AOD478/AOI478

100V N-Channel MOSFET

General Description

Product Summary

The AOD478/AOI478 combines advanced trench

MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.

VDS

100V
11A

ID (at VGS=10V)
RDS(ON) (at VGS=10V)

< 140m

RDS(ON) (at VGS = 4.5V)

< 152m

100% UIS Tested

100% Rg Tested

TO252
DPAK

TO251A
IPAK

Top View

Bottom View

Bottom View

Top View

D
D

S
D

Gate-Source Voltage

VGS
TC=25C

Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current

20

V
A

24
2.5

IDSM

TA=70C

Units
V

IDM
TA=25C

Maximum
100
11

ID

TC=100C
C

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
Drain-Source Voltage
VDS

Avalanche Current C

IAS, IAR

10

Avalanche energy L=0.1mH C

TC=25C

EAS, EAR

mJ

Power Dissipation B

TA=25C
Power Dissipation A

Junction and Storage Temperature Range

Rev 1: Nov. 2011

2.1

Steady-State
Steady-State

RJA
RJC

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1.3

TJ, TSTG

Symbol
t 10s

23

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case

45

PD

TC=100C

-55 to 175

Typ
17
55
2.7

Max
25
60
3.3

Units
C/W
C/W
C/W

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AOD478/AOI478

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=250A, VGS=0V

100

Max

1
TJ=55C

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

Gate Threshold Voltage

VDS=VGS ID=250A

1.7

ID(ON)

On state drain current

VGS=10V, VDS=5V

24

Units
V

VDS=100V, VGS=0V

VGS(th)

100

nA

2.2

2.8

116

140

225

270

VGS=4.5V, ID=3A

121

152

17
1

12

VGS=10V, ID=4.5A
RDS(ON)

Typ

Static Drain-Source On-Resistance

TJ=125C

gFS

Forward Transconductance

VDS=5V, ID=4.5A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous CurrentG

DYNAMIC PARAMETERS
Ciss
Input Capacitance

0.76

350

445

540

pF

18

29

35

pF

16

23

pF

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge

10.3

13

nC

Qg(4.5V) Total Gate Charge

5.1

6.5

nC

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

VGS=0V, VDS=50V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=50V, ID=4.5A

VGS=10V, VDS=50V, RL=8.6,

RGEN=3

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time

Qrr

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/s

1.6

nC

2.4

nC

ns

ns

17

ns

4.5
IF=4.5A, dI/dt=500A/s

ns

14.5

21

27.5

68

97

126

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: Nov. 2011

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AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15

15
VDS=5V

10V

4V

12

4.5V

10

9
ID(A)

ID (A)

6V

VGS=3.5V

125C
3
25C
0

0
0

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
180
Normalized On-Resistance

2.6

160
RDS(ON) (m
)

140

VGS=4.5V

120
VGS=10V

2.4
2.2

VGS=10V
ID=4.5A

17
5
2
VGS=4.5V 10

1.8
1.6
1.4
1.2

ID=3A

1
0.8

100
0

6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)

25

50

75

100

125

150

175

200

0
Temperature (C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

280

1.0E+01
ID=4.5A

260

1.0E+00
240

125C

40
1.0E-01
IS (A)

RDS(ON) (m
)

220
200
180

125C

1.0E-02
25C

1.0E-03

160
140

1.0E-04

120

25C
1.0E-05

100
2

6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Rev 1: Nov. 2011

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

700
VDS=50V
ID=4.5A

600

Ciss

500

Capacitance (pF)

VGS (Volts)

400
300
200
Coss

Crss

100
0

0
0

6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics

12

20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics

400

100.0

TJ(Max)=175C
TC=25C

360
10s

10.0

320

10s
RDS(ON)
limited

1.0

100s
DC

0.1

280
Power (W)

ID (Amps)

100

1ms
10ms

17
5
2
10

240
200
160
120

TJ(Max)=175C
TC=25C

80
40

0.0

0
0.01

0.1

1
10
VDS (Volts)

100

1000

0.0001

Z JC Normalized Transient
Thermal Resistance

0.01

0.1

10

Pulse Width (s)

18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)
10

0.001

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJC=3.3C/W

PD

0.1

Ton

0.01
Single Pulse
0.00001
0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 1: Nov. 2011

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AOD478/AOI478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60
TA=25C

Power Dissipation (W)

IAR (A) Peak Avalanche Current

100

TA=100C
TA=150C

10

TA=125C

40
30
20
10

0
1

10
100
Time in avalanche, tA (
s)
Figure 12: Single Pulse Avalanche capability (Note
C)

25

50

75
100
125
150
TCASE (C)
Figure 13: Power De-rating (Note F)

175

10000

15

TA=25C

12

1000
Power (W)

Current rating ID(A)

50

17
5
2
10

100

10
3

0
0

25

50

75

100
125
150
TCASE (C)
Figure 14: Current De-rating (Note F)

0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

0.00001

175

0.001

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJA=60C/W

0.1

PD

0.01

Single Pulse
Ton

0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 1: Nov. 2011

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Page 5 of 6

AOD478/AOI478

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V

+
+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds
90%

+ Vdd

DUT

Vgs

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

E AR = 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT

Vds Isd
Vgs
Ig

Rev 1: Nov. 2011

Vgs

Isd

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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Page 6 of 6