APM2556NU

N-Channel Enhancement Mode MOSFET

Features

Pin Description

25V/60A,
RDS(ON)=4.5m (typ.) @ VGS=10V
RDS(ON)=7.5m (typ.) @ VGS=4.5V

Super High Dense Cell Design

D
S

Reliable and Rugged

Top View of TO-252

Lead Free and Green Devices Available

(RoHS Compliant)

Applications

Power Management in Desktop Computer or

DC/DC Converters
S

N-Channel MOSFET

Ordering and Marking Information

Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device

APM2556N
Assembly Material
Handling Code
Temperature Range
Package Code

APM2556N U :

APM2556N
XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Absolute Maximum Ratings
Symbol

Parameter

Rating

Unit

Common Ratings (TA=25C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

25

VGSS

Gate-Source Voltage

20

Maximum Junction Temperature

150

-55 to 150

40

TJ
TSTG

Storage Temperature Range

IS

Diode Continuous Forward Current

IDP

300s Pulse Drain Current Tested

ID

Continuous Drain Current

PD

Maximum Power Dissipation

TC=25C

160

TC=100C

90

TC=25C

60*

TC=100C

48

TC=25C

50

TC=100C

20

A
A
W

RJC

Thermal Resistance-Junction to Case

2.5

C/W

RJA

Thermal Resistance-Junction to Ambient

50

C/W

EAS

Drain-Source Avalanche Energy, L=0.5mH

225

mJ

Notes:
* Current limited by bond wire.

Electrical Characteristics
Symbol

Parameter

Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
VGS(th)
IGSS

Zero Gate Voltage Drain Current

VGS=0V, IDS=250A

VGS=20V, VDS=0V

Reverse Recovery Charge

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

Min.

Typ.

Max.

25
1
30
1.3

1.8

100

nA

4.5

5.7

VGS=4.5V, IDS=20A

7.5

10

ISD=40A, VGS=0V

0.7

1.1

2.5

VGS=10V, IDS=40A

IDS=40A, dlSD/dt=100A/s

Unit

TJ=85C

Gate Leakage Current

Reverse Recovery Time

APM2556NU

VDS=20V, VGS=0V
VDS=VGS, IDS=250A

Diode Characteristics
VSDa
Diode Forward Voltage

Qrr

Test Conditions

Gate Threshold Voltage

RDS(ON) a Drain-Source On-state Resistance

trr

(TA = 25C)

28

ns

14

nC

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APM2556NU
Electrical Characteristics (Cont.)
Symbol

Parameter

Gate Charge Characteristics

Qg
Total Gate Charge

(TA = 25C)

Test Conditions

APM2556NU
Min.

Typ.

Max.

25

35

Unit

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=15V, VGS=4.5V,
IDS=40A

nC

6
16

Dynamic Characteristics
RG
Gate Resistance
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

tr

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

tf

VGS=0V,VDS=0V, F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz

VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6

Turn-off Fall Time

0.5

1.3

2.6

2230

2900

pF

485
435
16

30

18

33

58

105

32

59

ns

Notes:
a : Pulse test ; pulse width300s, duty cycle2%.
b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Typical Characteristics
Drain Current

Power Dissipation
60

70
60

ID - Drain Current (A)

Ptot - Power (W)

50

40

30

20

10

50
40
30
20
10

TC=25 C
0

20 40 60 80 100 120 140 160 180

TC=25 C,VG=10V
0

20

40

60

80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

400

Normalized Effective Transient

1
Lim
it

1ms

Rd
s(o
n)

ID - Drain Current (A)

100

10ms
100ms

10

1s
DC

Duty = 0.5
0.2
0.1
0.05

0.1
0.02
0.01

0.01

Single Pulse

Mounted on 1in pad

o
RJA :50 C/W

TC=25 C

0.1
0.01

0.1

10

1E-3
1E-4

100

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

1E-3

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APM2556NU
Typical Characteristics (Cont.)
Drain-Source On Resistance

Output Characteristics
160

13

VGS= 5,5.5,6,7,8,9,10V

12

4.5V

120

ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

140

100
4V
80
60
3.5V
40
3V

20

11

VGS=4.5V

10
9
8
7
6

VGS=10V

5
4
3
2

0
0.0

0.5

1.0

1.5

2.0

2.5

3.0

20

40

60

80 100 120 140 160

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage

1.6

18

IDS =250A

16

Normalized Threshold Vlotage

RDS(ON) - On - Resistance (m)

ID=40A

14
12
10
8
6
4

1.2
1.0
0.8
0.6
0.4

2
0

1.4

0.2
-50 -25

10

25

50

75 100 125 150

Tj - Junction Temperature (C)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Typical Characteristics (Cont.)
Drain-Source On Resistance

Source-Drain Diode Forward

160

2.0
VGS = 10V

100

IDS = 40A

1.6

Tj=150 C
1.4

IS - Source Current (A)

Normalized On Resistance

1.8

1.2
1.0
0.8
0.6
0.4

Tj=25 C

10

0.2
o

RON@Tj=25 C: 4.5m

0.0
-50 -25

25

50

0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

75 100 125 150

Tj - Junction Temperature (C)

VSD - Source-Drain Voltage (V)

Capacitance

Gate Charge
10

4000

Frequency=1MHz

VDS= 15V
9 I = 40A
D

VGS - Gate-source Voltage (V)

3500

C - Capacitance (pF)

3000
2500
Ciss
2000
1500
1000
500
0

Coss

Crss

8
7
6
5
4
3
2
1

10

15

20

25

10

20

30

40

50

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Avalanche Test Circuit and Waveforms

VDS
L

tp

VDSX(SUS)

DUT

VDS
IAS

RG
VDD

VDD
IL

tp

EAS

0.01

tAV

Avalanche Test Circuit and Waveforms

VDS
RD

VDS

DUT

90%

VGS
RG
VDD
10%

tp

VGS
td(on) tr

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

td(off) tf

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APM2556NU
Package Information
TO-252
E

A
E1

c2

L4

D1

L3

b3

SEE VIEW A

GAUGE PLANE

SEATING PLANE

0.25

A1

L
VIEW A
TO-252

S
Y
M
B
O
L

MIN.

MAX.

MIN.

MAX.

2.18

2.39

0.086

0.094

MILLIMETERS

INCHES

0.005

0.13

A1
b

0.50

0.89

0.020

0.035

b3

4.95

5.46

0.195

0.215
0.024

0.46

0.61

0.018

c2

0.46

0.89

0.018

0.035
0.245

5.33

6.22

0.210

D1

4.57

6.00

0.180

0.236

6.35

6.73

0.250

0.265

E1

3.81

6.00

0.150

0.236

9.40

10.41

0.370

0.90

1.78

0.035

0.070

L3

0.89

2.03

0.035

0.080

e
H

2.29 BSC

0.410

0.040

1.02

L4
0

0.090 BSC

Note : Follow JEDEC TO-252 .

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Carrier Tape & Reel Dimensions
P0

P2

P1

B0

E1

OD0

K0

A0

OD1 B

SECTION A-A

SECTION B-B

H
A

T1

Application

T1

330.0
2.00

50 MIN.

P0

P1

P2

D0

D1

4.00.10

8.00.10

2.00.05

1.5+0.10
-0.00

1.5 MIN.

TO-252

E1

16.4+2.00 13.0+0.50
-0.00
-0.20 1.5 MIN. 20.2 MIN. 16.00.30 1.750.10 7.500.05
T

A0

0.6+0.00 6.800.20
-0.40

B0

K0

10.40 2.500.20
0.20
(mm)

Devices Per Unit

Package Type

Unit

Quantity

TO-252

Tape & Reel

2500

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

www.anpec.com.tw

APM2556NU
Reflow Condition

(IR/Convection or VPR Reflow)

tp

TP

Critical Zone
TL to TP

Temperature

Ramp-up
TL

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 C to Peak

25

Time

Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST

Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9

Description
245C, 5 SEC
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles

Classification Reflow Profiles

Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate

Sn-Pb Eutectic Assembly

Pb-Free Assembly

3C/second max.

3C/second max.

100C
150C
60-120 seconds

150C
200C
60-180 seconds

183C
60-150 seconds

217C
60-150 seconds

See table 1

See table 2

10-30 seconds

20-40 seconds

6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

10

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APM2556NU
Classification Reflow Profiles (Con.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5C
2.5 mm
225 +0/-5C

Volume mm
350
225 +0/-5C
225 +0/-5C

Table 2. Pb-free Process Package Classification Reflow Temperatures

3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C)
at the rated MSL level.

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Copyright ANPEC Electronics Corp.

Rev. A.3 - Jul., 2008

11

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