Wideband Amplifiers Webcast KB

Solving Telecommunication
Multiband Operation Needs

with Wideband Amplifiers
KAGAN KAYA
Applications Engineer - RFMG
7/15/2015
Agenda
Agenda
Why Wideband?
Wideband Amplifiers Applications, WB Amplifiers on RF Signal

Chain
Narrowband vs Wideband
Selected Wideband Amplifier Offerings
Key Performance Parameters of Wideband Amplifiers
Biasing challenges for Wideband Applications
Q&A
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Why Wideband?
Continuous increase on data transfer needs
We used to send SMS to each other

Now we share HD videos even broadcast live!
Hence higher data rate required
Which means wider instantaneous bandwidth
Different frequency bands are allocated for telecommunication standards that address similar applications
PtP Telecommunication Infrastructure Backhaul bands.
12 different Microwave bands covering 6 to 43 GHz

Millimeter bands. V band and E band
Many military applications cover multi octave bands

ECM, RWR, SIGINT, Wideband Links, Multiband Radios, etc.
2 to 18 GHz, 0.5 to 18 GHz, 2 MHz to 6 GHz
Wider frequency coverage on Test and Measurement market

LF to 70+, 110+ GHz Signal/Spectrum Analyzers, VNAs, Signal Sources
Optical communication data rate can reach 56+ Gbps, which requires 28+ GHz BW
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Typical PtP Microwave Link Block Diagram
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Typical T&M Instrument Block Diagram
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Narrowband
Requires usage of multiple amplifiers to cover different frequency bands
More external passive components

More biasing circuits, LDOs or isolation passives in between amplifier supplies
Increased cost, part count, complexity
Reduced reliability
Additional attenuators, equalizer may be needed to deal with flatness

Switching elements introduce additional loss
And sometimes nonlinearity at the output switching
Which may lead to passive combining techniques, that can increase cost
Wideband
A wideband amplifier covers all frequency bands
Or Multiple wideband amplifiers for ultra WB but still less part count
Less external passive components

Simpler biasing circuits, LDOs or isolation passives in between amplifier supplies
Reduced cost, part count, complexity
Increased reliability
Some applications may still require narrowband amplifiers due to application

requirements like,
High Pout
Low NF
Etc.
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Wideband Amplifiers on Web

Wideband
RF/MW Amplifiers on Analog Website
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Selection of Wideband Amplifiers

Selected ADI
Wideband PAs. P1dB vs. Freq.
Selected ADI
Wideband LNAs. NF vs. Freq.
LNAs
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Drivers
PAs
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Key Parameters for Wideband Amplifiers

HMC1126
2-50 GHz Wideband PA
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What to look for when choosing Wideband Amplifiers
Frequency
Wideband to cover 1 wide application band or more than 1 narrow application bands
Pout, Psat, P1dB, PXdB

Psat, max available output power
As any device driven beyond its linear operating range,
the output signal will deviate from the expected value.
P1dB is the point where the gain deviates by 1 dB from
the expected value. This is also known as power handling
capability.
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13

GaAs 2 to 50 GHz Wideband PA example HMC1126
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IP3 & IP2

OIP3(dBm) = IIP3(dBm) + Gain(dB)
Better IP3 means better ACPR performance
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HMC1126 - 2 to 50 GHz Wideband PA
IP3
OIP3(dBm) = IIP3(dBm) + Gain(dB)
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NF
Since LNA is the 1st gain element in a receiver system, its noise contribution is critical
PA`s are usually at the end of the signal chain; hence negligible noise contribution
Some customers can ask about NF info for PAs. Synthesizer systems etc.
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NF
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Gain, Reverse Isolation, I/O match 50 ohm, S-par
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20

Power Consumption
Idd vs Vgg, vs Performance Parameters like P1dB, IP3
Gate current vs Pin
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Wideband Amplifiers GaAs vs GaN
GaAs currently dominates wideband amplifier market; but this can change
GaN Wideband Amplifiers

Advantages
Gallium nitride is a wide bandgap material; hence higher drain voltages.
This increases the transistors impedances relative to LDMOS and GaAs.
Broadband Power, highest available in today`s world.
Higher tolerance to open and short circuited outputs, as well as operation into high VSWR
loads. This is advantageous for applications where use of a circulator is not feasible. An
example is when a multi-octave amplifier is used to directly drive a broadband antenna.
Higher Junction Temperature.
Disadvantages
Reliability concerns are declining, significant improvement in the last decade
The principal disadvantage of GaN is cost.
Most GaN HEMTs are produced on silicon carbide substrates, which are both costly and limited in
size. But SiC is a great heat spreader, which helps higher RF Power reach.
GaN HEMTs grown on silicon substrates potentially offer substantial cost savings over ones grown
on silicon carbide. The drawback is reduced thermal conductivity of silicon substrates, which limits
the power density of the transistor.
GaN costs reduce as production volumes increase
GaN can also have die size advantage to GaAs, which helps to reduce cost
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GaN
Wideband Amplifier Offerings from ADI
GaN enables unbeatable broadband power
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23

A GaN Wideband Power Amplifier Example HMC1087 & HMC1087F10
ECCN: 3A001.b.2.c
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GaN 2 to 20 GHz Wideband PA example HMC1087F10
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Key Parameters for Wideband Amplifiers - A GaN Wideband PA Example
GaN HEMTs exhibit a soft power compression characteristic.
LDMOS FETs and GaAs MESFETs typically exhibit gains identical to their small signal gains over most of their drive
range.
When producing the rated output power, the gain typically drops by 1dB. This is called the P1dB output power. Output
power will saturate at a power approximately 1dB greater than P1dB, while the gain will have typically decreased by 3dB
compared to the small signal gain.
Where, GaN HEMTs driven even 10dB below their rated output power will exhibit a decrease in gain compared to the
small signal gain.
Which results in a lower value for P1dB than the rated power might indicate.
GaN HEMT output powers are therefore usually specified where the gain drops by 3dB or P3dB.
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Pin vs RF Parameters
Pout, Gain, PAE, Power dissipation

PA`s Contribution(!) is an important percentage of the whole systems`. It can exceed 70 percent for some
applications.
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Bias vs RF Parameters
RF performance can change significantly with bias settings
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30

Absolute Maximum Ratings
Not a typical operating region
Generally backed-off for longer operation
Operating Temperature
Channel Temperature
GaAs 150 C, 175 C
GaN 225 C
MTTF
Thermal Resistance
Tchannel to Package GND paddle
Tr * Pdiss + Ta = Tj
4.24 * 33 + 85 = 224.92 C
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Biasing Wideband Amplifiers

Biasing Wideband RF/Microwave Amplifiers
Different frequency bands can have different requirements defined by industry standards
Output Power
ACPR, IP3
Different bands may require different RF settings due to environmental factors

Higher Pout due to higher attenuation at some frequencies
Different
bands may require different RF performance defined by

system level design requirements
Wideband gain flatness, gain equalization
Harmonic, spur level adjustment related to output power
Active
biasing amplifiers and adjusting bias settings in the fields can

improve multiband performance
By adjusting Vgg, Idd can be set to different values; hence adjustable Gain,
P1dB, Psat, IP3, NF performance for different bands.
Flat gain over wide frequency range
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Biasing RF Amplifiers A Wideband PA example
Biasing changes RF performance
Different
bias conditions can be used to implement wideband
designs
33

The cascode distributed amplifier uses a fundamental cell of two FETs in series,
source to drain. This fundamental cell is then duplicated a number of times. The
major benefit is an increase in the operation bandwidth.
HMC463
HMC637ALP5
HMC907
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.
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Biasing RF Amplifiers and Amplifier protection
In order not damage the AMP a specific biasing sequence should be
followed, below FAQ question on EZ describes typical bias sequencing
Q6: What is the recommended biasing sequence?

A6: Non self-biased amplifiers have a note below the electrical spec table saying,
``* Adjust Vgg1 between -`X` to `Y` V to achieve Idd = `Z` mA typical``
The recommended power up biasing sequence is as follows.
Set Vg1 to -X value.
Set Vdd to the typical Vdd value given on the DS.
Set Vg2 to the typical Vdd value given on the DS (Avoid this step if you are using a resistive divider for Vg2, in
between Vdd and GND).
Increase Vg1 to achieve typical Idd value given on the DS.
Reverse order for the power down.
FAQ on
``Hittite Microwave RF/MW Amplifiers from ADI``
https://ez.analog.com/docs/DOC-11963
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Biasing RF Amplifiers
Mainly 2 biasing strategies
Constant Vgg; hence variable Idd
Variable Vgg for constant Idd
+
Why not a simple resistive divider for Vgg?
Part to Part variations due to process
Temperature variations
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Biasing RF Amplifiers - Active Bias Controllers from ADI
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Biasing RF Amplifiers - Active Bias Controllers from ADI
Pin vs Igg and Pin vs Idd for 3 SNs
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Biasing RF Amplifiers An application Circuit for biasing
HMC637(A)LP5 wideband PA with HMC980LP4 Active Bias Controller
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Biasing RF Amplifiers
We`ve
covered 2 options for biasing strategy
Constant Vgg; hence variable Idd

Variable Vgg for constant Idd
3rd more complex approach

Again constant Idd with variable Vgg
But different Idd levels for different field scenarios like,
Change Idd (by varying Vgg) for different Pout levels for better power consumption
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Biasing RF Amplifiers - Different Idd set points
Sample Solution
DUT AMP is characterized for different Pout, Idd vs Temperature levels

Sometimes a lookup table can be used for adjusting DAC settings
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Biasing RF Amplifiers - Different Idd set points
2 different ADI Solutions
Active Bias Controller Family
ADC / DAC integrated bias controller family
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Summary
Topics
we have covered.
Why Wideband?
Wideband Amplifiers Applications, WB Amplifiers on RF Signal

Chain
Selected Wideband Amplifier Offerings
Key Performance Parameters of Wideband Amplifiers
Biasing challenges for Wideband Applications
www.analog.com/RF
44
Links
Visit
FAQ on RF/MW Amplifiers at
https://ez.analog.com/docs/DOC-11963
ADI website to check latest RF/MW products from ADI

www.analog.com/RF
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45
Thank You For Watching!
View Additional Webcasts at

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Solving Telecommunication

Multiband Operation Needs

Wideband Amplifiers Applications, WB Amplifiers on RF Signal

Selected Wideband Amplifier Offerings

Key Performance Parameters of Wideband Amplifiers

Biasing challenges for Wideband Applications

Continuous increase on data transfer needs

We used to send SMS to each other

12 different Microwave bands covering 6 to 43 GHz

Many military applications cover multi octave bands

Wider frequency coverage on Test and Measurement market

Typical PtP Microwave Link Block Diagram

Typical T&M Instrument Block Diagram

Requires usage of multiple amplifiers to cover different frequency bands

More external passive components

Additional attenuators, equalizer may be needed to deal with flatness

Less external passive components

Some applications may still require narrowband amplifiers due to application

Wideband Amplifiers on Web

RF/MW Amplifiers on Analog Website

Selection of Wideband Amplifiers

Wideband PAs. P1dB vs. Freq.

Wideband LNAs. NF vs. Freq.

Selection of Wideband Amplifiers

Selection of Wideband Amplifiers

Key Parameters for Wideband Amplifiers

2-50 GHz Wideband PA

Key Parameters for Wideband Amplifiers

Pout, Psat, P1dB, PXdB

Key Parameters for Wideband Amplifiers

Pout, Psat, P1dB, PXdB

Key Parameters for Wideband Amplifiers

Pout, Psat, P1dB, PXdB

Key Parameters for Wideband Amplifiers

IP3 & IP2

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Wideband Amplifiers GaAs vs GaN

GaN Wideband Amplifiers

GaN Wideband Amplifiers

Wideband Amplifier Offerings from ADI

GaN enables unbeatable broadband power

GaN Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

GaN HEMTs exhibit a soft power compression characteristic.

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Key Parameters for Wideband Amplifiers

Pout, Gain, PAE, Power dissipation

Key Parameters for Wideband Amplifiers

RF performance can change significantly with bias settings

Key Parameters for Wideband Amplifiers

Not a typical operating region

Generally backed-off for longer operation

GaAs 150 C, 175 C

Tchannel to Package GND paddle

Biasing Wideband Amplifiers

Different bands may require different RF settings due to environmental factors

bands may require different RF performance defined by