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First A. Author, Second B. Author, Jr., and Third C. Author, Member, IEEE
Index Terms Bidirectional IGBT, Buck Boost inverter, switching cell, switching/conduction losses. For a list of suggested keywords,
send a blank e-mail to keywords@ieee.org or visit http://www.ieee.org/organizations/pubs/ani_prod/keywrd98.txt\
Note: There should no nonstandard abbreviations, acknowledgments of support, references or footnotes in in the abstract.
I.
INTRODUCTION1
S2
S4
V0
Vin
R
S1
S3
v0
Renewable
energy
source.
AC load
or grid
DC/AC
S2
C1 v1
S1
L1
Vin
S3
+
-
S4
L2
v2 C2
VDC
-v
Converter 2
0
VDC
-v
Voltage across the load
v
0
Boost DC-DC
-v
converter
Q1
L1
Vin
Q3
L2 vo
C1
Q2
Q5
Q4
C2
Q6
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S1
S2
v0
R
C0
S2
C1 v1
S1
L1
Vin
S3
+
-
S4
L2
v2 C2
Overlap time
S4
S3
N-cell
P-cell
or
S2
D1
C1 v1
L2
D2
D4
S1
S3
L1
Vin
+
-
S4
D3
v2
C2
Fig. 7. Voltage gain vs duty cycle curve for individual boost converters and
proposed inverter.
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vref 1 1 d1
carrier
0.5
0
S2
S1
vref 1
carrier
vref 2 1 d 2
carrier
V0 2V2 2VDC
Where V2 is maximum negative voltage that appears
across the capacitor of 2nd buck boost converter and is
calculated as
V D
V2 in .
1 D
D=maximum duty cycle of switch S3 or S1.
For minimum voltage stress across semiconductor
V
devices VDC 0 is chosen.
2
Vin D
V
Henc V0 2
2 0
1 D
2
0.5
0
S4
S3
VDC V sin t
v1
0
VDC
VDC V sin t
v2
(V ) : t ( s )
VDC V sin t
VDC
(V ) : t ( s )
VDC V sin t
V0 sin t
v0
0
(V ) : t ( s )
v0 v1 v2 2 A sin t
v2 VDC A sin t
(1)
d2 (Vin )
1 d2
(2)
v0 v1 v2 2 A sin t
OR v0 V0 sin t
where V0 2 A.
(3)
V
0 .
2
V
But the best case is VDC 0 because in this case the
2
1
.
v0
v0
sin t 1
2Vin 2Vin
v0
v
0 sin t
2Vin 2Vin
d2
.
v0
v
0 sin t 1
2Vin 2Vin
1 d2
1
.
v0
v0
sin t 1
2Vin 2Vin
(4)
(5)
V0
D
Vin 1 D
Calculated ac gain is equally verified with simulation
results that are included in fig. (). The circuit
parameters along with its results are also summarized
in table[].
Ac gain=
90V
0.6
0.6
Switching frequency
20KHz
500uH
Capacitors C1 , C2
10uF
Dmax 3
Inductors L1 , L2 , L3 , L4
Load
AC gain
Maximum output voltage
(6)
(7)
V0 Ac gain Vin
50
1.5
135V
Similarly,
V
di2
in
dt
L1
(3)
di3 Vin
dt
L3
(4)
V
di4
in
dt
L4
(5)
i0
S2
D1
i01
S1
D2
v1 C
1
L2
i2
L1
i1
S4
D3
iin1 iin2
Vin
+
-
i02
S3
D4
L3
i3
L4
i4
C2 v2
2) Mode 2: -
dt
L1
(2)
L4
dt
L3 dt
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v0
i0
v0
i0
S2
D1
i01
S1
D2
v1 C
1
L2
i2
i02
S3
+
-
Vin
L1
i1
S2
S4
D3
iin1 iin2
i01
D4
L3
i3
S1
D2
C2 v2
L4
i4
D1
v1 C
1
L2
i2
iin1 iin2
Vin
L1
i1
S4
D3
i02
S3
+
-
D4
L3
i3
C2 v2
L4
i4
6) Mode 6: 3) Mode 3: -
dt
dt L2
L1
di3
v
di
v
2 , 4 2
dt
L3 dt L4
Also, iin 0 & iin 0
1
2
S2
D2
v1 C
1
L2
i2
L1
i1
Vin
+
-
v1 C
1
S4
D3
iin1 iin2
S1
D2
D1
D1
i01
v0
S1
v0
R
i0
i01
di3
v
di
v
2 , 4 2
dt
L3 dt L4
i0
S2
dt
L1 dt
L2
L2
i2
i02
S3
iin1 iin2
Vin
L1
i1
S4
D3
i02
S3
+
-
D4
L3
i3
C2 v2
L4
i4
D4
L3
i3
L4
i4
C2 v2
7) Mode 7: -
S2
D1
i01
v0
i0
S1
D2
v1 C
1
L2
i2
L1
i1
S4
D3
iin1 iin2
Vin
+
-
i02
S3
D4
L3
i3
L4
i4
C2 v2
8) Mode 8: -
ref1 1 d1
carrier
CURRENT CONTINUITY
S2
S1
ref 2 1 d 2
S3
C1
v1
C2
D1
i01
S1
D2
L2
i2
S4
v0
i0
S2
carrier
L1
i1
iin1 iin2
Vin
S4
i02
S3
+
-
v1
v2
D3
v2
D4
L3
L4
i4
i3
iin1 i1 i2 i0
iin2 i3 i4 i0
From equations, above i1 , i2 , i3 , i4 & i0 are either quasi
continuous or continuous hence iin and iin will also be
1
v0
quasi continuous.
v2 A sin(t )
In the negative portion of output voltage, S3 and S4
will operate at high frequencies. S1 will be in off state
and S2 in on state during this half cycle. Voltage
across capacitors C1 and C2 will be.
v1 A sin(t )
(7)
t 2
v2 0
From (6) and (7);
d1 0
A sin(t )
d 2 A sin(t ) V
in
A
sin
d1
A sin t Vin
d 0
2
From (8) and (9)
0 t (8)
t 2
(9)
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0 t
d1 0
A sin t
d1 A sin wt V
in
A sin(t )
d 2
A
sin(
wt ) Vin
d =0
2
(10)
0 t
(11)
t 2
S1
v1 C
1
S1
S3
S4
L2
i2
D1
S1
D2
v1 C
1
1) Mode 1: -
L2
i2
S1
D2
v1 C
1
L2
i2
L1
i1
Vin
+
-
iin1 iin2
Vin
L1
i1
i3
L3
C2 v2
L4
i4
v0
S2
D4
L4
i4
+
-
D4
S4
L3
S3
i3
i0
S3
S4
D3
R
iin1 iin2
C2 v2
L4
i4
v0
D3
L3
D1
+
-
D4
v0
S2
S2
S3
i3
i0
t6 t7 t8 t9 t10 t11
i0
iin1 iin2
Vin
L1
i1
S4
D3
Fig.
D1
S2
S2
D2
t0 t1 t2 t3 t4 t5
v0
i0
t 2
D1
S1
D2
C2 v2
v1 C
1
L2
i2
L1
i1
S4
D3
iin1 iin2
Vin
+
-
S3
D4
L3
i3
L4
i4
C2 v2
[26] P.W. Sun, J.-S. Lai, H. Qian, W.S. Yu, C. Smith, J. Bates, B. Arnet, A.
Litvinov, and S. Leslie, Efficiency evaluation of a 55kW
soft-switching module based inverter for high temperature hybrid
electric vehicle drives application, in Proc. 25th IEEE Applied Power
Electron. Conf. and Expo., 2010, pp. 474--479.
i0
S2
D1
S1
D2
v1 C
1
L2
i2
iin1 iin2
Vin
L1
i1
S4
D3
S3
+
-
D4
L3
i3
C2 v2
L4
i4
i0
S2
D1
S1
D2
v1 C
1
L2
i2
L1
i1
S4
D3
iin1 iin2
Vin
+
-
S3
D4
L3
i3
L4
i4
C2 v2
In
addition,
when
it
operates
at higher dc bus voltage of each cell, it loses the benefit of
employing
power
MOSFETs as the active switches for fast switching speed and
efficiency improvement because of the reverse recovery
issues
of the body diode [21]-[23] unless people employ
soft-switching techniques [24]-[26]. For example, when the
cell
dc bus voltage goes up to 300V to 600V, people can not
simply
adopt high voltage power MOSFETs (600V to 900V rated
voltage, such as CoolMOS or MDmesh series) to work at
hard-switched situation like traditional cascade H-bridge
inverter.
[21] S.-Y. Park, P.W. Sun, W. Yu and J.-S. Lai, Performance evaluation of
high voltage super junction MOSFETs for zero-voltage soft-switching
inverter applications, in Proc. 25th IEEE Applied Power Electron.
Conf. and Expo., 2010, pp. 387--391.
[23] C.M. Johnson, and V. Pickert, Three-phase soft-switching voltage
source converters for motor drives. II. Fundamental limitations and
critical assessment, IEE Proceedings on Electric Power Applications,
vol. 146, no. 2, pp. 155162, 1999
[24] P.W. Sun, J.-S. Lai, H. Qian, W.S. Yu, C. Smith, and J. Bates, High
efficiency three-phase soft-switching inverter for electric vehicle
drives, in Proc. IEEE Vehicle Power and Propulsion Conf., 2009, pp.
761--766.
However,
the
delayed
responses
of
gate
drive circuits and switching devices produce overlap time
and/or dead time among the switches. The overlap [see Fig.
2(a)] and dead time [see Fig. 2(b)] cause current spikes
(di/dt) and voltage spikes (dv/dt), respectively, often
damaging the semiconductor devices. Thus, overlap and
dead time among the switches severely impair the reliability
of traditional acac converters, which limits their practical
applications. Soft commutation strategies for smooth current
transition have been researched in [22] and [39] for the
purpose of providing safe commutation and to avoid the use
of lossy snubber circuits. All of these strategies use
voltage/current sensing modules to enable the switching
devices to conduct according to the polarity of the input
voltage/current. The sensing modules, however, increase the
cost and control complexity of the converter, and these
methods still cannot provide safe and reliable commutation
when the input voltage is highly distorted, especially around
the zero crossing point [13]. Similar to the method
using RC snubber circuits, these methods also cannot protect
the switching devices from high current spikes when
shoot-through caused by EMI noises misgating-on
occurs.Body (or antiparallel) diodes of standard
metaloxide semiconductor field-effect transistors
(MOSFETs) exhibit poor reverse recovery characteristics
[23], [24]; therefore, insulated gate bipolar junction
transistors
(IGBTs)
are
commonly
used
as
switching devices in the traditional hard switching acac
converters. Fig. 3 illustrates the effect of reverse recovery
problem
of the MOSFETs body diode in the traditional buck-type
acac
converter. Switches S3 and S4 are turned on for vin > 0 for the
safe commutation. To avoid current shoot-through, finite
dead
time between S1 and S2 is required and the output inductor
current freewheels through the body diode DB of S2 during the
dead time. When S1 is turned on after the dead time, DB flows
current in reverse direction for a short interval due to its
reverse
recovery as shown in Fig. 3(b). Due to this, the reverse
recovery current creates a short circuit of input voltage,
which
causes
large current spikes in the switches and diodes. [24].
[23] L. Saro, K. Dierberger, and R. Redl, High-voltage MOSFET behavior
in soft-switching converters: Analysis and reliability improvements, in
Proc. 20th IEEE Telecom. Energy Conf., 1998, pp. 3040.
[24] X. D. Huang, H. J. Yu, J.-S. Lai, A. R. Hefner, and D. W. Berning,
Characterization of paralleled super junction MOSFET devices under
hard and soft-switching conditions, in Proc. 32nd IEEE Power Electron.
Spec. Conf., 2001, vol. 4, pp. 21452150. [39] J. H. Kim, B. D. Min, B. H.
Kwon,
and
S.
C.
Won,
A
PWM
buckboost
ac
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chopper solving the commutation problem, IEEE Trans. Ind. Electron.,
vol. 45, no. 5, pp. 832835, Oct. 1998. H. Shin, H. Cha, H. Kim, and D.
Yoo,
Novel
single-phase
PWM
AC
AC converters solving commutation problem using switching cell structure
and coupled inductor, IEEE Trans. Power Electron, vol. 30, no. 4,
pp. 21372147, Apr. 2015.
11
B. Dead Time
The dead time in which all the switching devices are turned
off is shown in Fig. 11(a). The capacitors C1 and C2 bypass
the
inductors currents during the dead time. The bypass modes
for
positive and negative half cycle of input voltage are shown
in
Fig. 11(b) and (c), respectively
C. Overlap Time
In this interval, all the switching devices are turned on,
as shown in Fig. 12(a). The limiting inductors limit the
shoot-through current by providing a high impedance path
when
all the switches are turned on either by purpose or
mismatched
gate signals. Fig. 12(b) and (c) shows this mode for vin > 0
and
vin < 0, respectively.
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TABLE I
UNITS FOR MAGNETIC PROPERTIES
Symbol
Quantity
H
m
magnetic flux
magnetic flux density,
magnetic induction
magnetic field strength
magnetic moment
magnetization
4M
j
J
magnetization
specific magnetization
magnetic dipole
moment
magnetic polarization
susceptibility
mass susceptibility
permeability
r
w, W
N, D
relative permeability
energy density
demagnetizing factor
1 Mx 108 Wb = 108 Vs
1 G 104 T = 104 Wb/m2
1 Oe 103/(4) A/m
1 erg/G = 1 emu
103 Am2 = 103 J/T
1 erg/(Gcm3) = 1 emu/cm3
103 A/m
1 G 103/(4) A/m
1 erg/(Gg) = 1 emu/g 1 Am2/kg
1 erg/G = 1 emu
4 1010 Wbm
1 erg/(Gcm3) = 1 emu/cm3
4 104 T
1 4
1 cm3/g 4 103 m3/kg
1 4 107 H/m
= 4 107 Wb/(Am)
r
1 erg/cm3 101 J/m3
1 1/(4)
Vertical lines are optional in tables. Statements that serve as captions for
the entire table do not need footnote letters.
aGaussian units are the same as cgs emu for magnetostatics; Mx = maxwell,
G = gauss, Oe = oersted; Wb = weber, V = volt, s = second, T = tesla, m =
meter, A = ampere, J = joule, kg = kilogram, H = henry.
X. MATH
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Editor or the MathType add-on (http://www.mathtype.com)
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Microsoft Equation or MathType Equation). Float over
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XI. UNITS
Use either SI (MKS) or CGS as primary units. (SI units are
strongly encouraged.) English units may be used as
secondary units (in parentheses). This applies to papers in
data storage. For example, write 15 Gb/cm2 (100 Gb/in2).
An exception is when English units are used as identifiers in
trade, such as 3-in disk drive. Avoid combining SI and
CGS units, such as current in amperes and magnetic field in
oersteds. This often leads to confusion because equations do
not balance dimensionally. If you must use mixed units,
clearly state the units for each quantity in an equation.
The SI unit for magnetic field strength H is A/m. However,
if you wish to use units of T, either refer to magnetic flux
density B or magnetic field strength symbolized as 0H. Use
the center dot to separate compound units, e.g., Am2.
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15
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Define abbreviations and acronyms the first time they are
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periods should not have spaces: write C.N.R.S., not C. N.
R. S. Do not use abbreviations in the title unless they are
unavoidable (for example, IEEE in the title of this article).
D. Equations
Number equations consecutively with equation numbers in
parentheses flush with the right margin, as in (1). First use the
equation editor to create the equation. Then select the
Equation markup style. Press the tab key and write the
equation number in parentheses. To make your equations
more compact, you may use the solidus ( / ), the exp function,
or appropriate exponents. Use parentheses to avoid
ambiguities in denominators. Punctuate equations when they
are part of a sentence, as in
(1)
Be sure that the symbols in your equation have been
defined before the equation appears or immediately
following. Italicize symbols (T might refer to temperature,
but T is the unit tesla). Refer to (1), not Eq. (1) or
equation (1), except at the beginning of a sentence:
Equation (1) is ... .
E. Other Recommendations
Use one space after periods and colons. Hyphenate
complex modifiers: zero-field-cooled magnetization.
Avoid dangling participles, such as, Using (1), the potential
was calculated. [It is not clear who or what used (1).] Write
instead, The potential was calculated by using (1), or
Using (1), we calculated the potential.
Use a zero before decimal points: 0.25, not .25. Use
cm3, not cc. Indicate sample dimensions as 0.1 cm 0.2
cm, not 0.1 0.2 cm2. The abbreviation for seconds is
s, not sec. Do not mix complete spellings and
abbreviations of units: use Wb/m2 or webers per square
meter, not webers/m2. When expressing a range of values,
write 7 to 9 or 7-9, not 7~9.
A parenthetical statement at the end of a sentence is
punctuated outside of the closing parenthesis (like this). (A
parenthetical sentence is punctuated within the parentheses.)
> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) <
17
JOURNAL.
[8]
XVI. CONCLUSION
Please include a brief summary of the possible clinical
implications of your work in the conclusion section.
Although a conclusion may review the main points of the
paper, do not replicate the abstract as the conclusion.
Consider elaborating on the translational importance of the
work or suggest applications and extensions.
APPENDIX
Appendixes,
if
acknowledgment.
needed,
appear
before
the
ACKNOWLEDGMENT
The preferred spelling of the word acknowledgment in
American English is without an e after the g. Use the
singular heading even if you have many
acknowledgments. Avoid expressions such as One of us
(S.B.A.) would like to thank ... . Instead, write F. A. Author
thanks ... . Sponsor and financial support
acknowledgments are placed in the unnumbered footnote
on the first page, not here.
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]