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Prof. B.
B G. Fernan
ndes
Dep
partment of Electrical E
Engineeringg
India
an Institute of Technoloogy, Bombaay
Leccture No - 9
Hello, in
n my last class we discussed the
t
operatioon of pow
wer MOSFE
ET, metal ooxide
semicond
ductor field effect transistor. It is a very
v
fast devvice, much ffaster than a BJT. There are 3
terminalss similar to our
o BJT. Th
hey are drain
n, gate and soource. Gate is insulatedd from the soource.
There is a SiO2 layer which is an
a insulator. So, the inpuut impedancce or the imppedance bettween
gate and source is veery high and it is mainly
y a capacitor . So, how dooes a currentt flow from drain
to sourcee? When thee applied vo
oltage betweeen gate to source is hiigher than w
what is know
wn as
threshold
d value, N ch
hannel is form
med and wh
hich connectss the drain too source.
(Refer Sllide Time: 2:15)
Now, lett us see the variation of VGS, is a function of charge carried to the gate. O
OA is
correspon
nding to thee charging of the input capacitance
c
Ci under fulll VDS. See, VGS is veryy low,
less than
n the thresho
old value theen there is no
o flow of cuurrent. Whenn there is noo flow of cuurrent,
VDS is veery high. So, OA corresponding to charging
c
of input capacitance Ci unnder full VDSS. VDS
is high, th
herefore, gatte to drain caapacitance iss very low.
So, Ci, th
he input capaacitance whiich is equal to
t CGS plus CGD, now CGGD is very low
w, therefore,, Ci is
approxim
mately equal to CGS, a cap
pacitance beetween gate aand source.
(Refer Sllide Time: 7:34)
Now, AB
B, What is AB?
A AB is it correspondss to VDS decrrease from thhe supply vooltage to VDSS (ON).
Once, thee applied vo
oltage betweeen the gate and the souurce is higheer than the thhreshold, floow of
electronss starts. So, current staarts flowing
g from drainn to source, VDS falls. So, that reegion
correspon
nds to AB, see AB. VGS,
voltage
between
b
gatte and sourcce remains constant and the
G
charge su
upplied is used to vary the voltage across CGD , gate to draain. Now, I told you, seee the
voltage is falling from the full voltage, full rated
r
voltage to DS on. So, as the vvoltage falls from
the full voltage
v
to thee on state vo
oltage, CGD goes
g
on increeasing.
s
is used
u
to chargge the capaccitor and thiss BC correspponds
So, whattever the chaarge that is supplied
to the inp
put capacitan
nce charge when
w
the dev
vice is on. N
Now, what is the input ccapacitance w
when
the devicce is on? It is
i CGS plus CGD (ON). Du
uring on, CGGD is high. S
So, this is coorrespondingg to a
device on
n
Similarly
y, the chang
ge in voltagee with the ch
harge or durring turn offf, E to F foor the removval of
excess ch
harge, F to H is corressponding to discharge oof CGD. Youu are turningg off the deevice.
Voltage across the MOS is increasing. In other w
words, VDS is increasiing. So, thhis is
nding to thee discharge of
o CGD and HJ is corressponding to the dischargge during cuurrent
correspon
fall, CGS discharge. See,
S these wave forms we
w require w
while designinng or while studying thee turn
on and tu
urn off of MOS.
M
So, I will just show
w you how poower MOS IIRF640 is m
mounted on a heat
sink.
(Refer Sllide Time: 11:11)
See, the parameters. This data I got it from their site. ID at 25 degreees, continuuous drain cuurrent
VGS is 10 volts, max
ximum is 18
8 amperes, gate to sourrce is plus oor minus 200 volts. See here,
RDS(ON) iss 0.18 ohm, it is mention
ned here very
y clearly.
(Refer Sllide Time: 11:42)
So see, here
h are the major
m
differeences between a BJT annd a MOSFE
ET that I havve summarizzed. It
looks like, exact for on state volttage drop orr on state po wer loss, M
MOSFET has an edge oveer the
BJT.
7:41)
(Refer Sllide Time: 17
So, BJT has an exceellent on statte characteriistics. The pproblem withh that is a ccurrent contrrolled
device. So,
S if you compare
c
BJT
T and a MO
OSFET, theyy almost coomplement eeach other. Input
power requirement fo
or a MOSFE
ET is very lo
ow, BJT has higher. It is a current coontrolled devvice. I
a
PT, ppower transiistor.
told you that a small PT is requirred to drive another
Now, can
n we combine this both
h the devicess, the advanntages of botth the devicces and com
me out
with the new
n device, what is kno
own as IGBT
T. See here, iinsulated gatte bipolar traansistor, IGB
BT. It
was deveeloped in 1983 by Jayant Baliga, verry popular ddevice in pow
wer electroniics, very poppular.
Prior to the
t advent off IGBT, BJT
T was used. It
I was very ppopular, mayy be till the 11990s or so, BJT
is very popular. As IGBT started
d coming to the market, the populariity of the BJJT started cooming
down. So
o, what is th
his IGBT? In
nsulated gatee: almost sam
me as the M
MOS. There is a SiO2 layyer, bi
polar tran
nsistor, output is a BJT.
(Refer Sllide Time: 20
0:07)
10
Now, com
ming to the VI characteristics, how do they loo k? They loook similar too BJT. Only thing
is, contro
ol parameterr is gate to source
s
voltag
ge, almost ssimilar to a B
BJT, a steepp rise. So, dduring
conductio
on RDS is low
wer, RDS (ON)) is lower, I told
t
you. Seee here, I justt redrawn thhem, drain cuurrent
verses VDS
BT.
D for a MOS, for an IGB
(Refer Sllide Time: 25
5:06)
for IGBT
T is less com
mpared to MOS.
M
What iis the reasonn? The reasoon for havingg low
So, RDS (ON)
(
RDS (ON) in the case of IGBT, I will tell yo
ou some tim
me later. Onne more thinng that had to be
d from the strructure, see here,
h
we had
d a drain whhich is P pluss and N plus and N minuus.
observed
11
Do we need to have these 2 N laayers? Whatt if there is nno N plus laayer? What w
will happen?? The
operation
n of IGBT will
w not get effected
e
becaause there is N minus layyer always tthere. But thhen, it
will mak
ke a significaant differencce in reversee voltage bloockage capaability of thee IGBT. If P plus
and N pllus are preseent, like, wh
hat I showed
d you in thee beginning, both are heeavily dopedd and
when it is reverse biaased or in otther words, when
w
I am cconnecting nnegative term
minal to drainn, the
positive to
t source, J1 should block the negativ
ve voltage.
Now sincce, both of th
hem are heaavily doped, negative bloocking voltaage capabilityy of this sorrt of a
IGBT is low. The IG
GBT which has
h P plus N plus N minnus layer is aalso known aas punch thrrough
IGBT.
12
13
14
15
So, if I compare
c
a no
on punch thrrough IGBT
T and a puncch through IG
GBT, a puncch through IIGBT
has N pllus layer. So
o, compared
d to a non punch
p
througgh IGBT, a punch throough IGBT hhas a
smaller taail current, almost
a
similaar to a GTO there.
6:08)
(Refer Sllide Time: 36
16
It is the same
s
as thatt of MOSFE
ET. There arre only 3 zonnes: ID, TJ mmax and CD llimit. There is no
secondarry break dow
wn zone as in
i the case of
o IGBT. Soo, IGBT is a device which has almoost all
the good qualities off BJT as welll as a MOS, except the iincrease in tuurn of time. Now, becauuse of
the minority carriers,, turn off is not
n as fast ass a MOS. Soo, that is abouut the IGBT.
(Refer Sllide Time: 00
0:37:51)
I will jusst show you a module, a 75 amperee, 1200 voltts dual IGBT
T. Dual, I m
mean, there are 2
IGBTs and
a this is a diode conn
nected acrosss it. The sw
witching timee of this diode is compaarable
with the IGBT itself.. This is not a body diod
de, unlike in a MOS, rem
member. So, these 3 term
minals
are correspond to 1 2 3 and thesee 2, 1 and 2,, 1 and 2, thee control terrminals, gatee and source, gate
and sourcce. A common heat sink
k can mount on,
o a 75 amppere, 1200 vvolts IGBT.
BT does requ
uire a driverr circuit and that driver ccircuit shoulld have the pprotection ccircuit
This IGB
also. Say
y, 1 way to protect
p
a BJT
T from overr current prootection, I diiscussed in m
my last classs. So,
driver cirrcuit also sh
hould have, in
i a BJT, it should able to supply a high currennt during staarting.
So, you require
r
a sep
parate driver circuit to co
ontrol the IG
GBT.
mart power modules.
m
W
What are theyy? That moduule has the ppower
There aree something known as sm
module, the power devices
d
plus the driver circuit
c
plus tthe protectioon circuit, evverything is built
in. You do
d not need to use the discrete
d
com
mponents to make a drivver circuit annd the proteection
circuit. Everything
E
iss built in, in the smart po
ower modulees. The proteections like, over temperrature
protection, over currrent protectiion, over vo
oltage prote ction, all thhese protectiions are buiilt in,
inside the module. So,
S just imag
gine or just think
t
the redduction in thhe size that is possible uusing
wer moduless.
smart pow
17
Smart po
ower modulee or intelligen
nt power mo
odule, these are the poweer terminals and these arre the
control teerminals, con
ntrol pins.
(Refer Sllide Time: 41:26)
18
which can block both positive as well as negative voltage but then it has a longer tail current
duration. To fasten the turn off process, we modified the structure what is known as the anode
short structure. It cannot block the negative voltage. Then we studied BJT, bipolar junction
transistor. It can block only positive voltage, it cannot block negative voltage because base
emitter junction is heavily doped.
It is a current controlled device. The problem with power transistor is gain is low. But then, as
the voltage rating increases and more over these transistors are operated in saturation, gain still
falls. So therefore, we require a small power transistor to drive another high current power
transistor. It has an excellent on state characteristics. Vc sat into Ic is very small. Then we
discussed a MOSFET, ideal gate characteristics, in the sense, input power at the gate is
approximately 0. Input impedance is very high, very fast device and majority carrier device,
positive resistance coefficient, paralleling is very easy, no secondary break down but has one
limitation.
What is that? On state power loss is high. Then we studied an IGBT. It is the device, has
characteristics of MOS as well as a BJT. Input is a MOS, the power stage is a BJT. Gate power
requirement is very small. But then, the turn off time of an IGBT is slightly higher compared to
that of a MOS. That is because there are both majority as well as minority carriers.
So, this turn off time can be reduced by using a punch through IGBT. But then it cannot block a
negative voltage. In non punch through IGBT, it can block a negative voltage. So, there are very
few devices, it can block the negative voltage; a SCR, a symmetrical GTO and IGBT. Other
devices cannot block a negative voltage. So, that is about power semiconductor devices.
From next class onwards, I will discuss the various power electronic circuits. The power
semiconductor devices are used as switches and in our entire analysis, we will assume that these
devices are ideal. We need to know the 2 basic laws to understand power electronics. They are;
Kirchhoffs current law and Kirchhoffs voltage law.
So, we will start the course assuming that you all know these 2 laws. It is going to be very
simple. I will keep the mathematical content to a very low value. I will use the graphical
approach, mathematical approach is very important. So, if there is a circuit, you can always write
a differential equation and you can solve. I will not take that route.
I will take the graphical approach, I will draw the wave form and I will use the basic properties
limit of the various passive components, I will use the basic that is L and C. Average voltage
across inductor should be 0, the average value of the current flowing through the capacitor is 0 at
steady state. These are concepts that we will be using. So with that, I will conclude my todays
lecture. From next lecture, I will start the power electronic circuits.
Thank you.
20