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22.There are two kind of the current which flow through transistors:
A. Base current and Emitter current.
B. Collector current and Emitter current.
C. Base current and Collector current.
23.Differential transmitters are used to:
A. Add or subtract angles.
B. Add or subtract two electrical signals.
C. Increase the operating speed of the synchro receiver.
24.Usually the following components are integrated in ICs (Integrated Circuit):
A. Semiconductors (Transistors, Diodes), Resistors.
B. Semiconductors (Transistors, Diodes), Resistors, Capacitors.
C. Semiconductors (Transistors, Diodes), Capacitors.
25.In a FET (Field Effect Transistor), the three terminals are called:
A. Source, Gate, Drain.
B. Emitter, Base, Collector.
C. Source, Base, Drain.
26.The conductive mechanism in a crystal is called bipolar. As the
temperature increase:
A. The number of free charge- carriers decreases.
B. The number of free charge- carriers also increases.
C. The number of free charge- carriers remains the same.
27.The higher the temperature the higher the intrinsic conductivity will be in:
A. Forward direction of a semiconductor.
B. Reverse direction of a semiconductor.
C. Both forward direction and reverse direction of a semiconductor.
28.If semiconductors are designed for high currents:
A. Their cross-sectional area must be wider and their housing must be
bigger.
B. Their cross-sectional area must be wider and their housing must be
smaller.
C. Their cross-sectional area must be narrower and their housing must be
smaller.
29.For a semiconductors, the more heat can be dissipated if:
A. The narrower the housing.
B. The larger the housing.
C. No housing.
30.For the single crystal semiconductor diodes. The depletion zone forms at
the junction and the semiconductor blocks the charge:
A. If the positive pole of a current is in the n-zone and the negative pole is
in the p-zone.
B. If the negative pole of a current is in the n-zone and the positive pole is
in the p-zone.
C. If the positive pole of a current is in both the n-zone and the p-zone.
31.For the single crystal semiconductor diodes. The depletion zone breaks
down and semiconductor diode will let the current through the junction.
A. With the negative pole in the p-zone and the positive in the n-zone.
B. With the negative pole in the n-zone and the positive in the p-zone.
C. With the positive pole in the p-zone and the n-zone.
32.A silicon diode, when compared to a germanium diode has:
A. A higher threshold voltage.
B. The same threshold voltage.
C. Less threshold voltage.
33.A germanium diode: