1.

A piece of copper and another of germanium is

are cooled from room temperature to 80K. The
resistance of
a) Each of them increases
b) Each of them decreases
c) Copper increases and germanium
decreases
d) Copper decreases and germanium
increases
2. For which one of the following materials, is the
hall coefficient is zero?
a) Metal
b) Insulator
c) Intrinsic semiconductor
d) Alloy
3. While using a bipolar junction transistor as an
amplifier, the collector and emitter terminals got
interchanged mistakenly. Assuming that the
amplifier is a common emitter amplifier the
biasing is suitably adjusted, the interchange of
terminals will result into which one of the
following?
a) Zero gain
b) Infinite gain
c) Reduced gain
d) On change in gain at all
4. An amplifier without feedback has a gain of
1000. What is the gain of negative feedback
amplifier with feedback factor 0.009?
a) 900
b) 125
c) 100
d) 10
5. Voltage series feedback results in
a) Increases in both input output impedances
b) Decreases in both input output impedances
c) Increases in input impedance and decrease
in output impedance
d) Decrease in input impedance and increase
in output impedance
6. The potential barrier existing across a P-N
junction
a) prevents flow of minority carriers

b) prevents neutralization of acceptor and

donor ions
c) prevents total recombination of holes and
electrons
d) facilitates recombination of holes and
electrons
7. The effective channel length of a MOSFET in
saturation decreases with increase in
a) gate voltage
b) drain voltage
c) source voltage
d) body voltage
8. The output period of a transistorized monostable
multivibrator using base resistor Rb and coupling
capacitor Cb for the output transistor is given by
a) RbCb
b) 0.69 RbCb
c) 2 RbCb
d) 1.38 RbCb
9. In abrupt p-n junction, the doping concentrations
on the p side and n-side are
and

1016 / cm3

1017 / cm 3

respectively.

Total

depletion width is 0.32m then depletion width

on p-side is
a) 0.03m
b) 0.3m
c) 0.25m
d) 0.24m
10. If a differential voltage gain and the common
mode voltage gain of a differential amplifier are
48dB and 2dB respectively, then common mode
rejection ratio is
a) 46dB
b) 24dB
c) 50dB
d) 25dB
11. An oscillator whose frequency is changed by a
variable dc voltage source, is known as
a) A crystal oscillator
b) A VCO
c) An Armstrong oscillator
d) A piezoelectric device

12. Consider an abrupt p-n junction .Let

V bi be

the built in potential of this junction and

VR

be the applied reverse bias voltage. If the

depletion capacitance is 1pF for
=2v then for

V bi + V R =8v depletion

Six volts is applied across a 2 cm long

semiconductor bar. The average drift velocity is
104 Cm/s. The electron mobility is
a) 4396 cm2 /V.s
b) 3x104 cm2/V.s
c) 6 x 104 cm2/V.s
d) 3333 cm2/V.s

14. The applied electric field in p-type silicon is E =

10 V/cm. The semiconductor conductivity is =
1.5 (cm) 1 and the cross-sectional area is A =
105 cm2. Drift current is
a) 0.15mA
b) 0.21mA
c) 1.15mA
d) 0.015mA
15. In a half wave rectifier the peak value of the ac
voltage across the secondary of the transformer
is 202V.If no filter circuit is used the dc voltage
(in volt) across the load will be
a) 28.28
b) 14.14
c) 9
d) 20
16. The i -v characteristics of the diode in the circuit
given below is
i=

v0.7
A v 0.7 V
500
0 A v <0.7 V

The current i in the circuit is

10 mA
9.3 mA
6.67mA
6.2mA

V bi + V R

capacitance is
a) 4pF
b) 2pF
c) 0.25pF
d) 0.5pF
13.

a)
b)
c)
d)

17. Choose the correct statement for

+ n

junction diode under reverse bias

1. Magnitude of electric field is maximum at
junction
2. Direction of electric field in depletion region
is always from p to n
3. Junction capacitance increases with increases
reverse bias voltage
4. Depletion layer is entirely lie in n region
a) 1, 2 and 4
b) 1, 2,3 and 4
c) 1 and 4
d) 1and 3
18. Consider the following two statements about
the internal conditions in an n-channel
enhancement type MOSFET operating in the
active region
1.S1: The inversion charge decreases from
source to drain
2.S2: The channel potential increases from source
to drain
Which of the following is correct
a) only S2 is true
b) both S1 and S2 are true ,but S2 is not a
reason for S1
c) both S1 and S2 are false
d) both S1 and S2 are true , and S2 is a reason
for S1
19. In a p-type silicon sample, the hole
concentration is 2.25x1015/cm3. If the intrinsic
carrier concentration is 1.5x1010 /cm3, what is
the electron concentration in the p-type silicon
sample?
a) zero
b) 1010 /cm3
c) 105/cm3

d) .5x1015/cm3
20. A d.c power supply has no load voltage of 30V
and a full load voltage of 25V at a full load
current of 1A.Its output resistance and load
regulation respectively are
a) 5 and 20%
b) 25 and 20%
c) 5and 16.7%
d) 25 and 16.7%
21. The zero gate bias channel resistance of a
junction field effect transistor is 750 and the
pinch-off voltage is 3V. For a gate bias of 1.5V
and very low drain voltage, device would
behave as a resistance of
a) 320
b) 816
c) 1000
d) None of these
22. The maximum junction temperature of a
transistor is 1500C and the ambient temperature
is 250C. If the total thermal impedance is 1 0C/W,
what is the maximum power dissipation (in
watt)?
a)

1
175

b) 175
c) 125
d)

1
12 5

23. If a class C power amplifier has an input signal

with frequency of 200KHz and the width
collector current pulses of 0.1s, then the duty
cycle of amplifier is
a) 1%
b) 2%
c) 10%
d) 20%
24. Negative feedback is used to
a) increase the gain
b) increase stability
c) design an oscillator
d) all the above

25. An amplifier with open loop gain of 10,000 and

feedback factor of 0.1 has upper 3dB frequency
of 1 KHz. The upper 3 dB frequency in presence
of feedback is
a) 11MHz
b) 1.001MHz
c) 101MHz
d) 111MHz
26. Silicon diodes are less suited for low voltage
rectifier operation because
a) it cannot withstand high temperatures
b) its reverse saturation current is low
c) its cut-in voltage is high
d) its breakdown voltage is high
27. Consider the following statements for a p-n
junction diode?
1. Depletion layer width decreases and barrier
potential increases with forward biasing
2. Increase the reverse bias voltage across a p-n
junction increase carrier recombination in
depletion region
3. Current after cut-in and breakdown voltage is
mainly diffusion current.
4. Depletion region in a semiconductor p-n
junction diode has immobile positive and
negative ions
a) 1,3 and 4
b) 1.2 and 4
c) 3 and 4
d) Only 4
28. When the temperature of p-type silicon sample
increases which generates

20

10

electron

hole pairs per cm3 per second. The minority

carrier life time in the sample is 1s.In the
steady state ,the electron concentration in the
sample is approximately
integer, the value of x is
a) 20
b) 12
c) 14
d) None of these

10

where x is an

29. Which of the following ports of 8051 might be

designed as a true bi-directional port? Consider
the following statements S1 and S2
S1: the of a bipolar transistor reduces if the
base width is increased
S2: the of a bipolar transistor increases if the
doping concentration in the base is increased
a) S1 is false and S2 is true
b) Both S1 and S2 are true
c) Both S1 and S2 are false
d) S1 is true and S2 is false

a) A low pass filter with f3dB=

rad/s

1
( R 1+ R 2 ) C
1

30. Avalanche breakdown results basically due to

a) impact ionisation
b) strong electric field across the junction
c) emission of electrons None of these
d) rise in temperature

b) A high pass filter with f3dB= R 1 C

31. The diodes and capacitors in the circuit shown

are ideal. The voltage v(t) across the diode D1 is

d) A high pass filter with f3dB=

rad/s

1
c) A low pass filter with f3dB= R 1 C

rad/s

1
( R 1+ R 2 ) C

rad/s

a)
b)
c)
d)

cos (t) 1
sin(t)
1 cos (t)
1 sin(t)

32. The source of a silicon (ni =1010 per cm3 ) nchannel MOS transistor has an area of 1sq m
and a depth of 1m. If the dopant density in the
source is 1019/cm3, the number of holes in the
source region with the above volume is
approximately
a) 107
b) 100
c) 0
d) 10

34. A Darlington amplifier has a

a) Large current gain and high input
resistance
b) Large voltage gain and low output
resistance
c) Small voltage gain and low input
resistance
d) Small current gain and high output
resistance
35. In the circuit shown below what is the output
voltage (Vout ) if a silicon transistor Q and an
ideal Op-Amp are used ?

33. The circuit shown is a

a) -15V
b) -0.7V

c) +0.7V
d) +15V
36. Consider the following statements for a n-p-n
transistor
1. The main stream of current in the base region
is due to drifting of holes
2. The main stream of current in the base region
is due to diffusion of holes
3. In active region collector current does not
depends on base to collector voltage.
a) 1and 2
b) 1.2 and 3
c) 2 and 3
d) Only 2
37. In the circuit shown below, the knee current of
the ideal Zener diode is 10mA. To maintain 5V
across R L , the minimum value of R L in and
the minimum power rating of Zener diode in
mW, respectively are

a)
b)
c)
d)

125 and 125

125 and 250
250 and 125
250 and 250

38. An op-amp having a slew rate of 62.8V/s is

connected in a voltage follower configuration. If

the maximum amplitude of the input sinusoid is

10V, then the minimum frequency at which the
slew rate limited distortion would set in at the
output is
a) 1 MHz
b) 6.28 MHz
c) 10MHz
d) 62.8MHz
39. An op-amp has open loop gain 100000 and the
open-loop upper cut-off frequency is 20Hz. The
unity gain frequency of the op-amp is
a) 2 MHz
b) 1 MHz
c) 3 KHz
d) 2 KHz
40. The small-signal resistance (i.e dVB / dID) in k
offered by the n-channel MOSFET M shown in
the figure below, at a bias point of V B = 2 V is
(device data for M: device transconductance
parameter, kN = n Cox( W / L) = 40A /V2
threshold voltage VTN = 1V, and neglect body
effect and channel length modulation effects)

a)
b)
c)
d)

12.5
25
50
100