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. B.Tech/Reg/Even Sem /2012-13 2012-13 PHYSICS OF SEMICONDUCTOR DEVICES PH - 422 ‘Time ~ Three hours Full Marks ~70 ‘Answer any FIVE questions. ‘The figures in the margin indicate full marks. (@) Find the expressions for equilibrium electron and hole concentration in semiconductors. Discuss the temperature dependence of carrier concentrations in semiconductors. (b) Define Fermi level. Discuss the position of the Fermi level in intrinsic semiconductor. 10+4 (@) Draw the energy band diagram for a p-n juniction under zero bias. How does it change when reverse bias is applied? (b) Explain the phenomenon of diffusion of charge carriers in semiconductors. Define diffusion constant. What is Einstein’s relationship? 10+4 (@) Give the construction of a silicon solar cell and explain its working principle, Discuss some of its uses. (b) Explain the working principle of a simple photoconductor. 10+4 (@) Explain the construction and operation of a p-channel FET. What is the difference between an n-channel and a p-channel? (b) What is the difference between a FET and a bipolar transistor 10rd What is polycrystalline silicon? Show that the distribution of dopants in Czochralski technique is not uniform. Mention two mechanisms for uniform dopant distribution in the grown ingot. What is effective segregation coefficient? Deduce the relationship between effective segregation coefficient and equilibrium segregation coefficient. 2444246 What are the common techniques of epitaxial growth? Explain molecular beam epitaxy. Describe lattice matched, strained and unstrained epitaxy growth. What are the defects in epitaxial layers. Qetaed ‘What is Gunn effect? Describe the technique of electron accumulation and electric dipole formation in n-GaAs diode. Calculate the conductivity of GaAs Gunn diode at T = 300K. Given that electron density at lower and upper valley are 10'° cm and 10° om? respectively. Mobility of the electron in lower and upper valley are 8000 om/V- sec and 180 cm*/V-sec respectively. What is the condition of LSA oscillation mode? 3464342 Explain the design technique of 4Kx16 memory using 1Kx8 memory chip. Describe the two dimensional organization of MOS RAM cell. Described the structure and operation of static MOS RAM cell. Z 446 D-93 a ae