QFET

TM

FQP27P06
60V P-Channel MOSFET
General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.

-27A, -60V, RDS(on) = 0.07 @VGS = -10 V

Low gate charge ( typical 33 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175C maximum junction temperature rating

S
!

G!

TO-220

G DS

FQP Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)

IDM

Drain Current

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

dv/dt
PD
TJ, TSTG
TL

- Pulsed

FQP27P06
-60

Units
V

-27

-19.1

-108

25

(Note 2)

560

mJ

(Note 1)

-27

(Note 1)

12
-7.0
120
0.8
-55 to +175

mJ
V/ns
W
W/C
C

300

(Note 1)

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

Typ
--

RCS

Thermal Resistance, Case-to-Sink

0.5

--

C/W

RJA

Thermal Resistance, Junction-to-Ambient

--

62.5

C/W

2001 Fairchild Semiconductor Corporation

Max
1.25

Units
C/W

Rev. A2. May 2001

FQP27P06

May 2001

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

-60

--

--

--

-0.06

--

V/C

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = -250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = -250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

VDS = -60 V, VGS = 0 V

--

--

-1

VDS = -48 V, TC = 150C

--

--

-10

Gate-Body Leakage Current, Forward

VGS = -25 V, VDS = 0 V

--

--

-100

nA

Gate-Body Leakage Current, Reverse

VGS = 25 V, VDS = 0 V

--

--

100

nA

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = -250 A

-2.0

--

-4.0

RDS(on)

Static Drain-Source
On-Resistance

VGS = -10 V, ID = -13.5 A

--

0.055

0.07

gFS

Forward Transconductance

VDS = -30 V, ID = -13.5 A

--

12.4

--

--

1100

1400

pF

--

510

660

pF

--

120

155

pF

ns

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = -30 V, ID = -13.5 A,

RG = 25
(Note 4, 5)

VDS = -48 V, ID = -27 A,

VGS = -10 V
(Note 4, 5)

--

18

45

--

185

380

ns

--

30

70

ns

--

90

190

ns

--

33

43

nC

--

6.8

--

nC

--

18

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

-27

ISM

--

--

-108

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = -27 A
Drain-Source Diode Forward Voltage

--

--

-4.0

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = -27 A,
dIF / dt = 100 A/s

(Note 4)

--

105

--

ns

--

0.41

--

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 , Starting TJ = 25C
3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Elerical Characteristics

FQP27P06

Typical Characteristics

10

10

VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V

10

10

-I D , Drain Current [A]

-I D, Drain Current [A]

Top :

175

25

10

-55

Notes :
1. VDS = -30V
2. 250 s Pulse Test

Notes :
1. 250 s Pulse Test
2. TC = 25

10

-1

-1

10

10

10

10

10

-VGS , Gate-Source Voltage [V]

-VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.24

10

0.16
VGS = - 10V
0.12
VGS = - 20V
0.08

0.04
Note : TJ = 25

0.00

-I DR , Reverse Drain Current [A]

RDS(on) [ ],
Drain-Source On-Resistance

0.20

10

10

175

25

Notes :
1. VGS = 0V
2. 250 s Pulse Test

-1

10

20

30

40

50

60

70

80

90

100 110 120 130

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-ID , Drain Current [A]

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature

12

3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd

10

Coss

Capacitance [pF]

2000

Ciss

Notes :
1. VGS = 0 V

1500

2. f = 1 MHz

1000

Crss
500

0
-1
10

-V GS , Gate-Source Voltage [V]

2500

VDS = -30V
8

VDS = -48V

2
Note : ID = -27 A

0
0

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2001 Fairchild Semiconductor Corporation

10

15

20

25

30

35

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A2. May 2001

(Continued)

2.5

1.2

2.0

1.1

RDS(ON) , (Normalized)
Drain-Source On-Resistance

-BV DSS , (Normalized)

Drain-Source Breakdown Voltage

FQP27P06

Typical Characteristics

1.0

Notes :
1. VGS = 0 V
2. ID = -250 A

0.9

0.8
-100

-50

50

100

150

1.5

1.0

Notes :
1. VGS = -10 V
2. ID = -13.5 A

0.5

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

30
Operation in This Area
is Limited by R DS(on)

25

100 s
1 ms

-I D, Drain Current [A]

-I D, Drain Current [A]

10

10 ms
1

DC

10

10

Notes :
o

1. TC = 25 C

20

15

10

2. TJ = 175 C
3. Single Pulse
-1

10

10

0
25

10

10

50

100

125

150

175

Figure 10. Maximum Drain Current

vs. Case Temperature

D = 0 .5
N o te s :
1 . Z J C ( t ) = 1 . 2 5 /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )

0 .2
0 .1
10

-1

0 .0 5

PDM
0 .0 2
0 .0 1

t1

10

t2

s in g le p u ls e

JC

( t) , T h e r m a l R e s p o n s e

Figure 9. Maximum Safe Operating Area

10

75

TC, Case Temperature []

-VDS, Drain-Source Voltage [V]

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

-10V

300nF

VDS

VGS

Qgs

Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

t on

VDD

VGS
RG

td(on)

VGS

t off
tr

td(off)

tf

10%

DUT

-10V

VDS

90%

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS

tp

ID
RG

VDD
DUT

-10V
tp

2001 Fairchild Semiconductor Corporation

VDD

Time
VDS (t)

ID (t)
IAS
BVDSS

Rev. A2. May 2001

FQP27P06

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+
VDS
DUT

I SD
L
Driver
RG

VGS

VGS
( Driver )

I SD
( DUT )

Compliment of DUT
(N-Channel)

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

Body Diode Reverse Current

IRM
di/dt
IFM , Body Diode Forward Current

VDS
( DUT )

VSD

Body Diode
Forward Voltage Drop

VDD

Body Diode Recovery dv/dt

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Package Dimensions

TO - 220

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

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LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H2