Hz

B3: fRX=fTX+95MHz

-133

dBm/Hz

B4: fRX=fTX+400MHz

-135

dBm/Hz

VSWR, Po 28dBm

2:1

VSWR

2f0, Po 28dBm

-7

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

uA

B1: fRX=fTX+190MHz

Time from DC settled to 90% target

Stability
Ruggedness

10

VIO=0V

Page 15 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

WCDMA
Mid Band

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
o
WCDMA Modulation, Ta=25 C unless
otherwise specified.

MIN.

TYP.

MAX.

UNIT

Band1

1920

1980

MHz

Frequency

Band2

1850

1910

MHz

Range

Band3

1710

1785

MHz

Band4

1710

1755

MHz

Band1

28

dBm

Max. Linear

Band2

28

dBm

Output Power

Band3

28

dBm

Band4

28

dBm

28

dB

Gain

HPM, Pout = 28dBm

ACLR1 5MHz offset

HPM, Pout = 28dBm

-38

dB

ACLR2 10MHz offset

HPM, Pout = 28dBm

-46

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1= VCC2_2=3.4V

32

Total Supply Current

Pout =28dBm, VCC1= VCC2_2=3.4V

570

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Noise Power

Input VSWR
Harmonic

RF Rise/Fall Time

Confidential for Gionee

-133

dBm/Hz

B2: fRX=fTX+80MHz

-132.5

dBm/Hz

B3: fRX=fTX+95MHz

-132.5

dBm/Hz

B4: fRX=fTX+400MHz

-135

dBm/Hz

VSWR, Po 28dBm

2:1

VSWR

2f0, Po 28dBm

-7

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

uA

B1: fRX=fTX+190MHz

Time from DC settled to 90% target

Stability
Ruggedness

10

VIO=0V

Page 16 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

FDD-LTE
Low Band

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
FDD-LTE 10MHz 12RB QPSK Modulation,
o
Ta=25 C unless otherwise specified.

Frequency
Range

MIN.

TYP.

MAX.

UNIT

Band5

824

849

MHz

Band8

880

915

MHz

Band12

699

716

MHz

Band13

777

787

MHz

Band17

704

716

MHz

Band20

832

862

MHz

Band28

703

748

MHz

Max. Linear Band5,8,13,20


Output
Band12,17,28
Power

28

dBm

27.5

dBm

28

dB

Gain

HPM, Pout = 28dBm

ACLR E-UTRA

HPM, Pout = 28dBm

-35

dB

ACLR1 UTRA

HPM, Pout = 28dBm

-36

dB

ACLR2 UTRA

HPM, Pout = 28dBm

-42

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1= VCC2_2=3.4V

32

Total Supply Current

Pout = 28dBm, VCC1= VCC2_2=3.4V

570

mA

Leakage Current

VCC1=VCC2= VCC2_2=VBATT=4.2V,

Noise Power

Input VSWR
Harmonic

RF Rise/Fall Time
Stability
Ruggedness

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

10

VIO=0V

uA

B5: fRX=fTX+45MHz

-133

dBm/Hz

B8: fRX=fTX+45MHz

-133

dBm/Hz

B13: fRX=fTX-31MHz

-132

dBm/Hz

B17: fRX=fTX+30MHz

-130

dBm/Hz

B20: fRX=fTX-41MHz

-133

dBm/Hz

B28: 758~803MHz

-133

dBm/Hz

VSWR, , Po 28dBm

2:1

VSWR

2f0, Po 28dBm

-7

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

Time from DC settled to 90% target


level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

Page 17 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

WCDMA
Low Band

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V,
o
WCDMA Modulation, Ta=25 C unless
otherwise specified.

MIN.

TYP.

MAX.

UNIT

Frequency

Band5

824

849

MHz

Range

Band8

880

915

MHz

Max. Linear

dBm

Output

Band5,8

28

Power
Gain

HPM, Pout = 28dBm

ACLR1 5MHz offset

HPM, Pout = 28dBm

-38

dB

ACLR2 10MHz offset

HPM, Pout = 28dBm

-46

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1= VCC2_2=3.4V

32

Total Supply Current

Pout = 28dBm, VCC1= VCC2_2=3.4V

570

mA

Leakage Current

VCC1=VCC2=VCC2_2=VBATT=4.2V,

Noise Power
Input VSWR
Harmonic

RF Rise/Fall Time
Stability
Ruggedness

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

28

dB

10

VIO=0V

uA

B5: fRX=fTX+45MHz

-133

dBm/Hz

B8: fRX=fTX+45MHz

-133

dBm/Hz

VSWR, , Po 28dBm

2:1

VSWR

2f0, Po 28dBm

-7

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

Time from DC settled to 90% target


level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

Page 18 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

TD-SCDMA
Band 34/39

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V
o
, TD-SCDMA Modulation, Ta=25 C
unless otherwise specified.

MIN.

TYP.

MAX.

UNIT

Frequency

Band34

2010

2025

MHz

Range

Band39

1880

1920

MHz

Max. Linear
Output

dBm
Band34/39

28

Power
Gain

HPM, Pout = 28dBm

ACLR1 1.6MHz offset

HPM, Pout = 28dBm

-38

dB

ACLR2 3.2MHz offset

HPM, Pout = 28dBm

-48

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1=VCC2_2=3.4V

28

Total Supply Current

Pout =28dBm, VCC1= VCC2_2=3.4V

650

mA

Leakage Current

VCC1=VCC2=VCC2_2=VBATT=4.2V,
VSWR, , Po 28dBm

Harmonic

Ruggedness

uA
VSWR

2f0, Po 28dBm

-8

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

1.5:1

Time from DC settled to 90% target

Stability

dB

10

VIO=0V

Input VSWR

RF Rise/Fall Time

28

Page 19 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
PARAMETER

CONDITION

TD-LTE
Band 39

Typical values are tested under


VBATT=VCC1=VCC2=VCC2_2=3.4V
o
, TD-LTE Modulation, Ta=25 C unless
otherwise specified.

Frequency
Range
Max. Linear
Output Power

Band39

MIN.

TYP.

1880

Band39

MAX.

UNIT

1920

MHz
dBm

27

Gain

HPM, Pout = 28dBm

ACLR E-UTRA

HPM, Pout = 28dBm

-35

dB

ACLR1 UTRA

HPM, Pout = 28dBm

-36

dB

ACLR2 UTRA

HPM, Pout = 28dBm

-42

dB

EVM

HPM, Pout = 28dBm

PAE

Pout = 28dBm, VCC1= VCC2_2=3.4V

30

Total Supply Current

Pout =28dBm, VCC1= VCC2_2=3.4V

610

mA

Leakage Current

VCC1=VCC2=VCC2_2=VBATT=4.2V,
VSWR, , Po 28dBm

Harmonic

Ruggedness

uA
VSWR

2f0, Po 28dBm

-8

dBm

3f0, Po 28dBm

-10

dBm

4f0, Po 28dBm

-20

dBm

uS

-36

dBm

level of RF
VSWR 5:1, all phase
Po< 28dBm, VSWR 10:1, all phase,

No

time =10s

damage

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

1.5:1

Time from DC settled to 90% target

Stability

dB

10

VIO=0V

Input VSWR

RF Rise/Fall Time

28

Page 20 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

MIPI Registers
Address

Parameter

Default(Hex)

Reserved[7]

Note

Trigger

Reserved[7] = 0
[6:3] = 0000 (Standby)
[6:3] = 0001 (LB1_TX)
[6:3] = 0010 (LB2_TX)
[6:3] = 0011 (LB3_TX)
[6:3] = 0100 (LB4_TX)
[6:3] = 0101 (LB5_TX)
[6:3] = 0110 (MB1_TX)

PA Band Select[6:3]
0x00

[6:3] = 0111 (MB2_TX)


0x00

[6:3] = 1000 (MB3_TX)

[6:3] = 1001 (MB4_TX)


[6:3] = 1010 (MB5_TX)
[6:3] = 1011 (HB1_TX)
[6:3] = 1100 (HB2_TX)
[6:3] = 1101 (HB3_TX)
[6:3] = 1110 (HB4_TX)
PA_EN[2] = 0 (Standby Mode)

PA_EN[2]

PA_EN[2] = 1 (PA Enable)

Reserved[1:0]

Reserved[1:0] = 00
HB_Bias2[7:4] : 1111 (Maximum bias set)

HB_Bias2[7:4]
0x01

HB_Bias2[7:4] : 0000 (Minimum bias set)


0x00

HB_Bias1[3:0]

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

HB_Bias1[3:0] : 1111 (Maximum bias set)

HB_Bias1[3:0] : 0000 (Minimum bias set)

Page 21 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
Address

Parameter

Default(Hex)

Spare Mode[7:4]

Note

Trigger

[7 :4] = 0000 (Spare)

[3:0] = 0000 (switch off)


0x02

HB switch RX

0x00

control [3:0]

[3:0] = 0001 (HB1 to HBRX2)


[3:0] = 0010 (HB2 to HBRX2)

[3:0] = 0011 (HB3 to HBRX1)


[3:0] = 0100 (HB4 to HBRX2)

Reserved[7]

Reserved[7] = 0
Boost Bias[6:4] : 111 (Maximum bias set)

Boost Bias[6:4]
0x03

0x00
HB_Bias3[3:0]

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Boost Bias[6:4] : 000 (Minimum bias set)

HB_Bias3[3:0] : 1111 (Maximum bias set)


HB_Bias3[3:0] : 0000 (Minimum bias set)

Page 22 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
Address

Parameter

Default(Hex)

Note

Trigger

[7] = 1 (Engineering test, Default=1)


[6] = 0 (Engineering test, Default=0)

Programmable
0x0C

mode for MB and LB

0x00

bias

[5] = 0 = Default setting


1= Programmable mode for 0X08, 0X09,

0X0A, 0X0B
[4:0] = 00000 (Spare)

Reserved[7:5]
0x08

Reserved[7:5] = 000
0x00

MB_Bias1[4:0]

Reserved[7:5] = 000
0x00

MB_Bias2[4:0]

0x00

Confidential for Gionee

Reserved[7:5] = 000
0x00

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

LB_Bias1[4:0] : 11111 (Maximum bias set)


LB_Bias1[4:0] : 00000 (Minimum bias set)

Reserved[7:5]

LB_Bias1[4:0]

Reserved[7:5] = 000

LB_Bias1[4:0]

0x0B

MB_Bias2[4:0] : 11111 (Maximum bias set)


MB_Bias2[4:0] : 00000 (Minimum bias set)

Reserved[7:5]
0x0A

MB_Bias1[4:0] : 00000 (Minimum bias set)

Reserved[7:5]
0x09

MB_Bias1[4:0] : 11111 (Maximum bias set)

LB_Bias2[4:0] : 11111 (Maximum bias set)

LB_Bias2[4:0] : 00000 (Minimum bias set)

Page 23 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
Address

Parameter

Default(Hex)

Note
PM_Trig[7:6] : 00; Normal Operation (Active)
PM_Trig[7:6] : 01; Default Settings (Startup)

PM_Trig[7:6]

PM_Trig[7:6] : 10; Low Power Mode


PM_Trig[7:6] : 11; Reserved
Trig_Mask_2[5] = 0 (Trigger Enable, Default)
Trig_Mask_2[5] = 1; If this bit is set trigger 2 is disabled.

Trig_Mask_2[5]

When disabled writing to a register that is associated to


trigger 2 the data goes directly to the destination register.
Trig_Mask_1[4] = 0 (Trigger Enable, Default)
Trig_Mask_1[4] = 1; If this bit is set trigger 1 is disabled.

Trig_Mask_1[4]

When disabled writing to a register that is associated to


trigger 1 the data goes directly to the destination register.

0x1C

0x00

Trig_Mask_0[3] = 0 (Trigger Enable, Default)


Trig_Mask_0[3] = 1; If this bit is set trigger 0 is disabled.

Trig_Mask_0[3]

When disabled writing to a register that is associated to


trigger 0 the data goes directly to the destination register.
Trig_2[2] = 0 (Default)

Trig_2[2]

Trig_2[2] = 1; A write of a one to this bit loads trigger 2's


registers.
Trig_1[1] = 0 (Default)

Trig_1[1]

Trig_1[1] = 1; A write of a one to this bit loads trigger 1's


registers.
Trig_0[0] = 0 (Default)

Trig_0[0]

Trig_0[0] = 1; A write of a one to this bit loads trigger 0's


registers.

Address

Parameter

Default(Hex)

0x1D

Product_ID

0x0F

Product_ID[7:0] = 00001111

0x1E

Manufacture_ID

0x49

Manufacture_ID[7:0] = 01001001

Spare
0x1F

Manufacture_ID
USID

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Note

Spare = 00
0x3F

Manufacture_ID[9:8] = 11
USID = 1111

Page 24 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Register Write Command Timing Diagram

Register Read Command Timing Diagram


.

AP7219M Power Amplifier Module


Datasheet
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Confidential for Gionee

Page 25 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Package Dimension

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 26 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 27 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 28 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

Evaluation Board

1
1

11

13

15

17

11

13

15

19

P5

17

19

AP7219M evaluation board is an interfacing circuit for testing and analysis, the
evaluation board schematic and drawing are included for preliminary design reference.
In AP7219M schematic, R1 is to connect VCC1 and VCC2 net and the default value
is 0ohm. R2 is to connect VCC1 and VCC2_2 net and the default value is 0ohm. Single
supply voltage source is required on this test condition.

2
2

4
4

6
6

12

10

10

14

12

16
SDATA

14

18

16

20

C1
10uF

SCLK

C2
220pF

VIO

VBATT
C3
22pF

18

20

HEADER10X2-2.54

R1

R2

NC
NC
C4

C7

C15

10uF

10uF

10uF

C5

C8

C14

J17

C9

220pF
C13

22pF

J16
SMA-H

22pF
1

37

GND

G
3

G
G

G
3

24
MB2

23

MB2

SN

MB3

25

MB4

26

GND

GND

J12
SMA-H

27

J11
SMA-H

22

GND

AP7219PCB

SN

LB4

J10
SMA-H

MB1
LB5
1

J4
SMA-H

J5
SMA-H

J6
SMA-H

G
G

J7
SMA-H

J8
SMA-H

SN

SN

SN

SN

1
3

SN

SN

SN

SMA-H

G
G

LB1

LB2

LB3

SN

J3

RFIN_L

HB3

38
GND

HB4

39

40
GND

TRX1

TRX2

MB3

43

15

MB4

RFIN_M

28

SN

14

SMA-H

NC

SN

13

GND

SN

12
RFIN_L

RFIN_M

41

2
11

SN

VCC2_2

NC

29

VCC1

NC

MB1

J2

VBATT

21

9
10

30

VCC2

AP7219

LB5

LB1

VBATT

C10
1000pF

VIO

20

31

GND

LB2

VIO

J13
SMA-H

B34_39

32

B34_39

SCLK

19

C11
NC

SDATA

18

LB3

SCLK

J14
SMA-H

HB1

33

HB1

17

C12
NC

34

GND

GND

HB2

35

HB2

RFIN_H

LB4

SDATA

SMA-H

J15
SMA-H
36

GND

GND

16

GND

GND

2
RFIN_H

42

U1
1
J1

HB3

TRX2

SMA-H

SN

SN

220pF

C6

22pF

SMA-H
SN

220pF

TRX1

J19

VCC2_2

SMA-H
SN

VCC1

VCC2

J18

HB4

SN

J9
SMA-H

Schematic of AP7219M EVB


Pin Definition of EVB Interface
Pin Number

19

17

15

13

11

Pin Name

VBATT

GND

GND

GND

GND

VCC2_2

VCC2_2

VCC2_2

VCC2_2

NC

Pin Number

20

18

16

14

12

10

Pin Name

VIO

SCLK

SDATA

VCC2

VCC2

VCC1

VCC1

VCC2_2

VCC2_2

NC

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 29 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module

AP7219M EVB
Bill of Material of AP7219M EVB
Component

Description

C3, C6, C9, C13

Capacitor, Ceramic, 22p, COG , +- 5%

C2, C5, C8, C14

Capacitor, Ceramic, 220p, X7R, +- 10%

C1, C4, C7, C15

Capacitor, Ceramic, 10u, X7R, +-10%.

C10

Capacitor, Ceramic, 1000p, X7R, +- 10%

R1, R2

C11, C12

NC

The AP7219M output power is up to 28dBm and the executing frequency is from
700 MHz to 2690 MHz range for 3G and 4G multi-band. The PCB design must be treated
carefully to achieve best RF performance. There are several PCB layout guide-lines and
rules and focus on DC path, thermal conductivity, RF signal.

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 30 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
1. The layout rule and guideline for DC path.
The VBATT and VCC1/VCC2/VCC2_2 is DC power trace for the amplifier, it is
important to put suitable bypass capacitors to improve stability and TX quality of
amplifier. The capacitor on VCC2 trace is recommended of C4, C5, and C6 is 10uF,
220pF, and 22pF respectively, and the distance between capacitors and DUT
should be keep as short as possible, especially the 22pF capacitor is required to
close to DUT. Another capacitor on VBATT, VCC1 and VCC2_2 trace also need to
be placed in the same way.

2. The layout rule and guideline for thermal conductivity


Poor thermal conductivity will degrade RF performance; it is suggested to place
thermal Vias under the amplifier as many as possible to improve thermal
conductivity.

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 31 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD
Multimode Multiband Power Amplifier Module
3. The layout rule and guideline for RF signal
All of RF signals trace which includes RF output trace, RF input trace impedance
has to be 50 ohm, and AP7219M is well matched to 50 for each RF ports; it
doesnt need any external matching components. But it is suggested to reserve
output matching network components in case mismatch cause by interconnection. It
is suggested to place these components close to DUT.

AP7219M Power Amplifier Module


Datasheet
Version 1.0 18-Mar-2016

Confidential for Gionee

Page 32 of 32

CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.