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International Journal of Electronics and

Communications (AE)
journal homepage: www.elsevier.com/locate/aeue

A design method for substrate integrated waveguide electromagnetic bandgap

(SIW-EBG) lters
Serkan Simsek a,,1 , Sasan Ahdi Rezaeieh b
a
b

Department of Electronics and Communications Engineering, Istanbul Technical University, Maslak 34469, Istanbul, Turkey
Department of Electrical and Electronics Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran

a r t i c l e

i n f o

Article history:
Received 14 May 2012
Accepted 23 May 2013
Keywords:
Substrate integrated waveguide
electromagnetic bandgap lter
SIW-EBG lter design

a b s t r a c t
An efcient design method for substrate integrated waveguide electromagnetic bandgap (SIW-EBG)
lters is proposed which provides direct dimensional synthesis approach for desired lter objectives
without using network representations. The method is applied to the design of an X band SIW-EBG lter
and its response is compared with HFSS (high frequency structure simulator) simulations for validation
purposes. Fairly good agreement between the results shows the applicability of the proposed method for
SIW-EBG lter design.
2013 Elsevier GmbH. All rights reserved.

1. Introduction
Substrate integrated waveguides (SIWs) are a kind of dielectric
loaded waveguides which are comprised of metalized via holes in
a planar dielectric substrate material. Substrate integrated waveguides cannot be considered as ideal homogeneous rectangular
waveguides due to the fact that the solid metalized via-holes on
the side walls of rectangular waveguides. However, modeling of
SIW-EBG lters as an ideal waveguide structures will be good
approximation which can subsequently be fed into a full-wave
design environment in order to tune the design for meeting design
objectives effectively.
Substrate integrated waveguide (SIW) lters are preferred to
planar lters in certain microwave and millimeter wave applications due to their high quality factor and compact size. SIW lters
provide high power handling capability with low loss and low cost,
and also they are easily integrated with planar structures [13]. In
particular, they can be easily realized by using standard fabrication
processes, such as multilayer printed circuit board (PCB), low temperature co-red ceramics (LTCC) and other thick lm techniques.
SIW lters are being used in a wide range of frequencies. These
lters are appropriate solutions for low loss receiver lters in KaBand satellite ground terminals [4]. An inductive post lter design
was proposed in [1] for SIW with a 1 GHz bandwidth centered
at 28 GHz. Proposed lter in [1] has an insertion loss 1 dB in the
passband (2527 GHz) and return loss better than 17 dB for chosen

Corresponding author. Tel.: +90 212 285 36 24; fax: +90 212 285 36 79.
E-mail addresses: simsekser@itu.edu.tr (S. Simsek), ahdi@ieee.org
(S.A. Rezaeieh).
1
Member, IEEE.

RT/Duroid 5880 substrate (r = 2.2, tan = 0.0009) with a height of

0.787 mm. Two fourth-order lters based on oversized SIW cavities
with a passband of 19.221.2 GHz were fabricated on a single layer
Rogers RT/Duroid 6002 substrate (r = 2.94, tan = 0.0012) with a
height of 0.508 mm using metalized via holes in [4]. Designed lter
given in [4] has an insertion loss less than 1 dB in 19.221.2 GHz
and stopband attenuation better than 50 dB in 29.530 GHz.
Cross-coupled bandpass lter using SIW has been proposed with
complementary split ring resonators (CSRRs) in [5]. The proposed
lter in [5] has a central frequency 3.5 GHz and fractional bandwidth 6% with 15 dB return loss. Taconic RF-30 substrate (r = 3.3,
tan = 0.0014) with thickness of h = 1 mm was used in [3]. The diameters of the metallic via-holes in the SIW structures are 0.775 mm,
0.5 mm and 0.9 mm in [1,4,5], respectively.
Extended doublet BPF is proposed in [6] using only one dualmode SIW cavity with a complementary split ring resonator (CSRR)
etched on its top metal plane. On the other hand, the defected
ground structure (DGS) was introduced in the design of SIW lters
[7], and its resonant frequency was higher than the counterpart of
SIW cavity. Combline lters have been extensively used in metallic
waveguide technology for implementing compact size lters [8].
Modeling of SIW-EBG lters directly in electromagnetic design
environments takes considerable amount of time and hence
dimensional optimization process becomes very inefcient if not
intractable. Classical lter design procedure for periodic lters
is based on network representation of unit cell and a mapping
between network elements and unit cell parameters [9]. Recently
an extremely rapid and versatile lter design methodology, is presented in [10] for electromagnetic bandgap based waveguide lters
with periodic dielectric loading. The lter design method in [10] is
based on direct dimensional synthesis of the unit cell starting from
given design objectives without using network representations in

1434-8411/$ see front matter 2013 Elsevier GmbH. All rights reserved.
http://dx.doi.org/10.1016/j.aeue.2013.05.009

Please cite this article in press as: Simsek S, Rezaeieh SA. A design method for substrate integrated waveguide electromagnetic bandgap (SIW-EBG)
lters. Int J Electron Commun (AE) (2013), http://dx.doi.org/10.1016/j.aeue.2013.05.009

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where
=

Z2 Z1
Z2 + Z1

(3)

Zi =


i = 1, 2
i

(4)

Fig. 1. Conguration for (a) the SIW-EBG lter and (b) unit cell (dimensions: post
diameter d, pitch s, width Asiw ).

the design process. This paper presents application of equations

given in [10,11] as novel design equations for SIW-EBG lters and
demonstrates both the validity and the applicability of the proposed method for SIW-EBG lters.
2. Analysis and design of SIW-EBG lters
The conguration for the proposed SIW-EBG lter and its unit
cell (UC) are shown in Fig. 1a and b. The UC geometry in Fig. 1b
can be analyzed using scattering matrix representations. As a rst
approximation S parameters are obtained by neglecting higher
order mode interactions and considering only a single (dominant)
mode. The exact generalized S parameters may then be obtained
using a suitable full-wave method or mode-matching approach
[11,12].

SIW unit cell can be modeled approximately using the model

transmission line network for the dominant mode (TE10 ) as shown
in Fig. 2. In this case, scattering matrix of the unit cell can be easily
formulated and rapidly calculated.
Scattering matrix of reciprocal and symmetric SIW-UC for input
and output reference planes (rpi , rpo ) can be expressed in terms
of junction scattering matrices (SJA and SJB ) and junction reection
coefcient ()

S JA = (1 + )

Z1 /Z2

Z2 /Z1

Z2 /Z1

(1 + )

S JB = (1 )

(1 )

Z1 /Z2

(1)

(2)

i = 1, 2

Ai

(5)

Z1 , Z2 and 1 , 2 are modal impedances and propagation constants

of the dominant mode for each waveguide region, respectively.
Determination of (Z1 , Z2 ) and (1 , 2 ) via Eqs. (4) and (5) involves
rectangular waveguide dimensions (A1 , A2 ) relative dielectric constant (r ), and operating frequency (f). Eqs. (4) and (5) are used
in calculating impedances and propagation constants for the
dominant mode of waveguide sections with conducting walls as
expressed in [13]. SIW-UC includes H-plane step discontinuity
(change in width, A) along x-axis in a rectangular waveguide. Rectangular waveguide dimensions of ideal SIW-UC are A1 B, A2 B,
JA
JA
JA
JA
JB
JB
A2 < A1 where B is the height of SIW. S11 , S12 , S21 , S22 and S11 , S12 ,
JB

JB

S21 , S22 are sub-elements of SJA and SJB . Scattering matrix of reciprocal and symmetric SIW-UC for z = 0 and z = p+ reference planes
are found as

JA

S11 +

JB

JA

JA

JB

ej22 S21 S11 S21

JA

S11 =

S21 =

2.1. Transmission line model of ideal SIW unit cell

  2

k02 r

i =

ej21

1 ej22 S22 S11

JB

JA

ej2 S21 S21

JA

(6)

JB

1 ej22 S22 S11

ej21

(7)

where  i i = 1, 2 are the electrical lengths of each waveguide region.

2.2. Modal analysis of ideal SIW unit cell
We consider a periodic arrangement of entirely dielectric loaded
sections along axial direction in a rectangular waveguide, as shown
in Fig. 2. It is assumed a symmetric unit cell with period p = 2p1 + p2
and waveguide is excited by the dominant TE10 mode from the left,
therefore TEm0 high order modes will be created due to H-plane
step discontinues at the junctions of SIW-UC. Under these conditions it is sufcient to use mode matching technique involving
only the TEm0 type modes in waveguide sections. Thus, the generalized scattering matrix (GSM) referred to reference planes z = 0
and z = p+ as shown in Fig. 2 can be determined via application of the
standard mode-matching technique (see [11,12] for details). When
N waveguide modes are considered in modal analysis generalized
scattering matrix yields a 2N by 2N matrix which can be partitioned
into N by N sub-matrices as,

S11

SUC = S21

S12

S22

(8)

2.3. Design equations of SIW-EBG lters

Band edge frequencies of a periodic symmetric SIW-UC can be
accurately estimated without applying Floquet condition and solving the resulting eigenvalue equation via the condition in [10,11]

X = 2Im{S S,+N }
Fig. 2. Top view of symmetric unit cell of SIW-EBG lter.

N


|S,k S,k+N |2 = 0

(9)

k=M+1

Please cite this article in press as: Simsek S, Rezaeieh SA. A design method for substrate integrated waveguide electromagnetic bandgap (SIW-EBG)
lters. Int J Electron Commun (AE) (2013), http://dx.doi.org/10.1016/j.aeue.2013.05.009

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where Sij denote the elements of the GSM and the subscript 
represents the input port corresponding to the rst (dominant)
propagating waveguide mode. N is the total number of modes used
in the GSM representation, M and NM are numbers of propagating
and evanescent modes in the SIW-UC. Eq. (9) includes high order
mode interaction in periodic structure and only requires generalized scattering matrix of SIW-UC in Eq. (8). Accurate determination
of unit cell dimensions can be achieved by observing zero crossing
of complex power stored in unit cell by even (X+ ) and odd (X )
modes given in (9) over the frequency range of interest for considered parameter set of p1 and p2 . On the other hand, approximate
determination of unit cell dimensions can be achieved via reduced
form of Eq. (9) obtained by [10,11] considering transmission line
model equivalency only for the dominant mode (N = M = 1,  = 1)
X = 2Im{S1,1 S1,2 } = 0

(10)

Eq. (10) considers only dominant mode without higher order mode
interaction and use scattering matrix elements in Eqs. (6) and (7).
The reduced transmission line model in [10] can be used for calculating unit cell dimensions very rapidly. However, the frequency
characteristic of the resulting lter contains some deviations from
design objectives. Modal analysis with (9) determines band edge
frequencies with an error less than 0.1% when periodic structure
supports a single propagating Floquet wave for the frequency range
of interest as expressed in [11].
2.4. Design procedure of SIW-EBG lters
To design SIW-EBG lters following design procedure should be
used: (i) choose appropriate waveguide dimensions to support only
the dominant mode within the interested frequency region and a
suitable symmetric unit cell geometry (exp. Fig. 2). (ii) Using (10)
determine the unit cell dimensions approximately for desired lter
characteristics and reduce design space of parameters. (iii) Using
(9) determine the unit cell dimensions accurately in the reduced
design space or skip step ii and apply (9) directly for interested
design space. (iv) Calculate the response of the ideal perfect wall
waveguide lter for K cascaded unit cells and increase K until design
objectives are satised. v. Replace perfect side walls of rectangular
waveguide with vias of SIW (Asiw ) and enlarge ideal rectangular
waveguide wide wall (A1 ) in the neighborhood of the empirical
relation Asiw = A1 + d2 /(0.95 s) and simulate SIW-EBG lter in full
wave design environments considering effect of via posts.
2.5. Design of SIW-EBG lters
In order to demonstrate application of the proposed design
equations, we consider the design of an X-band lter which will
suppress 9.810.8 GHz frequency band by more than 20 dB. Taconic
TLT substrate (r = 2.5) with a height of 0.50 mm is chosen for X
band SIW-EBG lter. Waveguide dimensions which support only
the dominant mode are determined as A1 = 14.8 mm, A2 = 0.7A1 for
given design objectives. At this step modal impedances and propagation constants are easily obtained over the frequency range
of interest for both transmission line model and modal analysis. Applying design procedure for chosen symmetric unit cell in
Fig. 2, we determined (p1 = 0.38A1 , p2 = 0.165A1 , K = 10) for desired
SIW-EBG lter. The amplitude response of the rectangular waveguide lter with ideal perfect walls obtained via mode matching
method (MM) is given in Fig. 3 together with results obtained using
HFSS. For the nal step, we considered effect of via posts choosing d = 0.5 mm, which resulted in 0.2 mm modication in the wide

Fig. 3. Calculated amplitude response of the SIW-EBG lter.

wall, i.e. Asiw = A1 +0.2 mm = 15 mm. The response of SIW-EBG lter

obtained using HFSS for s/d = 1.5 is also given in Fig. 3. Fig. 3 shows
that the SIW-EBG lter design objectives are met, and demonstrates
a fairly good agreement between the response and design objectives.
3. Conclusion
A design method for SIW-EBG lters is proposed as a direct
dimensional synthesis approach. Agreement of proposed method
and our simulation results via HFSS for designed SIW-EBG lters
show the validity and applicability of the method. It should be
emphasized that the proposed method is restricted to SIW-EBG
lter design having symmetric unit cells.
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Please cite this article in press as: Simsek S, Rezaeieh SA. A design method for substrate integrated waveguide electromagnetic bandgap (SIW-EBG)
lters. Int J Electron Commun (AE) (2013), http://dx.doi.org/10.1016/j.aeue.2013.05.009