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March 1996

NDP7050 / NDB7050
N-Channel Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel enhancement mode power field effect 75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V.
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated
process is especially tailored to minimize on-state temperature.
resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need
withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor.
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC 175°C maximum junction temperature rating.
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and High density cell design for extremely low RDS(ON).
resistance to transients are needed. TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.

_______________________________________________________________________________

Absolute Maximum Ratings TC = 25°C unless otherwise noted


Symbol Parameter NDP7050 NDB7050 Units
VDSS Drain-Source Voltage 50 V
VDGR Drain-Gate Voltage (RGS < 1 MΩ) 50 V

VGSS Gate-Source Voltage - Continuous ± 20 V


- Nonrepetitive (tP < 50 µs) ± 40
ID Drain Current - Continuous 75 A
- Pulsed 225
PD Maximum Power Dissipation @ TC = 25°C 150 W
Derate above 25°C 1 W/°C
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TL Maximum lead temperature for soldering 275 °C
purposes, 1/8" from case for 5 seconds

© 1997 Fairchild Semiconductor Corporation NDP7050.SAM Rev. D


Electrical Characteristics (T C = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS Single Pulse Drain-Source Avalanche VDD = 25 V, ID = 75 A 550 mJ
Energy
IAR Maximum Drain-Source Avalanche Current 75 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V
IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 250 µA
TJ = 125°C 1 mA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.8 4 V
TJ = 125°C 1.4 2.1 3.6
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A 0.01 0.013 Ω
TJ = 125°C 0.015 0.023
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 75 A
gFS Forward Transconductance VDS = 10 V, ID = 37.5 A 15 39 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, 2960 3600 pF
f = 1.0 MHz
Coss Output Capacitance 1130 1600 pF
Crss Reverse Transfer Capacitance 380 800 pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on) Turn - On Delay Time VDD = 30 V, ID = 75 A, 17 30 nS
Turn - On Rise Time VGS = 10 V, RGEN = 5 Ω 128 400 nS
tr
tD(off) Turn - Off Delay Time 54 80 nS

tf Turn - Off Fall Time 90 200 nS

Qg Total Gate Charge VDS = 48 V, 100 115 nC


ID = 75 A, VGS = 10 V
Qgs Gate-Source Charge 14.5 nC
Qgd Gate-Drain Charge 51 nC

NDP7050.SAM Rev. D
Electrical Characteristics (T C = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current 75 A
ISM Maximum Pulsed Drain-Source Diode Forward Current 225 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) 0.9 1.3 V
TJ = 125°C 0.84 1.2
trr Reverse Recovery Time VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs 80 150 ns
Irr Reverse Recovery Current 2 4.8 10 A
THERMAL CHARACTERISTICS

RθJC Thermal Resistance, Junction-to-Case 1 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W


Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP7050.SAM Rev. D
Typical Electrical Characteristics

120 2 .5
VGS = 2 0 V 1 0 8 .0
7 .0 V GS = 5 .0 V 5.5
I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
100
6 .5 6 .0
2
6.5

R DS(on) , NORMALIZED
80
6 .0

60 1 .5 7.0

5 .5
8.0
40
10
5 .0 1
12
20
20
4 .5
4 .0
0 0 .5
0 1 2 3 4 5 0 20 40 60 80 100 120
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRA IN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate


Voltage and Drain Current.

2 1 .8
I D = 40A VGS = 10V TJ = 125°C
1.8
V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

1 .6
DRAIN-SOURCE ON-RESISTANCE

1.6
R DS(ON), NORMALIZED

R DS(on) , NORMALIZED

1 .4
1.4

1.2 1 .2

1 25°C
1
0.8

0 .8
0.6 -55°C

0.4 0 .6
-5 0 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120
TJ , JUNCTION TEM PERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain


with Temperature. Current and Temperature.

60 1 .2
V DS = 10V VDS = VGS
GATE-SOURCE THRESHOLD VOLTAGE

1 .1
50 ID = 250µA
T = -55°C
I D , DRAIN CURRENT (A)

J 1
V GS(th) , NORMALIZED

40
125°C
25°C 0 .9
30
0 .8

20
0 .7

10 0 .6

0 0 .5
2 3 4 5 6 7 -5 0 -25 0 25 50 75 100 125 150 175
V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEM PERATURE (°C)

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with


Temperature.

NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)

1 .15 100
50
DRAIN-SOURCE BREAKDOWN VOLTAGE

I D = 250µA V GS = 0V

I S , REVERSE DRAIN CURRENT (A)


1 .1 10

TJ = 1 2 5 ° C
BV DSS , NORMALIZED

1 .05
1 25°C
-5 5 ° C

1
0.1

0 .95
0.01

0 .9
-50 -25 0 25 50 75 100 125 150 175 0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORW A RD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage
Temperature. Variation with Current and Temperature.

5000 20

Ciss ID = 75A
VGS , GATE-SOURCE VOLTAGE (V)
3000 V DS = 1 2 V
15
2000
CAPACITANCE (pF)

48V

Coss
1000 10 24V

500 f = 1 MHz
5
V GS = 0V
Crss
300

200 0
1 2 5 10 20 30 60 0 25 50 75 100 125 150
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

VDD t on t off
t d (o n ) tr t d (off) tf
V IN RL 90% 90%

D V OUT
VOUT
VGS 10% 10%
R GEN DUT
INVERTED
G 90%

V IN 50% 50%
S
10%

PULSE WIDTH

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)

60 300
it
100
VDS = 1 0 V Lim µs
TJ = -55°C
, TRANSCONDUCTANCE (SIEMENS)

N)
50 100 R DS(O
1m
s
25°C

I D , DRAIN CURRENT (A)


40 30
10m
s
125°C 100
ms
30 10 DC

20 3 V GS = 20V
SINGLE PULSE
o
10 1 R θJC = 1 C/W
T C = 25°C
FS
g

0 0.3
0 10 20 30 40 50 60 1 2 3 5 10 20 30 50 100
I D , DRA IN CURRENT (A) V DS , DRA IN-SOURCE VOLTAGE (V))

Figure 13. Transconductance Variation with Figure 14. Maximum Safe Operating Area.
Drain Current and Temperature.

D = 0.5
0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.3
0.2 R θJC (t) = r(t) * RθJC
0.2 R θJC = 1.0 °C/W
0 .1
0.1
0 .0 5 P(pk)

0.0 5 t1
0 .0 2
t2
0.0 3
0 .0 1 TJ - T C = P * RθJC (t)
0.0 2
Duty Cycle, D = t 1 /t2
Single Pulse

0.0 1
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIM E (m s)

Figure 15. Transient Thermal Response Curve.

NDP7050.SAM Rev. D
TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing


Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
45 unit s per Tube made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
12 Tubes per Bag These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.

530mm x 130mm x 83mm


Intermediate box
2 bag s per Box

Conduct ive Plasti c B ag

TO-220 Packaging FSCINT Labe l samp le


Information: Figure 2.0 FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B
LOT: CBVK741B019 QTY: 1080
1080 uni ts maxi mum
TO-220 Packaging Information
quant it y per bo x
NSID: FDP7060 SPEC:

Standard
Packaging Option S62Z
(no f l ow code )
D/C1: D9842 SPEC REV: B2
Packaging type Rail/Tube BULK QA REV:

Qty per Tube/Box 45 300


FSCINT Label (FSCINT)
Box Dimension (mm) 530x130x83 114x102x51
Max qty per Box 1,080 1,500
Weight per unit (gm) 1.4378 1.4378

Note/Comments

TO-220 bulk Packing


Configuration: Figure 3.0
An ti-stati c
530mm x 130mm x 83mm
FSCINT Label Bubbl e Sheet s
Intermediate box

1500 uni ts maxi mum


quant it y per intermediate box
300 units per 5 EO70 boxe s per per
EO70 box Interm ediate Bo x

114mm x 102mm x 51mm


EO70 Immed iate Box FSCINT Label

TO-220 Tube
0.123
Configuration: Figure 4.0 +0.001 0.165
-0.003
Note: All dim ensions are in inches 0.080

0.450 0.275
±.030
F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852 F 9852
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
1.300
±.015
0.160
0.032
±.003

20.000
+0.031 0.800
-0.065 0.275

August 1999, Rev. B


TO-220 Tape and Reel Data and Package Dimensions, continued

TO-220 (FS PKG Code 37)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 1.4378

September 1998, Rev. A


TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0

Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
is made from a dissipative (carbon filled) polycarbonate
TNR D ATE resin. The cover tape is a multilayer film (Heat Activated
PT NUMB ER

PEEL STREN GTH MIN ___ __ ____ __ ___gms Adhesive in nature) primarily composed of polyester film,
MAX ___ ___ ___ ___ _ gms

adhesive layer, sealant, and anti-static sprayed agent.


Antistatic Cover Tape These reeled parts in standard option are shipped with
ESD Label 800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
CAUTION box which comes in different sizes depending on the
number of parts shipped.

Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label

F63TNR
Label

Customized
Label FDB603AL FDB603AL FDB603AL FDB603AL
F9835 F9835 F9835 F9835

TO-263AB/D2PAK Packaging Information


Standard
L86Z
TO-263AB/D2PAK Unit Orientation
Packaging Option (no flow code)
Packaging type TNR Rail/Tube
Qty per Reel/Tube/Bag 800 45
Reel Size 13" Dia -
Box Dimension (mm) 359x359x57 530x130x83
Max qty per Box 800 1,080
Weight per unit (gm) 1.4378 1.4378
359mm x 359mm x 57mm
Weight per Reel 1.6050 - Standard Intermediate box
Note/Comments ESD Label

Moisture Sensitive
Label

F63TNR Label sample


F63TNR Label
LOT: CBVK741B019 QTY: 800

FSID: FDB6320L SPEC:


DRYPACK Bag
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
N/F: F (F63TNR)3

TO-263AB/D2PAK Tape Leader and Trailer


Configuration: Figure 2.0

Carrier Tape

Cover Tape
Components
Trailer Tape Leader Tape
400mm minimum or 1520mm minimum or
25 empty pockets 95 empty pockets

September 1999, Rev. B


TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0 P0 D0
T
E1

K0 W
E2
Wc B0

Tc
A0 P1 D1

User Direction of Feed

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

TO263AB/
10.60 15.80 24.0 1.55 1.60 1.75 22.25 11.50 16.0 4.0 4.90 0.450 21.0 0.06
D2PAK +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.10 +/-0.10 min +/-0.10 +/-0.1 +/-0.1 +/-0.10 +/-0.150 +/-0.3 +/-0.02
(24mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.9mm
10 deg maximum maximum

Typical
component
cavity 0.9mm
B0 center line maximum

10 deg maximum component rotation

Typical
Sketch A (Side or Front Sectional View) component Sketch C (Top View)
A0 center line
Component Rotation Component lateral movement
Sketch B (Top View)
2PAK
TO-263AB/D Reel Configuration: Component Rotation
Figure 4.0
W1 Measured at Hub

Dim A
Max
B Min

Dim C

Dim A
max Dim N Dim D
min

DETAIL AA

See detail AA
W3

13" Diameter Option W2 max Measured at Hub

Dimensions are in inches and millimeters

Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
13.00 0.059 512 +0.020/-0.008 0.795 4.00 0.961 +0.078/-0.000 1.197 0.941 – 0.1.079
24mm 13" Dia
330 1.5 13 +0.5/-0.2 20.2 100 24.4 +2/0 30.4 23.9 – 27.4

August 1999, Rev. B


TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK (FS PKG Code 45)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 1.4378

August 1998, Rev. A


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ ISOPLANAR™ SyncFET™


CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOSTM PowerTrench  VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6
HiSeC™ SuperSOT™-8
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D