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I. INTRODUCTION
Silicon devices have been the epitome of advancements in
technology. These devices are integrated even in the smallest
equipment or devices used at present leading to more researches
for further improvement. One of the basic researches done by
scientists involves the growth and deposition of an oxide layer
on these silicon devices. This was done because the formation
of this oxide layer is one of the key factors in the technological
development of silicon devices. (Van Zant 2004) This oxide
layer is important in silicon technology because of its many
uses and one of which is surface passivation wherein silicon
oxide physically protects the surface of the wafer from
contaminants. This is due to its high density and hardness.
Silicon dioxide also shows its surface passivation function by
protecting the device from electrically active contaminants
(ions). Being a doping barrier is another function of silicon
dioxide. Doping is one of the primary processes in
semiconductor fabrication which requires hole creation in the
surface layer. These holes act as entry point of the dopants.
Prevention of the dopants from reaching the silicon surface is
done by the silicon dioxide layer. Lastly, silicon dioxide acts
both as surface and device dielectric. Since dielectrics do not
conduct electricity, they are considered as insulators which
prevent the silicon wafer from experiencing the phenomenon
known as shorting. (Van Zant 2004)
Though the silicon dioxide layer is necessary in silicon
device fabrication because of its innate properties, method of
development onto the silicon device is still considered in order
to manipulate the layers properties. There are two ways of
(EQ. 1)
(EQ. 2)
II. METHODOLOGY
A. Materials
Commercially available methanol and deionized water were
used to degrease the pre-cleaned (RCA) Silicon wafers. Water
vapos, oxygen, and nitrogen gas were used to induce formation
and growth of oxide layer. Quartz wafer boats and push rod
were used to load the silicon wafers into the tube furnace. Tube
furnace (Ash with New Separation Muffle) was used to contain
the oxidation reaction.
B. Oxidation Process
Before the pre-cleaned silicon wafers (RCA method during
the previous experiment) were subjected to thermal oxidation,
these wafers were first degreased using methanol and deionized
water and were then dried using lint-free wipes. Afterwards,
each wafer was carefully loaded onto two wafer boats for easier
loading into the tube furnace.
Temperature (oC)
Time
(min.)
700
80
100
900
Inner
Outer
Inner
Outer
Green
YellowGreen
Yellowish
brown
Violet
Violet/Brown
Brown
Violet
Yellowgreen
where,
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