Beruflich Dokumente
Kultur Dokumente
MICROMACHINING
Dr. V.K.JAIN
MECHANICAL ENGINEERING DEPARTMENT
I.I.T KANPUR- 208016
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
e-mail
: vkjain@IItk.ac.in
Kanpur
(vkjain@iitk.ac.in)
ACKNOWLEDGEMENT
ORGANISATION
Introduction
Vishwas N Kulkarni
Department of Physics, IIT Kanpur
v ION
BEAM
MACHINING
(IBM):
MOLECULAR
MANUFACTURING PROCESS BASED ON THE SPUTTERING
OFF PHENOMENON.
-MATERIAL REMOVAL TAKES PLACE IN THE FORM
OF REMOVAL OF ATOM OR MOLECULE FROM THE
SURFACE OF THE WORK-PIECE.
v THE PROCESSES CAN BE APPLIED TO THE MANUFACTURING OF
ULTRA-FINE PRECISION
MECHANICAL DEVICES.
PARTS
OF
ELECTRONIC
AND
Microfabrication
Micromilling
microcutting
Assembling
Focused ion beams has become finest possible drill machine ever possible
and it can create of the smallest brick as structural element
Ion Beam
Backscattered ions and/or
Nuclear Reaction products
Sputtered ions
Electrons
Note:
Not all effects are completely separable and this may lead
to unwanted side effects for a specific application.
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
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Sputtering Yield
Ion Incident angle dependence
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Ion Beam
(Ga+ 3-30 KeV)
Spot size 7 nm
Scan Generator
for SEM
SED/SID
Monitor
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Ion Column
Mass separator is a setup that allows only
the required amount of ions with a fixed
mass-charge ratio to pass through.
Below the mass separator there is a long
and thin drift tube, which eliminates the
ions that are not directed vertically.
The lower objective lens helps in
reducing the spot size of the beam and in
improving focus.
Finally there is the electrostatic beam
deflector which controls the final landing
location of the ions.
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
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Ion Sources
Liquid metal ion source
Liquid
metal
Extraction
Voltage
Extraction
Voltage
Ions
Liquid
metal
Ions
Ions
Type of ion
source
Ion species
Virtual
Source size
(nm)
Energy
spread, E
(eV)
Unnormalized
brightness
(A/cm2sr)
Angular
brightness
(A/sr)
Liquid metal
Ga+
50
>4
3 x 106
50
H+, H2+,He+,
Ne+ _ _ _
0.5
~1
5 x 109
35
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LMIS Consists of a
capillary tube with a needle through
it
an extraction electrode and
a shielding.
Capillary acts as a reservoir that feeds
the metal to the tip.
Heated Ga flows and wets the needle having tip radius 2-5 m.
A suppresser voltage [electric field (108 V/cm)] applied to the end of the
wetted tip that causes the liquid Ga to form a point source (2-5 nm tip) in the
shape of Taylor cone.
Conical shape forms because of electrostatic and surface tension force
balance.
An extraction voltage pulls
Ga
from
and
Dr. V.
K.Jain,
Mech. the
Engg. tip
Deptt.,
I.I.T. efficiently ionizes it by field
18
Kanpur (vkjain@iitk.ac.in)
evaporation of the metal at the end of the Taylor cone.
FIB Deposition
Enhanced Etching
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FIB Milling
SUBSTRATE
Nano-scale Milling
Note: There are other variants of
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FIB Deposition
Focused Ion Beam
Scan
Volatile products
Gas Nozzle
Precursor
Gas Molecules
Deposited film
SUBSTRATE
Nanoscale Deposition
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WORKING PRINCIPLE OF
ION BEAM MACHINING
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2.
ACTIVATION OF A CHEMICAL
REACTION OF THE GAS
MOLECULES WITH THE
SUBSTRATE BY THE ION- /
ELECTRON- BEAM
3.
GENERATION OF VOLATILE
REACTION- PRODUCTS :
GACl3 SICl4 SIF4
4.
EVAPORATION OF VOLATILE
SPECIES AND SPUTTERING OF
NON-VOLATILE SPECIES
Available on CrossBeams:
XeF2, H2O
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ADSORPTION OF THE
PRECURSOR
MOLECULES ON THE
SUBSTRATE
2.
3.
DEPOSITION OF THE
MATERIAL / METAL
ATOMS AND
REMOVAL OF THE
ORGANIC LIGANDS
W, Pt
SiO2
Tungsten wall
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
Tungsten deposition
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SUBSTRATE
Nanoscale Milling by FIB
Typical material removal rate is about 1m3 per second.
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
25
Volatile products
produced by ion impact
Gas Nozzle
Precursor
Gas Molecules
Deposited film
SUBSTRATE
Nanoscale Deposition by FIB
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
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FIB alone
FIB / GIS
Ion Milling
Enhanced
etching
Ion Implantation
Selective
etching
Ion deposition
(difficult to achieve)
Material
deposition
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MAJOR SECTIONS:
1. PLASMA SOURCE CHAMBER GENERATES IONS BY THE ELECTRIC
DISCHARGE IN A LOW VACUUM (13 MPa) OF ARGON, KRYPTON, HELIUM,
OR OXYGEN GAS.
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50 nm size holes
patterned on a thin film
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EDS - Detector
Inlens - Detector
CCD camera
& illumination
SE - Detector
LEO 1540XB equipped with FIB and a gas injection system for 5 different gases
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Stage control
Dual joystick or optional
hardware control panel
36
APPLICATIONS
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SEM Imaging
38
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Micromachining
STM TIPS
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Micro-rotor
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50 nm size holes
patterned on a thin film
48
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Reversible Bending
(a)
1 m
(c)
1 m
Piecewise Bending
(b)
1 m
2
3
4
Tripathi, Shukla, Kulkarni Nanotechnology 2008
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PARAMETRIC ANALYSIS
* SURFACE FINISH
* MATERIAL REMOVAL RATE
* SURFACE TEXTURE
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MACHINING CHARACTERISTICS
V ( ) 576109
S ( )
cos
n
(m/h)/(mA/cm2)
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ANGLE OF INCIDENCE :
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ION ENERGY :
THE SPECIFIC SPUTTER-MACHINING RATES INCREASE LINEARLY
WITH THE AMOUNT OF ION ENERGY AT ANY ANGLE OF THE INCIDENT
ION. (SEE NEXT FIGURE)
60
THE NUMBER OF ATOMS KNOCKED OUT BY THE INCIDENT IONS FROM THE TWO OR THREE
ATOMIC LAYERS INCREASES WITH THE INCREASE IN THE ENERGY OF THE INCIDENT IONS
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IMPLANTATION EFFECT.
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
62
CURRENT DENSITY :
v
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SURFACE FINISH
IN
ION BEAM MACHINING
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GRAIN
SIZE
DEPENDENCE
OF
THE
SURFACE ROUGHNESS (MIYAMOTO.1993)
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ANGLE OF INCIDENCE :
AFTER AN INITIAL INCREASE, AN INCREASE IN ANGLE OF
INCIDENCE SURFACE ROUGHNESS , DUE TO INCREASE IN THE
MATERIAL REMOVAL RATE.
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PROBABILITY
OF
COLLISION BETWEEN THE
INCIDENT
IONS
AND
SPUTTERED
ATOMS
BECOMES LARGER WITH
INCREASING ION CURRENT
DENSITY THAT
CAUSES
IRREGULAR
MACHINING
ON THE SURFACE.
EFFECT OF CURRENT DENSITY ON
SURFACE ROUGHNESS AT DIFFERENT
ION ENERGIES (SHIMAT.,1990)
68
SURFACE
ROUGHNESS
INITIALLY REMAINS CONSTANT
UPTO THE MACHININ DEPTH
OF APPROXIMATELY 30 nm
AS THE MACHINING
PROGRESSES,
LARGE
GRAIN STRUCTURE ARE
EXPOSED
THEREFORE
SURFACE
ROUGHNESS
VALUE INCREASES.
SURFACE ROUGHNESS INCREASES BY ARGON ION
BEAM MACHINING FOR SKD-1 ( SHIMAT.,1990)
Dr. V. K.Jain, Mech. Engg. Deptt., I.I.T.
Kanpur (vkjain@iitk.ac.in)
69
WCGB=>tungsten
carbide gauge block,
grain size 2-3 m
WCFG=>tungsten
carbide chips, grain
size 0f 0.5 m.
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DUE TO UNIFORMLY
CHANGING OF INCIDENT
ANGLE OF THE IONS,
ADJACENT GRAINS OF
TUNGSTEN
CARBIDE
WILL BE ERODED WITH
THE SAME AVERAGE
RATE, AND THE GRAINS
OF THE COBALT AND
TUNGSTEN
CARBIDE
WILL ALSO BE ERODED
WITH
NEARLY
THE
SAME RATE.
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E=10 kev
73
CONCLUSIONS
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THANK YOU
7
5
ION BEAMS
Engineering
Analysis
Rutherford Backscattering
Channeling
Proton and Heavy Ion
Induced X-ray Emission
Resonant Scattering
Nuclear Reactions
Forward Scattering
(Elastic Recoil)
Ion Beam Induced
Charge Microscopy
Ion Implantation
Tribology
Ion Beam Mixing
Lithography
Deposition by cracking of
molecules under ion impact
Micro and nano machining and
fabrication of microcomponents
Size and shape control of nano
Structures
Ion Beam Sculpting
Radiation bystander effects
(single ion irradiation effects in
biological cells)
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Electron Optics
Operating principle of the Gemini column
Beam path with no
intermediate cross over
UEx
Electromagnetic
aperture changer
U0
Condenser lens
In-lens SE-detector
Beam booster
FEATURES
UL
Magnetic lens
Scan coils
Electrostatic lens
Specimen
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USE OXYGEN ION BEAM FOR THE MATERIAL TO QUICKLY FORM FINE
GRAINED OXIDE LAYER . OXYGEN IONS ARE LIGHTER THAN ARGON
IONS.
work-piece (SKD-1)
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Electron Optics
Operating principle of the Gemini column
Beam path with no
intermediate cross over
UEx
Electromagnetic
aperture changer
U0
Condenser lens
In-lens SE-detector
Beam booster
FEATURES
UL
Magnetic lens
Scan coils
Electrostatic lens
Specimen
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