GT15Q102

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT15Q102
High Power Switching Applications

Third-generation IGBT

Enhancement mode type

High speed: tf = 0.32 s (max)

Low saturation voltage: VCE (sat) = 2.7 V (max)

Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristic

Symbol

Rating

Unit

Collector-emitter voltage

VCES

1200

Gate-emitter voltage

VGES

20

DC

IC

15

1 ms

ICP

30

PC

170

Tj

150

JEDEC

Tstg

55~150

JEITA

Collector current
Collector power dissipation
(Tc = 25C)
Junction temperature
Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1C
temperature/current/voltage and the significant change in
Weight: 4.6 g
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Marking

TOSHIBA

GT15Q102

Part No. (or abbreviation code)

Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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Electrical Characteristics (Ta = 25C)
Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGES

VGE = 20 V, VCE = 0

500

nA

Collector cut-off current

ICES

VCE = 1200 V, VGE = 0

1.0

mA

VGE (OFF)

IC = 1.5 mA, VCE = 5 V

4.0

7.0

VCE (sat)

IC = 15 A, VGE = 15 V

2.1

2.7

VCE = 50 V, VGE = 0, f = 1 MHz

850

pF

Inductive Load

0.05

VCC = 600 V, IC = 15 A

0.12

VGG = 15 V, RG = 56

0.16

0.32

0.56

0.74

Gate-emitter cut-off voltage

Collector-emitter saturation voltage
Input capacitance

Switching time

Cies
Rise time

tr

Turn-on time

ton

Fall time

tf

Turn-off time

toff

Thermal resistance

(Note1)

Rth (j-c)

C/W

Note1: Switching time measurement circuit and input/output waveforms

VGE
GT15Q301

90%
10%

VGE
IC

RG

IC

VCC

90%

VCE
0

VCE

10%

10%

td (off)

90%
10%
td (on)

10%
tr

tf
toff

ton

Note2: Switching loss measurement waveforms

VGE

90%
10%

IC

VCE

10%

Eoff

Eon

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IC VCE

VCE VGE

50

20

VCE (V)

Common emitter

20

15

30

Collector-emitter voltage

Collector current IC

(A)

40

10
20
VGE = 9 V
10
Common emitter
Tc = 25C
0

Collector-emitter voltage

Tc = 40C
16

12

30

15
4

IC = 6 A

0
0

VCE (V)

Gate-emitter voltage

VCE (V)

16

Collector-emitter voltage

VCE (V)
Collector-emitter voltage

VGE (V)

Common emitter

Tc = 25C

12

8
30
IC = 6 A

15

12

Gate-emitter voltage

16

Tc = 125C
16

12

IC = 6 A

VGE (V)

16

20

VGE (V)

VCE (sat) Tc
4

Common emitter

Collector-emitter saturation voltage

VCE (sat) (V)

40

30

20

25

Tc = 125C

30

Common emitter

VCE = 5 V

0
0

12

Gate-emitter voltage

IC VGE

10

30

15

0
0

20

50

(A)

20

20
Common emitter

Collector current IC

16

VCE VGE

VCE VGE
20

12

40

12

Gate-emitter voltage

16

VGE = 15 V
3
15

0
60

20

VGE (V)

IC = 6 A

20

20

60

100

140

Case temperature Tc (C)

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Switching time

ton

0.1

tr

0.05
0.03

0.01
3

10

30

50

Gate resistance

Switching time

Switching time toff, tf (s)

100

RG

Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
: Tc = 25C
: Tc = 125C

10

30

50

100

15

20

(A)

toff, tf IC

Common emitter
VCC = 600 V
VGG = 15 V
RG = 56
: Tc = 25C
: Tc = 125C
toff

0.5
0.3

tf

RG

0.05
0

300

()

10

Eon
Eoff

1
0.5
0.3

10

30

50

Gate resistance

100

RG

10

Switching loss

Eon, Eoff RG

Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
: Tc = 25C
: Tc = 125C
Note2

15

Collector current IC

Eon, Eoff (mJ)

Switching loss

Eon, Eoff (mJ)

10

0.1

Switching loss

Switching loss

Switching time

toff

Gate resistance

0.1
3

0.1

0.03

toff, tf RG

tf

tr

0.05

Collector current IC

0.3

10

ton
0.1

()

0.5

0.05
3

0.3

0.01

300 500

ton, tr IC

Common emitter
VCC = 600 V
VGG = 15 V
RG = 56
: Tc = 25C
: Tc = 125C

0.5

(s)

0.3

Switching time
1

Switching time toff, tf (s)

Switching time ton, tr

(s)

0.5

ton, tr RG

Common emitter
VCC = 600 V
VGG = 15 V
IC = 15 A
: Tc = 25C
: Tc = 125C

Switching time ton, tr

()

Eon, Eoff IC

Common emitter
VCC = 600 V
VGG = 15 V
RG = 56
: Tc = 25C
: Tc = 125C
Note2

5
3

1
Eoff

0.5
Eon

0.3

0.1

300 500

10

Collector current IC

20

(A)

15

20

(A)

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C VCE

VCE, VGE QG
1000

3000

20

300

100
Common emitter
30

Coes

VGE = 0
f = 1 MHz
Tc = 25C

10
1

600
600
400

16

10

30

100

300

200

0
0

1000

40

VCE (V)

80

Safe operating area

Reverse bias SOA

DC
operation

1 ms*

10 ms*

*: Single
nonrepetitive pulse
Tc = 25C
0.5 Curves must be
0.3 derated linearly with
increase in
temperature.
0.1
1
3
10
30
1

Transient thermal impedance

Rth (t) (C/W)

10
10
10

10
5
3

1
0.5
0.3

Tj <
= 125C
VGE = 15 V
RG = 56

100

Collector-emitter voltage

10

(A)

50 s*
100 s*

Collector current IC

(A)
Collector current IC

30

10

10

0
200

160

50

50 I max (pulsed)*
C
30
IC max (continuous)

10

120

Gate charge QG (nC)

100

10

VCE = 200 V

Cres

Collector-emitter voltage

10

12

400

VGE (V)

RL = 40
800 Tc = 25C

Gate-emitter voltage

Capacitance C

(pF)

Cies

VCE (V)

1000

Collector-emitter voltage

Common emitter

300

1000

0.1
1

3000

VCE (V)

10

30

100

Collector-emitter voltage

300

1000

3000

VCE (V)

Rth (t) tw

3
Tc = 25C
2
1
0

1
2
3
4
10

10

10

10

Pulse width

10

tw

10

10

10

(s)

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RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2006-11-01