EECS 243 Adv.

IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

EE 243 Advanced IC Layout and Processing

Andrew R. Neureuther

Lecture # 22 Deposition: PVD and Profiles

Physical Vapor Deposition (PVD)
Evaporation Sources
Apparatus geometrical effects
Sputtering
Profile time-evolution
Reading: PDG Chapter 9 Depositon of Thin-Fil ms
www.inst.EECS.Berkeley.EDU/~ee243
Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Physical Vapor Deposition PVD

A material flux deposition from a target source to the
wafer
Profile growth dominanted by flux arrival directions with
some reemission or surface migration
Evaporation (or sublimation)
Pure metals using sufficent temperature to give sufficient
impingment (vapor pressure of few mTorr)
Wafers in dome surrounding source with directional flux

Sputtering
Alloys with different vapor pressures
Hemispherical snow storm

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Evaporation Vapor Pressures

1/ 2

m
REVAP = (k e ) As
T

Pe

ke = 5.83 x 10-2
AS = Area Source in cm2
M = gram-moluclear mass
T = Temperature in oK
Pe = Vapor Pressure in Torr

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Evaporation System

Ver 03/07/04

Sources of
Nonuniformity
1/r2
Cos WAFER
Cos SOURCE

Fixes for Nonuniformity

Source on Sphere
Rotate sub-dome
Rotate Wafer

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Deposition Profile Evolution

Evaporation shadow boundary effects
Maximum angles

Hemispherical sputtering source

Shadowing gives poor step

coverage and less dense material.
Angular arrival produces breadloaf,
and double shadowing gives voids
Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Sputtering
D.C (metals) or r.f. for dielectrics
Target is biased so heavy bombardment
Removed material crosses plasma to wafer after a
few collision 5 mTorr => = 3 mm
Bias and ionized sputtering: Substrate
bombardment and ion bpmbardment
Magenetron: Magnets can help confine and make
plasma density and bombardment higher
Reactive: Ti + N2 = TiN
High temperature: Substrate heated 450 oC

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Sputtering Processes

Ver 03/07/04

Pressure of a few mTorr

=> = few mm.

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Trench Profile Evolution: Hemispherical

0.5 m

1.0 m

Thinning on
sidewall and
bottom

Little sidewall
or bottom
coverage
0.3 m

Hemispherical 45o
For trench width of 1.0 m and
widths of 1.0, 0.5 and 0.3m.

Keyhole

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Sputtering: Hemispherical Source

http://cuervo.eecs.berkeley.edu/Volcano/

Set source
parameters:
45 degrees
Set wafer
topography
parameters:
trench width at
top and bottom
and depth.
Submit
Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Sticking Coefficient
SC =

Ver 03/07/04

FREACTED
FINCIDENT

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

SPEEDIE

McVittie, Stanford
Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

SAMPLE3D

Pattern Transfer: RIE Lag

Deposition: Wet Dip Lift-Off

Toh, Sheckler, Helmsen, Sefler & Neureuther, UCB

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

SIMBAD

Deposition of disks
Local Angle Bisector
Low Density

Brett and Smy, U. Alberta

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Evolve

T. Cale, Az State,
now RPI

Copyright 2004, Regents of University of California

EECS 243 Adv. IC Processing

Spring 2004

Lecture 22: 03/10/04 A.R. Neureuther

Ver 03/07/04

Deposition
methods for
various films

CVD

Low Temperature

PVD

Copyright 2004, Regents of University of California