Lect 1

ELEC5180: RF/Microwave Circuit
Design and Measurement

http://course.ee.ust.hk/elec5180
TodaysAgenda
CourseInformation
IntroductiontoRF/microwavecircuitdesign
PassivelumpedRFcomponentsandcircuits
ELEC5180, Kevin Chen, HKUST
Course Information
Instructor
Dr. Kevin J. Chen
Room 2449
Ext. 8969 (office)
Technical Officer
Kowk Wai Chan
Room 3110 (WCL)
Ext. 7082 (office)
eekjchen@ust.hk
eekwchan@ust.hk
TA:
TANG, Xi (xtangaf@ust.hk) and LEI, Jiacheng
(jleiaa@ust.hk)
In Room 3110. office hour: Tuesday, 10:00am - noon
Course Information (cont.)

Lecture: Monday, 15:00-17:50, G003, CYT Building
Lab: Room 3110 (Wireless Communication Lab),
start from Week 5 (Mar. 2nd).
session 1: Wen., 09:00-11:50,
session 2 : Thur., 14:00-16:50,
Textbook: no fixed text book, students should reply on reference books,
lecture notes, lab notes and technical journals available in library
References: (all references have been reserved in the library, 2-hour
check out policy)
1. D. Pozar, Microwave Engineering, J. Wiley and Sons, 3rd Edition, 2004.
2. K. Chang, I. Bahl, and V. Nair, RF and Microwave Circuit and
Component Design for Wireless Systems, J. Wiley & Sons, 2002
3. G. Gonzalez, Microwave Transistor Amplifiers, 2nd Edition, Prentice
Hall, 1997.

Objective:
The student will learn how to derive and understand properties
of various microwave components (both passive and active),
circuits, and learn how to apply these properties for particular
designs
The student will grasp the theoretical foundations and concepts
for specific microwave components, circuits, and systems
The student will learn how to design basic RF/microwave frontend functional blocks using both analytical tools and advanced
computer-aided design tools
The student will, through the lab sessions, develop an intuition
and physical feeling for microwave phenomenon and to get first
hands-on experience with microwaves components and
equipment
Topics:
Introduction to RF/microwave circuit design
Passive lumped elements used in RF/microwave circuits
Transmission line and microwave network analysis
Impedance matching
Active RF devices and linear amplifiers
RF/microwave low noise amplifiers (LNAs): noise, stability
Mixers and detectors
Oscillators
Power amplifiers and large-signal characterization

Marking Scheme:
Homework assignment(15%): there will be one design
homework assignment. Late assignments: two days of grace
period with penalty of 20% per day
Laboratory works and reports (60%): Follow the guideline of
lab report on the web page of this course.
Final project (25%): each group (the same as the one formed
for lab sessions) will choose one of the topics proposed by

the instructor and conduct a complete review. Each team
need to submit a report (single space, font size 12, no more
than 10 pages), and make a 15-20 min oral presentation in
class.
The Driving Force behind RF/Microwave Circuit

Design: wireless communication
Conventionalwirelesscommunications
twowayradio,television,satellitebroadcasting,cordlessphones.
Thelargestwirelessgrowtharea:cellularphones
Handsets:challengesincludepowerefficiency(whenwillmybattery
die?), linearityandcostfornewgeneration(4Gand5G)handsets
withdatacomcapability
Basestations:linearityremainsthemostchallengingrequirement
Anotherconcern:willthiscellphonetransmitterharmmybody?
Otherwirelesssystems
RFID,WiFi,WirelessPowerTransfer,etc.
Otherapplicationareas:Remotesensing,medicaldiagnostics.
Wirelesseverywhere!Goodorbad?
What is special about RF/microwave circuit

design?
Frequency ranges:
Low-frequency: traditional ICs and components, up to 50 MHz.
RF: 50 MHz to 1 GHz
microwave: 1GHz -- 30 GHz
millimeter waves: 30 GHz--300 GHz (=10mm-1mm)
However the distinction between different ranges are blurred.
Microwave components: distributed elements
-- the phase of a voltage or current changes significantly over the
physical extent of the device, i.e. device sizes are in the order of
wavelength
At lower frequency: large wavelength, no phase variation over the
devices physical dimension, lumped-element, R, L, C.
At higher frequency: wavelength shorter than the devices physical
dimension, transmission line theory needs to be introduced.
RF/microwave circuit design requires different way of circuit

analysis: Smith-chart, S-parameters, transmission line, etc.
A Systems Designers View on Dealing with RF Signals

Try to separate and convert the signal to low frequencies as
quickly as possible for low power signal processing
Signals are amplified, filtered and downconverted. The accurate
measurement of absolute value of the signal at RF is almost never
important.
RF signals are almost never compared, A/Dd linearly, multiplied
and divided
Comparison or precise scaling functions such as phase detection
and modulation are restricted to the lower RF range
10
RF signals of interest
Narrowband signal modulated on a high-frequency carrier.
Typically low power, close to the thermal noise level, which is
produced by the temperature of the operating environment.
RF signal power is usually measured in comparison to milliwatts
(mW) and represented in dBm.
Power ( dBm) 10 log

Wireless environment
Power ( mW )
1mW
RF signals strength can vary tremendously because of the

effects of environment (the channel). The signal power commonly
fluctuates as much as 50 to 60 dB. A reliable wireless system
needs to be able to handle such large signal changes without
producing errors --- large dynamic range.
11
Interference
Signals from different sources can interfere with RF signals in
wireless systems. Microwave ovens generate a very substantial,
wideband interference at 2.4 GHz.
There exist co-channel interference (CCI) and nearby channel
interference(adjacent channel interference).
Issues related to interference
Channel selectivity: the ability to reject interference (e.g. filters)
and select the desired channel
Linearity: the ability to reject signals many channel-width away
from the desired channel.
12
RF Front-end (Transceiver)
Architecture: General
considerations
Limited bandwidth allocated to
each user (200 KHz in GSM)
leads to the limited rate of
information --- sophisticated
techniques such as coding,
compression, and bandwidthefficient modulation are needed.
Transmitter --- Narrowband
modulation, amplification, and
filtering to avoid leakage to
adjacent channel
Receiver --- process the desired channel while sufficiently
rejecting strong neighboring interferers.
13
High-Q (quality factor) filters are

required for front-end bandpass
filters
The choice of the BPF is governed

by both the out-of-band rejection
and the in-band loss, with the latter
being the more critical parameter.
Rejection required of a hypothetical

front-end filter
channel width: 30 KHz
attenuation at 45 KHz from the
center: 60 dB
Q for a second-order LC filter: 104
difficult to achieve
14
Difference between the band and the channel

Band includes the entire spectrum in which the users of a
particular standard are allowed to communicate (e.g. the GSM
receive band spans 935MHz to 960MHz).
Channel refers to the signal bandwidth of only one user in the
system (e.g. 200 KHz in GSM).
Due to the high-Q required for channel filtering at RF
frequencies, a practical front-end BPF can only select the band of
interest, postponing the task of channel selection to some other
point in the receiver.
15
Typical duplexer characteristic
Effect of nonlinearity in the front end

Third-order
intermodulation
16
Dynamic range of the signals: Pmax/Pmin, typically 100 dB

Minimum detectable signal: microvolt range, input noise and
cross talk need to be considered.
Desensitization of LNA by PA
output leakage due to cross-talk
between the transmitter and receiver
17
Hetero: different
Heterodyne Transceiver
dyne: to mix
fRF
BPF
f IF f RF f LO
Imagereject filter
Receiver
fLO
transmitter
18
The mixer translates the signal band to much lower frequency so as

to relax the Q required of the channel-select filter.
How are the LO frequency and the IF chosen?
Major concern: the image frequency
Image power can be much higher than that of the desired

signal, requiring proper image rejection--- by image-reject
filter
19
Image rejection by means of a

filter: achieve relatively small loss
in the desired band and a large
attenuation in the image band --fIF needs to be sufficiently large.
The IF is chosen to be high enough to avoid 1/f noise

while low enough so that processing is easy.
The gain at IF is usually very large, and incorporates
an AGC (automatic gain control) to adapt to
fluctuating signal levels.
20
Rejection of image versus suppression of interferers for (a) high

IF and (b) low IF: trade-off between sensitivity and selectivity
High-IF
Low-IF
21
Front-end components a list

For receivers, we require the following elements:
Antennas
Transmission lines to interconnect the antenna and other circuit elements
Impedance matching circuits
RF filters
Low noise RF amplifiers
Frequency converting mixers
Local oscillators, possibly included frequency multipliers and phase-lock
loops
IF filters
IF amplifiers
Demodulators
Nonreciprocal isolators (circulators)
For transmitters, we may also require additional elements:
Power amplifiers
Modulators
Transmit-receive isolating switches and diplexers
22
Some other Wireless Systems

Bluetooth: RF-based (2.4 GHz), short-range
connectivity solution for portable personal devices.
Power consumption of a bluetooth transceiver is less than 3% of a mobile phone.

23
Wireless LAN Systems: provide high-rate data communication over

a small area. Unlicensed.
IEEE 802.11 b, a, and g in the US
HiperLAN in Europe.
Data rate up to 54 Mb/s
3G/4G/5G Cellular Systems: provide high-speed data and

multimedia capability, in addition to voice transmission
RF/microwave system-on-chip or system-on-package components

are keys to the realization of these systems
24
Resonant Circuits and Quality Factor

Various applications: filters, oscillators, frequency meters, and
tuned amplifiers, etc.
microwave resonators of all types can be modelled in terms of
equivalent RLC resonators (either in series or in parallel).
A resonator is a component which exchanges energy between two
or more forms: for electrical circuits, the exchange is between the
magnetic field energy storage and electrical field energy storage.
The energy exchanges takes place most efficiently at one
particular frequency, called the resonant frequency
Q-factor: the total energy stored divided by the loss of energy
during one exchange.
Resonant electrical circuits are often called tank circuits
1. Series Resonant Circuit
25
1
C
The complex power
delivered to the resonator is
Z in R jL j
1
1
1 2
1
2
Pin VI * Z in I I ( R jL j
)
C
2
2
2
1 2
Ploss I R
R: dissipate power
2
1 2
L: store magnetic energy Wm I L
4
1 2
1 2 1
C: store electric energy
We VC C I
4
4 2C
So, we have
Pin Ploss 2 j (Wm We )
26
Then Zin can be written as Z 2 Pin Ploss 2 j (Wm We )

in
2
2
I
I 2
At resonance, Wm = We, then we have Z 2 Ploss R
in
2
I
1
0
and
LC
Where 0 is the
resonant frequency.
At resonance, the
resonator looks like a
short circuit for a
high-Q resonator.
27
(average energy stored)

(energy loss/second)
W We
m
Ploss
Quality factor: Q
Low loss implies higher Q.

For the series resonant circuit
2Wm 0 L
1
Q
0
and at resonance
Ploss
R
0 RC
Q increases as R decreases.
When = o+ and
Q=
0 L
R
Z in R j 2 L R(1 j 2Q
)
28
2. Parallel Resonant Circuit
Z in R jRQ ( BW ) 2 R 2
2
BW
1
Q
At resonance, the resonator

looks like a open circuit for a
high-Q resonator.
29
Parallel resonant circuit (cont)

R
Q
0 RC
0 L
30
Passive components:
Wire: the wire has an finite inductance, conductance and also
exhibits a finite capacitance to ground --- parasitics
31
Wire with ground plane:

A wire close to the ground plane has its inductance reduced by a
mutual inductance M. Mutual inductance is given by
32
Resistor: besides its resistance, parasitics include lead inductance

and contact capacitance.
An approximate equivalent circuit for a

resistor including parasitic elements
For small resistors, the parasitic inductance dominates the parasitic

influence and will cause the impedance to rise at higher frequencies.
For large resistors, parasitic capacitance dominates the parasitic
influence and will cause the impedance to drop at higher frequencies.
33
Ni/Cr, Tantalum Nitride (TaN),

doped semiconductors
Important features: stable resistance, lowtemperature coefficients of resistance,
good heat dissipation capability,
maximum length of less than 0.1 g, low
parasitics.
Problem at high frequencies:
- Increase of resistance due to Skin-Effect
- Inductive reactive component
- Capacitive reactive component
- Resonances (very high frequencies)
34
Capacitor: a dielectric sandwiched by two metal plates

Packaging and material properties are important
A
d
large packages and leads result in parasitic

inductance and can be modeled as an inductance in
series. Loss in the dielectric is modeled as a resistor
parallel to the capacitance.
Applications in circuits
- Determination of resonance frequency in oscillators and frequency filters
- RF-short circuit (very small capacitive reactance)
- DC blocking
35
Some planar capacitor configurations
Self-resonance: generated by the capacitance, along with the

parasitic inductance, the resonance frequency may fall into your
measurement range. A typical SRF (self-resonance frequency) for a
10 pF high-Q ceramic capacitor is in the 2-4GHz range.
36
37
38
Inductor:
For an ideal inductor
N 2 A
l
In reality, 1) large amount of flux leakage, as well as capacitance

between the turns of the inductors exist.
Important specifications: Q-factor, self-resonance frequency,
maximum current.
Chip inductors: based on surface mount technology: air-core
springs (high-Q and high self-resonance), or wound inductors
(low-Q and low self-resonance).
Chip inductors: (a) wound; (b) multilayer; and (c) schematic.

Applications in circuits
39
Some planar inductor

configurations
- Determination of
resonance frequencies in
oscillators and frequency
filters
(same as capacitors)
- Stop for high frequency
(RF) currents (very high
inductive reactance)
used in direct current
supply circuits (choke)
40
Spiral inductors: can be conveniently realized on PCBs and ICs

tend to have low Q due to:
1) the spiral blocks the magnetic flux
2) ground planes, which reduces the inductance, tend to be close by
3) the current crowds to the wire edges, which increases the
resistance.
Typical value for Q:
10 ~ 20 on PCB
5-10 on silicon
Square planar spiral inductor

41
From Chang, Bahl and Nair, page 152
42
RF/microwave Circuit
Manufacturing Technologies
It is always important to reduce components
counts, size, and cost.
PCB, thin and thick film hybrid, low- and
high-temperature cofired ceramic (LTCC),
monolithic integrated circuits, and multiple
chip module.
43
Printed Circuit Board (PCB)

Provide mechanical support and multilevel electrical
interconnections for discrete components.
For RF/microwave applications, need high-performance
and low-cost PCB materials that can provide low-loss
finer lines and narrower spacings for high-density
circuits. Usually, low-loss copper is used as the
conducting metal.
Single-, double-sided or multilayer substrates are
available.
Key parameters of PCBs for RF/microwave
applications: dielectric constant, loss tangent (dielectric
loss), metal thickness and conductivity, coefficient of
thermal expansion, etc.
44

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ELEC5180: RF/Microwave Circuit

Design and Measurement

ELEC5180, Kevin Chen, HKUST

ELEC5180, Kevin Chen, HKUST

Course Information (cont.)

ELEC5180, Kevin Chen, HKUST

Course Information (cont.)

ELEC5180, Kevin Chen, HKUST

Course Information (cont.)

for lab sessions) will choose one of the topics proposed by

The Driving Force behind RF/Microwave Circuit

ELEC5180, Kevin Chen, HKUST

What is special about RF/microwave circuit

RF/microwave circuit design requires different way of circuit

A Systems Designers View on Dealing with RF Signals

Power ( dBm) 10 log

RF signals strength can vary tremendously because of the

ELEC5180, Kevin Chen, HKUST

High-Q (quality factor) filters are

The choice of the BPF is governed

Rejection required of a hypothetical

ELEC5180, Kevin Chen, HKUST

Difference between the band and the channel

ELEC5180, Kevin Chen, HKUST

Typical duplexer characteristic

Effect of nonlinearity in the front end

ELEC5180, Kevin Chen, HKUST

Dynamic range of the signals: Pmax/Pmin, typically 100 dB

ELEC5180, Kevin Chen, HKUST

ELEC5180, Kevin Chen, HKUST

The mixer translates the signal band to much lower frequency so as

Image power can be much higher than that of the desired

Image rejection by means of a

The IF is chosen to be high enough to avoid 1/f noise

ELEC5180, Kevin Chen, HKUST

Rejection of image versus suppression of interferers for (a) high

ELEC5180, Kevin Chen, HKUST

Front-end components a list

For transmitters, we may also require additional elements:

Some other Wireless Systems

Power consumption of a bluetooth transceiver is less than 3% of a mobile phone.

Wireless LAN Systems: provide high-rate data communication over

3G/4G/5G Cellular Systems: provide high-speed data and

RF/microwave system-on-chip or system-on-package components

ELEC5180, Kevin Chen, HKUST

Resonant Circuits and Quality Factor

ELEC5180, Kevin Chen, HKUST

1. Series Resonant Circuit

Then Zin can be written as Z 2 Pin Ploss 2 j (Wm We )

(average energy stored)

Low loss implies higher Q.

2. Parallel Resonant Circuit

At resonance, the resonator

Parallel resonant circuit (cont)

ELEC5180, Kevin Chen, HKUST

ELEC5180, Kevin Chen, HKUST

Wire with ground plane:

ELEC5180, Kevin Chen, HKUST

Resistor: besides its resistance, parasitics include lead inductance

An approximate equivalent circuit for a

For small resistors, the parasitic inductance dominates the parasitic

ELEC5180, Kevin Chen, HKUST

Ni/Cr, Tantalum Nitride (TaN),