AOD409

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD409 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.

VDS (V) = -60V

ID = -26A (VGS = -10V)
RDS(ON) < 40m (VGS = -10V) @ -20A
RDS(ON) < 55m (VGS = -4.5V)

TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25C

Continuous Drain
Current G
C

Repetitive avalanche energy L=0.1mH

TC=25C
Power Dissipation B

TC=100C

Power Dissipation A

TA=70C

V
A

-18

IAR

-26

EAR

134

mJ

-60

60
2.5

1.6

TJ, TSTG

-55 to 175

Symbol
t 10s
Steady-State
Steady-State

30

PDSM

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

20

ID
IDM

PD

TA=25C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C

Units
V

-26

TC=100C

Pulsed Drain Current

Avalanche Current

Maximum
-60

RJA
RJC

Typ
16.7
40
1.9

Max
25
50
2.5

Units
C/W
C/W
C/W

AOD409

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

Conditions

Min

ID=-250A, VGS=0V

-60

VDS=-48V, VGS=0V

Gate-Body leakage current

VDS=0V, VGS=20V

Gate Threshold Voltage

VDS=VGS ID=-250A

-1.2

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-60

VGS=-10V, ID=-20A
TJ=125C

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-20A

gFS

Forward Transconductance

VSD

IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current

VDS=-5V, ID=-20A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)

-0.003

-1

V
A

100

nA

-1.9

-2.4

32

40

A
53
43

55

-1

-30

3600

pF

32
-0.73

2977
VGS=0V, VDS=-30V, f=1MHz

Units

-5

IGSS

IS

Max

TJ=55C

VGS(th)

RDS(ON)

Typ

241

pF

153
VGS=0V, VDS=0V, f=1MHz

VGS=-10V, VDS=-30V, ID=-20A

pF
2.4

44

54

nC

22.2

28

nC

Qgs

Gate Source Charge

nC

Qgd

Gate Drain Charge

10

nC

tD(on)

Turn-On DelayTime

12

ns

tr

Turn-On Rise Time

14.5

ns

tD(off)

Turn-Off DelayTime

38

ns

tf

Turn-Off Fall Time

15

ns

VGS=-10V, VDS=-30V, RL=1.5,

RGEN=3

trr

Body Diode Reverse Recovery Time

IF=-20A, dI/dt=100A/s

40

Qrr

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s

59

50

ns
nC

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

-4.5V

-10V

25

VDS=-5V

25

-6V
-5V

20
-ID(A)

20
-ID (A)

30

-4V

15
-3.5V

15
125C

10

10

25C
VGS=-3V
0

0
0

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics
50

40

1.8

Normalized On-Resistance

RDS(ON) (m)

VGS=-4.5V
30
VGS=-10V
20
10

VGS=-10V
ID=-20A

1.6
VGS=-4.5V
ID=-20A

1.4
1.2
1

0
0

0.8

10

15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

25

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature

1.0E+01

80
ID=-20A

125C

1.0E+00
1.0E-01

125C

-IS (A)

60
RDS(ON) (m)

50

25C

1.0E-02
1.0E-03

25C

1.0E-04

40

1.0E-05
1.0E-06
20

0.0
2

10

-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

1.2

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

4000
Ciss

3200
Capacitance (pF)

-VGS (Volts)

3600

VDS=-30V
ID=-20A
A

2800
2400
2000
1600
1200

Coss

800

Crss

400
0

0
0

10

15

20

25 30 35 40 45
-Qg (nC)
Figure 7: Gate-Charge Characteristics

100.0

50

10ms
DC

TJ(Max)=175C, TA=25C

10

100

400

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC
RJC=2.5C/W

0
0.0001

0.001

0.01

0.1

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

-VDS (Volts)

ZJC Normalized Transient

Thermal Resistance

600

200

0.1

10

30

TJ(Max)=175C
TA=25C

1ms

RDS(ON)
limited

0.1

15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics

800
Power (W)

-ID (Amps)

100s

1.0

10

1000

10s

10.0

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

PD
Ton

Single Pulse
0.01
0.00001

0.0001

0.001

0.01

0.1

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

10

100

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70

L ID
tA =
BV V DD

25

60
Power Dissipation (W)

-ID(A), Peak Avalanche Current

30

20

15

TA=25C

50
40
30
20
10
0

10
0.00001

0.0001

0.001

25

30

60

25

50

20

40

Power (W)

Current rating -ID(A)

75

100

125

150

175

TCASE (C)
Figure 13: Power De-rating (Note B)

Time in avalanche, tA (s)

Figure 12: Single Pulse Avalanche capability

15
10

TA=25C

30
20
10

5
0
0

25

50

75

100

125

150

0
0.001

175

TCASE (C)
Figure 14: Current De-rating (Note B)

10
ZJA Normalized Transient
Thermal Resistance

50

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=50C/W

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1
PD

0.01
Single Pulse
0.001
0.00001

0.0001

0.001

Ton

0.01

0.1

10

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

100

1000