Beruflich Dokumente
Kultur Dokumente
TCAD Tool
By
Mr. Sanjeet D. Sawant
Mr Kiran GK
Technology Manager,
Facility Technologist,
Acknowledgements
The Internship was carried out under the able guidance of Dr. Vijay Mishra,
Technology Manager, CeNSE, IISc, Bangalore. I would like to sincerely thank him
for giving me the opportunity to work under him for the project. I would like to
place on record my thanks to Mr. Kiran GK for their constant support and technical
guidance throughout the project. I would be failing in my duty, if I do not express
my heartfelt gratitude to all the members of Systems Lab for their encouragement
and support during this period.
Sanjeet Sawant
Abstract
FinFETs are of various types like SOI FinFET, BOI FinFET, Bulk FinFET,
etc. Here we will be having an over-view on designing of BOI FinFET using
Sentaurus TCAD Tool . TCAD consists of two main branches: process
simulation and device simulation. Fabrication processes like Depositing of
materials like Silicon, Polysilicon Oxide, etc. , Etching , Implantation of ion,
etc. come under process simulation . After the fabrication process it will be
gone under contact allocation for device simulation to see the characteristics
of the device process.
Contents Page
Section........................................................................Page Number
1. Introduction.............................................................................6
2. Objectives................................................................................7
3. Background Work...................................................................8
4. Sentaurus process(sprocess)............................................9
5. Sentaurus device(sdevice)............................................21
6. Inspect.................................................................................... 27
7. Sentaurus Workbench........................................................ 28
8. Conclusion..................................................................................29
9. Biblography.................................................................................30
Sentaurus TCAD tool is a tool used for simulation and also to solve
fundamental, physical, partial differential equations, such as diffusion and
transport equations for discretized geometries, representing the silicon wafer
or the layer system in a semiconductor device.
TCAD computer simulations substitute for costly and time-consuming test
wafer runs when developing and characterizing a new semiconductor device
or technology.
TCAD tool is widely used in Semiconductor Industry.
As technologies become more complex, the semiconductor industry relies
increasingly more on TCAD to cut costs and speed up the research and
development process. In addition, semiconductor manufacturers use TCAD
for yield analysis, that is, monitoring, analyzing, and optimizing their IC
process flows, as well as analyzing the impact of IC process variation.
TCAD consists of two main branches: process simulation and device
simulation.
Overview:
Sentaurus Process is a complete and highly flexible multidimensional
process modeling environment. With its modern software architecture, it
constitutes a new-generation tool and a solid base for process simulation.
Calibrated to a wide range of the latest experimental data using proven
calibration methodology, Sentaurus Process offers unique predictive
capabilities for modern silicon and nonsilicon technologies.
File types:
Sentaurus Process command file (*.cmd)
This is the main input file type for Sentaurus Process. It contains all
the process steps and can be edited. This file is referred to as the command
file or input file.
Log file (*.log)
Sentaurus Process generates this file during a run. It contains information
about each process step, and the models and values of physical parameters
used in it.
TDR boundary file (*_bnd.tdr)
This Synopsys-specific format stores the geometry of the device and is
usually saved by users at the end of a simulation. This file is used as the
input file for Sentaurus Visual for viewing.
To open a TDR file, open a terminal window and launch the TDR file
viewer with the command:
svisual <file_name>.tdr
# X lines
line x location= 0.0
spacing=0.01<um> tag=back
line x location= 0.15<um> spacing=0.01<um> tag=front
# Y lines
line y location=0.0
spacing=0.01<um> tag=Left
line y location=0.15<um> spacing=0.01<um> tag=Right
# Z lines
line z location= 0.0
spacing=0.01<um> tag=SiBottom
line z location=0.21<um> spacing=0.01<um> tag=SiTop
Sentaurus Process uses coordinate systems such that 2D
and 3D simulations are consistent.
Above commands create a base structure of the substrate Silicon
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First, A mask is defined to protect the Silicon area with the mask
command. In this project, only half of the transistor is simulated. The
left edge of the gate mask is, therefore, unimportant.
0.01 m ( rate= {0.01} of Silicon is etched over the entire structure
except the masked area. The keyword type=anisotropic means that
the layer is grown in the vertical direction only.
The first etch command refers to the previously defined mask and,
therefore, only the exposed part of the Silicon is etched. Note that the
requested etching depth is larger than the deposited layer. This over
etching ensures that no residual islands remain. The etching is
specified to be anisotropic, that is, the applied mask is transferred
straight down, without any undercut.
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Figure 1
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13
Figure 2
Arsenic implantation
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Fin formation
Command line for Fin formation:
#Fin formation
#----------------------------------------------------mask name=fin left= 0.07<um> right= 0.2<um> back=0.0<um>
front= 0.25<um>
etch material= {Si3N4} type=anisotropic time=1 rate= {0.007}
mask=fin
etch material= {SiO2} type=anisotropic time=1 rate= {0.004}
mask=fin
etch material= {SiO2} type=anisotropic time=1 rate= {0.03}
etch material= {Polysilicon} type=anisotropic time=1 rate=
{0.009}
mask name=fin1 left= 0.0<um> right= 0.2<um> back=0.01<um>
front= 0.25<um>
deposit material= {SiO2} type=anisotropic time=1 rate= {0.03}
mask=fin1
mask name=fin2 left= 0.07<um> right= 0.2<um> back=0.0<um>
front= 0.25<um>
etch material= {Si3N4} type=anisotropic time=1 rate= {0.006}
mask=fin2
etch material= {SiO2} type=anisotropic time=1 rate= {0.003}
mask=fin2
etch material= {SiO2} type=anisotropic time=1 rate= {0.03}
etch material= {Silicon} type=anisotropic time=1 rate= {0.03}
struct tdr.bnd= fin
15
Figure 3
mask name=fin3 left= 0.0<um> right= 0.07<um>
back=0.01<um> front= 0.25<um>
deposit material= {Silicon} type=anisotropic time=1 rate= {0.02}
mask=fin3
etch material= {Silicon} type=anisotropic time=1 rate= {0.02}
mask name=fin4 left= 0.0<um> right= 0.063<um>
back=0.017<um> front= 0.25<um>
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Figure 4
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Figure 5
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Figure 6
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Figure 7
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Command File
A typical command file of Sentaurus Device consists of several
command sections ,with each section executing a relatively
independent function. The default extension of the command file is
_des.cmd
For example, pp1_des.cmd
The command file typically contains the following:
1: File section
2: Electrode section
3: Physics section
4: Plot section
5: Math section
6: Solve section
File Section
The File section defines the input and output files of the simulation,
such as:
File {
* Input Files
Grid = "nmos_msh.tdr"
Parameter = "nmos.par"
22
Output files:
Sentaurus Device produces several output files:
1:A file containing electrode names and resulting voltages,
currents, charges, times, temperatures, and so on, whose name is
indicated in the Current statement
2:A file with the spatially distributed solution variables and their
derivatives, whose name is indicated in the Plot statement
3:A protocol file whose name is indicated in the Output
statement
23
24
Physics Section
In the Physics section, you declare the physical models to be used in
the simulation. The physical models can be defined globally:
Physics { [list of models] }
or materialwise:
Physics (Material="[material name]") {
[list of models]
}
or regionwise:
Physics (RegionInterface="[region name]") {
[list of models]
}
Specifying physical models globally means that the included
models are valid for all device regions. With a qualifier such as
25
Plot Section
The Plot section is used to specify the variables to be saved in the Plot
file (named in the File section) for further visualization in Sentaurus Visual:
Plot {
[list of variables]
}
The plot is performed at the end of the simulation or along the
electrode boundary-condition sweep, by having a Plot command specified
within the Solve section.
Math Section
The Math section is used to control the simulator numerics.
Solve Section
The Solve section consists of a series of simulation commands to
be performed that are activated sequentially. The specified command
sequence instructs the simulator as to which task must be solved and
how.
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27
Overview :
Sentaurus Workbench is the primary graphical front end that
integrates TCAD Sentaurus simulation tools into one environment.
It is used throughout the semiconductor industry to design,
organize, and run simulations.
Simulations are organized comprehensively into projects. Sentaurus
Workbench automatically manages the information flow, which
includes preprocessing user input files, parameterizing projects,
setting up and executing tool instances, and visualizing results.
Sentaurus Workbench allows you to define parameters and variables
to run comprehensive parametric analyses. The resulting data can be
used with statistical and spreadsheet tools.
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Bibliography
1. Introduction to VLSI Circuits and Systems Dr. John P. Uyemura
2. High-Performance BOI FinFETs Based on Bulk-Silicon Substrate Xiaoyan Xu, Runsheng Wang, Student Member, IEEE, Ru Huang, Senior
Member, IEEE, Jing Zhuge, Student Member, IEEE, Gang Chen, Xing
Zhang, Member, IEEE, and Yangyuan Wang, Fellow, IEEE
3. Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain
Underlap - Ji-Woon Yang, Member, IEEE, Peter M. Zeitzoff, Member, IEEE,
and Hsing-Huang Tseng, Senior Member, IEEE
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