FQPF2N70

FQPF2N70
N-Channel QFET MOSFET

700 V, 2.0 A, 6.3
Description
Features
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
2.0 A, 700 V, RDS(on) = 6.3 (Max.) @ VGS = 10 V,

ID = 1.0 A
Low Gate Charge (Typ. 9 nC)
Low Crss (Typ. 5 pF)
100% Avalanche Tested
G
D
S
TO-220F
S
Absolute Maximum Ratings

Symbol
VDSS
Drain-Source Voltage
ID
Drain Current
TC = 25C unless otherwise noted.

Parameter
FQPF2N70
700
Unit
V
- Continuous (TC = 25C)
2.0*
- Continuous (TC = 100C)
1.3*
8.0*
IDM
Drain Current
VGSS
Gate-Source Voltage
30
EAS
Single Pulsed Avalanche Energy
(Note 2)
140
mJ
IAR
Avalanche Current
(Note 1)
2.0
EAR
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
(Note 1)
2.8
4.5
28
0.22
-55 to +150
mJ
V/ns
W
W/C
C
300
FQPF2N70
4.46
Unit
dv/dt
PD
Power Dissipation
- Pulsed
(Note 1)
(Note 3)
(TC = 25C)
TJ, TSTG
- Derate Above 25C

Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RJA
Thermal Resistance, Junction-to-Ambient, Max.
2003 Fairchild Semiconductor Corporation

FQPF2N70 Rev. C1
62.5
C/W
www.fairchildsemi.com
FQPF2N70 N-Channel QFET MOSFET
November 2013
Part Number
FQPF2N70
Top Mark
FQPF2N70
Package
TO-220F
Electrical Characteristics
Symbol
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
700
--
--
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.4
IDSS
Zero Gate Voltage Drain Current
VDS = 700 V, VGS = 0 V
--
--
10
VDS = 560 V, TC = 125C
--
--
100
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.0 A
--
5.0
6.3
gFS
Forward Transconductance
VDS = 50 V, ID = 1.0 A
--
2.45
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
270
350
pF
--
38
50
pF
--
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 350 V, ID = 2.0 A,

RG = 25
(Note 4)
VDS = 560 V, ID = 2.0 A,

VGS = 10 V
(Note 4)
--
--
30
ns
--
--
80
ns
--
--
50
ns
--
--
70
ns
--
8.1
11
nC
--
1.7
--
nC
--
4.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.0
ISM
--
--
8.0
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 2.0 A
Drain-Source Diode Forward Voltage
--
--
1.4
trr
Reverse Recovery Time
--
260
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/s
--
1.09
--
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 45 mH, IAS = 2.0 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 2.0 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature.

FQPF2N70 Rev. C1
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID , Drain Current [A]
ID, Drain Current [A]
Top :
10
150
0
10
25
-55
Note :
1. 250 s Pulse Test
2. TC = 25
-1
10
Note
1. VDS = 50V
2. 250s Pulse Test
-1
-1
10
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
15
VGS = 10V
12
VGS = 20V
9
10
150 25
Note :
1. VGS = 0V
2. 250s Pulse Test
Note : TJ = 25
-1
10
0.2
0.4
0.6
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
500
1.2
1.4
12
Ciss
300
Coss
200
Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 140V
10
VGS, Gate-Source Voltage [V]
Capacitances [pF]
1.0
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
400
0.8
VSD , Source-Drain Voltage [V]
100
VDS = 350V
VDS = 560V
2
Note : ID = 2 A
0
-1
10
0
0
10
10
10
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics

FQPF2N70 Rev. C1
Typical Characteristics
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250 A
0.8
-100
-50
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 3.1 A
0.5
0.0
-100
200
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation

vs. Temperature
Figure 7. Breakdown Voltage Variation

vs. Temperature
2.0
Operation in This Area
is Limited by R DS(on)
1
1.5
1 ms
10 ms
100 ms
10
10
100 s
DC
-1
10
0.5
Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.0
25
-2
10
10
10
1.0
10
10
50
75
100
125
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current

vs. Case Temperature
ZJC(t), Thermal Response [oC/W]

Z JC(t), Thermal Response
150
D = 0 .5
10
0 .2
N o te s :
1 . Z J C (t) = 4 .4 6 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve

FQPF2N70 Rev. C1
Typical Characteristics (continued)
50K
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
V
10V
GS
GS
ID (t)
VDS (t)
VDD
DUT
tp
tp
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQPF2N70 Rev. C1
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
VGS
( Driver )
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FQPF2N70 Rev. C1
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FQPF2N70 Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FQPF2N70 Rev. C1
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FQPF2N70

N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is

2.0 A, 700 V, RDS(on) = 6.3 (Max.) @ VGS = 10 V,

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

- Continuous (TC = 25C)

- Continuous (TC = 100C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate Above 25C

*Drain current limited by maximum junction temperature.

Thermal Resistance, Junction-to-Ambient, Max.

2003 Fairchild Semiconductor Corporation

FQPF2N70 N-Channel QFET MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 700 V, VGS = 0 V

VDS = 560 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 350 V, ID = 2.0 A,

VDS = 560 V, ID = 2.0 A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2003 Fairchild Semiconductor Corporation

FQPF2N70 N-Channel QFET MOSFET

Package Marking and Ordering Information

ID , Drain Current [A]

ID, Drain Current [A]

VGS , Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR , Reverse Drain Current [A]

Figure 3. On-Resistance Variation vs.

VGS, Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

Ciss = Cgs + Cgd (Cds = shorted)

VSD , Source-Drain Voltage [V]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation

FQPF2N70 N-Channel QFET MOSFET

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]